Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping

Ba0.6Sr0.4 TiO3 thin films doped with K were deposited on Pt/Ti/SiO2 /Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Ba0.6Sr0.4 TiO 3 thin films have been studied in detail. The K content in Ba0.6Sr0.4TiO3 thin films has a strong influence on the material’s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Ba0.6Sr0.4 TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4 TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.     

Epitaxial growth and in-plane dielectric properties of orthorhombic HoMnO3 films

Orthorhombic HoMnO3(HMO) thin films were grown epitaxially on LaAlO3(001) substrates by using pulsed laser deposition technique. The films showed perfect orthorhombic crystallization and were well-aligned with the substrates. The in-plane dielectric constant and loss of HMO films were measured as functions of temperature(80–300 K) and frequency(120 Hz–100 kHz) by using coplanar interdigital electrodes. Two thermally activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency increased. The in-plane dielectric properties of epitaxial orthorhombic HMO films were considered as universal dielectric response behavior, and the dipolar effects and the hopping conductivity induced by the charge carriers were used to explain the results.     

Improved multiferroic properties of La-doped 0.6BiFeO3—0.4SrTiO3 solid solution ceramics

The 0.6（Bi1-xLax）FeO 3-0.4SrTiO 3（x = 0,0.1） multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization（Pr） and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6（Bi0.9La0.1）FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

Improved multiferroic properties of La-doped 0.6BiFeO₃-0.4SrTiO₃ solid solution ceramics

The 0.6(Bi1-xLax)FeO 3-0.4SrTiO 3(x = 0,0.1) multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization(Pr) and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6(Bi0.9La0.1)FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

Dielectric behavior of Cu–Zn ferrites with Si additive

Since ferrites are highly sensitive to the additives present in or added to them, extensive work, to improve the properties of basic ferrites, has been carried out on these aspects. The present paper reports the effects of composition, frequency,and temperature on the dielectric behavior of a series of CuxZn1-xFe2O4 ferrite samples prepared by the usual ceramic technique. In order to improve the properties of the samples, low cost Fe2O3having 0.5 wt.% Si as an additive is selected to introduce into the system. The dielectric constant increases by increasing the Cu content, as the electron exchange of Cu2+= Cu+is responsible for the conduction and the polarization. However, the addition of Si could decrease the dielectric constant as it suppresses the ceramic grain growth and promotes the quality factor at higher frequencies.Dielectric constant ε and loss tangent tan δ of the mixed Cu–Zn ferrite decrease with increasing frequency, attributed to the Maxwell–Wagner polarization, which increases as the temperature increases.     

Temperature-dependent dielectric properties of Au/Si_3N_4/n-Si (metal insulator semiconductor) structures

The dielectric properties of Au/Si3N4/n-Si(MIS)structures are studied using the admittance measurements(C–V and G/ω–V)each as a function of temperature in a range from 80 K to 400 K for two frequencies(100 kHz and 1 MHz).Experimental results show that both the dielectric constant(ε)and the dielectric loss(ε)increase with temperature increasing and decrease with frequency increasing.The measurements also show that the ac conductivity(σac)increases with temperature and frequency increasing.The lnσacversus 1000/T plot shows two linear regions with different slopes which correspond to low(120 K–240 K)and high(280 K–400 K)temperature ranges for the two frequencies.It is found that activation energy increases with frequency and temperature increasing.     

Dielectric properties of electrospun titanium compound/polymer composite nanofibres

Poly(vinylpyrrolidone)/tetrabutyl titanate (PVP/ [CH3(CH2)3O]4Ti) composite nanofibres are prepared by elec- trospinning. After calcining parts of composite nanofibres in air at 700 C, petal-like TiO2 nanostructures are obtained. The characterizations of composite nanofibres and TiO2 nanostructures are carried out by a scanning electron micro- scope, an x-ray diffractometer, and an infrared spectrometer. Electrospun nanofibres are pressed into pellets under different pressures in order to explore their dielectric properties. It is found that the dielectric constants decrease with frequency increasing. The dielectric constant of the composite nanofibre pellet increases whereas its dielectric loss tangent decreases due to the doped titanium ions compared with those of pure PVP nanofibre pellets. In addition, it is observed that the dielectric constant of the composite nanofibre pellet decreases with the increase of the pressure applied in pelletization.     

Dynamic mechanical analysis of single walled carbon nanotubes/polymethyl methacrylate nanocomposite films

Dynamic mechanical properties of nanocomposite films with different ratios of single walled carbon nanotubes/polymethyl methacrylate(SWCNTs/PMMA) are studied. Nanocomposite films of different ratios(0, 0.5, 1.0, and2.0 weight percent(wt%)) of SWCNTs/PMMA are fabricated by using a casting technique. The morphological and structural properties of both SWCNT powder and SWCNTs/PMMA nanocomposite films are investigated by using a high resolution transmission electron microscope and x-ray diffractometer respectively. The mechanical properties including the storage modulus, loss modulus, loss factor(tan δ) and stiffness of the nanocomposite film as a function of temperature are recorded by using a dynamic mechanical analyzer at a frequency of 1 Hz. Compared with pure PMMA film, the nanocomposite films with different ratios of SWCNTs/PMMA are observed to have enhanced storage moduli, loss moduli and high stiffness, each of which is a function of temperature. The intensity of the tan δ peak for pure PMMA film is larger than those of the nanocomposite films. The glass transition temperature(T g) of SWCNTs/PMMA nanocomposite film shifts towards the higher temperature side with respect to pure PMMA film from 91.2?C to 99.5?C as the ratio of SWCNTs/PMMA increases from 0 to 2.0 wt%.     

Alternating current characterization of nano-Pt(Ⅱ)octaethylporphyrin(PtOEP) thin film as a new organic semiconductor

Alternating current(AC) conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature(303 K–473 K) and frequency(50 Hz–5 MHz).The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping(CBH) model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N(EF) are valued at different frequencies.Dielectric constant ε_1(ω,T) and dielectric loss ε_2(ω,T) are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus(M')is found to follow the Arrhenius law.     

Temperature-Dependent Dielectric Characterization of Magneto-Optical Tb_3Sc_2Al_3O_(12) Crystal Investigated by Terahertz Time-Domain Spectroscopy

Terbium scandium aluminum garnet(TSAG) crystals have been widely used in magneto-optical systems. We investigate the complex refractive index of the TSAG crystal in the terahertz frequency range using terahertz(THz) time-domain spectroscopy in the temperature range 100–300 K. It is observed that the refractive index and the absorption coefficient increase with the THz frequency. The refractive index increases with the temperature.We measure the temperature coefficient of the refractive index of the TSAG crystal in the frequency range 0.4–1.4 THz. Furthermore, the loss tangent, i.e., the ratio of experimental values of the imaginary and real part of the dielectric permittivity, is found to be almost independent of frequency. TSAG is very promising for applications in THz optoelectronics because it has a high dielectric constant, low loss, and low thermal coefficient of the dielectric constant.     

Effect of substitution group on dielectric properties of 4H-pyrano [3,2-c] quinoline derivatives thin films

The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile(Ph-HPQ) and 2-amino-4-(2-chlorophenyl)-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile(Ch-HPQ) thin films were determined in the frequency range of 0.5 k Hz–5 MHz and the temperature range of 290–443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping(CBH) mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.     

Characterization of Mn—Doped Ba1—xSrxTiO3 Thin Films Prepared by the Sol—Gel Method

Undoped and Mn-doped Ba1-xSrxTiO3(BST) thin films have been fabricated on Pt/Ti/SiO2/Si by an aqueous acetate sol-gel method.The BST stock solution can be easily mixed with an aqueous metal ion solution and is stable at room temperature.The annealing temperature of the doped and undoped films is between 650-750℃.The x-ray photoelectron spectra results show that the Mn2p3/2 valence state in the BST is the sampe as that of the original Mn(Ⅱ） dopant,The dielectric constant of the BST thin films can be increased to 800,and the loss tangent can be decreased to 0.01 due to the Mn(Ⅱ） doping.The leakage current of the BST films can also be greatly reduced.     

Electrical, dielectric and surface wetting properties of multi-walled carbon nanotubes/nylon-6 nanocomposites

This paper reports that the multi-walled carbon nanotubes(MWCNT)/nylon-6 (PA6) nanocomposites with different MWCNT loadingshave been prepared by a simple melt-compounding method. Theelectrical, dielectric, and surface wetting properties of theCNT/PA6 composites have been studied. The temperature dependence ofthe conductivity of the CNT/PA6 composite with 10.0 wt{\%} CNTloading ($\sigma _{\rm RT} \sim 10^{-4}$ S/cm) are measured, andafterwards a charge-energy-limited tunnelling model (ln $\sigma (T)\sim T^{-1/2})$ is found. With increasing CNT weight percentage from0.0 to 10.0 wt%, the dielectric constant of the CNT/PA6composites enhances and the dielectric loss tangent increases twoorders of magnitude. In addition, water contact angles of theCNT/PA6 composites increase and the composites with CNT loadinglarger than 2.0 wt%even become hydrophobic. The obtainedresults indicate that the electrical and surface properties of thecomposites have been significantly enhanced by the embedded carbonnanotubes.     

Transmission properties of frequency selective structures with air gaps

The transmission properties of compound frequency selective structures with dielectric slab and air gaps were investigated by computation and experimentation.Mechanism analyses were also carried out.Results show that the air gaps have a distinct influence on the transmission properties.Resonant frequency of the structure would increase rapidly when the air gap appears.After the gap gets larger to a specific value,generally 1/5 wavelength corresponding to the resonant frequency,the transmission properties would change periodically with the gap thickness.The change of transmission properties in one period has a close relationship with the dielectric thickness.These results provide a new method for designing a bandpass radome of large incidence angle and low loss with the concept of stealth shield radome.     

Comprehensive studies on dielectric properties of p-methoxy benzylidene p-decyl aniline with function of temperature and frequency in planar geometry: A potential nematic liquid crystal for display devices

The dielectric properties of the nematic mesophase, p-methoxy benzylidene p-decyl aniline(MBDA), measured in planar geometry with a function of frequency and temperature are investigated in detail. The complex dielectric permittivity(ε' and ε') is also studied at a bias voltage of 10 V for planar aligned sample cell of nematic mesophase. The dielectric permittivity with bias voltage attains a higher( 2 times) value than that without bias voltage at a temperature of 56℃,which is due to the fact that the linking group of nematic molecules is internally interacted with an applied bias voltage.This is supported by observing an enhanced dielectric permittivity of nematic liquid crystal(LC) in the presence of bias voltage, which can be fully explained as the increasing of the corresponding dipole moment. The dielectric relaxation behaviors of nematic LC are also demonstrated for planar aligned sample cell. The remarkable results are observed that the relaxation frequency shifts into low frequency region with the increase of the bias voltage applied to the planar aligned sample cells. The dielectric relaxation spectra are fitted by Cole–Cole nonlinear curve fitting for nematic mesophase in order to determine the dielectric strength.     

Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.     

Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si （100） substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700℃. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite （OZn）, interstitial oxygen （Oi）, interstitial zinc （Zni） and zinc vacancy （VZn^-）, which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.     

Dielectric Performance of Porous Methyl Silsesquioxane/Triacetyl-β-Cyclodextrin Thin Films

Porous methyl silsesquioxane thin films with low dielectric constant are successfully synthesized by means of the sol-gel spin-coating method. The precursor solutions are prepared by properly mixing the polymer as a matrix with different contents of triacetyl-β-cyclodextrin （TABCD） as a porogen. The chemical structure, dielectric constants, optical constants and void fraction are investigated by the ellipsometric porosimetry, Fourier transform infrared （FTIR） spectroscopy, and other methods. Influences of TABCD and methyl trimethoxysilane （MTMS） on the dielectric properties are discussed. For those samples with higher porogen loading, orientation and electronic polarizations are lower in low and high frequency regions, respectively, because of a considerably smaller number of polar molecules. The FTIR results suggest that high R value （molar ratio of H2 O to MTMS） is more advantageous for formation of cage structures and the cage/network structural ratio increases with the increasing R value.