Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε’ > 10⁴) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε’ continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε’ value of approximately 7.55 × 10⁴ and an extremely low tanδ value of approximately 0.007 at 10³ Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu³⁺/Nb⁵⁺ co-doped TiO₂ (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε’ values between the temperatures of −60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO₆ microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti³⁺ ions formed by Nb⁵⁺ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.     

Significantly Improved Colossal Dielectric Properties and Maxwell—Wagner Relaxation of TiO2—Rich Na1/2Y1/2Cu3Ti4+xO12 Ceramics

In this work, the colossal dielectric properties and Maxwell—Wagner relaxation of TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ (x = 0–0.2) ceramics prepared by a solid-state reaction method are investigated. A single phase of Na_1/2Y_1/2Cu₃Ti₄O₁₂ is achieved without the detection of any impurity phase. The highly dense microstructure is obtained, and the mean grain size is significantly reduced by a factor of 10 by increasing Ti molar ratio, resulting in an increased grain boundary density and hence grain boundary resistance (R_gb). The colossal permittivities of ε′ ~ 0.7–1.4 × 10⁴ with slightly dependent on frequency in the frequency range of 10²–10⁶ Hz are obtained in the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics, while the dielectric loss tangent is reduced to tanδ ~ 0.016–0.020 at 1 kHz due to the increased R_gb. The semiconducting grain resistance (R_g) of the Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics increases with increasing x, corresponding to the decrease in Cu⁺/Cu²⁺ ratio. The nonlinear electrical properties of the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics can also be improved. The colossal dielectric and nonlinear electrical properties of the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics are explained by the Maxwell–Wagner relaxation model based on the formation of the Schottky barrier at the grain boundary.     

Influences of Sr2+ Doping on Microstructure,Giant Dielectric Behavior,and Non-Ohmic Properties of CaCu3Ti4O12/CaTiO3 Ceramic Composites

The microstructure, dielectric response, and nonlinear current-voltage properties of Sr²⁺-doped CaCu₃Ti₄O₁₂/CaTiO₃ (CCTO/CTO) ceramic composites, which were prepared by a solid-state reaction method using a single step from the starting nominal composition of CCTO/CTO/xSrO, were investigated. The CCTO and CTO phases were detected in the X-ray diffraction patterns. The lattice parameter increased with increasing Sr²⁺ doping concentration. The phase compositions of CCTO and CTO were confirmed by energy-dispersive X-ray spectroscopy with elemental mapping in the sintered ceramics. It can be confirmed that most of the Sr²⁺ ions substituted into the CTO phase, while some minor portion substituted into the CCTO phase. Furthermore, small segregation of Cu-rich was observed along the grain boundaries. The dielectric permittivity of the CCTO/CTO composite slightly decreased by doping with Sr²⁺, while the loss tangent was greatly reduced. Furthermore, the dielectric properties in a high-temperature range of the Sr²⁺-doped CCTO/CTO ceramic composites can be improved. Interestingly, the nonlinear electrical properties of the Sr²⁺-doped CCTO/CTO ceramic composites were significantly enhanced. The improved dielectric and nonlinear electrical properties of the Sr²⁺-doped CCTO/CTO ceramic composites were explained by the enhancement of the electrical properties of the internal interfaces.     

Atomic Simulations of Aurivillius Oxides: Bi3TiNbO9, Bi4Ti3O12, BaBi4Ti4O15 and Ba2Bi4Ti5O18 Doped with Pb,Al, Ga,In, Ta

The Aurivillius oxides were originally of interest for their ferroelectric properties and have recently been explored in the field of oxide ion conductivity. Atomistic simulation methods have been carried out for Bi₃TiNbO₉, Bi₄Ti₃O₁₂, BaBi₄Ti₄O₁₅ and Ba₂Bi₄Ti₅O₁₈ doped with Pb, Al, Ga, In, Ta to determine defect energy in the materials by employing efficient energy minimization procedures. The calculations rest upon the specification of an interatomic potential model, which expresses the total energy of the system as a function of the nuclear coordinates. The Born model framework, which partitions the total energy into long‐range Coulombic interactions and a short‐range term to model the repulsions and van der Waals forces between electron charge clouds, is employed. This is embodied in the GULP simulation code. Dopant solution energy versus ion size trends are found for both isovalent and aliovalent dopant incorporation at Bi and Ta sites. Trivalent dopants (Al, Ga, In) and Pb are more favorable on the Bi site, whereas Ta dopants preferentially occupy the Ti site.