Inclusions in large diamond single crystals at different temperatures of synthesis

The inclusions in large diamond single crystals have effects on its ultimate performance, which restricts its industrial applications to a great extent. Therefore, it is necessary to study the inclusions systematically. In this paper, large diamond single crystals with different content values of inclusions are synthesized along the(100) surface by the temperature gradient method(TGM) under 5.6 GPa at different temperatures. With the synthetic temperature changing from 1200?C to 1270?C,the shapes of diamonds change from plate to low tower, to high tower, even to steeple. From the microscopic photographs of the diamond samples, it can be observed that with the shapes of the samples changing at different temperatures, the content values of inclusions in diamonds become zero, a little, much and most, correspondingly. Consequently, with the temperature growing from low to high, the content values of inclusions in crystals increase. The origin of inclusions is explained by the difference in growth rate between diamond crystal and its surface. The content values of inclusions in diamond samples are quantitatively calculated by testing the densities of diamond samples. And the composition and inclusion content are analyzed by energy dispersive spectroscopy(EDS) and x-ray diffraction(XRD). From contrasting scanning electron microscopy(SEM) photographs, it can be found that the more the inclusions in diamond, the more imperfect the diamond surface is.     

Solvothermal synthesis of nanocrystalline FeS_2

Iron disulfide pyrite (FeS2) has attracted considerable attention as a potential can- didate for photovoltaic and photo-electrochemical applications. The relatively large ab- sorption coefficient (α ≥5×105 cm?1 for λ≤700 nm), the suitable bandgap (E g = 0.95 eV) and the composition of abundant, cheap and non-toxic elements are reasons for the interest in pyrite as an absorber material for thin-film solar cells[1—3]. Various methods, including electrodeposition[4], chemical vapor transpo…     

Hydrothermal synthesis of FeS2 for lithium batteries

Nanocrystalline FeS₂ cathode material of lithium cell was synthesized from cheap materials of FeSO₄, Na₂S₂O₃, and sulfur by a hydrothermal process. The scanning electron microscopy analysis showed the obtained material was nano-sized, about 500 nm. The X-ray powder diffraction analysis showed that the synthetic FeS₂ material had two phases of the crystalline structure, pyrite and marcasite. The phase of marcasite seems to have no negative effect on the electrochemical performance of the material. The synthetic FeS₂ showed a significant improvement of electrochemical performance for Li/FeS₂ cells.     

人工合成金刚石研究进展

1796年英国科学家S.Tennant的精确燃烧实验,首次揭示金刚石是由纯碳构成的宝石,从此人类开始了漫长的人工合成金刚石的探索.金刚石通常只能在极端条件下形成,因此,合成技术的突破是人类合成水平提高的一个重要标志,文章对这一领域一些重要工作做了简单回顾,也讨论了作者在合成金刚石方面的工作.我们在440℃的低温条件下,用碱金属（Li,Na,K）还原超临界CO2,得到透明、大尺寸的金刚石晶体,首次实现了金刚石燃烧实验的逆过程,即把低能、直线型CO2分子变成了碳-碳四面体连接的金刚石,开辟了人工合成金刚石的新途径.也讨论了它与天然金刚石起源之间的可能联系.     

人工合成金刚石研究进展

1796年英国科学家S．Tennant的精确燃烧实验，首次揭示金刚石是由纯碳构成的宝石，从此人类开始了漫长的人工合成金刚石的探索．金刚石通常只能在极端条件下形成，因此，合成技术的突破是人类合成水平提高的一个重要标志，文章对这一领域一些重要工作做了简单回顾，也讨论了作者在合成金刚石方面的工作．我们在440℃的低温条件下，用碱金属(Li，Na，K)还原超临界CO2，得到透明、大尺寸的金刚石晶体，首次实现了金刚石燃烧实验的逆过程，即把低能、直线型CO2分子变成了碳-碳四面体连接的金刚石，开辟了人工合成金刚石的新途径．也讨论了它与天然金刚石起源之间的可能联系．     

Effects of additive NaN_3 on the HPHT synthesis of large single crystal diamond grown by TGM

In this paper,large single crystal diamond with perfect shape and high nitrogen concentration approximately 1671-1742 ppm was successfully synthesized by temperature gradient method (TGM) under high pressure and high temperature (HPHT).The HPHT synthesis conditions were about 5.5 GPa and 1500-1550 K.Sodium azide (NaN3) with different amount was added as the source of nitrogen into the synthesis system of high pure graphite and kovar alloy.The effects of additive NaN3 on crystal growth habit were investigated in detail.The crystal morphology,nitrogen concentration and existing form in synthetic diamond were characterized by means of scanning electron microscope (SEM) and infrared (IR) absorption spectra,respectively.The results show that with an increase of the content of NaN3 added in the synthesis system,the region of synthesis temperature for high-quality diamond becomes narrow,and crystal growth rate is restricted,whereas the nitrogen concentration in synthetic diamond increases.Nitrogen exists in diamond mainly in dispersed form (C-centers) and partially aggregated form (A-centers).The defects occur more frequently on crystal surface when excessive NaN3 is added in the synthesis system.     

Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.     

p-Type doping of diamond films with a novel organoboron source

p-Type polycrystalline diamond films were prepared by hot-filament CVD method using a liquid cyclic organic borinate ester as the doping source. The obtained films were identified as diamond films by means of SEM and Raman spectroscopy. The resistivity of the doped films can be adjusted by changing the temperature of the boron source.     

掺硅类金刚石膜的制备与力学性能研究

用脉冲电弧离子镀技术,通过调整掺硅石墨靶和纯石墨靶的数量,制备了一系列不同硅含量的类金刚石薄膜样品.研究发现：当硅含量达6.7at.%时,类金刚石薄膜的应力从4.5GPa降低到3.1GPa,薄膜的硬度还保持在3600Hv,和没有掺杂的类金刚石薄膜的硬度相比,基本保持不变;当硅含量小于6.7at.％时薄膜的摩擦系数相对于未掺杂的类金刚石薄膜也保持不变,为0.15.当薄膜中硅含量继续增加时,薄膜中C—Si键的含量增多,导致薄膜硬度和应力都有较大幅度地减小、摩擦系数增大、磨损性能也变差了. 关键词： 类金刚石膜 掺硅 应力 硬度     

Substitutional doping of Cu in diamond: Mott physics with p orbitals

Discovery of superconductivity in the impurity band formed by heavy doping of boron into diamond (C:B) as well as doping of boron into silicon (Si:B) has provided a rout for the possibility of new families of superconducting materials. Motivated by the special role played by copper atoms in high temperature superconducting materials where essentially Cu d orbitals are responsible for a variety of correlation induced phases, in this paper we investigate the effect of substitutional doping of Cu into diamond. Our extensive first principle calculations based on density functional theory which are averaged over various geometries indicate the formation of a mid-gap band, which mainly arises from the t _{2 g} and 4p states of Cu. For impurity concentrations of more than ~1%, the effect of 2p bands of neighboring carbon atoms can be ignored. Based on our detailed analysis, we suggest a two band model for the mid-gap states consisting of a quarter-filled hole like t _{2 g} band, and a half-filled band of 4p states. Increasing the concentration of the Cu impurity beyond ~5%, completely closes the spectral gap of the host diamond.     

Synthesis and doping of microcolumn diamond photoemitters with silicon-vacancy color centers

Bulletin of the Lebedev Physics Institute - The method of epitaxial growth of localized photoluminescence sources in the form of the ordered microcolumn diamond structures with silicon-vacancy...     

Effect of doping on positron annihilation in GaAs

The effect of doping on positron annihilation was studied in GaAs single crystals. The positron lifetimes in Si- and Ge-doped crystals (n-type) are similar to that in an instrinsic crystal. On the other hand, the lifetimes in Zn-, Cd-, Cr- and Mn-doped crystals (p-type) are shorter than that in an intrinsic one. The difference is small but significant.     

Effect of Li doping on the critical temperature and glass formation in the Bi-Sr-Ca-Cu-O system

A study has been made of the glass-forming ability, structure, and superconducting properties of Bi_2.2Sr_1.8Ca_1.05Cu_2.15Li_xO_y and Bi_2.2Sr_1.8Ca_1.05Cu_2.15−x Li_xO_y (x=0;0.3;0.5;0.7). The compounds were melted by rf at T=1300–1500 °C. Rapid quenching produces glassy alloys whose glass-forming ability is the highest when lithium is substituted for copper. Glass annealing at 700–800 °C results in the formation of the HTSC phase 2212 with a critical temperature of up to 91 K. In lithium-doped samples the HTSC phase forms at lower temperatures and shorter anneals and it depends on the cooling rate following the anneal. The composition and properties of the 2212 phase depend nonmonotonically on the anneal time. The lattice parameter C of the 2212 phase increases with increasing lithium content. Fiz. Tverd. Tela (St. Petersburg) 41, 18–21 (January 1999)     

Delta‐layer doping profile in diamond providing high carrier mobility

We show that the nano‐scale delta‐layer doping profile in diamond can significantly influence both the carrier mobility and two‐dimensional conductivity. We numerically considered and compared a simple boron doping profile with one maximum at the delta‐layer center and a more complicated profile with two maxima inside the delta layer and a minimum at its center. As a result we concluded that in the last case the hole mobility and the two‐dimensional conductivity are higher by more than 3 times and 60% respectively than in the first case. The physical reason for the improvement is that for the two‐maxima doping profile the peaks of the carrier and ionized dopant densities are spatially separated, whereas for the simple one‐maximum doping profile they coincide. So, the carrier scattering on ionized dopants for the two‐maxima profile significantly decreases in comparison with the simple one‐maximum profile. The proposed two‐maxima delta‐layer doping profile can be used for the creation of diamond‐based micro‐ and nanoelectronics devices, e.g. high‐frequency field effect transistors.

     

To the synthesis of polycrystalline diamond

Abstract

The sintering system “Diamond-Graphite-Cobalt” is investigated by means of a High Pressure - High Temperature - Belt - Apparatus. Described are the sintering conditions used and some of the properties of the compacts obtained. Good sintering structures and hard PCD (up to 50 GPa) were obtained at 7,5 GPa and 1500°C.     

UV detectors based on epitaxial diamond films grown on single-crystal diamond substrates by vapor-phase synthesis

The prospects for use of CVD-technology for epitaxial growth of single-crystal diamond films of instrumental quality in UHF plasma for the production of optoelectronic devices are discussed. A technology for processing diamond single crystals that provides a perfect surface crystal structure with roughness less than 0.5 nm was developed. It was demonstrated that selective UV detectors based on synthetic single-crystal diamond substrates coated with single-crystal films can be produced. A criterion for selecting clean and structurally perfect single crystals of synthetic diamond was developed for the epitaxial growth technology.     

Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond(NCD) films produced by only adding 0.24% N2 into 4% CH4 /H2 plasma,as compared to the high quality transparent microcrystalline diamond(MCD) films,grown using the same growth parameters except for nitrogen.These experimental results clearly evidence that defect formation and impurity incorporation(for example,N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CH x(x=1,2,3) growth species for adsorption sites.     

Effect of barium doping on the physical properties of zinc oxide nanoparticles elaborated via sonochemical synthesis method

The aim of this work is to study the effect of barium (Ba) doping on the optical, morphological and structural properties of ZnO nanoparticles. Undoped and Ba-doped ZnO have been successfully synthesized via sonochemical method using zinc nitrate, hexamethylenetetramine (HMT) and barium chloride as starting materials. The structural characterization by XRD and FTIR shows that ZnO nanoparticles are polycrystalline with a standard hexagonal ZnO wurtzite crystal structure. Decrease in lattice parameters from diffraction data shows the presence of Ba²⁺ in the ZnO crystal lattice. The morphology of the ZnO nanoparticles has been determined by scanning electron microscopy (SEM). Incorporation of Ba was confirmed from the elemental analysis using EDX. Optical analysis depicted that all samples exhibit an average optical transparency over 80%, in the visible range. Room-temperature photoluminescence (PL) spectra detected a strong ultraviolet emission at 330 nm and two weak emission bands were observed near 417 and 560 nm. Raman spectroscopy analysis of Ba-doped samples reveals the successful doping of Ba ions in the host ZnO.     

Influence of the nucleation behaviour on the synthesis of diamond

Abstract

Using a solid state nucleation model the influence of different carbon types on the nucleation number of diamond has been studied, keeping constant the synthesis parameters p, T, t. The carbon types used have been investigated concerning their mechanical, electrical and chemical properties; the graphite content and the lattice perfection of the graphite are also determined. As a experimental result the nucleation number shows a significant dependence on the carbon type used, particularly on the amount of crystalline graphite.

The results show the possibility to influence certain steps of the diamond synthesis process.     

氮对金刚石缺陷发光的影响

利用低温显微荧光光谱研究了IIa型、Ib型、Ia型金刚石的缺陷发光性质. 研究发现, 随着氮含量增加, 间隙原子及空位逐渐被氮原子所束缚, 从而使得GR1中心、533.5 nm及580 nm中心等本征缺陷发光减弱, 而氮-空位复合缺陷(NV中心)及523.7 nm中心等氮相关缺陷发光增强. 高温退火后, 间隙原子与空位可以自由移动, IIa型金刚石中出现了NV⁰中心, Ib型金刚石中只剩下了NV中心, Ia型金刚石中氮原子之间发生团聚, 出现了H3中心及N3中心. 另外, 氮作为施主原子, 有利于负电荷缺陷的形成, 如3H 中心、NV^- 中心.