Significantly Improved Colossal Dielectric Properties and Maxwell—Wagner Relaxation of TiO2—Rich Na1/2Y1/2Cu3Ti4+xO12 Ceramics

In this work, the colossal dielectric properties and Maxwell—Wagner relaxation of TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ (x = 0–0.2) ceramics prepared by a solid-state reaction method are investigated. A single phase of Na_1/2Y_1/2Cu₃Ti₄O₁₂ is achieved without the detection of any impurity phase. The highly dense microstructure is obtained, and the mean grain size is significantly reduced by a factor of 10 by increasing Ti molar ratio, resulting in an increased grain boundary density and hence grain boundary resistance (R_gb). The colossal permittivities of ε′ ~ 0.7–1.4 × 10⁴ with slightly dependent on frequency in the frequency range of 10²–10⁶ Hz are obtained in the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics, while the dielectric loss tangent is reduced to tanδ ~ 0.016–0.020 at 1 kHz due to the increased R_gb. The semiconducting grain resistance (R_g) of the Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics increases with increasing x, corresponding to the decrease in Cu⁺/Cu²⁺ ratio. The nonlinear electrical properties of the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics can also be improved. The colossal dielectric and nonlinear electrical properties of the TiO₂–rich Na_1/2Y_1/2Cu₃Ti_4+xO₁₂ ceramics are explained by the Maxwell–Wagner relaxation model based on the formation of the Schottky barrier at the grain boundary.     

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε’ > 10⁴) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε’ continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε’ value of approximately 7.55 × 10⁴ and an extremely low tanδ value of approximately 0.007 at 10³ Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu³⁺/Nb⁵⁺ co-doped TiO₂ (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε’ values between the temperatures of −60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO₆ microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti³⁺ ions formed by Nb⁵⁺ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.     

Effect of phase purity on dielectric properties of CaCu3+xTi4O12 ceramics

Different amounts of CuO are used to synthesize CaCu_3+xTi₄O₁₂ (CC_xTO, −1 ≤ x ≤ 1) powders in this work. In order to investigate the effects of Cu constituent on the componential, morphological, and dielectric properties, 975 °C is selected as the sintering temperature to prepare the ceramic pellets with different x values from −0.2 to 0.2. They basically keep the same component and morphology despite the different Cu constituents in the ceramics. Cu component has complex effects on their dielectric properties, whose changes are not linear with the Cu increase. However, the CC_0.2TO ceramic sample has the most frequency-independent dielectric constant and the lowest dielectric loss.     

Microstructure and dielectric properties of Nd doped CaCu3Ti4O12 synthesized by sol–gel method

Ca_(1?3x/2)Nd _x Cu₃Ti₄O₁₂ (x = 0, 0.1, 0.2 and 0.3) powders and ceramics were prepared by sol–gel method. Effect of Nd on microstructure and dielectric properties were investigated. XRD patterns suggest that pure perovskite-like CCTO phase were obtained after calcining at 800 °C for 2 h. SEM pictures reveal that particle size monotonously decreases from 250 to 120 nm with increase of Nd concentration. The lattice parameters show an increasing trend with the enhancing amount of Nd³⁺ substitution. The average grain size of CCTO ceramics decrease from 2.0 to 0.8 μm with increase in Nd doping, which indicates that high concentration of Nd inhibits grain growth of CaCu₃Ti₄O₁₂. Both of the dielectric constant and dielectric loss decrease with increase in Nd concentrations. Ca_(1?3x/2)Nd _x Cu₃Ti₄O₁₂ ceramics with x = 0.3 shows the lowest dielectric constant of 1.12 × 10⁴ as well as the lowest dielectric loss value of 0.12 at 20 °C(10 kHz).     

Effect of the addition of B2O3 and BaO-B2O3-SiO2 glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu3Ti4O12

The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics was investigated. Both single-component (B₂O₃) and multi-component (30 wt% BaO-60 wt% B₂O₃-10 wt% SiO₂ (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B₂O₃ glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B₂O₃ content resulted in its segregation at the grain boundaries associated with a reduction in the grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples.     

Dielectric properties of chemically co-precipitated tetragonal Pb(Mg1/3Nb2/3)0.65Ti0.35O3

Pyrochlore phase free Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃ ceramics have been synthesized successfully by chemical co-precipitation method. It has been noted that formation of perovskite phase Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃ without pyrochlore phase is tricky. The synthesized samples at optimized parameters were characterized using X-ray diffraction technique. Careful analysis of the XRD data predicts the tetragonal lattice structure. The morphological studies depict the presence of uniform grain size. Dielectric constant (ε′) and loss tangent (tan δ), at and well above room temperature, were studied. The variation of dielectric constant with temperature shows sharp peak at ferroelectric–paraelectric transition temperature. Further, the temperature dependent dielectric constant shows good fit with modified Curie–Weiss law, which suggests normal ferroelectric behavior of Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃.     

Central role of TiO2 anatase grain boundaries on resistivity of CaCu3Ti4O12-based materials probed by Raman spectroscopy

This study focuses on characterization and control of grain boundaries to enhance the properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics capacitors for industrial applications. A novel factor deals with TiO₂ anatase revealed by Raman scattering in grain boundaries, found as a dominant parameter of largest sample resistivity, consistent with higher grain boundary resistivity and higher breakdown voltage. Four selected samples of CCTO-based compositions showing very different properties in terms of permittivity ranging from 1000 to 684 000 measured at 1 kHz, capacitance of grain boundaries ranging from 8 10⁻¹⁰ to 4.5 10⁻⁷ F cm⁻¹, grain boundary resistivity ranging from 193 to 30,000,000 Ω cm and sample resistivity extending from 450 to 10¹¹ Ω cm. The relationship between permittivity weighted by grain size and capacitance of grain boundaries confirms the internal barrier layer capacitance model over 5 orders of magnitude.     

Magnetische Eigenschaften von Ti3−xMxO5-Phasen (M = V3+, Cr3+, Nb4+)

Magnetic Properties of Ti_3?xM_xO₅ Phases (M = V³⁺, Cr³⁺, Nb⁴⁺) The magnetic properties of Ti_3?xV_xO₅, Ti_3?xCr_xO₅, and Ti_3?xNb_xO₅ phases are reported. In the case of V³⁺ and Cr³⁺ the magnetic leaping-temperature decreases, however Nb⁴⁺ shift the phase-transition towards higher temperatures. All samples show a “memory-effect” in magnetic properties, i. e. the results of heating- and cooling-cycles are higher susceptibilities of the α-phase of Ti₃O₅. Endowed Ti₃O₅ phases show for the α- and β-Ti_3?xM_xO₅ til the leap Curie-Weiss characteristic in 1/X vs. temperature measurements. Exception is β-Ti_3?xNb_xO₅, its susceptibility is independend of the temperature up to x ? 0.3.     

Synthesis, structure and electrical properties of Cu3.21Ti1.16Nb2.63O12 and the CuOx-TiO2-Nb2O5 pseudoternary phase diagram

Subsolidus phase relations in the CuO_x-TiO₂-Nb₂O₅ system were determined at 935 °C. The phase diagram contains one new phase, Cu_3.21Ti_1.16Nb_2.63O₁₂ (CTNO) and one rutile-structured solid solution series, Ti_1−3xCu_xNb_2xO₂: 0<x<0.2335 (35). The crystal structure of CTNO is similar to that of CaCu₃Ti₄O₁₂ (CCTO) with square planar Cu²⁺ but with A site vacancies and a disordered mixture of Cu⁺, Ti⁴⁺ and Nb⁵⁺ on the octahedral sites. It is a modest semiconductor with relative permittivity ∼63 and displays non-Arrhenius conductivity behavior that is essentially temperature-independent at the lowest temperatures.     

Synthesis of nanopowders of pentoxides Ta2y Nb2(1−y)O5

The processes of production of high purity nanopowders of niobium and tantalum pentoxide Ta_2y Nb_2(1–y)O₅ with a low content of fluorine and Nb₂O₅ in low-temperature polymorph were studied. Ceramic samples were prepared from a charge of solid solutions LiTa _y Nb_1–y O₃ and Li _x Na_1–x Ta _y Nb_1–y O₃ synthesized using coprecipitated pentoxide Ta_2y Nb_2(1–y)O₅. Therewith for solid solutions LixNa_1–x Ta _y Nb_1–y O₃ significantly larger values of high dielectric constant and ionic conductivity were achieved compared to the solid solutions obtained by using a mechanical mixture of Ta₂O₅ and Nb₂O₅. This converts solid solutions LixNa_1–x Ta _y Nb_1–y O₃ from acoustoelectronic and piezoelectric type of materials into the capacitor and ion-conductive type of solid materials.     

Influences of Sr2+ Doping on Microstructure,Giant Dielectric Behavior,and Non-Ohmic Properties of CaCu3Ti4O12/CaTiO3 Ceramic Composites

The microstructure, dielectric response, and nonlinear current-voltage properties of Sr²⁺-doped CaCu₃Ti₄O₁₂/CaTiO₃ (CCTO/CTO) ceramic composites, which were prepared by a solid-state reaction method using a single step from the starting nominal composition of CCTO/CTO/xSrO, were investigated. The CCTO and CTO phases were detected in the X-ray diffraction patterns. The lattice parameter increased with increasing Sr²⁺ doping concentration. The phase compositions of CCTO and CTO were confirmed by energy-dispersive X-ray spectroscopy with elemental mapping in the sintered ceramics. It can be confirmed that most of the Sr²⁺ ions substituted into the CTO phase, while some minor portion substituted into the CCTO phase. Furthermore, small segregation of Cu-rich was observed along the grain boundaries. The dielectric permittivity of the CCTO/CTO composite slightly decreased by doping with Sr²⁺, while the loss tangent was greatly reduced. Furthermore, the dielectric properties in a high-temperature range of the Sr²⁺-doped CCTO/CTO ceramic composites can be improved. Interestingly, the nonlinear electrical properties of the Sr²⁺-doped CCTO/CTO ceramic composites were significantly enhanced. The improved dielectric and nonlinear electrical properties of the Sr²⁺-doped CCTO/CTO ceramic composites were explained by the enhancement of the electrical properties of the internal interfaces.     

Luminescence in some tantalate host lattices

The luminescence of the following systems are reported: ScTa_1−xNb_xO₄, Li₃Ta_1−xNb_xO₄, CaTa_2−2xNb_2xO₆ and Mg₄Ta_2−2xNb_2xO₉. The dependence of the luminescence properties on x becomes more pronounced if the distance between the pentavalent ions becomes shorter. In these systems the NbO₆ group gives an efficient blue emission at 300°K. The compound Mg₄Ta₂O₉ gives an efficient ultraviolet emission at 300°K. At 77°K both Mg₄Nb₂O₉ and Mg₄Ta₂O₉ show in addition a weaker emission peaking at wavelengths longer than the wavelength of the room temperature emission. This low-temperature emission can be excited by radiation with wavelengths longer than that of the absorption edge. The Mn²⁺ ion in Mg₄Ta₂O₉Mn acts as an efficient activator with a deep-red emission.     

Size-induced diffuse behavior in Pb0.89La0.11Zr0.40Ti0.60O3 nanocrystalline ferroelectric ceramics

The Pb_1−xLa_xZr_yTi_1−yO₃ system is a perovskite ABO₃ structured material which presents ferroelectric properties and has been used as capacitors, actuators, transducers and electro-optic devices. In this paper, we describe the synthesis and the characterization of Pb_0.89La_0.11Zr_0.40Ti_0.60O₃ (PLZT11) nanostructured material. The precursor polymeric method and the spark plasma sintering technique were respectively used to prepare ceramic samples. In order to compare the effect of grain size, microcrystalline PLZT11 ceramic samples were also prepared. PLZT11 samples were characterized by X-ray diffraction technique which results show a reduction on the degree of tetragonality as the average grain size decreases. Moreover, the grain size decrease to a nanometer range induces a diffuse behavior on the dielectric permittivity curves as a function of the temperature and a reduction on the dielectric permittivity magnitude. Furthermore, the large number of grain boundaries due to the nanometer size gives rise to a dielectric anomaly.     

CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>-Based materials with variable copper content

The CaO-3 (1 + x)CuO-4TiO₂ system was studied using powder X-ray diffraction in the concentration region near calcium copper titanate. A single-phase material is formed in this system only when x ～ 0. An excess or deficit of copper gives rise to extra phases: CuO or CaTiO₃ and TiO₂, respectively. Impurities increase the dielectric constant of CaCu₃Ti₄O₁₂-based ceramics. An excess of copper oxide (x ～ 0.08) increases ? more than tenfold.     

Dielectric Properties of Colossal-Dielectric-Constant Na1/2La1/2Cu3Ti4O12 Ceramics Prepared by Spark Plasma Sintering

In the current study, we report on the dielectric behavior of colossal-dielectric-constant Na_1/2La_1/2Cu₃Ti₄O₁₂ (NLCTO) ceramics prepared by mechanochemical synthesis and spark plasma sintering (SPS) at 850 °C, 900 °C, and 925 °C for 10 min. X-ray powder diffraction analysis showed that all the ceramics have a cubic phase. Scanning electron microscope observations revealed an increase in the average grain size from 175 to 300 nm with an increase in the sintering temperature. SPS NLCTO ceramics showed a room-temperature colossal dielectric constant (>10³) and a comparatively high dielectric loss (>0.1) over most of the studied frequency range (1 Hz–40 MHz). Two relaxation peaks were observed in the spectra of the electrical modulus and attributed to the response of grain and grain boundary. According to the Nyquist plots of complex impedance, the SPS NLCTO ceramics have semiconductor grains surrounded by electrically resistive grain boundaries. The colossal dielectric constant of SPS NLCTO ceramics was attributed to the internal barrier layer capacitance (IBLC) effect. The high dielectric loss is thought to be due to the low resistivity of the grain boundary of SPS NLCTO.     

Dielectric behavior and impedance analysis of lead-free CuO doped (Na0.50K0.50)0.95(Li0.05Sb0.05Nb0.95)O3 ceramics

Pure (Na_0.50K_0.50)_0.95(Li_0.05Sb_0.05Nb_0.95)O₃ (NKNLS) and CuO doped NKNLS perovskite structured ferroelectric ceramics were prepared by the solid-state reaction method. x wt% of CuO (x = 0.2–0.8 wt%) was added in the NKNLS ceramics. X-ray diffraction patterns indicate that single phase was formed for pure NKNLS while a small amount of second phase (K₆Li₄Nb₁₀O₃₀ ∼ 3%) was present in Cu²⁺ doped NKNLS ceramics. Dielectric anomalies around the temperatures of 120 °C and 350 °C have been identified as the ferroelectric–paraelectric transition (orthorhombic to tetragonal and tetragonal to cubic) temperatures for pure NKNLS compound. The electrical behavior of the ceramics was studied by impedance study in the high temperature range. Impedance analysis has shown the grain and grain boundary contribution using an equivalent circuit model. The impedance response in pure and Cu²⁺ doped NKNLS ceramics could be resolved into two contributions, associated with the bulk (∼grains) and the grain boundaries. From the conductivity studies, it is found that activation energies are strongly frequency dependent. The activation energy obtained from dielectric relaxation data may be attributed to oxygen ion vacancies.     

Capacitance scaling of grain boundaries with colossal permittivity of CaCu3Ti4O12-based materials

Samples of copper-deficient CaCu₃Ti₄O₁₂ (CCTO) compared to the nominal composition, all synthesized via organic gel-assisted citrate process, show huge change of grain boundaries capacitance as deduced from a fit of an RC element model to the impedance spectroscopic data. The grain boundary capacitance is found to scale with the permittivity measured at 1 kHz weighted by the size of the grains. This result is found consistent with the internal barrier layer capacitance (IBLC) model.     

Die Phasen Nb3Ga2, Ta5Ga3 und Ta5Al3Bx

Zusammenfassung Die Phasen Nb₃Ga₂, Ta₅Ga₃ und Ta₅Al₃B_x werden aus den Komponenten hergestellt. Nb₃Ga₂ kristallisiert im U₃Si₂-Typ, Ta₅Ga₃ hat Cr₅Br₃-Struktur (T 2) und Ta₅Al₃B_x ist mit Mn₅Si₃ (teilweise aufgefüllt) isotyp.     

Phase constitution,structure analysis and microwave dielectric properties of Zn0.5Ti1−xZrxNbO4 ceramics

The phase constitution and phase structure of Zn_0.5Ti_1−xZr_xNbO₄ ceramics were analyzed by multiphase structure refinement. The diffraction patterns of Zn_0.5Ti_1−xZr_xNbO₄ showed that the ixiolite phase ZnTiNb₂O₈ and rutile phase Zn_0.15Nb_0.30Ti_0.55O₂ were obtained. The distortion of oxygen octahedron, bond valence of Ti-site and volume of oxygen octahedron were calculated. For the main phase ZnTiNb₂O₈, with substitution of Zr⁴⁺ for Ti⁴⁺, the distortion of oxygen octahedron and the bond valence of Ti-site increased. The increase of Ti-site bond valence led to a harder rattling of Ti cations of the specimens. As a result, the contribution of the rattling effect to the polarizabilities of the specimens decreased, and subsequently the dielectric constant decreased. With increasing fraction of Zn_0.15Nb_0.30Ti_0.55O₂, the Qf value decreased. The decrease of τ_f was mainly attributed to the increase of Ti-site bond valence. With the Ti-site bond valence increasing, the bonding strength between oxygen ion and Ti⁴⁺ ion became stronger, and the dilution of the average ionic polarizability decreased.     

Chemical solution deposited silver tantalate niobate, Ag x (Ta0.5Nb0.5)O3? y , thin films on (111)Pt/Ti/SiO2/(100)Si substrates

Silver tantalate niobate films are candidates for temperature stable microwave dielectrics. In this work, a chemical solution deposition synthesis method was developed for Ag _x (Ta_0.5Nb_0.5)O_3−y films on Pt-coated Si substrates. Stable solutions with a range of silver stoichiometries were prepared using 2-methoxyethanol and pyridine as solvents, from AgNO₃ and Nb and Ta ethoxide precursors. It was extremely difficult to prepare phase-pure perovskite films of Ag(Ta_0.5Nb_0.5)O₃ on Pt-coated Si subtrates; instead a mixture of perovskite and natrotantite phases was identified. Such mixed phase films had dielectric constant ɛ _r and dielectric loss tanδ values ranging from 200±20 to 270±25 and 0.006±0.002 to 0.002±0.001 at 100 kHz, respectively, depending on the firing temperature. For Ag₂(Ta_0.5Nb_0.5)₄O₁₁, Ag_0.8(Ta_0.5Nb_0.5)O_2.9, Ag_0.85(Ta_0.5Nb_0.5)O_2.925 and Ag_0.9(Ta_0.5Nb_0.5)O_2.95 films, mainly the natrotantite phase was observed. The ɛ _r values of these films were between 70±10 and 130±15 with tan δ values of 0.008±0.002 at 100 kHz.