掺碲硒化镓晶体的光学性能

采用水平区熔法生长了碲（Te）掺杂浓度（质量百分比）分别为0.05%,0.1%,0.5%,1%,2%的硒化镓（GaSe）晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明：当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E＇（2）刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E＇（2）刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E＇（2）刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E＇（2）刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。     

Investigation of symmetries of second-order nonlinear susceptibility tensor of GaSe crystals in THz domain

Following our measurements and analysis made on several GaSe crystals, we demonstrated that terahertz (THz) generation from ultrafast laser pulses can be developed into a sensitive technique for investigating symmetries of second-order nonlinear susceptibility tensor of a nonlinear crystal. Indeed, for GaSe crystals, both Kleinman's symmetry condition and spatial symmetry were violated due to the contribution of ionic displacement to nonlinear polarization and deviation of GaSe lattice from hexagonal symmetry. When the pump photon energy was increased from that below the bandgap of GaSe to that above it, the mechanism for the THz generation was switched from optical rectification to photocurrent surge.     

Tellurium and sulfur doped GaSe for mid-IR applications

Centimeter-sized Te:GaSe (??10?mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like ??-GaSe. Te:GaSe (??2?mass%) crystals were suitable for non-linear applications. The optimal Te-doping level between 0.1 and 0.5 mass% has been clearly observed in CO₂ laser SHG experiment. The CO₂ laser SHG efficiency in Te:GaSe (0.1?C0.5 mass%) is ??20?% higher than that of GaSe due to better optical quality. Phase matching conditions in Te-doped crystals have been shown to be identical with those of GaSe.     

GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects

One of the most important uses of THz spectrometry is to detect defects in molecular structure or in crystals efficiently. We applied GaP Raman THz (GRT) spectrometer to detect and evaluate defects in inorganic and organic materials. High THz-wave absorption due to high defect density of GaSe crystal lowered the efficiency of THz wave generation, when the crystal is used as nonlinear material for DFG (Difference Frequency Generation). Defects in organic molecules could be observed as changes in frequency, intensities of the absorption, and broadenings of the spectra.     

AgGaS2- and Al-doped GaSe Crystals for IR Applications

We report a systematic study of AgGaS₂- and Al-doped GaSe crystals in comparison with pure GaSe and S-doped GaSe crystals. AgGaS₂-doped GaSe (GaSe:AgGaS₂) crystal was grown by Bridgman technique from the melt of GaSe:AgGaS₂ (10.6 wt.%). Its real composition was identified as GaSe:S (2 wt.%). Al-doped GaSe (GaSe:Al) crystals were grown from the melt of GaSe and 0.01, 0.05, 0.1, 0.5, 1, 2 mass % of aluminium. Al content in the grown crystals is too small to be measured. The hardness of GaSe:S (2 wt.%) crystal grown from the melt of GaSe:AgGaS₂ is 25% higher than that of GaSe:S (2 wt.%) crystal grown by a conventional S-doping technique and 1.5- to 1.9-times higher than that of pure GaSe. GaSe:Al crystals are characterized by 2.5- to 3-times higher hardness than that of pure GaSe and by extremely low conductivity of ≤ 10^− 7 Om^− 1 cm^− 1. A comparative experiment on SHG in AgGaS₂-, Al-, S-doped GaSe and pure GaSe is carried out under the pumps of 2.12-2.9 μm fs OPA and 9.2−10.8 μm ns CO₂ laser. It was found that GaSe:S crystals possess the best physical properties for mid-IR applications among these doped GaSe crystals. GaSe:Al crystals have relatively low conductivity which have strong potential for THz application.     

Compact and portable terahertz source by mixing two frequencies generated simultaneously by a single solid-state laser

We have demonstrated a compact and portable terahertz (THz) source, based on difference-frequency generation in a GaSe crystal. The two input frequencies, required for achieving frequency mixing, are generated by a single Q-switched Nd:YLF laser incorporating two laser resonators. The average power of the THz output reaches 1 μW at 1.64 THz (182 μm) within a linewidth of 65 GHz. Such a THz source can be packaged into a compact and portable system.     

晶向ZnTe单晶的太赫兹辐射及探测

通过Te熔剂方法生长出〈331〉晶向的ZnTe体单晶,利用X射线衍射和红外透射显微技术对材料进行了测试.在钛 宝石激光器的泵浦下,利用〈331〉晶向的ZnTe晶体辐射－探测到太赫兹波,激发频谱可达5 THz左右.〈331〉晶向的ZnTe晶体表现出良好的太赫兹辐射性能.     

Single-frequency terahertz source pumped by Q-switched fiber lasers based on difference-frequency generation in GaSe crystal

We demonstrate a unique terahertz (THz) source that is compact, utilizes recently developed all-fiber Q-switched lasers, and is based on difference-frequency generation in a GaSe crystal. A single piezo simultaneously Q switched the two fiber lasers by using stress-induced birefringence, to achieve the temporal overlap of pulses from the two fiber lasers. These correlated pulses then combine in the GaSe crystal to produce coherent and highly monochromatic THz pulses. The peak power for this THz source can reach 0.53 mW, corresponding to an average power of 0.43 microW and a conversion efficiency of 4.75 x 10(-7). The estimated linewidth of this THz source can be as narrow as approximately 35 MHz or 1.17 x 10(-3) cm(-1).     

GaSe晶体的双光子吸收对太赫兹输出的影响

根据光整流效应,利用超快激光脉冲泵浦GaSe晶体实现了0.2~2.5 THz的宽带太赫兹辐射输出。禁带中的电子在两个800 nm光子的作用下激发到导带中形成自由载流子,进而吸收所产生的太赫兹辐射,最终导致太赫兹的输出随泵浦功率的增加而趋于饱和。为了研究双光子吸收对太赫兹输出的影响,测量了800 nm处的GaSe晶体的双光子吸收系数,结果为 0.165 cm/GW。通过对太赫兹输出实验数据的拟合,得到GaSe晶体中自由载流子对太赫兹输出的吸收截面为1×10^-15 cm²。本文的研究结果可用于优化GaSe晶体在强激光泵浦下的太赫兹转换效率。     

不同掺杂Zn0.95Cd0.05Te〈110〉单晶的THz辐射特性研究

利用太赫兹(THz)时域光谱技术研究了不同掺杂的Zn_0.95Cd_0.05Te〈110〉单晶产生THz辐射的特性.实验发现，当晶体的直流电阻率ρ>10² Ω·cm时，晶体产生THz辐射的效率随着晶体电阻率的增加而增加，但当电阻率ρ＞10⁶ Ω·cm时，晶体产生THz辐射的效率出现饱和甚至可能下降.光谱测量结果表明，此类晶体在THz波段的透过率基本上取决于其低频电阻率，但除了晶体对THz辐射的吸收这一因素外，其色散性质的变 关键词： THz ZnCdTe 时域光谱     

Enhancement of terahertz wave difference frequency generation based on a compact walk-off compensated KTP OPO

A compact, walk-off compensated dual-wavelength KTP OPO near the degenerate point of 2.128 μm pumped by a Nd:YAG pulsed laser is employed as the pump for terahertz (THz) source based on difference frequency generation (DFG) in a GaSe crystal. Coherent THz radiation that is continuously tunable in the range of 81-1617 μm (0.186-3.7 THz) is achieved. An enhancement of 76.7% in average for the THz energies at different wavelengths is realized using the walk-off compensated KTP OPO than the common one. Using a 8 mm-long GaSe crystal, the maximum output THz pulse energy is 48.9 nJ with the peak power of 11 W, corresponding to the energy conversion efficiency of 5.4 × 10^− 6 and the photon conversion efficiency of about 0.09%.     

Compact and widely tunable terahertz source based on a dual-wavelength intracavity optical parametric oscillation

In this paper, a continuously tunable terahertz (THz) source is obtained using a compact intracavity pumped dual-wavelength optical parametric oscillation operating around 2.1 μm as difference-frequency generation pump source. The tuning range of the THz-wave frequency covers from 0.147 THz to 3.651 THz. Based on the collinear difference-frequency generation in the GaSe crystal, the experiment result shows that our schematic is a good option to construct a compact and portable terahertz source with widely tunable range.     

Energy Scaling of Terahertz Pulses Produced through Difference Frequency Generation

We study the energy scaling of terahertz(THz) emission through difference frequency generation of near-infrared pulses, and demonstrate that Gigawatt few-cycle THz transients at the central frequency of 30 THz are produced from GaSe crystal pumped by two pulses at 1.65 and 1.95 micrometers, with the high quantum yield of 28%.Our analysis indicates that the high yield of DFG originates from the largely reduced group velocity mismatch as the long-wavelength pumping pulses are employed.     

Generation of backward terahertz waves in GaSe crystals

We have observed a backward-propagating terahertz wave by mixing two coherent infrared beams in two GaSe crystals. For the 47 mm long crystal, the output wavelength can be tuned in the wide range of 167.6 to 2060 microm (0.146 to 1.79 THz), whereas the output peak power reaches 217 W. The corresponding power conversion efficiency is approximately 0.03%.     

New lasers based on c-cut vanadat crystals

Spectroscopic and lasing properties of c-cut Nd-doped Nd:Gd_0.7Y_0.3VO₄, Nd:YVO₄, and Nd:GdVO₄ crystals were investigated. Spectral tuning from 1062 to 1067 nm was demonstrated. CW, Q-switching and mode-locking regimes for two-color laser operations were realized. A novel THz source based on Q-switch two-color diode-pumped solid state c-cut Nd:GdVO₄ laser with Filter Lio as selective element and the GaSe nonlinear optical crystals as convertor was demonstrated. Terahertz radiation with wavelength 436 mm (0.56 THz) was detected. One picosecond laser pulses in mode-locking diode pumped c-cut vanadat lasers with a Kerr-lens and PbS-doped glasses as saturable absorbers are observed.     

增益饱和对光学差频产生太赫兹辐射的功率和稳定性的影响

数值模拟并分析了以GaSe晶体为例对光学差频产生太赫兹（THz）波的特性.结果表明：当THz波长为227.5 μm,晶体长度为26.3 mm时,产生THz波功率达到增益饱和,在增益饱和点输出最高峰值功率可以达到945 W.由于晶体吸收的影响,THz波的增益饱和区是输出功率的非稳定区,而THz波的输出稳定区位于增益饱和区之后,在稳定区的THz波稳定性取决于抽运光的稳定性.当THz波波长为227.5 μm时,达到稳定区所需晶体长度为37.9 mm,此时THz波输出峰值功率可以达到735 W. 关键词： 光学差频 太赫兹辐射 稳定性     

Hole traps in GaSe:Co single crystals

In order to clarigy the nature of the cobalt related hole traps (CRHT) in GaSe single crystals, GaSe:Co single crystals were grown by the Bridgman method and the optical absorption spectra, the photoconductivity spectra and the thermally stimulated current (TSC) were investigated. The energy levels of the CRHT in GaSe:Co single crystals were located at 0.18, 0.28, 0.38, 0.49 and 0.57 eV above the valence band. The optical absorption peaks and the photoconductivity peaks corresponding to the CRHT were observed in the wavelength range from 650 to 950 nm and these peaks are respectively attributed to the carrier transitions from the CRHT to the indirect conduction band of GaSe:Co single crystals.     

Tunable terahertz generation from one CO2 laser in a GaSe crystal

Coherent terahertz pulses have been generated at a range of 236.3-1104.5 μm (0.27-1.3 THz) by one CO₂ laser with dual-wavelength output based on collinearly phase-matched different frequency generation (DFG) in a GaSe crystal. This source has the advantages of compact and simplicity for tuning. The output power of the THz pulse and phase-matching conditions were investigated. The maximum single pulse energy of 11 nJ was generated at a frequency of 1.23 THz (243.6 μm), corresponding to a peak output power 182 mW.     

Effective nonlinear GaSe crystal. Optical properties and applications

We present an overview of the current state of the literature and research performed by the authors of the present paper on the experimental and theoretical results on the structural-, optical-, nonlinear optical (NLO)-properties (including two-photon absorption (TPA) and the terahertz (THz) range of spectra) and practical applications of a highly anisotropic Gallium Selenide (GaSe) semiconductor with emphasis on the ?-GaSe. Physical properties of ?-GaSe are important to researchers and designers developing different devices by using this material. This crystal possesses an outstanding NLO properties: high optical birefringence Δn ～ 0.3 at 700 nm; high transparency range (0.7?18.0 μm) with low absorption coefficient (α ≤ 0.3 cm^?1); very high nonlinear susceptibility χ⁽²⁾ (d ₂₂ ≈ 86 ± 17 pm/V, corresponding to (2.0 ± 0.4) × 10^?7 esu) that is used for phase matched second harmonic generation (SHG) in a wide transparency range; high power threshold for optical damage; possibility to perform optical frequency conversion under phase-matching conditions in the near- to mid-IR and THz range of spectra, etc. The domain structure of crystal in connection with the NLO properties is discussed as studied by confocal Raman microscopy experiments. Perspectives for future research of GaSe are considered in the present article, which does not pretend to be one reflecting all existing papers on GaSe crystal and discussed subjects.