Surface morphology of MgO (100) crystals implanted with MeV Al+ and Al2+ ions

MgO (100) single crystals are implanted with 1.50-MeV Al⁺ and 3.00-MeV Al₂ ⁺ ions at a fluence of 1×10¹⁵ Al  atoms  cm^-2 under high-vacuum conditions. The surface morphology of the substrate is measured in air using atomic force microscopy and X-ray reflectometry followed by computer-simulated spectrum analysis. The ion-irradiated areas are found to protrude to different heights on the nanometre scale. Small height differences are observed in the areas irradiated by Al⁺ and Al₂ ⁺ ions of comparable energy, dose rate and total fluence. The results indicate that protrusions are most likely caused by implantation-induced point defects (vacancies) generated in the crystal during implantation. Other possibilities for the cause of protrusions are discussed. Thermal treatment stimulates a partial recovery of the implantation damage and alters the topography of MgO surfaces. Received: 22 May 2001 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Atomic force microscopy of photochemistry and the Baeyer–Villiger reaction of 4,4′-dimethylbenzophenone in the solid state

Nanostructures are formed by photodimerization of crystalline 4,4^′-dimethylbenzophenone (1) through intermolecular hydrogen abstraction and Baeyer–Villiger reaction of 1 with m-chloroperoxybenzoic acid (MCPBA) (5) in the solid state. Atomic force microscopy (AFM) reveals that the crystal face (001) of 1 during photodimerization exhibits volcanoes, whereas the same face (001) of 1 yields both craters and volcanoes all over the surface from the contact edge of the crystals during the Baeyer–Villiger reaction. All the experimental results are correlated with the bulk crystal structure. Molecular interpretation of the AFM features of 1 is given. Received: 18 April 2000 / Revised version: 26 July 2000; accepted: 27 July 2000 / Published online: 30 November 2000     

High-power diode-end-pumped Nd:YVO4 laser: thermally induced fracture versus pump-wavelength sensitivity

We report two kinds of compact and efficient diode-end-pumped TEM₀₀ lasers with output power >25 W at ≈50 W of incident pump power. One laser consists of a single 0.3 at. % Nd:YVO₄ crystal in a V-type cavity, the other laser includes two 0.5 at. % Nd:YVO₄ crystals in a linear cavity. Experimental results show that lowering Nd³⁺ concentration can be beneficial in extending the fracture-limited pump power but it also increases the sensitivity of the pump wavelength due to the overlapping efficiency. Received: 19 February 2000 / Revised version: 30 May 2000 / Published online: 20 September 2000     

Direct patterning of gold oxide thin films by focused ion-beam irradiation

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar⁺ laser beam and a 30 keV Ga⁺ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10–100 μm) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x (130–150 °C). For smaller dimensions (100 nm to 10 μm) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6–7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5×10⁷ Ω/□ to approximately 6 Ω/□). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) investigations, indicate that the FIB patterning in the low-dose region (10¹⁴ Ga⁺/cm²) is combined with a volume reduction, which is caused by oxygen escape rather than by sputtering. Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 13 July 2000     

Comparative investigation of spectroscopic and laser emission characteristics under direct 885-nm pump of concentrated Nd:YAG ceramics and crystals

A high-resolution spectroscopic and emission-decay investigation of highly concentrated Nd:YAG single crystals and ceramics shows that the state of the Nd³⁺ ions and their interaction in these materials are similar and can be used for construction of efficient solid-state lasers directly pumped in the emitting level. This possibility is demonstrated by continuous-wave emission of concentrated Nd:YAG crystals with up to 3.5 at. % Nd and ceramics with up to 6.8 at. % Nd under resonant 885-nm end pump. Received: 28 May 2001 / Final version: 17 August 2001 / Published online: 10 October 2001     

The optical properties of Yb3+ ions in LiTaO3:Nd,Yb crystals

3+ ions excited by energy transfer from Nd³⁺ ions in LiTaO₃:Nd, Yb crystals are presented. The emission band of Yb³⁺ ions is broad, due to the strong phonon-coupling and to the relative large Stark-splitting of the ground ²F_7/2 multiplet. The emission cross-section was evaluated by the reciprocity method, and a value of 0.53×10^-20 cm² was obtained. The gain coefficients derived for the inversion parameters in the range 0.05 to 0.5 indicate positive gain in the 985–1070 nm range. Received: 17 March 1997/Revised version: 10 June 1997     

Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 μm

Laser oscillation around 1.6 μm was realised at room temperature for low-doped Er:YVO₄ crystals (0.5 at % and 1 at %) as well as for Er(1 at %), Yb(5 at %):YVO₄ crystal in continuous-wave mode. The maximum slope of the input–output curve was about 19% (vs. absorbed power) for Er(0.5 at %):YVO₄. The laser oscillation was discretely tunable in the spectral range between 1531 and 1604 nm. Received: 24. August 2000 / Published online: 8 November 2000     

Ultrashort-pulse laser ablation of indium phosphide in air

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φ_th(1)=0.16 J/cm². The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 23 August 2000     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Comparison of gold and silver dispersion laws suitable for FDTD simulations

We report optical planar waveguide formation and modal characterization in β-BaB₂O₄ crystals by Cu²⁺-ion implantation at an energy of 3.0 MeV and doses of ∼ 10¹⁴ ions/cm². The prism-coupling method was used to investigate the dark-mode property at wavelengths of 633 nm and 1539 nm. The refractive-index profile of the waveguide was reconstructed by an effective refractive index method. The modal analysis indicates that the fields of TM modes can be well restricted in the guiding region, which means the formation of a non-leaky waveguide in the crystal. The results show that the β-BaB₂O₄ waveguides may be used in the application of high efficiency frequency conversion. PACS 61.80.Jh; 42.70.Mp; 42.65.Wi     

Photorefractive properties of LiNbO3:Zn crystals related to the defect structure

LiNbO₃:Zn single crystals and powders were studied by precise X-ray diffraction methods. Structural refinement yielded new models of the intrinsic defect structure valid for different Zn concentration ranges. For concentrations up to 7 at. % in the crystal, Zn ions incorporate onto Li sites; at higher concentrations Zn ions are found on both Li and Nb sites. Photorefractive properties of LiNbO₃:Zn are discussed in the context of the deduced defect models. A smooth increase in the photoconductivity up to 7 at. % Zn is accounted for by a decrease of Nb antisites. Steeper growth of the photoconductivity at higher Zn concentrations is related to vanishing Li vacancies. Received: 17 November 2000 / Revised version: 23 January 2001 / Published online: 20 April 2001     

Structural and optical characterization of Er3+/Yb3+-doped LiNbO3

We report the dependence of the unit-cell parameters and the extraordinary and ordinary refractive indices of Er³⁺/Yb³⁺-codoped LiNbO₃ crystals. Both properties depend in a non-monotonic manner on the Er³⁺/Yb³⁺ content. A singularity was observed at concentrations of 1.1-1.2 mol. % in the crystal (0.6-0.7 mol. % in the melt). In the same way the Er and Yb concentration influences the periodically poled lithium niobate formation. The observed behavior of refractive indices and unit-cell parameters of Er³⁺/Yb³⁺-codoped LiNbO₃ crystals could be explained in terms of the RE³⁺-ion concentration affecting the Li-vacancy concentration and the RE³⁺-ion positions in the crystal. Received: 21 May 2001 / Revised version: 22 August 2001 / Published online: 23 October 2001     

Chemical, morphological and accumulation phenomena in ultrashort-pulse laser ablation of TiN in air

Ultrashort-pulse laser ablation (τ=130 fs, λ=800 nm, repetition rate 2–20 Hz) of titanium nitride was investigated for laser fluences between 0.3 and 4.5 J/cm² using the direct focusing technique in air. The influence of the laser pulse number and the peak fluence was investigated by means of several surface analytical techniques (optical microscopy, dynamic friction atomic force microscopy, scanning Auger electron microscopy and small-spot electron spectroscopy for chemical analysis). The correlation of the results about optical, physical and chemical properties of the irradiated areas allows us to propose a simple oxidation model, which explains different observed phenomena associated with surface damage such as mound formation and crater widening and clarifies the incubation behavior reported earlier for this material. Received: 8 May 2000 / Accepted: 9 May 2000 / Published online: 13 September 2000     

Raman study on vapor-phase equilibrated Er:LiNbO3 and Er:Ti:LiNbO3 crystals

Raman spectra of Er:LiNbO₃ crystal and Ti-diffusedEr:LiNbO₃ strip waveguide, in which the Li/Nb ratio was altered using a vapor-phase equilibration (VPE) technique, were measured at room temperature in the wave-number range 50–3500 cm^-1. Both 488 and 514.5 nm radiations were used to excite Raman scattering, A₁(TO) and E(TO) modes were recorded at backward scattering geometry. The results indicated that the lattice vibrational spectra of the as-grown Er:LiNbO₃ are almost the same as those of pure LiNbO₃ except for the little shift of the peak position and the change of relative intensity of some peaks. In comparison with the spectra of as-grown Er:LiNbO₃ crystal the vapor-phase equilibrated Er:LiNbO₃ and Er:Ti:LiNbO₃ crystals in the lattice vibrational region exhibit the following features: firstly, Raman peaks become narrow, indicating that the VPE process has brought Er:LiNbO₃ and Er:Ti:LiNbO₃ crystals closer to a stoichiometric composition; secondly, relative intensity of some peaks varies with the VPE time; and finally, slight blue shifting in peak position was observed. Some of these features were correlated with the NbO₆ octahedra and with the site distribution of the doped Er ions. In addition, green fluorescence peaks and/or bands associated with the electron transitions ² H _11/2?⁴ I _15/2 and ⁴ S _3/2?⁴ I _15/2 of the doped Er³⁺ were also observed. For 488 nm excitation they appear in the wavenumber range of 1200–3000 cm^-1 and are well separated from lattice vibrational region; for 514.5 nm excitation, however, these fluorescence peaks shift towards the low wavenumber region and overlap partially with the lattice vibrational spectra. Received: 24 May 2000 / Accepted: 29 May 2000 / Published online: 13 September 2000     

Temperature distribution and thermal-induced defects in photorefractive barium titanate crystals illuminated with intense cw or pulsed laser irradiations

The temperature distribution in a parallelepipedic crystal irradiated with a Gaussian repartition of light is calculated by solving the three-dimensional heat equation and taking into account the losses through the sides of the samples. The theoretical and experimental maps of temperature are satisfactorily compared. For barium titanate crystals, the resistance to intense cw laser (25.7 kW/mm² at 514.5 nm) and to Nd:YAG pulsed laser (peak power of 9.2 MW at 532 nm) is investigated. The defects induced by the irradiation are analysed. Under pulsed illumination, the damage threshold is found to be 0.54 GW/cm² in a nominally undoped BaTiO₃ and 0.44 GW/cm² in a rhodium-cobalt doped BaTiO₃ crystal. Received: 7 March 2000 / Revised version: 14 April 2000 / Published online: 16 August 2000     

EUV and fast ion emission from cryogenic liquid jet target laser-generated plasma

A liquid jet of either nitrogen or argon of 20 μm diameter was exposed to intense laser fields with pulse durations between 70 fs and 250 ps, leading to intensities of 10¹⁶ W cm^-2 and 10¹³ W cm^-2, respectively. The emission of extreme UV light and soft X-rays shows the characteristic lines of hydrogen-like nitrogen and carbon-like argon. For nitrogen the emitted photon flux at 250 ps was about two orders of magnitude higher than for 70 fs pulses. A weak dependence on the laser polarization with respect to the liquid jet axis was found. The kinetic energy of the emitted ions easily exceeded 100 keV for nitrogen and 200 keV for argon for a pulse duration close to 2 ps. Received: 21 August 2000 / Revised version: 20 December 2000 / Published online: 22 March 2001     

Nano hillock and complex crater formation by low-energy proton implantation with incident angle into lithium niobate single crystal

The formation of nano-size hillocks and simple and complex craters was observed as a result of ion–surface collisions with a lithium niobate single crystal on proton implantation. The low-energy ion implantation process is considered as a controllable and versatile tool for surface and near-surface modifications down to an atomic scale as an alternative to the swift heavy ion irradiation effect. Lithium niobate samples implanted by proton ions with a low energy of 120 keV at various fluences (10¹⁵ and 10¹⁶ protons/cm²) were studied using atomic force microscopy (AFM). The images of surface modification appear as simple and complex crater formation in the case of incident ions at normal to the surface. Varying the angle of incidence to θ=30° with respect to the normal to the surface, hillocks and multi-hillocks were observed. The complex craters with central uplifted, cone-shaped hillocks with a height of up to 4.3 nm are surrounded by low-height (1 nm) rims. The hillock height varies from a few nanometers to 16 nm with the basal diameter from 200 to 340 nm depending on the ion implantation conditions. The complex crater and hillock formation on the lithium niobate sample surface at the collision spot with the impact of incident angle is discussed.     

Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser

We demonstrate that Yb-doped Ca₄GdO(BO₃)₃ (GdCOB) crystals are suitable for the development of high-power diode-pumped lasers emitting at around 1.04 μm. A 15%-doped Yb:GdCOB crystal was longitudinally pumped with a cw fiber-coupled diode emitting 10 W at 976 nm. While 5.2 W of diode power was absorbed, we obtained 3.2 W of 1043-μm laser light, with a beam quality factor M² equal to 3, and 2.5 W in a diffraction-limited beam. Furthermore, the laser is continuously tunable between 1018 and 1086 nm. Thermal effects have been investigated with a Shack–Hartmann wavefront analyser: although thermal lensing is not negligible, it does not affect the performance of the laser with the resonator design we used. Received: 1 August 2000 / Revised version: 18 September 2000 / Published online: 21 February 2001     

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Nd,Cr:Gd₃Sc₂Ga₃O₁₂ (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8±0.1 J cm⁻² reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈3 J cm⁻² resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer–Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr³⁺ and Nd³⁺ ions, similar to that of the bulk crystal. Received: 1 October 1999 / Accepted: 15 October 1999 / Published online: 23 February 2000     

Efficient and compact intracavity-frequency-doubled Nd:GdVO4/KTP laser end-pumped by a fiber-coupled laser diode

A compact and efficient diode-pumped intracavity-frequency-doubled Nd:GdVO₄/KTP green laser is demonstrated with a flat–flat cavity design. With a 1.3 at. % Nd³⁺-doped GdVO₄ crystal and pumped at the weak-absorption peak of 806 nm, the second-harmonic output power at 532 nm was measured to be 1.95 W at an incident pump power of 8.4 W, corresponding to an optical conversion efficiency of 23.2%. The output characteristic at the fundamental wavelength of 1.063 μm was investigated with two different pump wavelengths. More than 4.5-W output power was generated when the laser was pumped at 806.2 nm. Received: 26 July 2000 / Revised version: 18 September 2000 / Published online: 7 February 2001