Nonlinear optical correction of the pulse shape from a directly modulated DFB laser

In this work, the effect of modulation instability (MI) in optical fiber is used to reshape nanosecond pulses form a directly modulated diode laser. Our configuration includes a fiber where MI causes the side lobes in the signal spectrum and a filter at the fiber output rejecting the side lobes. Simulations show abrupt drop of the transmission of the setup if pulse power is above some critical value. We investigated the transmission for fibers with lengths in the range between 62-m and 4.5-km. The critical power was found to be inversely proportional to the fiber length. An average scaled critical power is 2.16 W km. We demonstrated the application of the method for rejection of the transient peak in a directly modulated diode laser.     

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the above-mentioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold.It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.PACS numbers: 05.45.Pq, 42.55.Px, 42.65.Sf     

Measurement for waveform and chirping of optical pulses generated by directly modulated DFB laser and external EA modulator

Optical pulse generated by directly modulated distributed feedback (DFB) laser and external electro-absorption modulator (EAM) in virtue of the method of fringe-resolved second-harmonic generation correlation was measured. Without the pulse's shape being assumed, through the method of iterative reconstruct interference signal, the waveform and phase of the pulse was reconstructed. The full-wave at half-maximum (FWHM) of the pulse generated by EAM under the microwave modulation of 2.5 GHz is 30.8 ps, whose shape is close to that of the sech²-type pulse. The FWHM of the pulse generated by DFB laser is 18.3 ps, whose shape is close to that of the Lorenz-type pulse. And the original chirping of EAM is smaller than that of DFB laser.     

Bidirectional communication using delay coupled chaotic directly modulated semiconductor lasers

Chaotic synchronization of two directly modulated semiconductor lasers with negative delayed optoelectronic feedback is investigated and this scheme is found to be useful for efficient bidirectional communication between the lasers. A symmetric bidirectional coupling is identified as a suitable method for isochronal synchronization of such lasers. The optimum values of coupling and feedback strength that can provide maximum quality of synchronization are identified. This method is successfully employed for encoding/decoding both analog and digital messages. The importance of a symmetric coupling is demonstrated by studying the variation of decoding efficiency with respect to asymmetric coupling.     

Transient amplification characteristics of frequency modulated wave in semiconductor plasmas

We perform an analytical investigation of modulational interaction of an electromagnetic pump wave in a transversely magnetized weakly polar semiconductor plasma medium. Based on the hydrodynamic model, a critical examination of frequency modulational amplification is made in a moderately doped III–V semiconductor crystal (n-GaAs) duly shined by pulsed 10.6 µm CO₂ laser. The effect of electron-LO phonon interaction and coupled magnetoplasma excitations on the nonlinear interaction of a laser beam adds new dimension to the analysis. Steady state and transient gain coefficients, threshold pump intensity and optimum-pulse duration for the onset of modulational instability are estimated. The paper concentrates on the study of gain characteristics mainly in transient region. Effect of doping and applied magnetic field on the threshold pump intensity and growth rate has been significantly analysed. Graphical analysis interprets strong dependence of transient amplification characteristics on these parameters. So a judicious choice of physical parameters may develop growth at much lower pump intensity improving the cost effectiveness of the system. These results may help to be important for understanding and improving the performance of modulator.     

Sampled grating distributed feedback (SG DFB) semiconductor laser diode

A laser diode was designed using a method called sampled grating (SG) distributed feedback (DFB), in which the couplings have been distributed in certain regions along the laser cavity (i.e., regions contain grating). These regions play a big role in pushing the main mode to propagate faster than the side mode by increasing the time delay between them. This delay is due to the empty regions (i.e., regions without grating) along the laser cavity. Neither a phase shift nor incomplete grating have been taken into account with the new structure. The theoretical model in the present work is based on the coupled-mode equations which have been solved numerically by the mean of transfer matrix method (TMM).     

Single mode rate equations for two sections self—pulsating DFB laser

We Propose a set of single mode rate equations for multi-section distributed feedback(DFB) lasers. On the basis of the rate equations, the self-pulsation in the two-section DFB lasers with asymmetrical injection current was explained. It was found that the dynamic distribution of the power in two sections play key role in the self-pulsation running.     

Current-driven state-bistability and power-bistability in a DFB semiconductor laser subject to optical injection

In this paper, current-driven state-bistability and power-bistability in a distributed feedback (DFB) semiconductor laser (LD) subject to external optical injection have been investigated experimentally. The results show that, by sweeping the bias current of slave LD along different routes nearby the threshold, both the power-bistability and the state-bistability between locking and bimodal regime can be observed under the suitable injection power, but these bistable phenomena will disappear under much large injection power. Additionally, the dependence of the width of the state-bistablility loop on the injection power has been discussed.     

Design of a single-mode directly modulated orbital angular momentum laser

We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex top grating containing the real part and the imaginary part modulations and the side grating. The side grating etched on the periphery of the microcylinder/microring cavity can select a whispering gallery mode with a specific azimuthal mode number, while the complex top grating can scatter the lasing mode with travelling-wave pattern vertically. With the cooperation of the gratings, the laser works with a single mode and emits radially polarized OAM beams. With an asymmetrical pad metal on the top of the cavity, the OAM on-chip laser can firstly be directly modulated with electrical pumping. Due to the small active volume, the laser with low threshold current is predicted to have a high direct modulation bandwidth about 29 GHz with the bias current of ten times the threshold from the simulation. The semiconductor OAM laser can be rather easily realized at different wavelengths such as the O band, C band, and L band.     

Injection locked multi-section gain-coupled dual mode DFB laser for terahertz generation

A dual mode multi-section gain-coupled distributed feedback laser with tunable mode spacing is subharmonically injection locked at 0.315 THz. The injected signal consists of an optical comb with harmonics 35 GHz apart and a bandwidth of approximately 1.9 THz. The optical comb is a result of strong four-wave mixing in a highly-nonlinear dispersion-shifted fiber. In order to observe locking of the multi-section laser, the output is optically downconverted to RF frequencies using the same optical comb. The locked multi-section DFB laser is a coherent and tunable optical source suitable for continuous-wave terahertz generation systems.     

调制半导体激光显示超声行波波前

本文在时域信息相关理论的基础上,提出了一种简便的用连续调制的半导体激光束显示超声行波波前的方法,实验上得到了证实。     

Mixed external cavity mode dynamics in a semiconductor laser

We observe experimentally and numerically novel mixed-mode dynamic states of a diode laser subject to two delayed optical feedbacks. These states have been proposed and analyzed within the framework of the Lang-Kobayashi single-feedback model. Such states are combinations of two distinct external cavity modes and can be identified through a characteristic sequence of a Hopf bifurcation followed by a secondary quasi-periodic bifurcation. We present experimental and numerical results that demonstrate such sequences.     

All optical Flip-Flop based on a nonlinear DFB semiconductor laser: Theoretical study

A new design of an all optical Flip-Flop is proposed. It consists of a nonlinear distributed feedback (DFB) laser. The wave guiding layer of the DFB laser consists of linear grating section followed by a nonlinear one, and both sections are separated by a phase shift section. In the OFF-state, the real part of the refractive index in the wave guiding layer forms a Bragg grating. In the ON-state, it forms a Bragg grating with a phase shift section. Optical gain is achieved by current injection in the semiconductor active layer. Nonlinearity in the nonlinear layers of the semiconductor grating was achieved by direct absorption at the edge of the absorption band (Urbach tail). Numerical simulation shows that the device switches in a nanosecond time scale.     

Electrical pumping of a third-order mode semiconductor laser

AlGaAs-based quantum well laser structures with third-order waveguide mode emission at 775 nm are a promising route toward compact twin-photon sources at 1.55 μm based on the principle of modal phase matching between the pumping frequency and fundamental modes at half frequency in III–V semiconductor waveguides. Following the demonstration and characterization of an optically pumped third-order mode semiconductor laser, in this paper we present data of the corresponding structure under conditions of electrical pumping. By pumping electrically and optically the same sample made for current injection, identical transverse far-field angular laser mode profiles are measured and with very low parasitic losses. Although they do not follow the third-order mode emission pattern as it is expected, however this means that the different way of pumping, that of the electrical one as compared to optical pumping is not responsible for the absence of third-order mode emission. Furthermore, since the undoped optically pumped laser sample correctly emits on the third-order mode, it is concluded that the cladding layers of the structure still need to be optimized in doping and thickness, in order to reduce the internal losses for the third-order mode.     

Frequency-stable and ultranarrow-linewidth semiconductor laser locked directly to an atomic-cesium transition

We describe a new method for semiconductor laser FM noise reduction. A Doppler-free Faraday resonance in Cs vapor provided optical feedback, and FM sideband saturation spectroscopy in a second Cs cell provided electronic feedback. The combined optical and electronic feedback allowed us to reduce the low-frequency FM noise power by more than 6 orders of magnitude, which resulted in a sub-100-Hz-linewidth semiconductor laser locked directly to an atomic transition frequency.     

分布反馈半导体激光器频率调制特性的速率方程分析

本文引入描述分布反馈半导体激光器中光场纵向分布不均匀对其阈值条件影响的α_p和δ_p因子.建立了包含空间烧孔效应的速率方程模型,并给出小信号强度、频率调制响应表达式.数值求解理想分布反馈半导体激光器的α_(th)L和δL随平均光子密度变化曲线及对应的α_p和δ_p因子.数值模拟表明,空间烧孔对调制特性影响甚大,频率调制相应与偏置电流有关,为得到较宽的调制频带必须适当选择工作点.     

Suppression of mode partition noise in a multiwavelength semiconductor laser through hybrid mode locking

We demonstrate the suppression of intensity fluctuations, which are known as mode partition noise, in a multiwavelength semiconductor laser by using a hybrid mode-locking scheme. The laser design incorporates a saturable absorber and a gain-modulated semiconductor optical amplifier, along with spectral filtering, in an external cavity to achieve multiwavelength hybrid mode locking. The mode-locked laser produces an error-free (pulse Q>13) 300-MHz optical pulse train in each of three wavelength channels.     

Self-mixing interference effect of DFB semiconductor lasers

This paper analyzes the self-mixing interference in DFB (distributed feedback) semiconductor lasers. The general expression of the threshold gain and frequency in the DFB lasers was deduced. Numerical simulations indicate that, for specific coupling coefficient and cavity length value, the DFB lasers are more sensitive to optical feedback than the Fabry–Perot semiconductor laser. These results show that high-accuracy self-mixing sensors can be obtained by using the DFB lasers. PACS 42.55.Px; 42.60.Lh; 42.87.Bg