分光路二维剪切干涉强激光腔镜变形检测系统

介绍一种分光路二维剪切干涉光电检测系统。该系统实现了两正交方向(二维)同时进行检测与计算机自动化数据处理;采用了一系列消噪声措施和两图像相减等技术,使得波前重构中能较好地采用简单的数值积分方法;并得到了在士10μm的测量范围内,方差不超过0. 257μm和0. 05μm的灵敏度。利用该系统成功地对强激光腔镜变形过程实现了动态检测。     

稳频半导体激光器的温度控制技术

设计了一种用于半导体激光器稳频的恒温控制器,在室温下2h的测试时间中,测试恒温稳定度为5mK,配合稳定度为±2μA的恒流源,半导体激光器自由运行时激光频率波动稳定在100MHz范围内。     

电光晶体调谐的外腔反馈半导体激光器

报道一种用电光晶体实现快速调谐和凋制激光频率的方法.在Littrow型外腔反馈半导体激光中插入LiNbO3晶体,利用LiNbO3晶体的电光效应,通过改变晶体电压来调节激光器的有效腔长,可以对激光频率进行快速的调谐和调制.采用该方法,自制外腔反馈半导体激光器的调谐频率可达到2 kHz,它的调谐范围为350 MHz,激光频率调谐系数约为1.06 MHz/V,用饱和吸收光谱观测频率调谐的效果.快速激光频率调制可以应用在稳频技术上,将外腔反馈半导体激光器调制在5～100 kHz频率下,均获得了87Rb原子D2线的饱和吸收光谱的色散信号,并实现了激光频率在饱和吸收峰上的长期稳定.     

A Narrow Line Width Tunable Diode Laser System

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半导体激光器塞曼调制稳频的实验对比研究

首先阐述了实现半导体激光器外调制锁频方案的必要性,并针对一种利用塞曼效应进行外调制稳频的实验方案,详细地阐述了其基本思想和实验原理,以及这种稳频方案相对于一般的内调制饱和吸收稳频技术在实验上的差异.本文给出的具体实验参数和实验结果表明,这种方案相对于其他方案可以获得同等好的锁频质量.不仅如此,本文还给出了塞曼调制稳频和电流调制稳频的锁定频率输出的监视对比情况,从对比结果中,我们可以清楚地看到塞曼调制稳频使得激光器锁定频率无调制输出的优越特性.     

A Tunable External Cavity Laser Diode Possessing a Stable Wavelength

In this work we describe a simple external-cavity laser diode equipped with a feedback control system, in which a high-resolution position-sensitive detector detects the slight misalignment of the light within the cavity. Our system not only provides a stable wavelength that can be tuned within a maximum scanning range of 1.87 nm, but also allows for faster scanning, through precise control of the reflection angle within the cavity. The simultaneous controls on the rotation-angle of the external mirror and the injection current enabled us to realize continuous wavelength-tuning.     

二极管激光泵浦固体激光器和稳频研究

用调制法布里－珀罗干涉仪方法稳定二极管激光泵浦的ＮｄＹＶＯ４单频激光器的频率。在锁定情形下，激光频从自由运行慢漂移１．４３ＭＨｚ／ｓ和抖动±２．５ＭＨｚ分别改善到７５．７５ｋＨｚ／ｓ和±１ＭＨｚ     

基于降温技术的宽范围外腔光栅可调谐半导体激光器

使用半导体制冷块,通过优化设计两级制冷系统,并结合隔离、密封等措施,将LD的温度冷却到-20 ℃,使室温下输出波长为789 nm的激光器工作在780 nm附近,改变了约9 nm.结合外腔光栅反馈技术,可以使激光器的输出波长稳定在Rb原子的D2线上.自制了一个简单的电路,能够以适当的比例同时调谐光栅压电陶瓷的电压和激光器的驱动电流,使激光器可以连续调谐1O GHz以上而不跳模.     

Single-lobed Near Diffraction-limited Beam from 1W Laser Diode Array with an External Cavity

Abstract　An external cavity for the laser diode array with a conventional mirror in what we call two-time self-injection operation is presented. The external cavity consists of two lenses, a flat external mirror(EM) in the image plane of the array and a prism that is used as an output coupler. The single-lobed near diffraction-limited far field beam of a 1 W 10-stripe gain-guided LD array lies at 6.4°～9° with the external cavity operation in two-time self-injection mode, whereas at 2.5°～3.0° for its normal feedback operation. The width of the far field beam (FWHM) is 0.43° and 0.63° at driving current of 2 and 3.2 ×Ithr, respectively, much narrower than that in normal feedback operation, but at the expense of lower output power. The output of the system is very stable and insensitive to the tilt and position of the EM.     

Single-lobed Near Diffraction-limited Beam from 1W Laser Diode Array with an External Cavity

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Single-Mode Operation of Broad-Area Diode Laser at 670 nm by External Cavity Configuration with a Diffraction Grating

We demonstrate the single mode operation of a broad-area diode laser at 670 nm by means of an external cavity configuration using a diffraction grating. The output power of 150 mW is obtained with a spectral width of 40 MHz.