Organic light‐emitting devices having chemically‐doped arylamine oligomer as a hole injection layer

A soluble and thermally stable arylamine oligomer containing difluorenyl groups was prepared and applied to organic light‐emitting devices (OLEDs) as a hole injection layer. The oligomer layer was doped with a Lewis acid and formed by spin coating from the dichloroethane solution. The OLED with a structure of indium tin oxide (ITO)/Lewis‐acid‐doped arylamine oligomer/N,N′‐dinaphthyl‐N,N′‐diphenyl bendizine (α‐NPD)/tris(8‐quinolinolato)aluminum(III) (Alq₃)/LiF/Al showed lower drive voltages and higher power efficiencies, compared with the devices without the hole injection oligomer layer. Copyright © 2005 John Wiley & Sons, Ltd.     

Hole injection/transport materials derived from Heck and sol-gel chemistry for application in solution-processed organic electronic devices

An organosilicate polymer, based on N,N'-diphenyl-N,N'-bis(4-((E)-2-(triethoxysilyl)vinyl)phenyl)biphenyl-4,4'-diamine (TEVS-TPD) with extended conjugation between the Si atom and the aromatic amine, was prepared under mild conditions via sequential Heck and sol-gel chemistry and used as an alternative to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the most widely used planarizing hole injection/transport layer in solution-processed organic electronic devices. Spin-coating TEVS-TPD polymer solutions yield defect-free, uniform, thin films with excellent adhesion to the ITO electrode. Upon thermal cross-linking at 180 °C, the cross-linked polymer exhibits excellent solvent resistance and electrochemical stability. Solution-processed organic light emitting diode (OLED) devices using iridium-based triplet emitting layers and cross-linked TEVS-TPD films as a hole injection/transport layer show significantly improved performance including lower leakage current, lower turn-on voltage, higher luminance, and stability at high current density, as compared to the control device prepared with PEDOT:PSS.     

Hole‐buffer polymer composed of alternating p‐terphenyl and tetraethylene glycol ether moieties: Synthesis and application in polymer light‐emitting diodes

Carrier balance is essential to obtain efficient emission in polymer light‐emitting diodes (PLEDs). A new polymer 3P5O composed of alternating p‐terphenyl and tetraethylene glycol ether segments is designed and synthesized by the Suzuki coupling reaction and successfully employed as hole‐buffer layer to improve carrier balance. Multilayer PLEDs [ITO/PEDOT:PSS/ 3P5O /SY/LiF/Al], with Super Yellow (SY) as the emitting layer and 3P5O as the hole‐buffer layer, reveal maximum luminance (17,050 cd/m²) and maximum current efficiency (6.6 cd/A) superior to that without the hole‐buffer layer (10,017 cd/m², 3.0 cd/A). Moreover, it also shows better performance than that using conventional BCP as hole‐blocking layer [ITO/PEDOT:PSS/SY/BCP/LiF/Al (80 nm): 13,639 cd/m², 4.1 cd/A]. The performance enhancement has been attributed to hole‐buffering characteristics of 3P5O that results in improved carrier recombination ratio and wider carrier recombination region. Current results indicate that the 3P5O is a promising hole‐buffer polymer to enhance the performance of optoelectronic devices. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 785–794     

Organic light‐emitting device dark spot growth behavior analysis by diffusion reaction theory

Dark spot growth rate tracing experiments performed on an organic light‐emitting device show that moisture entering into the device is relatively properly fitted by Fick's diffusion equation in the substrate/indium tin oxide (ITO)/hole transport layer (HTL)/silver (Ag) structure. It is believed that the moisture is dissolved into the polymer layer, which results in a decrease in the diffusion coefficient in the device with the substrate/ITO/HTL/electroluminescent (EL) polymer/Ag structure. The diffusion and chemical reaction occurring in the cathode layer further decreases the diffusion coefficient in the device with the substrate/ITO/HTL/EL polymer/calcium/Ag structure. Useful parameters, such as diffusion and solubility constants, describing possible mechanisms happening during dark spot growth on organic light‐emitting diode devices are extracted. © 2001 John Wiley & Sons, Inc. J Polym Sci Part B: Polym Phys 39: 1697–1703, 2001     

Performance Improvement of Organic Light Emitting Diodes Using Poly(N-vinylcarbazole) (PVK) as a Blocking Layer

High efficiency organic light‐emitting‐devices (OLED) have been fabricated by incorporation of a polymeric layer as a controller of the unbalanced charge. In device configuration of ITO/PEDOT:PSS/PVK/Alq₃/LiF:Al, poly(N‐vinylcarbazole) (PVK) was selected as a block‐ing layer (BL) because it has a hole transporting property and a higher band gap, especially a lower LUMO level than the emitting layer (Alq₃) and a higher HOMO level than the hole injection layer (PEDOT: PSS). As a result, the optimal structure with this bl layer showed a peak efficiency of 6.89 cd/A and 2.30 lm/W compared to the device without the PVK layer of 1.08 cd/A, 0.27 lm/W. This result shows that the PVK layer could effec‐tively block the electrons from metal cathode and confine them in the emitting layer and accomplish the charge balance, which leads to enhanced hole‐electron balance for achieving high recombination efficiency.     

Degradation effects in polymer light emitting devices due to heat treatment

The characteristics of polymer light emitting diodes (PLEDs) (ITO/PPV/Ca) depend strongly on the conditions during preparation and operation. We studied the effects of heat treatment (during and after preparation) of PLEDs with OC₁C₁₀-PPV as active layer. PLEDs showed a reduction of both the current and the light output to 40 % after annealing for only 30 min at 65 °C. Effects on I-V characteristics were studied by measuring single carrier devices (hole- and electron-dominated devices). The current reduction after heat treatment can be ascribed to degradation of the ITO/PPV and the Ca/PPV interfaces.     

Electrical and optical simulations of a polymer‐based phosphorescent organic light‐emitting diode with high efficiency

A comprehensive numerical device simulation of the electrical and optical characteristics accompanied with experimental measurements of a new highly efficient system for polymer‐based light‐emitting diodes doped with phosphorescent dyes is presented. The system under investigation comprises an electron transporter attached to a polymer backbone blended with an electronically inert small molecule and an iridium‐based green phosphorescent dye which serves as both emitter and hole transporter. The device simulation combines an electrical and an optical model. Based on the known highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels of all components as well as the measured electrical and optical characteristics of the devices, we model the emissive layer as an effective medium using the dye's HOMO as hole transport level and the polymer LUMO as electron transport level. By fine‐tuning the injection barriers at the electron and hole‐injecting contact, respectively, in simulated devices, unipolar device characteristics were fitted to the experimental data. Simulations using the so‐obtained set of parameters yielded very good agreement to the measured current–voltage, luminance–voltage characteristics, and the emission profile of entire bipolar light‐emitting diodes, without additional fitting parameters. The simulation was used to gain insight into the physical processes and the mechanisms governing the efficiency of the organic light‐emitting diode, including the position and extent of the recombination zone, carrier concentration profiles, and field distribution inside the device. The simulations show that the device is severely limited by hole injection, and that a reduction of the hole‐injection barrier would improve the device efficiency by almost 50%. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

Effects of Supporting Electrolytes on Spectroelectrochemical and Electrochromic Properties of Polyaniline‐poly(styrene sulfonic acid) and Poly(ethylenedioxythiophene)‐poly(styrene sulfonic acid)‐based Electrochromic Device

Electrochromic devices are fabricated by using polyaniline (PANI) doped with poly(styrene sulfonic acid) (PSS) as coloring electrodes, poly(ethylenedioxythiophene)‐poly(styrene sulfonic acid) (PEDOT‐PSS) as complementary electrodes, and hybrid polymer electrolytes as gel electrolytes. The device based on LiClO₄‐based electrolyte (weight ratio of PMMA:PC:LiClO₄ = 0.7:1.1:0.3) shows the highest optical contrast and coloration efficiency (333 cm²/C) after 1200 cycles in these devices, and the color changes from pale yellow (?0.5 V) to dark blue (+2.5 V). The spectroelectrochemical and electrochromic switching properties of electrochromic devices are investigated, the maximum optical contrast (ΔT%) of electrochromic device for ITO|PANI‐PSS‖PMMA‐PC‐LiClO₄‐SiO₂‖PEDOT‐PSS|ITO are 31.5% at 640 nm, and electrochromic device based on LiClO₄‐based electrolyte with SiO₂ shows faster response time than that based on LiClO₄‐based electrolyte without SiO₂.     

Application of CdSe–PVK Nanocomposite as a Hole Transport Layer for OLEDs

An organic light‐emitting diode was fabricated using cadmium selenide (CdSe)/poly(N‐vinylcarbazole) nanocomposite as the hole transport layer (HTL). The CdSe nanoparticles (NPs) with a mean crystallite size of 6.2 nm were prepared by high‐energy ball milling. Based on the current–voltage curves, the threshold voltage (V _th) of the composite diode was found to be ~1.3 ± 0.1 V lower than that of the diode without CdSe, with a significant increase in the current density for the composite diode. Moreover, the electroluminescence (EL) properties (luminous flux, emittance, and intensity) of the diode were found to be enhanced by ~16% with respect to those of the diode without CdSe. The decrease of the threshold voltage and the increase of the current density and the EL were due to the CdSe NPs that operate as hole trap centers in the HTL.     

Thermally crosslinkable hole‐transporting poly(fluorene‐co‐triphenylamine) for multilayer polymer light‐emitting diodes

This article reports the synthesis and characterization of a novel thermally crosslinkable hole‐transporting poly (fluorene‐co‐triphenylamine) (PFO‐TPA) by Suzuki coupling reaction, followed with its application in the fabrication of multilayer light‐emitting diodes by wet processes. The thermal, photophysical, and electrochemical properties of PFO‐TPA were investigated by differential scanning calorimeter, thermogravimetric analysis, optical spectroscopy, and cyclic voltammetry, respectively. Thermally crosslinked PFO‐TPA, through pendant styryl groups, demonstrates excellent thermal stability (T_d > 400 °C, T_g = 152 °C), solvent resistance, and film homogeneity. Its highest occupied molecular orbital level (?5.30 eV) lies between those of PEDOT:PSS (?5.0 ～ ?5.2 eV) and poly(9,9‐dioctylfluorene) (PFO: ?5.70 eV), forming a stepwise energy ladder to facilitate hole injection. Multilayer device with crosslinked PFO‐TPA as hole‐injection layer (HIL) (ITO/PEDOT:PSS/HIL/PFO/LiF/Ca/Al) was readily fabricated by successive spin‐coating processes, its maximum luminance efficiency (3.16 cd/A) were about six times higher than those without PFO‐TPA layer (0.50 cd/A). The result of hole‐only device also confirmed hole‐injection and hole‐transport abilities of crosslinked PFO‐TPA layer. Consequently, the device performance enhancement is attributed to more balanced charges injection in the presence of crosslinked PFO‐TPA layer. The thermally crosslinkable PFO‐TPA is a promising material for the fabrication of efficient multilayer polymer light‐emitting diodes because it is not only a hole‐transporting polymer but also thermally crosslinkable. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

叔丁基联苯基苯基噁二唑作空穴限制层的掺杂聚合物蓝光发光二极管

叔丁基联苯基苯基噁二唑作空穴限制层的掺杂聚合物蓝光发光二极管马於光,吴军,薛善华,黄劲松,田文晶,刘式墉,沈家骢,刘晓冬（吉林大学分子光谱与分子结构开放实验室,集成光电子学国家重点实验室,长春,１３００２３）（白求恩医科大学基础部）关键词聚合物,发光...     

Novel Efficient Light-Emitting Polyfluorene Derivatives Modified by Electron-Deficient Moieties with Nonlinear Structure

Two novel fluorene-based copolymers (PFSD and PFMD) containing squaric acid or maleimide unit in the main chain were synthesized in good yields by Suzuki coupling reaction. The resulting polymers possess excellent thermal stability, high electron affinity and high photolurninescence (PL) quantum yields. They can fluoresce in yellow-light range due to either the charge transfer between a fluorene segment and an electron-deficient containing squaric acid/maleimide segment of the polymers or the Forrster energy transfer between different polymer chains.The results from PL measurements of the isothermally heated polymer thin films show that the commonly observed aggregate excimer formation in polyfluorenes is very effectively suppressed in these two polymers due to the nonlinear structures of maleimide and squaric acid moieties. Double-layer polymer light-emitting diodes (PLED) were fabricated using the resulting polymers as the emitting layers and Ba or Mg：Ag(V：V=10：1) as cathodes.All the devices show bright yellow emission (562-579nm) with different maximum external quantum efficiencies (0.006%-1.13%). Compared with the other devices, indium-tin oxide (ITO)/polyethylenedioxythiophene (PEDOT):polystyrene sulfonic acid (PSS)/PFMD/Mg:Ag has the higher maximum external quantum efficiency of 1.13% at 564cd/m^2 with a bias of 8.4V.     

Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes

We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF₃SO₃H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A^?1, 80.7 lm W^?1) than those with conventional ITO (84.8 cd A^?1, 73.8 lm W^?1).     

Current–voltage and capacitance–voltage characteristics of the ITO/polyaniline doped boron trifloride/Al Schottky diode

The electrical characteristics of the ITO/polyaniline (PANI) doped boron trifloride (BF₃)/Al Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) methods. The diode indicates a rectification behavior with the ideality factor of 4.78. An ideality factor higher than unity can result from the interface state and electronic properties of the PANI doped BF₃ organic semiconductor. The barrier height of the diode was determined from both I–V and C–V characteristics. The barrier height obtained from the C–V measurements is higher than that obtained from the I–V measurements. At higher forward bias voltages, the space charge‐limited current is the dominant transport mechanism, whereas at reverse bias voltages, the current flow in the ITO/PANIBF₃/Al diode is controlled by Schottky emission mechanism. Copyright © 2008 John Wiley & Sons, Ltd.     

Organic light‐emitting diodes with multiple photocrosslinkable hole‐transport layers

We report on photocrosslinkable hole‐transport polymers and their use as photodefinable hole‐transport layers in organic light‐emitting diodes. The polymers were obtained by copolymerization of bis(diarylamino)biphenyl‐based acrylate monomers with cinnamate‐functionalized acrylate moieties. Polymers with a range of redox potentials were obtained by varying the substitution patterns of the bis(diarylamino)biphenyl units. The 2 + 2 cycloaddition of the cinnamate moieties following UV irradiation renders the material insoluble. This allows for patterning of the polymer and simultaneously enables the fabrication of multilayer structures from solution. Hole mobilities were measured in these copolymers with the time‐of‐flight technique. Their performance as hole‐transport layers in light‐emitting diodes, with tris(8‐hydroxyquinolinato)aluminum as the emitter and electron‐transport layer, is evaluated. Electroluminescent devices with multiple hole‐transport layers having different ionization potentials were fabricated from solution, and the quantum efficiency of these devices was greater than that for devices based on a single hole‐transport layer. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2726–2732, 2003     

Synthesis and electroluminescent properties of naphthalimide derivatives

Naphthalimide derivatives, N-ethyl-4-acetylamino-l ,8-naphthalimide (EAAN) and polymer with N-propyl-4-acetylamino-l,8-naphthalimide (PAAN) side-chain (P-PAAN) were successfully synthesized. Electroluminescent devices of ITO/PVK(120nm)/EAAN(50nm)/Al(150nm) (Ⅰ) and ITO/PVK P-PAAN( 10:1) (50nm)/Al(150nm) (Ⅱ) constructed with EAAN and P-PAAN as the emitting layer were investigated, whereas the single-layer devices of ITO/EAAN or P-PAAN(50nm)/Al(l50nm) (Ⅲ) were not observed to have any e-mission light. The emission results revealed that the exciton recombination formed by positive and negative charge carriers injected from electrodes of devices Ⅰ and Ⅱ was much more balanced than that of devices Ⅲ, which implied that naphthalimide derivatives are a new type of electron-transporting materials with high performance. The electron-transporting properties of naphthalimide derivatives were also elucidated by investigation of the electroluminescent behaviors from both devices of ITO/PPV (80nm)/Al and ITO/P     

Fluorene‐based alternating polymers containing electron‐withdrawing bithiazole units: Preparation and device applications

We report here the synthesis via Suzuki polymerization of two novel alternating polymers containing 9,9‐dioctylfluorene and electron‐withdrawing 4,4′‐dihexyl‐2,2′‐bithiazole moieties, poly[(4,4′‐dihexyl‐2,2′‐bithiazole‐5,5′‐diyl)‐alt‐(9,9‐dioctylfluorene‐2,7‐diyl)] (PHBTzF) and poly[(5,5′‐bis(2″‐thienyl)‐4,4′‐dihexyl‐2,2′‐bithiazole‐5″,5″‐diyl)‐alt‐(9,9‐dioctylfluorene‐2,7‐diyl)] (PTHBTzTF), and their application to electronic devices. The ultraviolet–visible absorption maxima of films of PHBTzF and PTHBTzTF were 413 and 471 nm, respectively, and the photoluminescence maxima were 513 and 590 nm, respectively. Cyclic voltammetry experiment showed an improvement in the n‐doping stability of the polymers and a reduction of their lowest unoccupied molecular orbital energy levels as a result of bithiazole in the polymers' main chain. The highest occupied molecular orbital energy levels of the polymers were ?5.85 eV for PHBTzF and ?5.53 eV for PTHBTzTF. Conventional polymeric light‐emitting‐diode devices were fabricated in the ITO/PEDOT:PSS/polymer/Ca/Al configuration [where ITO is indium tin oxide and PEDOT:PSS is poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonic acid)] with the two polymers as emitting layers. The PHBTzF device exhibited a maximum luminance of 210 cd/m² and a turn‐on voltage of 9.4 V, whereas the PTHBTzTF device exhibited a maximum luminance of 1840 cd/m² and a turn‐on voltage of 5.4 V. In addition, a preliminary organic solar‐cell device with the ITO/PEDOT:PSS/(PTHBTzTF + C₆₀)/Ca/Al configuration (where C₆₀ is fullerene) was also fabricated. Under 100 mW/cm² of air mass 1.5 white‐light illumination, the device produced an open‐circuit voltage of 0.76 V and a short‐circuit current of 1.70 mA/cm². The fill factor of the device was 0.40, and the power conversion efficiency was 0.52%. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 1845–1857, 2005     

Efficient blue‐green‐emitting poly[(5‐diphenylamino‐1,3‐phenylenevinylene)‐alt‐(2,5‐dihexyloxy‐1,4‐phenylenevinylene)] derivatives: Synthesis and optical properties

New poly(phenylene vinylene) derivatives with a 5‐diphenylamino‐1,3‐phenylene linkage (including polymers 2 , 3 , and 5 ) have been synthesized to improve the charge‐injection properties. These polymers are highly photoluminescent with fluorescent quantum yields as high as 76% in tetrahydrofuran solutions. With effective π‐conjugation interruption at adjacent m‐phenylene units, chromophores of different conjugation lengths can be incorporated into the polymer chain in a controllable manner. In polymer 2 , the structural regularity leads to an isolated, well‐defined emitting chromophore. Isomeric polymer 3 of a random chain sequence, however, allows the effective emitting chromophores to be joined in sequence by sharing a common m‐phenylene linkage (as shown in a molecular fragment). Double‐layer light‐emitting‐diode devices using 2 , 3 , and 5 as emitting layers have turn‐on voltages of about 3.5 V and produce blue‐green emissions with peaks at 493, 492, and 482 nm and external quantum efficiencies up to 1.42, 0.98, and 1.53%, respectively. In comparison with a light‐emitting diode using 2 , a device using 3 shows improved charge injection and displays increased brightness by a factor of ～3 to 1400 cd/m² at an 8‐V bias. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2307–2315, 2006     

Synthesis of new polyfluorene copolymers with a comonomer containing triphenylamine units and their applications in white‐light‐emitting diodes

Novel conjugated polyfluorene copolymers, poly[9,9‐dihexylfluorene‐2,7‐diyl‐co‐(2,5‐bis(4′‐diphenylaminostyryl)‐phenylene‐1,4‐diyl)]s (PGs), have been synthesized by nickel(0)‐mediated polymerization from 2,7‐dibromo‐9,9‐dihexylfluorene and 1,4′‐dibromo‐2,5‐bis(4‐diphenylaminostyryl)benzene with various molar ratios of the monomers. Because of the incorporation of triphenylamine (TPA) moieties, PGs exhibit much higher HOMO levels than the corresponding polyfluorene homopolymers and are able to facilitate hole injection into the polymer layer from the anode electrode in light‐emitting diodes. Conventional polymeric light‐emitting devices with the configuration ITO/PEDOT:PSS/polymer/Ca/Al have been fabricated. A light‐emitting device produced with one of the PG copolymers (PG10) as the emitting layer exhibited a voltage‐independent and stable bluish‐green emission with color coordinates of (0.22, 0.42) at 5 V. The maximum brightness and current efficiency of the PG10 device were 3370 cd/m² (at 9.6 V) and 0.6 cd/A, respectively. To realize a white polymeric light‐emitting diode, PG10 as the host material was blended with 1.0 wt % of a red‐light‐emitting polymer, poly[9,9‐dioctylfluorene‐2,7‐diyl‐alt‐2,5‐bis(2‐thienyl‐2‐cyanovinyl)‐1‐(2′‐ethylhexyloxy)‐4‐methoxybenzene‐5′,5′‐diyl] (PFR4‐S), and poly[2‐methoxy‐5‐(2′‐ethylhexyloxy)‐1,4‐phenylenevinylene] (MEH‐PPV). The device based on PG10:PFR4‐S showed an almost perfect pure white electroluminescence emission, with Commission Internationale de l'Eclairage (CIE) coordinates of (0.33, 0.36) at 8 V; for the PG10:MEH‐PPV device, the CIE coordinates at this voltage were (0.30, 0.40) with a maximum brightness of 1930 cd/m². Moreover, the white‐light emission from the PG10:PFR4‐S device was stable even at different driving voltages and had CIE coordinates of (0.34, 0.36) at 6 V and (0.31, 0.35) at 10 V. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1199–1209, 2007     

Advanced surface modification of indium tin oxide for improved charge injection in organic devices

A new method is described for surface modification of ITO with an electroactive organic monolayer. This procedure was done to enhance hole injection in an electronic device and involves sequential formation of a monolayer of a pi-conjugated organic semiconductor on the indium tin oxide (ITO) surface followed by doping with a strong electron acceptor. The semiconductor monolayer is covalently bound to the ITO, which ensures strong adhesion and interface stability; reduction of the hole injection barrier in these devices is accomplished by formation of a charge-transfer complex by doping within the monolayer. This gives rise to very high current densities in simple single layer devices and double layer light emitting devices compared to those with untreated ITO anodes.