Magnetization reversal and spin accumulation in nonmagnetic metals by spin injection from lateral Co/Cu,Co/Al heterojunctions

We have fabricated ferromagnetic/nonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. To understand the effect of spin accumulation in more detail, the switching behavior of the ferromagnetic wires was studied by means of magnetoresistance (MR) measurements and Monte Carlo simulations (MC). The polycrystalline heterojunctions were prepared by high-resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal were evaporated on top of each other in a single-evaporation step to achieve an interface between the two metals of high quality. To verify the quality of the interface, we measured the spin accumulation effect in nonmagnetic copper (Cu) and aluminum (Al) and determined the spin polarization of the current at the interface between the ferromagnetic and nonmagnetic metals.     

Aluminum thickness dependence of resistance change in spin tunneling junctions Co/Al-oxide/Co

The oxidation states of Al-oxide layer and the leakage current density in coercive differential spin tunneling junctions Co/Al-oxide/Co have been investigated in order to clear the mechanism of the increasing resistance change. X-ray photoelectron spectroscopy analysis shows that the resistance change increases with decreasing unoxidized Al, which can be qualitatively explained by using first-principle band calculation based on linear-muffin-tin-orbital atomic-sphere-approximation method. The resistance change decreases with increasing leakage current density, which originates from Schottky effect. Reduction of unoxidized Al and leakage current density originating from Schottky effect is required to obtain the large resistance change in spin tunneling junctions.     

Apparent spin polarization decay in Cu-dusted Co/Al2O3/Co tunnel junctions

Co/Al2O3/Co magnetic tunnel junctions with an interfacial Cu layer have been investigated with in situ growth characterization and ex situ magnetotransport measurements. Cu interlayers grown on Co give an approximately exponential decay of the tunneling magnetoresistance with xi approximately 0.26 nm while those grown on Al2O3 have a decay length of 0.70 nm. The difference in decay lengths can be explained by different growth morphologies, and in this way clarifies a present disagreement in the literature. For monolayer coverage of Cu, we show that the tunneling spin polarization is suppressed by at least a factor of 2 compared to Co and beyond approximately 5 ML it becomes vanishingly small.     

Magnetic behaviour investigation on symmetric spin valves of Co／Cu／NiFe and NiFe／Cu／Co

In this paper,we have obtained and investigated the magnetic behaviours of the ferromagnetic layer in the symmetric spin valves of Co/Cu/NiFe and NiFe/Cu/Co by measuring with a vibrating sample magnetometer and analysing in terms of the multi-domain Ising models.It has been found that some magnetic layer can have quite different magnetic behaviours in different structures of spin valves,depending on the properties of the under-layer.In our investigation,we have found that the magnetic behaviour of a Co layer depends mainly on the magnetization of the under-layer,whereas this is not the case for the NiFe layer.     

Stability of the magnetoresistance for NiO-containing Co/Cu/Co spin valves naturally placed in air

The Co/Cu/Co spin valves with an additional NiO layer at the top (TSV) and under the bottom (BSV) were set in air at room temperature for about four years. Effects of time on the stability, the magnetoresistance (MR), and microstructures were investigated. Results show that the MR of TSV is more stable than that of BSV. The MR of BSV decreases 12.5% in the first 1000 days, while it increases 4% after another 360 days, while the MR of TSV keeps almost unchanged within the range of measurement error. Different time-dependent behavior of the MR value for BSV and TSV was ascribed to the different contribution of the roughness at NiO/Co and Co/Cu interfaces. PACS 68.60.Dv; 61.10.Eg; 68.35.Ct; 73.43.Qt; 75.25.+z     

Current-perpendicular-to-plane magnetoresistance in Co/Gd multilayers with twisted spin structure

Current-perpendicular-to-plane magnetoresistance was measured for ferrimagnetic Co/Gd multilayers which have twisted spin structure accompanied with spin-flop transition. The influence of twisted spin structure on the electronic transport was exclusively obtained, eliminating the effect of anisotropic magnetoresistance. MR curves showed a downturn around the spin-flop field, suggesting that the formation of twisted spin structure leads to a negative resistance change.     

The spin cut-off factor for60Co

Nine experimental isomeric cross-section ratios for the reactions⁵⁹Co(n, γ)⁶⁰Co,⁶⁰Ni(n,p)⁶⁰Co, and⁶³Cu(n,α)⁶⁰Co are analysed in terms of statistical theory by means of the method ofHuizenga andVandenbosch. Theγ-cascades are treated by a new model which was recently published. The results confirm the energy dependence of the spin cut-off factor for⁶⁰Coσ～U^1/4 which should not be neglected. As a mean value (σ=4.3±0.3 is obtained forU=B _n =7.5 MeV in good agreement with a nuclear moment of inertia for a rigid sphere.     

Competition between domain walls and the reverse magnetization in the magnetic relaxation of a Pt/Co/Ir/Co/Pt spin switcher

A multilayer Pt/Co/Ir/Co/Pt/GaAs heterostructures demonstrates a long term (to several hours) magnetic relaxation between two stable states of the magnetization of the system. The magnetization reversal of the heterostructure layers occurs both due to the formation of nuclei of the reverse magnetization domains and as a result of their further growth by means of motion of domain walls. The competition between two these processes provides a nonexponential character of the magnetic relaxation. At 300 K, the contributions of these processes to the relaxation are commensurable, while, at temperatures lower than 200 K, the contribution of the nucleation is suppressed and the magnetic relaxation occurs as a result of motion of the domain walls.     

Thermal stability of spin valve sensors using artificial Co/Ir based ferrimagnets

Hard-soft spin valve structures have been grown by molecular beam epitaxy on MgO(0 0 1) substrates. The hard magnetic layer consists of an artificial Co/Ir/Co ferrimagnet system (AFi), while a Fe/Co bilayer from the buffer has been used as a soft detection layer. The Fe layer has been grown at 600°C giving rise to a monocrystalline layer with a BCC structure. Consequently, this layer presents a hard and a easy magnetization axis, respectively, along the BCC [1 1 0] and the [1 0 0] directions. The AFi system presents dramatic differences after successive annealing steps up to 350°C. An increase of the GMR from 3% to 3.5% is observed after annealing at 250°C while the coercive field of the AFi and the GMR plateau are strongly reduced. After further annealing at higher temperature the GMR drops down accompanied with a strong decrease in the antiparallel alignment amount in the AFi system. Rutherford back scattering measurements have been performed to investigate the changes in the interface morphology and to correlate it to the magneto-transport properties.     

Negative spin polarization and large tunneling magnetoresistance in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions

We perform an ab initio study of spin-polarized tunneling in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes. We predict a large tunneling magnetoresistance in these junctions, originating from a mismatch in the majority- and minority-spin bands both in bulk bcc Co and at the Co/SrTiO(3)/Co interface. The intricate complex band structure of SrTiO(3) enables efficient tunneling of the minority d electrons which causes the spin polarization of the Co/SrTiO(3)/Co interface to be negative in agreement with experimental data. Our results indicate that epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes are a viable alternative for device applications.     

Magnetic anisotropy and spin reorientation in Co/Pt multilayers: Influence of preparation

The magnetic properties of Co/Pt multilayers grown by ion beam and DC magnetron sputtering techniques are compared. For Pt/Co/Pt films the spin reorientation as a function of Co thickness is investigated in second-order uniaxial anisotropy approximation. The influence of the growth technique on the interface and volume contribution to the first-order anisotropy is investigated. The correlations between structure and magnetic properties are discussed.     

Spiral spin order of self-assembled Co nanodisk arrays

Spin order in hexagonal close packed cobalt nanodisk rows is quantitatively determined by off-axis electron holography. Periodic variation in the density of the local magnetic flux shows features of a spiral spin arrangement along the row axis, resulting from a tilted magnetic moment of nanoparticles with respect to the nanodisk axis.     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

Evidence for an anisotropy-induced non-collinear spin state in exchange-coupled Co/Cu(001)

The magnetization behaviour of a Co/Cu/Co(001) sandwich has been studied by magneto-optical Kerr effect measurements. The sample was grown by molecular beam epitaxy onto a sapphire (1 .2) substrate with a Cu/Cr/Nb(001) buffer system. The copper layer had the form of a wedge with the thickness range chosen to be around the second region of antiferromagnetic exchange coupling. The hysteresis loops in the regime of weak antiferromagnetic coupling show characteristic steps, which can be explained by an anisotropy-induced non-collinear spin state. Indication for a similar behaviour is also found in the regime of strong antiferromagnetic coupling. This behaviour is explained by taking into account the competition between anisotropy, interlayer exchange coupling and external field energy. The nature of this metastable non-collinear magnetization state is in marked contrast to the biquadratic (90°) exchange coupling which was discovered in Fe/Cr(001).     

Magnetization and spin echo studies in compositionally modulated CoNb and Co films

The ⁵⁹Co spin echo signal frequency of a compositionally modulated CoNb sample with Co sublayer as thin as 14 Å is the same as that of a Co film but the low frequency tail becomes more pronounced as this thickness decreases. Increasing Nb layer thickness reduces the signal intensity.     

Electronic conductivity in 1D Co spin chain single crystal

We have measured the transport and magnetic properties of the model spin chain single crystal Ca₃Co₂O₆ in high pulsed fields. A crossover between 1D and 3D transport is observed, with the opening of a Coulomb gap below the order temperature of the individual chains. The samples show changes in the variable range hopping transport dimensionality and gap; the magnetic field suppresses the gap, inducing a significant reduction of the resistance, while dimensionality seems governed by temperature. At fields associated with the levels of magnetization of the frustrated triangular lattice formed by the Co lines, and below the critical magnetic temperature, a further increase of the conductivity is observed. This effect is associated with planar magnetic states perpendicular to the lines.