Ferromagnetism on a paramagnetic host background in cobalt-doped Bi_2Se_3 topological insulator

Cobalt-doped Bi2Se3topological insulators have been grown though melt-grown reaction. The Bi2Se3matrix is diamagnetic and doped sample is a superposition of ferromagnetism(FM) and paramagnetism(PM) behavior at low temperature. The values of MSmol, Hc, and Mr increase as the Co concentration increases. Two possible explanations have been proposed for the origin of ferromagnetism in Co-doped Bi2Se3. One is the magnetic ordering from nanoclusters of Co–Se compound in the crystals, and the other is Ruderman–Kittel–Kasuya–Yosida(RKKY) interaction between magnetic impurities.     

Femtosecond Tm-Ho co-doped fiber laser using a bulk-structured Bi_2Se_3 topological insulator

We experimentally demonstrate a femtosecond mode-locked thulium-holmium(Tm-Ho) co-doped fiber laser incorporating a saturable absorber(SA) based on a bulk-structured bismuth selenide(Bi_2Se_3) topological insulator(TI). The SA was prepared by depositing a mechanically exfoliated Bi_2Se_3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi_2Se_3 TI-based SA, bulk-structured Bi_2Se_3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~ 28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~ 853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi_2Se_3 is a superb base material for mid-infrared passive mode-locking even under oxidation.     

Electronic states and spin-filter effect in three-dimensional topological insulator Bi_2Se_3 nanoribbons

We study the electronic band structure, density distribution, and transport of a Bi_2Se_3 nanoribbon. We find that the density distribution of the surface states is dependent on not only the shape and size of the transverse cross section of the nanoribbon, but also the energy of the electron. We demonstrate that a transverse electric field can eliminate the coupling between surface states on the walls of the nanoribbon, remove the gap of the surface states, and restore the quantum spin Hall effects. In addition, we study the spin-dependent transport property of the surface states transmitting from top and bottom surfaces(x-y plane) to the side surfaces(z-x plane) of a Bi_2Se_3 nanoribbon. We find that transverse electric fields can open two surface channels for spin-up and-down Dirac electrons, and then switch off one channel for the spin-up Dirac electron. Our results may provide a simple way for the design of a spin filter based on topological insulator nanostructures.     

Transport properties of doped Bi_2Se_3 and Bi_2Te_3 topological insulators and heterostructures

In this review article, the recent experimental and theoretical research progress in Bi_2Se_3-and Bi_2Te_3-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi_2Se_3-and Bi_2Te_3-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors.     

拓扑绝缘体薄膜生长与栅电压调控输运特性研究

文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备,并介绍了文章作者利用分子束外延方法,在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状,以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.     

拓扑绝缘体薄膜生长与栅电压调控输运特性研究

文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备,并介绍了文章作者利用分子束外延方法,在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状,以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.     

Acoustic plasmonics of Au grating/Bi_2Se_3 thin film/sapphire hybrid structures

The surface plasmon polaritons of the topological insulator Bi_2Se_3 can be excited by using etched grating or grave structures to compensate the wave vector mismatch of the incident photon and plasmon. Here, we demonstrate novel gold grating/Bi_2Se_3 thin film/sapphire hybrid structures, which allow the excitation of surface plasmon polaritons propagating through nondestructive Bi_2Se_3 thin film with the help of gold diffractive gratings. Utilizing periodic Au surface structures,the momentum can be matched and the normal-incidence infrared reflectance spectra exhibit pronounced dips. When the width of the gold grating W(with a periodicity 2 W) increases from 400 nm to 1500 nm, the resonant frequencies are tuned from about 7000 cm~(-1) to 2500 cm~(-1). In contrast to the expected ■ dispersion for both massive and massless fermions,where q ～π/W is the wave vector, we observe a sound-like linear dispersion even at room temperature. This surface plasmon polaritons with linear dispersion are attributed to the unique noninvasive fabrication method and high mobility of topological surface electrons. This novel structure provides a promising application of Dirac plasmonics.     

Synthesis and magnetotransport properties of Bi_2Se_3 nanowires

Bi_2Se_3, as a three-dimensional topological insulator, has attracted worldwide attention for its unique surface states which are protected by time-reversal symmetry. Here we report the synthesis and characterization of high-quality singlecrystalline Bi_2Se_3 nanowires. Bi_2Se_3 nanowires were synthesized by chemical vapor deposition(CVD) method via goldcatalyzed vapor-liquid-solid(VLS) mechanism. The structure and morphology were characterized by scanning electron microscopy(SEM), transmission electron microscopy(TEM), x-ray photoelectron spectroscopy(XPS), and Raman spectroscopy. In magnetotransport measurements, the Aharonov–Bohm(AB) effect was observed in a nanowire-based nanodevice, suggesting the existence of surface states in Bi_2Se_3 nanowires.     

Soliton mode-locked fiber laser with high-quality MBE-grown Bi_2Se_3 film

In this work, a soliton mode-locked erbium-doped fiber laser(EDFL) with a high-quality molecular beam epitaxy(MBE)-grown topological insulator(TI) Bi_2Se_3 saturable absorber(SA) is reported. To fabricate the SA device, a 16-layer Bi_2Se_3 film was grown successfully on a 100 μm thick SiO_2 substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm~2.After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength, pulse energy,pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 p J, 1.08 ps, and 60d Bm, respectively. These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.     

High pressure transport properties of the topological insulator Bi2Se3

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 toward increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance Δρ(xx) that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.     

Ultrashort optical pulse in a thin film of a topological insulator

We consider the propagation of ultrashort optical pulses in a thin film of a topological insulator within the framework of an effective long-wave Hamiltonian for low-temperature media. The electromagnetic field is taken as classical Maxwellian. We reveal the dependence on the maximum amplitude of ultrashort optical pulses.     

Molecular beam epitaxy of superconducting PdTe_2 films on topological insulator Bi_2Te_3

Majorana fermions have been observed in topological insulator/s-wave superconductor heterostructures. To manipulate Majorana fermions, superconducting materials should be deposited on the surfaces of topological insulators. In this study, highquality superconducting PdTe_2 films are deposited on the topological insulator Bi_2Te_3 surface using molecular beam epitaxy. The surface topography and electronic properties of PdTe_2/Bi_2Te_3 heterostructures are investigated via in situ scanning tunneling microscopy/spectroscopy. Under Te-rich conditions, the Pd atoms presumably form PdTe_2 film on Bi_2Te_3 surface rather than diffuse into Bi_2Te_3. The superconductivity of the PdTe_2/Bi_2Te_3 heterostructure is detected at a transition temperature of ～1.4 K using the two-coil mutual inductance technique. This study proposes a method for fabricating superconducting materials on topological insulator surfaces at low doping levels, paving ways for designing nanodevices that can manipulate Majorana fermions.     

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.     

Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks

Multi-channel Bi₂Se₃ thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi₂Se₃ grew on amorphous Al₂O₃ even after multiple stacking. While the surface morphology degraded for the upper layers, each layer was electrically similar. The electrical transport measurements showed that the weak anti-localization effect was quantitatively enhanced upon increasing the number of Bi₂Se₃ channels. Our results provide a promising approach to exploit diverse combinations of layered topological insulator films vertically stacked with amorphous insulator films.     

Effects of post-annealing on crystalline and transport properties of Bi_2Te_3 thin films

A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi_2 Te_3 films with the carrier density down to 4.0 × 10~(13) cm~(-2). In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi_2 Te_3 thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi_2 Te_3 thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length(～ 228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi_2 Te_3 thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.     

Carrier transport in Bi2Se3 topological insulator slab

Electron transport in Bi₂Se₃ topological insulator slabs is investigated in the thermal activation regime (>50 K) both in the absence (ballistic) and presence of weak and strong acoustic phonon scattering using the non-equilibrium Green function approach. Resistance of the slab is simulated as a function of temperature for a range of slab thicknesses and effective doping in order to gain a handle on how various factors interact and compete to determine the overall resistance of the slab. If the Bi₂Se₃ slab is biased at the Dirac point, resistance is found to display an insulating trend even for strong electron–phonon coupling strength. However, when the Fermi-level lies close to the bulk conduction band (heavy electron doping), phonon scattering can dominate and result in a metallic behavior, although the insulating trend is retained in the limit of ballistic transport. Depending on values of the operating parameters, the temperature dependence of the slab is found to exhibit a remarkably complex behavior, which ranges from insulating to metallic, and includes cases where the resistance exhibits a local maximum, much like the contradictory behaviors seen experimentally in various experiments.     

Control of spin waves in a thin film ferromagnetic insulator through interfacial spin scattering

Control of spin waves in a ferrite thin film via interfacial spin scattering was demonstrated. The experiments used a 4.6 μm-thick yttrium iron garnet (YIG) film strip with a 20-nm thick Pt capping layer. A dc current pulse was applied to the Pt layer and produced a spin current across the Pt thickness. As the spin current scatters off the YIG surface, it can either amplify or attenuate spin-wave pulses that travel in the YIG strip, depending on the current or field configuration. The spin scattering also affects the saturation behavior of high-power spin waves.     

Electric and thermal transport properties of topological insulator candidate LiMgBi

We report the transport properties of a topological insulator candidate, LiMgBi. The electric resistivity of the title compound exhibits a metal-to-semiconductor-like transition at around 160 K and tends to saturation below 50 K. At low temperatures, the magnetoresistance is up to ~260% at 9 T and a clear weak antilocalization effect is observed in the low magnetic-field region. The Hall measurement reveals that LiMgBi is a multiband system, where hole-type carriers (n_h~10¹⁸ cm^-3) play a major role in the transport process. Remarkably, LiMgBi possess a large Seebeck coefficient (~440 μV/K) and a moderate thermal conductivity at room temperature, which indicate that LiMgBi is a promising candidate in thermoelectric applications.     

Confined states and spin polarization on a topological insulator thin film modulated by an electric potential

We study the electronic structure and spin polarization of the surface states of a three-dimensional topological insulator thin film modulated by an electrical potential well. By routinely solving the low-energy surface Dirac equation for the system, we demonstrate that confined surface states exist, in which the electron density is almost localized inside the well and exponentially decayed outside in real space, and that their subband dispersions are quasilinear with respect to the propagating wavevector. Interestingly, the top and bottom surface confined states with the same density distribution have opposite spin polarizations due to the hybridization between the two surfaces. Along with the mathematical analysis, we provide an intuitive, topological understanding of the effect.