Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films

We investigated the effects of indium doping on the superconducting properties of YBCO sintered samples and thin films. In₂O₃-doped YBCO and YBa₂Cu_3−xIn_xO_y sintered samples showed a gradual decrease in the critical temperature (T_c) with increasing indium content; however, a T_c value above 80 K was maintained even up to 30 vol.% addition and x = 0.4, respectively. Ba₃Cu₃In₄O₁₂ was detected by X-ray diffractometry and energy-dispersive X-ray spectroscopy as a reaction product for both sintered samples. The normalized J_c under a magnetic field of 0.1 T showed a maximum at x = 0.3. Indium-doped YBCO films prepared by pulsed laser deposition showed a similar dependence of T_c on indium content as the sintered samples.     

Spectroscopic characterization of Yb:Sc2O3 transparent ceramics

Yb：Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm-1. There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth （11 nm） and an emission cross-section of 1.8×10^-20 cm^2. The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb：Sc2O3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb：Sc2O3 transparent ceramics are a promising material for short pulse lasers.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Superconductivity in the hole-doped oxy-arsenide RE1−xSrxFeAsO (RE = La, Pr)

Bulk superconductivity was observed in the FeAs-based RE_1−xSr_xFeAsO (RE = La, Pr) when the di-valence element Sr was substituted to the site of the tri-valence element La and Pr. The maximum superconducting transition temperatures T_c for the two systems are 26 K and 16.3 K, respectively. The doping dependence of the electrical properties and structure of these two systems were investigated systematically. A roughly monotonic increase of T_c and the lattice constants (a-axis and c-axis) with Sr concentration and a saturation behavior in the high doping levels were found. We confirmed that conduction in this type of materials is dominated by hole-like charge carriers by the Hall effect measurements. Also the resistive measurements revealed possible higher upper critical field in these systems comparing with the electron-doped ones.     

Structural and optical properties of Er, Yb co-doped Y2O3 thin films

Thin Er³⁺, Yb³⁺ co-doped Y₂O₃ films were grown on (1 0 0) YAG substrates by pulsed laser deposition. Ceramic targets having different active ion concentration were used for ablation. The influence of the rare-earth content and oxygen pressure applied during the deposition on the structural, morphological and optical properties of the films were investigated. The films deposited at the lower pressure, 1 Pa, and at 1/10 Er to Yb doping ratio are highly textured along the (1 1 1) direction of the Y₂O₃ cubic phase. In addition to the crystalline structure, these films possess smoother surface compared to those prepared at the higher pressure, 10 Pa. All other films are polycrystalline, consisting of cubic and monoclinic phases of Y₂O₃. The rougher surface of the films produced at the higher-pressure leads to higher scattering losses and different behavior of the reflectivity spectra. Optical anisotropy in the films of less than 0.004 was measured regardless of the monoclinic structure obtained. Waveguide losses of about 1 dB/cm at 633 nm were obtained for the films produced at the lower oxygen pressure.     

Investigation of up-conversion luminescence properties of RE/Yb co-doped Y2O3 transparent ceramic (RE=Er, Ho, Pr, and Tm)

RE/Yb co-doped Y₂O₃ transparent ceramics (RE=Er, Ho, Pr, Tm) were fabricated and characterized from the point of up-conversion luminescence. All the samples exhibit high transparence not only in near-infrared band (NIR) band but also in visible region, which ensures the output of the up-conversion luminescence. Under 980 nm excitation, green and red emissions were observed in Er, Yb:Y₂O₃ transparent ceramic, while green emission was detected in Ho, Yb and Pr, Yb co-doped Y₂O₃ transparent ceramics. In Tm, Yb co-doped Y₂O₃ ceramic, very intense blue up-conversion luminescence was detected. The dependence of up-conversion emission intensity on the pumping power was measured for each RE/Yb co-doped Y₂O₃ transparent ceramic, and the up-conversion mechanism was discussed in detail. Meanwhile, the energy transfer efficiency was calculated.     

Y2O3:Yb3+,Tm3+纳米材料的可见及紫外上转换发光

通过燃烧法制备了Yb³⁺-Tm³⁺共掺的Y₂O₃纳米粉体,并对样品在980 nm激光照射下的上转换发光特性进行了研究.实验发现,样品在可见光区域能够产生强烈的蓝色发光(476 nm和487 nm)和较弱的红色发光(约650 nm),而且同时观察到了两个紫外发光峰¹I₆→³H₆ (~297 nm)和^{1关键词： 2O₃:Yb3+')" href="#">Y₂O₃:Yb3+ 3+}')" href="#">Tm³⁺ 上转换光谱 敏化 紫外发光     

Growth and properties of air-processed GdBa2Cu3O7−δ superconductors with fined Gd2BaCuO5 and Gd2Ba4CuFeOy additions

We have succeeded in synthesizing a powder form of Gd₂Ba₄CuFeO_y (Gd2411) in air. GdBa₂Cu₃O_7−δ (Gd123)/Gd₂BaCuO₅ (Gd211) precursor powders added with different amounts of Gd₂Ba₄CuFeO_y (x = 0, 0.002, 0.004, 0.02) in molar ratio to Gd123 have been fabricated successfully into the form of large, single grains by the top seeded melt growth (TSMG) process. The relation between the additions amounts of Gd2411/Gd211 and critical current density (J_C) was analyzed. We found Gd2411 particles stably exist in the Gd123 matrix without degradation of superconducting properties owing to the existence of the Fe magnetic ion. The trapped field was observed to increase significantly compared with the bulk without Gd2411 additions.     

The up-conversion properties of Yb and Er doped Y4Al2O9 phosphors

Er³⁺ doped and Yb³⁺/Er³⁺ co-doped Y₄Al₂O₉ phosphors are prepared by the sol-gel method. The effect of dopant concentration on the structure and up-conversion properties is investigated by X-ray diffraction (XRD) and photoluminescence, respectively. XRD pattern indicates that the sample structure belongs to monoclinic. Under 980 nm excitation, the green and red up-conversion emissions are observed and the emission intensities depended on the Yb³⁺ ion concentration. The green up-conversion emissions decrease with the increase of Yb³⁺ concentration, while red emission increases as Yb³⁺ concentration increases from 0 to 8 at% and then decreases at high Yb³⁺ concentration. The mechanisms of the up-conversion emissions are discussed and results shows that in Er³⁺ and Yb³⁺/Er³⁺ co-doped system, cross-relaxation (CR) and energy transfer (ET) processes play an important role for the green and red up-conversion emissions.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

Fe₂O₃/Al₂O₃ catalysts were prepared by solid state reaction method using α-Fe₂O₃ and γ-Al₂O₃ nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ₃ and τ₄ are attributed to positronium annihilation in two types of pores distributed inside Al₂O₃ grain and between the grains, respectively. With increasing Fe₂O₃ content from 3 wt% to 40 wt%, the lifetime τ₃ keeps nearly unchanged, while the longest lifetime τ₄ shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe₂O₃ content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ₄ is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.     

Synthesis, characterization and melt processing of Y1−x(Yb0.9Nd0.1)xBa2Cu3Oz superconductors

Effects of a combined substitute of Yb and Nd on Y site on the superconducting properties of YBa₂Cu₃O_y have been studied. We synthesized Y_1−x(Yb_0.9Nd_0.1)_xBa₂Cu₃O_z compound with x = 0.2, 0.4, 0.6, 0.8 and 1.0. Here, the ratio of Yb–Nd was fixed to be 9:1 for obtaining 123 phase without secondary phases. The melt processing thermal profiles for Y_1−x(Yb_0.9Nd_0.1)_xBa₂Cu₃O_z with x = 0.2 and 0.4 and the addition of 40 mol% {Y_1−x(Yb_0.9Nd_0.1)_x}₂BaCuO₅ and 0.5 wt% Pt in air were determined on the basis of the thermal analysis results. All samples showed a low grain growth rate, particularly for high x values, which may be partially ascribed to un-optimized thermal schedules. Although almost all the samples exhibited low J_c values, the sample with x = 0.2 exhibited T_c of 88.8 K and a relatively high J_c value of 16,000 A/cm² at 77 K for H//c-axis.     

Tm2O3相对于Si的能带偏移研究

利用分子束外延系统在Si (001) 衬底上制备了单晶Tm₂O₃薄膜, 利用X射线光电子能谱研究了Tm₂O₃相对于Si的能带偏移. 得出Tm₂O₃相对于Si的价带和导带偏移分别为3.1 eV± 0.2 eV和1.9 eV± 0.3 eV, 并得出了Tm₂O₃的禁带宽度为6.1 eV± 0.2 eV. 研究结果表明Tm₂O₃是一种很有前途的高k栅介质候选材料. 关键词： 2O₃')" href="#">Tm₂O₃ X射线光电子能谱 能带偏移     

Acid-base properties of Ni-MgO-Al2O3 materials

Ni-MgO-Al₂O₃ materials of different Ni/Mg ratios were prepared by the co-precipitation method. Acid-base properties of the samples after calcination and reduction were examined by the temperature programmed desorption of ammonia and carbon dioxide. Thermal treatment of the materials in air at 400 °C led to the formation of hydrotalcite-like phases. The increase of Ni/Mg ratio decreased the stability of the hydrotalcite structure. The number and the strength of acid and base sites were related to the Ni/Mg ratio and thermal treatment conditions of materials. It was found that the replacement of Ni with Mg decreased the acidity and increased basicity of the surface of oxide materials. Thermal treatment of the samples in hydrogen led to the structural changes. The presence of magnesia improved thermal stability. The ratio of the number of acid to base sites in the reduced samples gradually increased with the increase of magnesia content.     

Upconversion emission enhancement of TiO2 coated lanthanide-doped Y2O3 nanoparticles

To investigate the upconversion emission,this paper synthesizes Tm3+ and Yb3+ codoped Y2O3 nanoparticles,and then coats them with TiO2 shells for different coating times.The spectral results of TiO2 coated nanoparticles indicate that upconversion emission intensities have respectively been enhanced 3.2,5.4,and 2.2 times for coating times of 30,60 and 90 min at an excitation power density of 3.21×102 W.cm 2,in comparison with the emission intensity of non-coated nanoparticles.Therefore it can be concluded that the intense upconversion emission of Y2O3:Tm3+,Yb3+ nanoparticles can be achieved by coating the particle surfaces with a shell of specific thickness.     

Up-conversion white light of Tm/Er/Yb tri-doped CaF2 phosphors

Tm³⁺/Er³⁺/Yb³⁺ tri-doped CaF₂ phosphors were synthesized using a hydrothermal method. The phosphors were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and up-conversion (UC) emission spectra. After annealing, the phosphors emitted white light under a 980 nm continuous wave diode laser (CW LD 2 W) excitation. As the excitation power density changed in the range of 20-260 W/cm², the chromaticity coordinates of the UC light of the phosphor Ca_0.885Tm_0.005Er_0.01Yb_0.1F₂ fell well in the white region of the 1931 CIE diagram. For the proportion of red, green and blue (RGB) in white light is strict, key factors for achieving UC white light, such as host materials, rare earth ions doping concentrations, annealing temperatures, as well as the excitation power densities, were investigated and discussed.     

Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics

In this article, the structural and electrical characteristics of high-k Tm₂Ti₂O₇ gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm₂Ti₂O₇ dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm₂Ti₂O₇ structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.     

Concentration effect of Tm on cathodoluminescence properties of SiO2:Tm and SiO2:Ho,Tm systems

Cathodoluminescence (CL) properties of SiO₂ powders activated with thulium (Tm³⁺) and holmium (Ho³⁺) ions prepared by a sol–gel process were investigated. Different molar concentrations of Tm³⁺ co-doped with Ho³⁺ were studied. The 460 nm peak was monitored and the influence of the beam energy and concentration of Tm³⁺ ions on the emission properties of this peak was also monitored. The peculiar behavior whereby the 460 nm emission peak decreases and the increase in the 705 and 865 nm peaks with the increase in the concentration of Tm³⁺ ions is reported. The relationship between the accelerating beam voltage and the CL intensity of the blue emission peak (460 nm peak) is established. Morphology, particle size and optical properties were characterized with Scanning electron microscopy (SEM), UV/VIS Lambda 750 S spectrometer and Auger electron spectroscopy (AES) equipped with Ocean Optics S2000, respectively.     

Effect of BiFeO3 addition on Bi2O3–ZnO–Nb2O5 based ceramics

In this paper, low temperature sintering of the Bi₂(Zn_1/3Nb_2/3)₂O₇ (β-BZN) dielectric ceramics was studied with the use of BiFeO₃ as a sintering aid. The effects of BiFeO₃ contents and the sintering temperature on the phase structure, density and dielectric properties were investigated. The results showed that the sintering temperature could be decreased and the dielectric properties could be retained by the addition of BiFeO₃. The structure of BiFeO₃ doped β-BZN was still the monoclinic pyrochlore phase. The sintering temperature of BiFeO₃ doped β-BZN ceramics was reduced from 1000 °C to 920 °C. In the case of 0.15 wt.% BiFeO₃ addition, the β-BZN ceramics sintered at 920 °C exhibited good dielectric properties, which were listed as follows: ε_r = 79 and tan δ = 0.00086 at a frequency of 1 MHz. The obtained properties make this composition to be a good candidate for the LTCC application.     

Study on up-conversion emissions of Yb/Tm co-doped GdF3 and NaGdF4

The Yb³⁺/Tm³⁺ co-doped GdF₃ and NaGdF₄ samples were synthesized through a combination method of a co-precipitation and an argon atmosphere annealing procedures. X-ray diffraction analysis indicated that the Yb³⁺/Tm³⁺ co-doped GdF₃ sample crystallized well and was orthorhombic phase, and the Yb³⁺/Tm³⁺ co-doped NaGdF₄ sample was hexagonal phase. With a 980-nm semiconductor continuous wave laser diode as the excitation source, the up-conversion emission spectra of the two samples in the wavelength range of 240-510 nm were recorded. In the up-conversion emissions of the samples, Yb³⁺ transferred energies to Tm³⁺ resulting in their ultraviolet, violet, and blue up-conversion emissions. And, Tm³⁺ simultaneously transferred energies to Gd³⁺, which finally resulted in ultraviolet up-conversion emissions of Gd³⁺. The study on the excitation power dependence of up-conversion fluorescence intensity indicated that there were multi-photon (three-, four-, five-, and six-) processes in the up-conversion emissions of the samples. And the up-conversion emissions of Gd³⁺ and Tm³⁺ in the Yb³⁺/Tm³⁺ co-doped GdF₃ and NaGdF₄ samples were compared studied, too.