化学计量比对镓酸镁尖晶石陶瓷微波介电性能的影响

尖晶石型微波介质陶瓷因高品质因数和可调的谐振频率温度系数在无线通信等领域应用广泛。本文通过无压烧结制备了MgO·nGa₂O₃(n=0.975、1.00、1.08和1.17)尖晶石陶瓷,采用XRD Rietveld全谱拟合研究了化学计量比对晶体结构的影响,并结合键价理论模型探究了微波介电性能与晶体结构的关系。结果表明:MgO·nGa₂O₃陶瓷相对介电常数(ε_r)的变化与晶格常数和离子极化率有关;品质因数(Q×f)受键强和阳离子有序度的共同影响,随n值增大从165 590 GHz下降至109 413 GHz;而谐振频率温度系数(τ_f)与晶体热膨胀系数相关。制备的MgO·0.975Ga₂O₃陶瓷具有优异的微波介电性能:ε_r=9.69、Q×f=165 590 GHz(频率14 GHz下)和τ_f=-7.12×10^-6/℃。     

Effects of 50 MeV Si ion irradiation on nonlinear optical benzimidazole single crystals

The 50 MeV Si⁷⁺ ion irradiation induced modifications on structural, dielectric, optical and mechanical properties of Vertical Bridgman grown benzimidazole (BMZ) crystals were studied. The high resolution X‐ray diffraction studies show the quality of as grown BMZ and irradiated BMZ crystals. The dielectric constant and dielectric loss as a function of frequency and temperature was studied in detail. The ion induced mechanical behaviour of both as grown BMZ and irradiated BMZ crystals has been explained with the indentation effects using Vickers microhardness tester. UV‐VIS. studies reveal the decrease in bandgap values and defects on irradiation. The above results are discussed in detail. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nearly constant dielectric loss of glasses containing different mobile alkali ions

Recently, Rivera et al. [Phys. Rev. Lett. 88 (2002) 125902] found that the magnitude of the nearly constant dielectric loss (NCL) in alkali triborate glasses decreases as m^−1/3 with increasing alkali ion mass m. We have carried out conductivity measurements on aluminosilicate and aluminogermanate glasses containing different mobile alkali ions, and we show that the magnitude of the NCL does not follow a m^−1/3 relation. Instead, we find a strong correlation between the magnitude of the NCL, the dc conductivity, and the dielectric relaxation strength which is valid for various ionic glasses at temperatures above 173 K.     

The effect of hydrostatic pressure on the dielectric constants, and their temperature dependences, of phosphate and tellurite glasses

Measurements of the pressure dependence of the static dielectric constant of tellurite (pure TeO₂ and 67%TeO₂ + 33%WO₃) and samarium phosphate (5%Sm₂O₃ + 95%P₂O₅ and 15%Sm₂O₃ + 85%P₂O₅) glasses at elevated pressures (0–70 kbar) for a range of temperatures (77–380 K) are reported. The electrical properties under pressure have been determined from the low-frequency complex plane analysis of glass discs contained within a Bridgman opposed anvil cell. The most notable observation is that the pressure dependence of the static dielectric constant, of all glasses studied, is positive, for example for vitreous TeO₂ ln ε/P is equal to 4.41 × 10⁻¹¹ (Pa⁻¹) at 293 K. Behaviour of this type is common to a number of materials (plastics and chalcogenide glasses) for which it is not possible to define any long-range order. It is in direct contrast with the behaviour of crystalline insulators, for which ε/P is usually negative. The effect of pressure on the dielectric constant has been analysed using two different approaches based on the macroscopic Clausius-Mossotti equation. The effects of high pressure on the dielectric constant have been correlated with the temperature dependence of the dielectric constant at atmospheric pressure.     

沉积氧压对Bi1.5ZnNb1.5O7薄膜的结构和介电特性的影响

采用固相反应法合成具有焦绿石立方结构的Bi1.5ZnNb1.5O7(BZN)陶瓷靶材,采用脉冲激光沉积法在Pt/SiO2/Si(100)基片上制备立方BZN薄膜。研究了沉积氧压的变化对薄膜的结晶性能,微观形貌以及介电性能的影响。结果表明:沉积的BZN薄膜都呈现出立方焦绿石单相结构,但是薄膜的取向随氧压变化而变化。当沉积氧压为10 Pa时,薄膜的(222)晶面拥有最强的择优取向。随着氧压的升高,BZN薄膜的介电常数明显降低。在10 Pa氧压下沉积的BZN薄膜展示出介电可调特性为5%(500 kV/cm)。     

Electrical properties of Al-CeO2-Al thin film capacitor structures

Cerium Oxide films were prepared by vacuum thermal evaporation from tantalum boat in a conventional vacuum coating unit. Current-voltage characteristics were studied for different film thicknesses. The breakdown voltage (V_B) and dielectric field strength (E_B) were calculated. It is found that the breakdown voltage increases and dielectric field strength decreases as the thickness of the film increases. The applicability of Forlani-Minnaja relation is discussed. Current-voltage characteristics were also drawn at different temperatures and breakdown voltages were calculated. The breakdown voltage decreases as the temperature of the structure increases but the variation is nonlinear. The variation of current density with temperature was studied and the activation energy for the migration of charge carriers was calculated and it is about 0.52 ev. The results were discussed.     

Bi1.65Zn1.0Nb1.5O7.225陶瓷和薄膜的结构和介电性能对比

以立方焦绿石Bi1.5Zn1.0Nb1.5O7(BZN)为配方基础,通过掺入过量10％的Bi2O3,形成Bi1.65Zn1.0Nb1.5O7.225非化学计量比分子式.采用固相反应法合成具有焦绿石立方结构的Bi1.65Zn1.0Nb1.5O7.225陶瓷,并采用脉冲激光沉积法在Pt/SiO2/Si(100)基片上制备其薄膜.对比研究了非化学计量比Bi1.5Zn1.0Nb1.5O7.225陶瓷和薄膜的结晶性能,微观形貌以及介电性能的差异.结果表明烧结的Bi1.65Zn1.0Nb1.5O7.225陶瓷和沉积的BZN薄膜都保持立方焦绿石单相结构,但是薄膜展现出较强的(222)晶面择优取向.陶瓷和薄膜的晶格常数,微观形貌都体现出差异.对比二者的介电特性后发现,Bi1.65Zn1.0Nb1.5O7.225薄膜的介电常数明显高于陶瓷的介电常数,这归因于薄膜和块体材料之间的差异,例如厚度,致密度,择优取向等.     

压电晶体YbBa3(PO4)3的生长与性质表征

压电材料在振动传感器、压力传感器和超声波压电换能器等器件技术领域有着广泛应用,探索新型压电晶体材料用于特种压电传感器件的研发具有重要意义。本文利用传统的提拉法生长出具有高熔点(~1 800 ℃)的磷酸钡镱(YbBa₃(PO₄)₃,YbBP)新型压电晶体。X射线衍射分析表明,该晶体属于立方晶系I43d空间群,晶胞参数为a=b=c=1.043 5 nm。研究发现,该晶体沿垂直于(013)晶面的方向更容易生长。摇摆曲线半峰全宽测得为60.6″,表明生长的晶体具有较高的结晶品质。采用LCR电桥法、阻抗法和超声法测算了该晶体的相对介电常数和压电应变常数,得到晶体的相对介电常数ε₁₁和压电应变常数d₁₄分别为15.3和11.4 pC/N。该晶体不仅具有较好的压电性能,同时具有纯的面切变振动模态,表明该晶体在压电传感技术领域具有潜在应用。     

Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x

AC conductivity and dielectric relaxation measurements of the bulk amorphous compositions in the pseudo-binary system (As₂S₃)_1-x(PbS)_x (x = 0, 0.1, 0.4 and 0.5) in the frequency range 500 Hz-10 kHz and in the temperature span 180–450 K are reported. The temperature dependence of the ac conductivity, σ_ac(ω), has a broad structure at all frequencies in compositions with x = 0.1, 0.4 and 0.5 whose peak position is not thermally activated. A similar structure was also observed in the data on the dielectric constant, ε₁, which peaked at a frequency of 1 kHz in the composition with x = 0.5. Analysis of the results using the correlated barrier hopping model revealed that the electronic conduction takes place by single polaron and bipolaron hopping processes at high and low temperatures, respectively, in compositions containing Pb. The microstructure and phase-separation in the glasses containing Pb influence the electrical transport and dielectric dispersion. This study has revealed the possible presence of a phase transformation at around 300 K at a frequency of 1 kHz in the dielectric dispersion behaviour of composition with x = 0.5.     

石墨烯/钛酸锶钡/聚偏氟乙烯复合薄膜介电性能研究

首先制备了硅烷偶联剂改性后的石墨烯和钛酸锶钡粉体,然后采用溶液混合法制备了石墨烯/钛酸锶钡/聚偏氟乙烯薄膜,并且对复合薄膜的微观结构、介电性能和热稳定性进行测定和分析.结果表明:硅烷偶联剂成功接枝到石墨烯和钛酸锶钡粉体表面,石墨烯和钛酸锶钡粉体能够较好的分散在聚偏氟乙烯基体中,石墨烯的加入可以大幅度提高材料的介电性能.在石墨烯质量分数为4.06;时,复合薄膜的介电常数达到515,介电损耗为0.6.在质量分数4.14;时发生了渗流现象,介电常数达到1500,介电损耗也达到了5左右.石墨烯的加人大幅度提升了复合材料的介电性能,并且在常用温度范围内具有良好的温度稳定性.     

Growth and characterization of pure and lithium doped L‐alanine single crystals for NLO devices

Single crystals of pure and lithium substituted L‐alanine are successfully grown by slow evaporation method at constant temperature of 32°C. The effect of lithium dopant on crystal properties has been studied. Powder and single crystal XRD analysis confirms the structure and change in lattice parameter values for the doped crystals. The crystals were characterized by solubility studies, density, melting point measurements, FTIR and UV‐Vis‐NIR techniques. Thermal and mechanical stability of crystals were tested by TGA/DTA and micro hardness analysis. NLO activity of the crystals is found to be increased in the presence of lithium ions. The dielectric constant and dielectric loss of the crystals were studied as a function of frequency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

溅射温度对ITO/Ag/ITO多层复合薄膜的结构和光电性能的影响

本文采用直流磁控溅射分层溅射制备了氧化铟锡(ITO)/银(Ag)/ITO多层复合薄膜。系统研究了溅射温度对ITO/Ag/ITO多层复合薄膜的结构和光电性能影响。采用ITO(m(In₂O₃)∶m(SnO₂)=9∶1;直径60 mm)靶材和Ag(纯度99.999%;直径60 mm)靶材分层溅射,使ITO薄膜和Ag薄膜依次沉积在钠-钙玻璃基片上。结果表明,溅射温度对该薄膜的形貌和结构具有显著的影响。在中间Ag薄膜和顶层ITO薄膜的溅射温度均为120 ℃时,薄膜表面晶粒形貌由类球形转变为菱形,此时薄膜方阻为3.68 Ω/Sq,在488 nm处透射率为88.98%,且品质因数为0.03 Ω^-1,实现了低方阻高可见光透射率ITO/Ag/ITO多层复合薄膜的制备。     

Growth and characterization of L‐alanine doped KDP crystals

Potassium Dihydrogen Phosphate (KDP) is an excellent inorganic nonlinear optical (NLO) material with different device applications. Most of amino acids possess NLO property; therefore, it is of interest to dope them in KDP crystals. In the present study, amino acid L‐alanine doped KDP crystals were grown by slow aqueous solvent evaporation technique. The doping of L‐alanine was confirmed by the paper chromatography, the CHN analysis and the FT‐IR spectroscopy. The powder XRD was carried out to assess the single phase nature of the samples. The effect of doping on thermal stability of the crystals was studied by TGA and the kinetic and thermodynamic parameters of dehydration were evaluated. As the amount of doping increased the thermal stability of crystals decreased. However, the second harmonic generation (SHG) efficiency and the UV‐Vis spectroscopy studies indicated that as the L‐alanine doping increased the SHG efficiency and optical transmission percentage increased. The dielectric behavior of the samples has been studied. The variation of dielectric constant, dielectric loss (tanδ), a.c.resistivity and a.c.conductivity with frequency of applied field in the range from 100 Hz to 100 kHz was studied. The dielectric constant and dielectric loss decreased with increase the value of frequency of applied field. The dielectric constant and the dielectric loss values of L‐alanine doped KDP crystals were lower than the pure KDP crystals. The results are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric properties of ion plated titanium oxide thin films

Titanium oxide thin films have been deposited by an ion plating technique under rf glow. The structure of the deposited film has been found to be amorphous and the composition has been analysed by IR spectrum. Aging and annealing studies of the titanium oxide capacitors have been made. The dielectric constant of the film at 1 kHz has been estimated to be 12.4. The dependence of the capacitance and dielectric loss on frequency and temperature have been studied, and the results are discussed. The temperature coefficient of the capacitance has also been calculated.     

机械磨抛对CdZnTe薄膜阻变特性的影响

采用磁控溅射法在ITO玻璃上制备了CdZnTe薄膜,探究机械磨抛对CdZnTe薄膜阻变特性的影响。通过对XRD图谱、Raman光谱、AFM显微照片等实验结果分析阐明了机械磨抛影响CdZnTe薄膜阻变特性的物理机制。研究结果表明,磁控溅射制备的薄膜为闪锌矿结构,F43m空间群。机械磨抛提高了CdZnTe薄膜的结晶质量;CdZnTe薄膜粗糙度(Ra)由磨抛前的3.42 nm下降至磨抛后的1.73 nm;磨抛后CdZnTe薄膜透过率和162 cm^-1处的类CdTe声子峰振动峰增强;CdZnTe薄膜的阻变开关比由磨抛前的1.2增加到磨抛后的4.9。机械磨抛提高CdZnTe薄膜质量及阻变特性的原因可能是CdZnTe薄膜在磨抛过程中发生了再结晶。     

Electromagnetic reflection, shielding and conductivity of polypyrrole thin film electropolymerized in P-Tulensulfonic acid

The electrosynthesis of polypyrrole (PPy) thin film on stainless steel electrode was performed in P- Tulensulfonic acid. The electromagnetic reflection, shielding effectiveness, permittivity and conductivity in the frequency range 8.2 to 18 GHz were studied. The effect of change in the acid concentration on the properties is reported. The microwave conductivity varies from 16 S/cm to 415 S/cm with frequency. The dielectric constant and dielectric loss factor decreases with increase in frequency.     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

Nb2O5/Co2O3加入量对(Ba,Sr)TiO3基电容器陶瓷介电性能的影响

研究了Nb2O5/Co2O3加入量[质量分数,Nb/Co(摩尔比)=0.8]不同对(Ba,Sr)TiO3(Barium strontiumtitanate,BST)铁电电容器陶瓷介电性能的影响,得到不同Nb2O5/Co2O3加入量与BST陶瓷性能的关系。借助扫描电镜(SEM)和X射线衍射仪(XRD)研究不同Nb2O5/Co2O3加入量对BST陶瓷显微结构和物相的影响,探讨了Nb2O5/Co2O3加入量对BST陶瓷性能影响机理。结果表明:当Nb2O5/Co2O3加入量为1.0%时,可得到满足Y5V特性、介电常数为3934、介质损耗为2.6%综合性能好的BST陶瓷。Nb2O5/Co2O3加入量对BST陶瓷性能的影响是通过细晶化、压抑展宽居里峰、改善介电常数温度特性、减少介电常数、形成杂相、形成“晶核-晶壳”结构等进行。     

Annealing temperatures induced optical constant variations of methyl violet 2B thin films manufactured by the spin coating technique

Spin coating technique has been successfully applied to deposit uniform methyl violet 2B (MV2B) thin films. X-ray diffraction and Fourier-transform infrared techniques were used to study the crystal and molecular structure of MV2B. The optical properties of the films have been studied by spectrophotometer measurements of transmittance and reflectance at normal incidence of light in the spectral range of 200–2500 nm. The absorption and refractive indices are independent of the film thickness. The absorption parameters such as molar extinction coefficient, oscillator strength and electric dipole strength have been reported before and after annealing. The type of electronic transition is indirect allowed transition with onset energy gap of 1.82 eV and optical energy gap of 3.65 eV. Annealing temperatures reduce structure disorder, remove trap level, increase values of the onset and optical energy gaps and decrease refractive index. The single oscillator model has been applied for calculating the dispersion parameters. The oscillator energy, the dispersion energy, the high frequency dielectric constant, the lattice dielectric constant and the ratio of free charge carriers' concentration to its effective mass were evaluated before and after annealing. The dielectric properties of the films were also determined.     

铋系化合物改性的新型三元弛豫铁电体的性能研究

钛酸钡(BaTiO₃)陶瓷作为传统的介质电容器材料,其强铁电性会导致储能密度低下,但通过掺杂可以削弱铁电性来获得弛豫铁电体,提高储能性能。利用铋系化合物可增强弛豫特性,本文设计了BiScO₃和(Sr_0.7Bi_0.2)TiO₃取代改性的BaTiO₃基三元陶瓷材料: (0.99-x)Ba(Zr_0.1Ti_0.9)O₃-x(Sr_0.7Bi_0.2)TiO₃-0.01BiScO₃(缩写为BZT-xSBT-BS)。采用传统固相法制备的BZT-xSBT-BS陶瓷,相结构没有因为掺杂发生改变,在室温下均为纯的三方相钙钛矿结构。介电和铁电的测试与分析表明,BZT-xSBT-BS陶瓷具有典型的弛豫铁电特性。由于不等价离子Sr²⁺、Bi³⁺的掺杂导致界面松弛极化,可以增大BZT-xSBT-BS陶瓷的介电常数,但是受制于其慢的响应速度,陶瓷的介电损耗也显著增加。适量(Sr_0.7Bi_0.2)TiO₃可以提升BZT-xSBT-BS陶瓷的介电、铁电、应变和储能性能,x=0.015时的BZT-xSBT-BS陶瓷的综合性能较优:ε_r~10 372,tanδ~0.019,P_max=16.42 μC/cm²,E_c=1.41 kV/cm,S⁺_max=0.12%(@40 kV/cm),W_D=0.181 J/cm³,η=80.4%(@60 kV/cm)。