One-pot synthesis of fluorescent nitrogen-doped graphene quantum dots for portable detection of iron ion

Nitrogen-doped graphene quantum dots (N-GQD) were synthesized by direct thermal decomposition of ammonium citrate tribasic. With the increment of torrefaction temperature, the average size of N-GQD was increased from 2.56 to 3.73 nm. Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy analysis (XPS) proved the successful doping of nitrogen atoms. Besides, the N-GQDs showed blue fluorescence which was quenched by Fe³⁺ ions, and the fluorescence intensity of N-GQDs decayed exponentially. Accordingly, the same quenching effect was observed on a test paper prepared by soaking paper in N-GQDs dispersion. The quenching mechanism was due to electron transfer between Fe³⁺ and functional groups on the surface of N-GQDs which could be confirmed by XPS and diameter growth. Therefore, through this simple method, N-GQDs with high blue fluorescence and high production yield (64%) can be prepared, which provided a new strategy for monitoring and collecting Fe³⁺ in environmental water.     

Modulating magnetism of nitrogen-doped zigzag graphene nanoribbons

We present a study of electronic properties of zigzag graphene nanoribbons （ZGNRs） substitutionally doped with nitrogen atoms at a single edge by first principle calculations. We find that the two edge states near the Fermi level sepa- rate due to the asymmetric nitrogen-doping. The ground states of these systems become ferromagnetic because the local magnetic moments along the undoped edges remain and those along the doped edges are suppressed. By controlling the charge-doping level, the magnetic moments of the whole ribbons are modulated. Proper charge doping leads to interest- ing half-metallic and single-edge conducting ribbons which would be helpful for designing graphene-nanoribbon-based spintronic devices in the future.     

Synthesis and electronic structure of nitrogen-doped graphene

The crystalline and electronic structure of nitrogen-doped graphene (N-graphene) has been studied by photoelectron spectroscopy and scanning tunneling microscopy. Synthesis of N-graphene from triazine molecules on Ni(111) surface results in incorporation into graphene of nitrogen atoms primarily in the pyridinic configuration. It has been found that inclusions of nitrogen enhance significantly thermal stability of graphene on nickel. An analysis of the electronic structure of N-graphene intercalated by gold atoms has revealed that the pyridinic nitrogen culminates in weak p-type doping, in full agreement with theoretical predictions. Subsequent thermal treatment makes possible conversion of the major part of nitrogen atoms into the substitutional configuration, which involves n-type doping. It has been shown that the crystalline structure of the N graphene thus obtained reveals local distortions presumably caused by inhomogeneous distribution of impurities in the layer. The results obtained have demonstrated a promising application potential of this approach for development of electronic devices based on graphene with controllable type of conduction and carrier concentration.     

Thermal properties of triangle nitrogen-doped graphene nanoribbons

We investigate the thermal properties of triangle nitrogen-doped graphene nanoribbons (TNGNs) with different nitrogen-doped concentrations (0.11% to 2.31%) at different temperatures ($200\text{K}～600\text{K}$) using non-equilibrium molecular dynamics. The results show that the nitrogen atoms doped at the edge of the defect can increase the thermal conductivity of graphene nanoribbons, but with the increase of the nitrogen-doped concentrations from 0.11% to 2.31%, the thermal conductivity decreases sharply. In addition, nitrogen atoms reduces the sensitivity of the thermal conductivity to temperature. Besides, the thermal rectification is found, and it increases with the raise of nitrogen-doped concentration. Finally, in order to verify the correctness of the thermal rectification, we calculate the phonon power spectra of TNGNs with nitrogen-doped concentrations of 0.11% and 2.31% at 300 K. These research has important reference value for the control of heat in microelectronic devices.     

Fabrication of functionalized nitrogen-doped graphene for supercapacitor electrodes

A unique and convenient one-step hydrothermal process for synthesizing functionalized nitrogen-doped graphene (FGN) via ethylenediamine, hydroquinone, and graphene oxide (GO) is described. The graphene sheets of FGN provide a large surface area for hydroquinone molecules to be anchored on, which can greatly enhance the contribution of pseudocapacitance. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and electrochemical workstation are used to characterize the materials. The nitrogen content exhibited in FGN can be up to 9.83 at.%, and the as-produced graphene material shows an impressive specific capacitance of 364.6 F g^?1 at a scan rate of 10 mV s^?1, almost triple that of the graphene (GN)-based one (127.5 F g^?1). Furthermore, the FGN electrodes show excellent electrochemical cycle stability with 94.4 % of its initial capacitance retained after 500 charge/discharge cycles at the current density of 3 A g^?1.     

Facile synthesis of hollow Fe2O3 nanotubes on nitrogen-doped graphene and their electrochemical performances

Ionics - The design and optimization of electrode materials are critically important for the development of high-performance supercapacitors. Herein, hollow Fe2O3 nanotubes supported on...     

Facile synthesis of nitrogen-doped reduced graphene oxide as an efficient counter electrode for dye-sensitized solar cells

A nitrogen-doped reduced graphene oxide (N-RGO) nanosheet was synthesized by a simple hydrothermal method and characterized by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electrode microscopy. After being deposited as counter electrode film for dye-sensitized solar cells (DSSCs), it is found that the synthesized N-RGO nanosheet has smaller charge-transfer resistance and better electrocatalytic activity towards reduction of triiodide than the reduced graphene oxide (RGO) nanosheet. Consequently, the DSSCs based on the N-RGO counter electrode achieve an energy conversion efficiency of 4.26%, which is higher than that of the RGO counter electrode (2.85%) prepared under the same conditions, and comparable to the value (5.21%) obtained with the Pt counter electrode as a reference. This N-RGO counter electrode offers the advantages of not only saving the cost of Pt itself but also simplifying the process of counter electrode preparation. Therefore, an inexpensive N-RGO nanosheet is a promising counter electrode material to replace noble metal Pt.

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Graphical abstract A nitrogen-doped reduced graphene oxide nanosheet was synthesized by a simple hydrothermal method, which is a promising counter electrode material to replace noble metal Pt.

     

Three-dimensional nitrogen-doped graphene/sulfur composite for lithium-sulfur battery

A three-dimensional nitrogen-doped graphene/sulfur composite (NGS3) was synthesized by a simple hydrothermal method using urea as the nitrogen source and subsequent thermal treatment. The structure and electrochemical performance of the prepared nitrogen-doped graphene/sulfur composite (NGS3) were confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), Energy dispersive spectroscopy mapping (EDS), and galvanostatic charge/discharge measurements. SEM and EDS mapping show that NGS3 exhibits a porous structure with uniform distribution of sulfur. Compared with the graphene/sulfur composite (NGS1), NGS3 delivers an outstanding rate capability with 1501, 1278, 1136, and 1024 mAh g^?1 at 200, 400, 800, and 1000 mA g^?1, respectively, and the cycle stability of NGS3 is also wonderful, a reversible discharge capacity of 1330 mAh g^?1 is obtained after 80 cycles under the current rate of 200 mA g^?1. The wonderful electrochemical performance could be attributed to the special three-dimensional conductive structure with the help of nitrogen atom.     

Hydrogen-free CVD diamond synthesis

A wide band gap semiconductor, diamond, has recently emerged as an important and promising material for a wide field of optoelectronic and electronic applications. In traditional CVD diamond synthesis, we thought that hydrogen radicals were inevitable. But, in this work, we are trying to synthesize diamond particles without hydrogen, in a process we call “hydrogen-free diamond synthesis”. Graphite rods were used as heaters and, at the same time, carbon sources. In argon or helium atmospheres, completely free from hydrogen, diamond particles were synthesized and confirmed with SEM photographs and Raman spectra for the first time. OES (Optical Emission Spectroscopy) results will be presented.     

Room-temperature terahertz detection based on CVD graphene transistor

We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an Si O2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 n W/Hz1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.     

Ultrasonic-assisted hydrothermal synthesis of cobalt oxide/nitrogen-doped graphene oxide hybrid as oxygen reduction reaction catalyst for Al-air battery

A persistent ultrasound-assisted hydrothermal method has been developed to prepare cobalt oxide incorporated nitrogen-doped graphene (Co₃O₄/N-GO) hybrids. The electrochemical behaviors and catalytic activity of the prepared hybrids have been systematically investigated as cathode materials for Al-air battery. The results show that ultrasonication can promote the yield ratio of Co₃O₄ from 63.1% to 70.6%. The prepared Co₃O₄/N-GO hybrid with ultrasonication exhibits better ORR activity over that without ultrasonication. The assembled Al-air battery using the ultrasonicated Co₃O₄/N-GO hybrid exhibited an average working voltage of 1.02 V in 4 M KOH electrolyte at 60 mA∙cm⁻², approximately 60 mV higher than that using hybrid without ultrasonication. This should be attributed to large number density of fine Co₃O₄ particles growing on the dispersed GO sheets under the persistent ultrasonication. The related ultrasonic mechanism has been discussed in details.     

Hydrothermal synthesis of highly nitrogen-doped carbon powder

Nitrogen-doped carbon powder (NCP) with high and controllable dopant concentration was facilely synthesized via hydrothermal treatment of sucrose under ammonia followed by calcination. The dopant concentration of the as-synthesized carbon powder can be easily adjusted in the range of 4.37-17.82 wt.% by careful choice of the reaction conditions. The precursor with high nitrogen content was prepared by aminization reaction between sucrose and ammonia in hydrothermal condition, amine groups are successfully introduced into the precursor molecule, which groups convert finally to pyridinic-like and graphitic-like structure in the followed heat-treatment process. Various techniques, including the elemental analysis, TG-DTA, XPS, XRD, SEM and FTIR, were employed to characterize and assess the compositional and structural properties of the precursor and final nitrogen-doped materials. The present work propose a novel method for synthesis of highly nitrogen-doped carbon materials.     

Photoluminescence studies of nitrogen-doped TiO2 powders prepared by annealing with urea

Photoluminescence and excitation spectra have been investigated for undoped and nitrogen-doped TiO₂ powders at low temperatures. A broad luminescence band peaking at 2.25?eV is observed in the undoped TiO₂ powders. The 2.25?eV luminescence band exhibits a sharp rise from 3.34?eV in the excitation spectrum reflecting the fundamental absorption edge of anatase TiO₂. On the other hand, the N-doped TiO₂ powders obtained by annealing with urea at 350 and 500°C exhibit broad luminescence bands around 2.89 and 2.63?eV, respectively. The excitation spectra for these luminescence bands rise from the lower energy side of the fundamental absorption edge of anatase TiO₂. The origin of the luminescence bands and N-related energy levels formed in the band-gap of TiO₂ are discussed.     

Facile and highly effective synthesis of nitrogen-doped graphene quantum dots as a fluorescent sensing probe for Cu2+ detection

Nitrogen-doped graphene quantum dots (N-GQDs) with high blue fluorescence efficiency were synthesized by the hydrothermal method from p-Phenylenediamine and p-Coumaric acid. The N-GQDs possess several superiorities, most significantly in excellent solubility and superior photostability. Besides, the as-prepared N-GQDs exhibit a uniform size distribution with a diameter of about 3.8 ± 0.5 nm. After dispersing the N-GQDs in water, the formed aqueous solution still presents a stable and homogeneous phase even after 2 months at room temperature. The N-GQD dispersion was further utilized as sensing probes for the selective detection of copper ions (Cu²⁺), which is realized by the photoluminescence (PL) quenching of N-GQDs after adding Cu²⁺. The detection limit for Cu²⁺ was found to be 57 nM L⁻¹, with superior selectivity in the presence of other commonly interfering metal ions. The presented results in this study provide a facile and high-efficiency method for synthesizing N-GQDs, with ultra-high detectivity and selectivity for Cu²⁺ detection, offering numerous opportunities for the development of biosensing, bioimaging, environment monitoring, and others.     

Structure of graphene nanotube hybrid materials produced via single-stage CVD

The structures of graphene layer-carbon nanotube hybrid films produced via CVD with a single-stage flow of acetylene into a chamber containing a prepared substrate are studied. It is shown that such films have a hybrid double-layer structure consisting of a graphene layer and a dense continuous network of nanotubes. The graphene layer contains continuous extended areas 10–50 μm in size and island areas ～0.1 μm in size. TEM images lead to the conclusion that the graphene layer and carbon nanotubes are bound by covalent bonds.     

The influence of chemical solvents on the properties of CVD graphene

The ultra‐clean and defect‐free transfer of chemical vapor deposition (CVD) graphene is essential for its application in electronic devices. Here, we study the influence of commonly used etching solvents during the transfer process, i.e. ammonium persulfate, ferric chloride, and ferric nitrate, on the properties of CVD graphene by Raman spectroscopy. Obvious blue shift and broadening of Raman G and 2D peaks were observed for graphene transferred by ferric chloride and ferric nitrate, as compared to that transferred by ammonium persulfate. These changes are attributed to p‐doping as well as reduction of phonon lifetime of graphene in the presence of residue iron compounds during the transfer process. The latter would also introduce a great reduction of thermal conductivity of graphene, e.g. with 76% reduction for graphene transferred by ferric nitrate as compared to that transferred by ammonium persulfate. This work would provide valuable information for the transfer of high‐quality CVD graphene. Copyright © 2014 John Wiley & Sons, Ltd.     

Structural evolution in CVD graphene chemically oxidized by sulphuric acid

The role of sulphuric acid (H₂SO₄) in fabrication graphene oxide besides as intercalant has not been well addressed. In this work, Raman spectroscopy is used to monitor structural evolution in chemical vapor deposition (CVD) graphene chemically oxidized by dilute H₂SO₄. From the analysis of Raman spectra of oxidized graphene, we propose that oxidation first initiates at preexisting defects, and vacancy‐like defects are formed. Following is the radial growth of the vacancy, and oxidation pits appear in graphene. This assumption is further confirmed by atomic force microscope measurement. It is also found that with increase of amounts of defects, G peak is blue shift, and this is explained by defect and hole doping effect. Hole doping in graphene is much stronger at hexagon regions near the oxidation pits. This work helps in understanding the role of H₂SO₄ in fabrication graphene oxide as oxidizer as well as helps in obtaining structure information of graphene oxide. Copyright © 2015 John Wiley & Sons, Ltd.