数码照相法测量离子交换平面光波导损耗特性

利用数码相机对离子交换平面玻璃光波导传输线进行数字成像,根据传输线上的光强分布拟合出光强传输衰减曲线,计算出波导的传输损耗.对光波导进行退火处理,研究了波导退火前后的传输损耗特性.退火后0阶模式下传输损耗由2.148 9 dB·cm-1降为0.746 0 dB·cm-1.结果表明,波导的传输损耗是随着模阶数的增加而递增,适当的退火处理明显改善了离子交换波导的质量.     

K-Na离子交换单模平面波导的制备及其表征

通过K-Na离子交换技术制备了多模玻璃平面波导.采用棱镜耦合技术测量了波导的有效折射率,用IWKB方法拟合得到K-Na离子交换波导的折射率分布符合高斯分布,由色散曲线得到单模波导的制备条件(即扩散深度范围),从而得出单模波导的离子交换时间范围,制备出单模波导,并通过求解WKB色散方程得出单模波导的表面折射率.用普通数码相机,通过对离子交换平面玻璃光波导传输线进行数字成像,根据传输线上的光强分布拟合出光强传输衰减曲线,计算出单模波导的传输损耗大约为0.4 dB/cm.     

光通信中的玻璃无源器件的制备与研究

本文报道了以高质量的BK7光学玻璃为衬底,通过稀释Ag+-Na+离子交换技术,制备出低损耗的表面条波导,并用近场法测量出条波导的模场分布曲线。给出光纤与波导耦合的失配损耗为0.54dB,条波导传输损耗为0.21dB/cm.以及在此工作基础上,成功地研制了适用于大容量相于光通信系统的1×2和1×4单模波导分束器。     

后处理对离子交换磷酸盐玻璃平面光波导的影响

研究了退火和二次离子交换对Er3+/Yb3+共掺的磷酸盐玻璃平面光波导传输特性的影响。在退火过程中，由于热效应和波导层Ag+离子的浓度差使得Ag+离子重新分布；随着退火时间的延长和温度的升高，光波导模式数目逐渐增加，波导层深度加深，且波导表面折射率与玻璃基质折射率差减小，退火扩散深度与退火时间的平方根成正比。电子探针结果显示在二次离子交换后形成了掩埋式的光波导，Ag+离子浓度接近二次方分布，而掩埋式的光波导有助于降低光波导的传输损耗。     

焦磷酸质子交换LiTaO3光波导

本文首次报道了在低于300℃的焦磷酸中制备质子交换LiTaO_3光波导的方法。通过测量有效扩散系数D给出D_0=3.91×10~6μm~2/h和激活能E_a=0.74eV;并测量了波导参数。实验结果表明:只有非寻常折射率产生增量△n_6,其中TM单模波导的传输损耗低达0.1dB/cm(633mm)。发现,热退火处理后的波导表面非寻常折射率增大了。     

掩埋型离子交换玻璃光波导的变分分析

用变分法对离子交换法制备的掺铒光波导的传播特性进行了分析,推导出了适用于掩埋型离子交换玻璃沟道光波导中场分布传播常量的变分表达式,构建了场分布的厄米-高斯型试探解,在两种不同实验条件下,采用变分法确定了试探解中的待定参量,获得光波导中的场分布,利用传播常量的变分公式和已确定的场分布计算得到了传播常量和有效折射率。计算数据表明:导波区域的有效折射率稍稍地大于限制层的折射率,说明离子交换法制备的波导器件是弱波导;高的辅助退火电场强度和适当的退火时间下,所制备的光波导可以支持更多光模式的传输。该方法计算过程简洁、快速,计算结果与实验结果吻合。     

用于光互连的聚硅氧烷波导弯曲损耗

研究了用于光互连的聚硅氧烷多模光波导直接弯曲时弯曲损耗与圆弧曲率半径的关系。用Marcuse的直波导近似法理论计算了其弯曲损耗,理论计算表明弯曲损耗随模阶数的增加而变大,随半径的减少而变大;光在波导中传输时,总弯曲损耗出现阶跃式变化,并且曲率半径大于4 mm时,波导的弯曲损耗小于1dB/cm。用BeamPROP仿真软件仿真了5、10、20mm三种曲率半径下的传输光场情况。利用数字化散射法测量了其弯曲损耗,实验结果显示曲率半径在5～6mm时弯曲损耗值在0.55～0.8dB/cm之间,考虑所制备的聚硅氧烷直波导固有的传输损耗,实验值与理论值基本相符。     

二维光子晶体平行多波导的传输光谱研究

采用时域有限差分法研究二维光子晶体两平行直波导以及三平行直波导的传输特性。计算结果表明,两平行波导在不同的频率范围内表现出不同的耦合特性：在高频段两波导表现出相互的能量交换,实现光耦合,而在低频段传输谱图重合,各波导传输光强均为入射光强的二分之一;对于三波导系统,发现在不同的频率范围内主波导与两耦合波导之间也表现出不同的耦合特性：在高频段两耦合波导与主波导实现光耦合,而在低频段两耦合波导与主波导的传输谱图同步变化,耦合波导的传输光强均约为入射光强的四分之一。     

多孔硅通道型光波导的制备及传输损耗的测量

利用多孔硅在阳极腐蚀过程中外加的光照度与孔隙率的对应关系,提出了一种利用光照控制多孔硅折射率的方法制备通道型光波导技术.对制备出的多孔硅波导损耗进行了分析.由于多孔硅波导层中孔状结使得波导端面较为粗糙,耦合损耗大是多孔硅光波导传输损耗测量中遇到的的问题,对此采用了一种非破坏性的简便的优化端面耦合传输损耗测量方法,可以实现入射光束与波导的完全耦合,消除了因光波与波导中导波模式间失配引起的损耗.较精确的测量出实验中制备的通道型多孔硅光波导的传输损耗为16.2dBcm,波导端面的散射损耗为3.6dB.     

耐热硅树脂材料的光学特性研究

遴先出了具有200℃高耐热性的硅树脂,根据185 nm到104 nm波段的透射谱,发现材料在300 nm到3000 nm范围内无吸收峰.用Manificier方法,推算出了600 nm到1600 nm波段上的光学常量,650 nm和1550 nm波长的折射率分别为1.513和1.498（温度为26℃时）;对薄膜进行紫外曝光后,相应的折射率减小到1.512和1.489.用激光－V棱镜装置检测出该材料无偏振特性,根据薄膜材料的表面形貌图均方高差和传输损耗分析,波导散射损耗约为0.5 dB/cm.研究结果表明,这种硅树脂可用于制作光通信系统中的波导器件,特别是塑料光纤通信网络中的波导器件.     

Polymer waveguides from alicyclic methacrylate copolymer fabricated by deep-UV exposure

We have investigated the fabrication of waveguides from alicyclic methacrylate copolymer based on refractive-index modification by deep-UV exposure. By optimizing the UV-exposure process, we were able to obtain single-mode waveguides with a propagation loss of 0.8 dB/cm at 1550 nm, which is due only to material losses in this wavelength range. The loss obtained here is comparable with that of poly(methyl methacrylate) (PMMA) waveguides fabricated by deep-UV exposure. The fabricated waveguide is also single mode at 808 nm, and its propagation loss is 0.6 dB/cm. This alicyclic methacrylate copolymer is a promising material for the fabrication of polymer waveguides by use of deep-UV exposure.     

Femtosecond laser micromachined optical waveguides in LiTaO3 crystal

By using femtosecond laser micromachining, optical wave guides in both depressed cladding and dual‐line configurations have been produced in LiTaO₃ crystal. The guiding properties and the thermal stability have been investigated for both geometries, which exhibit different performance. Depressed cladding waveguides support guidance along both extraordinary and ordinary index polarizations, while dual‐line waveguides support only extraordinary index polarization. Thermal annealing has been proved to be an effective method to reduce the propagation losses. For the cladding waveguide, the lowest propagation loss was as low as 0.38 dB/cm after the annealing treatment at 400 °C. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Analysis and optimization of propagation losses in LiNbO3 optical waveguides produced by swift heavy-ion irradiation

The propagation losses (PL) of lithium niobate optical planar waveguides fabricated by swift heavy-ion irradiation (SHI), an alternative to conventional ion implantation, have been investigated and optimized. For waveguide fabrication, congruently melting LiNbO₃ substrates were irradiated with F ions at 20 MeV or 30 MeV and fluences in the range 10¹³–10¹⁴ cm⁻². The influence of the temperature and time of post-irradiation annealing treatments has been systematically studied. Optimum propagation losses lower than 0.5 dB/cm have been obtained for both TE and TM modes, after a two-stage annealing treatment at 350 and 375^∘C. Possible loss mechanisms are discussed.     

Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO₂ upper cladding and a 5.0μm SiO₂ lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.     

Single-mode SiON/SiO2/Si optical waveguides prepared by plasma-enhanced chemical vapor deposition

We present the characteristics of low-propagation-loss single-mode SiON / SiO₂ / Si planar optical waveguides using plasma-enhanced chemical vapor deposition (PECVD). Using a thermal annealing process and a thick silicon dioxide buffer layer, we get an improvement on the propagation loss by the amounts of 1.24 dB /cm and 1.1 dB /cm, respectively. Optical waveguides with propagation loss lower than 0.3 dB /cm can be achieved.     

Thermal optimization and erasing of Nd:YAG proton beam written waveguides

We report on how the optical and structural properties of Nd:YAG proton beam written waveguides are modified when they experienced annealing treatments from 50 °C to 950 °C. The microstructural changes caused in the vicinity of the nuclear damage region were found to be stable up to 700 °C, so that higher annealing temperatures lead to a complete waveguide erasing. Before this "erasing" temperature, the partial thermal-induced defect recombination reduces the propagation losses, reaching its minimum value (below 1 dB/cm) after a 400 °C thermal annealing.     

Stress in femtosecond-laser-written waveguides in fused silica

We identify two states of stress induced in waveguides fabricated by femtosecond lasers in fused silica and show how they can be relieved by annealing. In-plane stress and stress concentration are revealed through birefringence and loss measurements. Another kind of laser-induced stress appears in the form of swelling of the glass surface when waveguides are written near the surface and is a manifestation of confined rapid material quenching. By annealing the sample we reduce the losses by approximately 30% (at 633 nm) and decrease the birefringence by a factor of 4 in fused silica.     

A waveguide amplifier based on a counterdirectional coupler

The propagation of continuous-wave radiation in tunnel-coupled waveguides, one of which is characterized by a negative refraction and linear losses while the other is made of an ordinary dielectric and represents a linear amplifier, is analyzed theoretically. We found that, in the case of linear waveguides, the losses can be compensated at certain values of the pump-wave amplitude depending on values of the gain and loss coefficients in the corresponding waveguides, resulting in the amplification of radiation at the output of the waveguide with the negative refraction. The Kerr nonlinearity of the amplifying waveguide prevents the compensation of losses due to the violation of the phase-matching condition between the coupled waves in a counterdirectional coupler.     

银纳米线表面等离激元波导的能量损耗

金属纳米结构的表面等离激元可以突破光学衍射极限,为光子器件的微型化和集成光学芯片的实现奠定基础.基于表面等离激元的各种基本光学元件已经研制出来.然而,由于金属结构的固有欧姆损耗以及向衬底的辐射损耗等,表面等离激元的传输能量损耗较大,极大地制约了其在纳米光子器件和回路中的应用.研究能量损耗的影响因素以及如何有效降低能量损耗对未来光子器件的实际应用具有重要意义.本文从纳米线表面等离激元的基本模式出发,介绍了它在不同条件下的场分布和传输特性,在此基础上着重讨论纳米线表面等离激元传输损耗的影响因素和测量方法以及目前常用的降低传输损耗的思路.最后给出总结以及如何进一步降低能量损耗方法的展望.表面等离激元能量损耗的相关研究对于纳米光子器件的设计和集成光子回路的构建有着重要作用.