Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition

Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.     

Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition

Zn-doped AlInAs growth at high temperature, mainly at 750°C, by metalorganic chemical vapor deposition is investigated. When introducing DEZn during AlInAs growth, it is necessary to increase the TMAl flow rate in order to make the layer lattice-matched to InP. This is due to the enhanced In incorporation rather than the large covalent radius of Zn. To clarify the electrical characteristics, the dependence of the DEZn flow rate, the V/III ratio, and the growth temperature are investigated using the van der Pauw Hall method. In our growth system, a GaInAs intermediate layer is effective in preventing n-type inversion in Zn-doped AlInAs, which occurs when it is grown directly on an InP buffer layer. In addition, a large DEZn flow rate is effective for reducing carrier compensation in Zn-doped AlInAs layers grown at 750°C. Si impurities are apparently the cause of the type-inversion and compensation in Zn-doped AlInAs.     

Homoepitaxial growth of 6H–SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor

Homoepitaxial silicon carbide (SiC) films were grown on 3.5° off-oriented (0 0 0 1) 6H–SiC by metal-organic chemical vapor deposition (MOCVD) using bis-trimethylsilylmethane (BTMSM, C₇H₂₀Si₂). A pronounced effect of the growth conditions such as source flow rate and growth temperature on the polytype formation and structural imperfection of the epilayer was observed. The growth behavior was explained by a step controlled epitaxy model. It was demonstrated by high-resolution X-ray diffractometry and transmission electron microscopy that high-quality 6H–SiC thin films were successfully grown at the optimized growth condition of substrate temperature 1440°C with the carrier gas flow rate of 10 sccm.     

Hydrogen removal by annealing from C-doped InGaAs grown on InP by metalorganic chemical vapor deposition

Hydrogen removal from C-doped InGaAs grown on InP substrate by metalorganic chemical vapor deposition is discussed based on the dependence of hole concentration on various annealing conditions. It is revealed that the hydrogen removal rate becomes higher as the annealing temperature is higher and the activation energy of hydrogen removal is about 1.9 eV regardless of C-doped layer thickness. The hydrogen removal rate is also found to be inversely proportional to C-doped layer thickness, suggesting that the hydrogen removal reaction is mainly governed by hydrogen diffusion.     

Homogeneous chemical vapor deposition of amorphous semiconductor thin films

In this paper we discuss the properties of amorphous hydrogenated silicon and germanium films prepared by homogeneous chemical vapor deposition. Emphasis is placed upon the important differences between HOMOCVD and plasma-deposited films. Experiments and calculations are presented which illustrate the most important reactor dynamical parameters.     

Plasma enhanced chemical vapor deposition of ZnO thin films

Zinc oxide thin films were deposited on silicon and corning-7059 glass substrates by plasma enhanced chemical vapor deposition at different substrate temperatures ranging from 36 to 400 °C and with different gas flow rates. Diethylzinc as the source precursor, H₂O as oxidizer and argon as carrier gas were used for the preparation of ZnO films. Structural and optical properties of these films were investigated using X-ray diffraction, reflection high energy electron diffraction, atomic force microscopy and photoluminescence. Highly oriented films with (0 0 2) preferred planes were obtained on silicon kept at 300 °C with 50 ml/min flow rate of diethylzinc without any post annealing. Reflection high energy electron diffraction pattern also showed the crystalline nature of these films. A textured surface with rms roughness ∼28 nm was observed by atomic force microscopy for the films deposited at 300 °C. A sharp peak at 380 nm in the PL spectra indicated the UV band-edge emission.     

A nanoindentation study of thick cBN films prepared by chemical vapor deposition

The mechanical properties of high-quality cubic boron nitride (cBN) films were systematically investigated by nanoindentation measurements performed in both cross-sectional and plan-view directions. The large film thickness (∼5 μm) allows the effective ruling out of both substrate and indenter size effects. The hardness and elastic modulus values were found to be 70 and 800 GPa, respectively, which are the highest values ever obtained on cBN films deposited by either PVD or CVD methods so far (comparable to those reported for cBN crystals synthesized by high-pressure high-temperature methods). The variation of hardness across the cBN film thickness was investigated. In conjunction with the transmission electron microscopic observations, the relationship of the hardness measured with the crystallinity and crystal size/grain boundaries was discussed.     

Paramagnetic defects in diamond films synthesized by the hot filament chemical vapour deposition

Defects in nitrogen‐doped diamond films, produced by hot filament chemical vapour deposition have been studied by Electron Spin Resonance (ESR), Raman spectroscopy and Scanning Electron Microscopy (SEM). The peak‐to‐peak ESR line width (ΔH _pp) varies in the range 0.36‐0.52 mT and depends on the nitrogen concentration in the process gas. In the case of nitrogen‐doped diamond films ESR spectrum shows a hyperfine structure typical of N_S⁰ paramagnetic centre. The shape of the central ESR line shows that it is a superposition of two components: a narrower Lorentzian and a broader Gaussian one, characterized by different saturation behaviour. With increasing nitrogen concentration in process gas the ratio of integral intensities A _G/A _L (Gausian to Lorentzian) of ESR spectrum also increases. The Raman spectra show that with increasing doping level the diamond Raman line at 1332.5 cm^‐1 broadens, the broad band at about 1530 cm^‐1 becomes more pronounced what indicate on degradation of diamond crystallinity and it is in agreement with SEM observation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photocatalytic TiO2 films prepared by chemical vapor deposition at atmosphere pressure

Nanometer semiconductor titanium dioxide thin films have excellent properties of photocatalysitic degeneration. The glass coated TiO₂ films is called self-cleaning glass. In this paper, chemical vapor deposition (CVD) method is employed to deposit TiO₂ films on glass. The effect of spacing between nozzle and glass and the effect of substrate temperature on deposition rate are studied. The crystalline structure at different deposition temperatures is analyzed by XRD and anatase was found. And the microstructure of the TiO₂ films is also determined by SEM. It shows that the size of crystal grain increases with the temperature.     

Metalorganic chemical vapor deposition of mesoporous SiTiOC nanostructured thin films

SiTiOC mesoporous thin films have been obtained by metalorganic chemical vapor deposition (MOCVD) using titanium iso-propoxide (TIP) and tetraethylorthosilicate (TEOS) as starting precursors. The influences of both carrier gas and deposition temperature on the properties of the produced films were extensively studied. The low-angle XRD analysis confirms that, all produced films under different conditions (gas type and temperature) have the mesoporous structure. However, the deposition temperature was found to be much effective in controlling both morphology and composition of the final films than the type of carrier gas. The morphology of the produced films was totally converted from spherical shape-like nanoparticles at 700 °C to lengthy at higher temperature of 1000 °C. The SEM-EDX investigations proved that the composition of the produced films was composed of SiTiOC structure system. The PL analysis has demonstrated along with FT-IR data that all the deposited films at various deposition parameters were composed mainly of SiO₂, SiOC, SiC, TiO₂ and TiOC bond structures and most probably nanocomposite SiTiOC system thin films.     

Formation of needlelike crystallites during growth of diamond films by chemical vapor deposition

Diamond polycrystalline films have been grown by chemical vapor deposition from a hydrogenmethane mixture. The phase composition and structure of the films were studied using Raman spectroscopy, electron microscopy, and thermogravimetry. It is found that, upon heating in air, the oxidation of the carbon material forming the films occurs at significantly different temperatures, depending on the degree of its order and the crystallite size. This difference is used for selective oxidation of the least ordered fine-grained component of the films. The material obtained by this selective oxidation of the films consists of diamond crystallites shaped like regular micrometer-sized tetragonal pyramids with a radius of tip curvature of several nanometers.     

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

Smooth diamond films have been grown by hot filament chemical vapor deposition under DC bias on mirror-polished Si(100) substrates. Films of a few micrometers thickness were obtained in 30 min. The films were found to have d-spacing at 2.06 and 2.11 Å by X-ray diffraction. Raman spectra showed very broad peaks at 1329 (1336) and 1591 cm^-1. The films have a high density of planar defects and large internal stresses.     

Growth behavior of CuPc films by physical vapor deposition

Various Cu‐phthalocyanine (CuPc) films were grown from physical vapor deposition on top of indium‐tin‐oxide glass substrates by controlling substrate temperature (T_sub), source temperature (T_sou), and growth time. From side‐view SEM pictures, the growth rates for these CuPc films are estimated and can be categorized into three regions. From the Arrhenius plot of growth rate versus 1/T_sub, the activation energy E_A can be obtained. As T_sou = 390 °C, for region (A) with T_sub < 140 °C, the growth of CuPc films is dominated by the adhesion process with E_A = 810 meV. For region (B) with 140 °C < T_sub < 320 °C, the growth is then limited by the steric character associated with the organic molecular solids with E_A = 740 meV. For region (C) with T_sub > 320 °C, the re‐evaporation of the CuPc adhered molecules from the interface becomes dominant. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Noncatalytic synthesis of carbon nanotubes by chemical vapor deposition

A new method is proposed to obtain uniform arrays of multiwall carbon nanotubes without catalysts. Nanotubes have been formed by carbon condensation from a hydrogen-methane gas mixture activated by a dc discharge. Structural and morphological investigations of the obtained material were performed by Raman spectroscopy, scanning and transmission electron microscopy, energy-dispersive X-ray analysis, and electron energy loss spectroscopy. It is shown that the obtained nanotubes contain no impurities that could act as catalysts. Based on these experimental data, it is concluded that the nanotube synthesis under study is noncatalytic. Possible mechanisms of this synthesis are considered.     

Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

The nanocrystalline alpha silicon nitride (α-Si₃N₄) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH₄ and NH₃. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si₃N₄ nanoparticles increased, but the deposition rate decreased.     

Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition

Tungsten trioxide (WO₃) nanobelts in tetragonal structure were grown on Si substrates by a hot-wall chemical vapor deposition (CVD) method without using catalysts. The products were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectrum. The width of the nanobelts is in the range of 50–100 nm with width-to-thickness ratios of 5–10 and lengths of up to tens of micrometers. These nanobelts grew along the [0 0 1] direction and can be identified as the tetragonal WO₃ structures. Raman and PL measurements indicate the high quality of the nanobelts. The vapor–solid growth mechanism could be applicable in our experiment.     

Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

We have investigated the unintentional impurities, oxygen and carbon, in GaN films grown on c-plane, r-plane as well as m-plane sapphire by metal-organic chemical vapor deposition. The GaN layer was analyzed by secondary ion mass spectroscopy. The different trend of the incorporation of oxygen and carbon has been explained in the polar (0 0 0 1), nonpolar (1 1 2¯ 0) and semipolar (1 1 2¯ 2) GaN by a combination of the atom bonding structure and the origin direction of the impurities. Furthermore, it has been found that there is a stronger yellow luminescence (YL) in GaN with higher concentration of carbon, suggesting that C-involved defects are originally responsible for the YL.     

Mechanisms of chemical vapor deposition of silicon

The distribution in the silicon epitaxial growth from SiCl₄ and hydrogen are observed in situ by IR absorption spectroscopy. Two methods are used complementarily, one is IR spectroscopy of reactants extracted from the reactor by a fine quartz tube which is not disturbing the reactions, and gives knowledge about the local distribution, the other is direct IR spectroscopy of hot reactants in the reactor which is useful to ascertain the results at the real high temperature situation. The intermediate species are SiHCl₃, SiH₂Cl₂ which is estimated from the induced emission bands at 500 and 570 cm^-1. HCl is a dominant waste product and contributes to reverse reactions. To investigate the reaction, HCl is intentionally injected into the reacting gas. This kind of injection method may also be very effective to analyze the reactions using other reactants such as SiCl₄, SiHCl₃ and SiH₂Cl₂.