对双光束激光诱导沉积氧化锌膜的电镜测定

报道了采用双光束紫外激光辅助有机金属化学气相沉积（ＭＯＣＶＤ）技术获得氧化锌（ＺｎＯ）薄膜（厚度５０－２００ｎｍ）的电镜研究结果。反射高能电子衍射（ＲＨＥＥＤ）和扫描电子显微镜（ＳＥＭ）指出，采用该生长在较低生长温度下，在云母衬底上易生长出沿ｃ轴取向的单晶膜。在云母、单晶硅和玻璃衬底上都可得到表面结构致密而均匀的微晶或晶膜。在适当条件下在玻璃衬底上还可以得到非晶膜。这些膜层均具有较好的可见光诱过率     

Preparation of the In2O3·Sn Films by MO-CVD Technique

Introduction In₂O₃·Sn films have high transparency(>95％) within the visible spectral region, low resistivity(10^-2-10^-4 ohm·cm) at room temperature and superior thermal stability. These films have been applied to solar cells, electronics and photoelectronics fields. In recent years, organometallic-CVD method has emerged as a successful alternate to the physical methods and general CVDfor the growth of these films.     

Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Inorganic Oxide Films

Structural changes stimulated by ultraviolet (UV) laser irradiations of sol-gel derived inorganic oxide films were investigated. Dried gel films of TiO₂, Nb₂O₅, Ta₂O₅, SrTiO₃ and Pb(Zr _x Ti_1–x )O₃ (PZT) were found to be crystallized by the laser irradiation. On the other hand, the photo-induced change in gel films of BaTiO₃, LiNbO₃ and LiTaO₃ was not observed although the laser beams were absorbed in the films. These sol-gel films were thermally crystallized at almost the same temperature around 600–700°C except TiO₂. Thus, the UV-laser-induced crystallization is not directly ascribed to a simple thermal effect with the irradiation. Photochemical properties of the cations are assumed to be important for the change in sol-gel films.     

Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Indium Oxide Films

Modification of sol-gel derived indium oxide thin films using ultraviolet lasers was investigated. Irradiation by an ArF excimer (6.4 eV) and the fourth harmonic generation of a Nd : YAG laser (4.7 eV) was found to be effective in crystallization with a loss of hydroxyl groups and a decrease in the sheet resistance of the sol-gel films. Transparent crystalline indium oxide films were successfully obtained by 6.4 eV laser irradiation at fluences below 20 mJ/(cm2·shot), whereas degradation of the films was induced by a relatively high-fluence beam.     

Fabrication of a New Electrochemiluminescent Sensing Interface Based on Zinc Oxide Nanorod

A new electrochemiluminescence (ECL) sensing interface was established based on the zinc oxide nanorod in this paper. Firstly, the zinc oxide (ZnO) nanorod was prepared on an indium tin oxide (ITO) electrode surface by the method of constant current cathodic electrodeposition, on which the Nafion film was then modified, and finally ruthenium(II) tris(bipyridine) (Ru(bpy)₃²⁺) was immobilized at the ZnO nanorod/Nafion composite‐modified electrode. The sensing interface shows well ECL behaviors and perfect stability after being constant temperature treatment at 80 °C. The composite electrode was characterized by EIS, SEM and XRD. The results showed that the good stability maybe related to the water content of Nafion film.     

氧化铑变色薄膜的制备及其电变色研究

采用溶胶-凝胶方法制备了氧化铑电致变色薄膜。通过施加阴极或阳极电位, 薄膜在碱性电解液中呈现从亮黄（还原态）到深绿（氧化态）的可塑颜色变化,而 且可达到上千次循环而性能不变。采用XRD,SEM,TG,DTA,UVV,FTIR和循环伏安 等技术对薄膜的晶态、形貌、热处理过程和电变色过程进行了研究。得出100 ℃处 理的膜内含有一定量的结晶水,其性能最好。对薄膜的电致变色性能如：着色效率 、响应时间及循环寿命、开路记忆等进行了测试,并讨论了氧化铑薄膜电变色的反 应机理。     

Rectifying Properties of Oxide Semiconductor Heterostack Films at Elevated Temperatures

Heterostack films of p-type NiO and n-type TiO₂ semiconductors were deposited by a method of chemical solution deposition on a glass substrate having a sputtered ITO (In₂O₃ doped with Sn) electrode. Transparent films with total thickness of about 280 nm were obtained by heat treatments at 600°C. NiO reacted with TiO₂ to give a NiTiO₃ thin layer between them. The films exhibited a typical rectifying I-V behavior and this property was maintained at 300°C. The thickness of the NiTiO₃ intermediate layer increase with the heating time at 600°C and leading to a decrease of the current density at low voltage.     

纳米孔阵列阳极氧化铝膜的制备和表征

本文通过在0℃、0.5mol·L^-1的草酸溶液中阳极氧化高纯铝片的方法制得了阳极氧化铝(AAO)膜，并用扫描电子显微镜(SEM)和原子力显微镜(AFM)对AAO膜的形貌和结构进行了表征。结果表明，阻挡层AAO膜中大小一致的膜胞在铝/氧化铝界面上排成六方形阵列;有孔层AAO膜中含有高度有序的纳米孔阵列和膜胞阵列，并且孔的直径和膜胞的尺寸都具有较窄的分布。另外，考察了阳极氧化电压对膜胞尺寸、孔径大小、孔密度和膜胞密度的影响，表明在一定的电压范围内，膜胞和孔径都随电压的升高而增大，而孔密度和膜胞密度却随电压的升高而减小。     

脉冲激光沉积制备氧化铋薄膜的电致变色性质

通过电位阶跃和循环伏安结合现场电感偶合分光光度计(CCD)测量了脉冲激光沉积的四方结构Bi2O3薄膜的电致变色性质. 结果表明, 在波长为630 nm处出现一个明显的吸收峰, Bi2O3薄膜电极的着色时间为30 s. 吸光度-电位谱图表明, 当电位在3.5 - 0.7 V之间变化时, Bi2O3薄膜的颜色可明显地呈现由透明到暗棕色的可逆变化, 重复次数可达50 次, 在630 nm测得的着色效率约为15 cm2·C-1.     

Synthesis and Characterization of Macroporous Tungsten Oxide Films for Electrochromic Application

Macroporous tungsten oxide films have been prepared by combining a nonhydrolytic sol-gel method with a molecular assembly templating strategy. The material has been prepared by hydrolysis of an ethanolic solution of tungsten ethoxide in the presence of polyethylene glycol (PEG), followed by calcination of the dip-coated films. AFM images indicated that an important morphological diversity can be obtained by simply varying the amount of PEG in the coating solution and the conditions of the heat-treatment. The formation of nanostructures of controlled shapes and patterns (fibrils or striped phases) with relatively uniform channel spacings is accounted for by strong hydrogen bonding interactions between the PEG and the partially hydrolyzed tungsten oxide oligomers. XRD and FTIR data showed that PEG delays the crystallization of WO₃. When compared to sol-gel prepared tungsten oxide fims prepared without PEG, the coloration efficiency of the macroporous films appears to be significantly improved especially in the near-infrared region.     

Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp

Structural changes in sol-gel films with photo-irradiation were investigated using zinc oxide (ZnO) derived from zinc acetate. The exposure of the films to an ultraviolet lamp induced hexagonal ZnO crystals in a relatively dense amorphous structure. On the other hand, the formation of zinc metal was found in a porous gel film. The photo-induced crystallization and reduction are ascribed to the electronic excitation in the metastable non-crystalline states.     

BSA在不同形貌氧化锌材料上的吸附热力学

采用高分子模板法合成了4种不同形貌的ZnO,分别为球状颗粒(ZnO NPs)、针状(ZnO NRs)、片状(ZnO NSs)和棒状(ZnO NBs).利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)对产物进行了表征.通过傅里叶变换红外光谱仪(FTIR)和圆二色光谱仪(CD)研究了小牛血清白蛋白(BSA)在不同形貌ZnO上的等温吸附规律、吸附热力学和吸附作用机理.结果表明,4种不同形貌的ZnO对BSA的吸附均较好地符合Langmuir等温吸附模型;吸附量随温度的升高略有增加;从热力学参数(ΔG,ΔH,ΔS)可知,吸附反应为自发进行的吸热反应,作用机理主要为氢键和静电作用.从热力学角度,针状的ZnO更有利于BSA的吸附.     

Stress and Moisture-Sorption in Ozone-Annealed Films of Zirconium Oxide Obtained from Sol-Gel

The stress development in zirconium oxide films prepared by sol-gel and annealed under ozone-enriched oxygen has been investigated. The organic compounds are mostly oxidized at 200°C with ozone and the stress rises up to higher values than the stress in films annealed with pure oxygen between 200 to 400°C. During exposure to humid air of films annealed at 150°C under pure or ozone-enriched oxygen chemical transformations of organic compounds have been observed. The moisture-induced stress change during film exposure to the ambient air also has been investigated. The competition between hydration of ZrO₂, H-bound formation, surface ionization and capillary condensation mechanisms is discussed.     

化学气相沉积法制备ZnO纳米结构薄膜及其SERS活性研究

提供了半导体作为光、电和生物等功能材料的表面和界面信息, 同时也为SERS的研究开拓了新的领域.     

氧化锌薄膜/锡掺杂玻璃光波导元件及其对氯苯的气敏性研究

建立了玻璃光波导气敏元件检测氯苯气体的方法.采用浸渍-提拉法将ZnO敏感膜固定在锡掺杂玻璃光波导表面,研制出了检测氯苯气体的ZnO薄膜/锡掺杂玻璃光波导气敏元件,并用该玻璃光波导气敏元件对挥发性有机气体进行了检测.实验结果表明,在室温下,气敏元件对氯苯气体有明显的响应,而对相同浓度的其它挥发性有机气体的响应相对较小,对...     

金属有机化学气相沉积法制备ZnO和ZnO∶Ni薄膜及其特性分析

采用金属有机化学气相沉积法制备了ZnO和ZnO∶Ni薄膜,并对它们的结构、光学和电学特性进行了对比研究.通过扫描电子显微镜( SEM)和X射线衍射(XRD)对薄膜的表面形貌和晶体结构进行了分析,结果表明,Ni元素的掺杂虽然降低了薄膜的晶体质量,但并未改变ZnO的纤锌矿结构.通过紫外-可见分光光度计对薄膜的光学特性进行了...     

二步电沉积法制备Au/氧化石墨烯复合薄膜作为SERS基底

采用二步电沉积方法在Ti片表面制备了Au-氧化石墨烯（Au-GO）复合薄膜,通过XRD、SEM、XPS等对薄膜的组成、结构和形貌进行了表征,并以罗丹明6G（R6G）为探针分子,对Au-GO/Ti基底的SERS活性进行了表征。结果显示,Au纳米颗粒尺寸约为60 nm,均匀、致密分布于GO表面,该基底显示出较高的SERS活性,对R6G分子的检测极限可达~10^-10 mol·L^-1,增强因子高达约10⁶,且基底显示出良好的稳定性,在冰箱中存放90 d后,SERS活性仅降低30%左右。     

二步电沉积法制备Au/氧化石墨烯复合薄膜作为SERS基底

采用二步电沉积方法在Ti片表面制备了Au-氧化石墨烯（Au-GO）复合薄膜,通过XRD、SEM、XPS等对薄膜的组成、结构和形貌进行了表征,并以罗丹明6G（R6G）为探针分子,对Au-GO/Ti基底的SERS活性进行了表征。结果显示,Au纳米颗粒尺寸约为60 nm,均匀、致密分布于GO表面,该基底显示出较高的SERS活性,对R6G分子的检测极限可达~10^-10 mol·L^-1,增强因子高达约10⁶,且基底显示出良好的稳定性,在冰箱中存放90 d后,SERS活性仅降低30%左右。     

Comparative Studies on Degradation of Methyl Orange by Nanostructured Zinc and Zinc Oxide Films

Nanostructured zinc and zinc oxide films were prepared by magnetron sputtering processes and succeeded air annealing treatments. Comparison of reductive degradation rate of methyl orange (MO) by zinc films and photocatalytic degradation rate of MO by zinc oxide films was carried out. Both reductive degradation and photocatalytic degradation process of MO by zinc and zinc oxide films can be described by first order kinetic model. It was found that although MO liquid was most quickly decolorized by metallic zinc films, the mineraliza-tion of MO was not thorough. Observation of extra ultraviolet absorption peaks indicated the formation of aromatic intermediates. On the other hand, although the photocatalytic degradation rate of MO liquid by ZnO films was only as about 1/4 large as the reductive degradation rate by zinc films, no signs of aromatic intermediates were found. Moreover, it was found that partially oxidized zinc oxide film showed higher photocatalytic efficiency than the totally oxidized ZnO films. Synergy effect between zinc and zinc oxide phase in the partially oxidized films was considered to be responsible for the higher photocatalytic efficiency.     

Dual Manipulation of Ferromagnetism in Co-Doped ZnO Thin Films by Surfactant and n-Type Carriers

We present a conceptually-new approach “dual manipulation effect” using the surfactant passivation and the electron carrier doping for mediating intrinsic ferromagnetism in Codoped ZnO dilute magnetic semiconductor (DMS) thin films. The first-principles calculations show that the surface passivation by hydrogen serves as a magnetism switch for the Co-O-Co magnetic coupling at the surface of the thin film, and thus can control the spin polarization of the doped Co atoms. Meanwhile, the electron carrier doping can further function as an effective layerlike ferromagnetism mediator for the underneath layer. The dual manipulation effect sheds light on the essential magnetism origin of n-type Co:ZnO DMS thin films, and may be used as an alternative strategy for enhancing the ferromagnetism in other n-type DMS oxides thin films.