Ab initio study of aluminum chemical vapor deposition from dimethylaluminum hydride: a gas phase reaction mechanism

The effect of preheating of dimethylaluminum hydride (DMAH) as a gas on the epitaxial growth in aluminum chemical vapor deposition (Al-CVD) is studied theoretically. The chemical changes of DMAH in the gas phase such as unimolecular decomposition reactions, bimolecular reactions and polymerizations are treated using ab initio molecular orbital method (MP2/6-31G**) and density functional theory (B3P86/LanL2DZ). The gas phase equilibrium composed of the previous reaction products under the usual experimental conditions for Al-CVD is also investigated in detail as the initial stage of the CVD process. From the energetics point of view, unimolecular decomposition reactions and bimolecular reactions hardly occur, however, polymerizations of DMAH take place readily at the low temperatures found in Al-CVD. A large amount of DMAH-dimer and a small amount of DMAH-monomer and trimer coexist in the equilibrium state.     

New molecular compound precursor for aluminum chemical vapor deposition

A new type of precursor for aluminum chemical vapor deposition (Al‐CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al‐CVD, where a good selectivity between the Si and the SiO₂ mask, a 3.0 μΩ cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply. Copyright © 2000 John Wiley & Sons, Ltd.     

Alloys prepared by plasma-enhanced chemical vapor deposition (PECVD)

Three different techniques for the deposition of thin metal alloy films by plasma-enhanced chemical vapor deposition are described. These are the joint vaporization of a mixture of precursors, the use of separate sources connected directly to the reactor, and finally, the use of several reservoirs arranged in series. Various organometallics have been used as precursors to prepare combinations of Fe/Co and Au/Pt/Pd.     

Quantum yield and carbon contamination in thin‐film deposition reaction by core‐electron excitations

The excitation energy dependence of the reaction quantum yield and the carbon contamination in synchrotron radiation‐stimulated aluminum thin‐film deposition using the low‐temperature condensed layer of dimethylaluminum hydride (DMAH) were evaluated quantitatively in the vacuum ultraviolet region for the first time. It has been found that the core‐electron excitation gives a few tens to hundreds of times higher a reaction quantum yield than the valence‐electron excitations. This is explained qualitatively by the Auger‐stimulated desorption model. The carbon contamination decreases due to a site‐specific effect of the core‐electron excitations. Copyright © 1999 John Wiley & Sons, Ltd.     

UV photochemical vapor generation-atomic fluorescence spectrometric determination of conventional hydride generation elements

A systematic investigation of UV photochemical vapor generation (photo-CVG) and its potential application for seven typical hydride-forming elements (As, Sb, Bi, Te, Sn, Pb and Cd) when combined with atomic fluorescence spectrometry (AFS) detection is presented. These analyte ions were converted to volatile species following UV irradiation of their aqueous solution to which low molecular weight organic acids (such as formic, acetic or propionic acid) had been added, and introduced to an atomic fluorescence spectrometer for subsequent analytical measurements. The experimental conditions for photo-CVG and the interferences arising from concomitant elements were carefully investigated. Limits of detection as low as 0.08, 0.1, 0.2 and 0.5 ng mL^− 1 were obtained for Te, Bi, Sb and As, respectively, comparable to those by hydride generation-AFS. The RSDs obtained with the proposed method for these elements were better than 5% at 50 ng mL^− 1. It is noteworthy that the presence of TiO₂ nanoparticles combined with UV irradiation remarkably enhances the CVG efficiencies of Se(VI) and Te(VI), which cannot form hydrides with KBH₄/NaBH₄. Moreover, photo-CVG has a greater tolerance toward interferences arising from transition elements than hydride generation, and this facilitates its application to the analysis of complicated sample matrices.     

Synthesis of electro‐active membranes by chemical vapor deposition (CVD) process

In the past two decades, many research is being carried out on coating of textile membranes with conductive polymers. In order to functionalize the textile membranes, coating of different intrinsically conductive polymers can be applied on these membranes through appropriate coating techniques like electrochemical polymerization, wet chemical oxidation and chemical vapor deposition (CVD). Noticeably, CVD process is one of the most suitable and environment friendly technique. In this research, microporous polyester and polytetrafluoroethylene (PTFE) membranes were coated with conductive poly(3,4‐ethylenedioxythiophene) (PEDOT) by CVD process in the presence of ferric(III)chloride (FeCl₃) used as an oxidant. Polymerization of PEDOT on the surface of membranes and pore size was examined by optical microscope and scanning electron microscopy (SEM). Structural analysis investigated with ATR‐FTIR, which revealed the successful deposition of PEDOT on membranes without damaging their parent structures. The amount of PEDOT in PEDOT‐coated polyester and PTFE membranes was explored with the help of thermogravimeteric analysis. Electrical resistance values of PEDOT‐coated membranes were measured by two probe method. The effect of different electrolyte solutions such as, distilled H₂O, Na₂SO₄, HCl, and H₂SO₄ on electrical properties of produced conductive membranes was investigated after dipping for certain period of time. It was found that membranes dipped in H₂SO₄ show very low electrical resistance values, i.e. 0.85 kΩ for polyester membrane and 1.17 kΩ for PTFE membrane. The obtained PEDOT‐coated electro‐active membranes may find their possible utility in fuel cells, enzymatic fuel cells, and antistatic air filter applications. Copyright © 2014 John Wiley & Sons, Ltd.     

On-wafer thermomechanical characterization of a thin film polyimide formed by vapor deposition polymerization for through-silicon via applications: Comparison to plasma-enhanced chemical vapor deposition SiO2

Thin-film polyimides were prepared by solvent-less vapor deposition polymerization (VDP) from pyromellitic dianhydride and 4,4′-oxydianiline at 200 °C for liner dielectric formation of vertical interconnects called through-silicon vias (TSVs) used in three-dimensionally stacked integrated circuit (3DICs). FTIR, synchrotron XPS, and TDS were employed for determining the imidization ratio, and in addition, the mechanical properties, coefficient of thermal expansion and Young's modulus, of the VDP polyimide were characterized on Si wafers. The VDP polyimide exhibited extremely high conformality, beyond 75%, toward high-aspect-ratio deep Si holes, compared with conventional SiO₂ prepared by plasma-enhanced chemical vapor deposition. The adhesion between the VDP polyimide and Si wafer was enhanced by an Al-chelate promotor. Remarkably, the VDP polyimide TSV liner dielectrics showed much less thermomechanical stresses applied to the Si surrounding the TSVs than the plasma-chemical vapor deposition SiO₂. The small keep-out zone is expected for scaling down highly reliable 3DICs for the upcoming real artificial intelligence society.     

Selective deposition of Sn on the Pt surface of Pt/ZnAl2O4 catalyst and addition effect on isobutane dehydrogenation

Pt−Sn bimetallic catalysts were prepared by a CVD technique in which Sn was added by passing volatile organometallic compounds over Pt/ZnAl₂O₄ in a H₂ flow. Mixed Pt−Sn sites improve the activity of isobutane dehydrogenation, while Sn on the support improves the selectivity.     

Fluid boundary layer effects in atmospheric-pressure plasma diamond film deposition

Diamond films were deposited in an atmospheric-pressure radio frequency plasma reactor. Hydrogen and methane were injected coaxially into the plasma as a high-velocity jet which impinged on the molybdenum substrate. In some cases argon was added to the reactant jet to increase its momentum, thereby reducing the boundary layer thickness. In most cases argon addition substantially, improved diamond growth. A numerical model was developed, which calculated two-dimensional reactor temperature and velocity, distributions, and the chemical kinetics in the boundary layer. The calculations indicate that under the experimental conditions argon addition reduced the thickness of the hydrogen nonequilibrium boundary layer from 3.5 to 1.0 mm. In addition, the calculations suggest that monatomic carbon may be a key diamond growth species under thermal plasma conditions.     

Chemical vapor deposition of metal borides: 6. The formation of neodymium boride thin film materials from polyhedral boron clusters and metal halides by chemical vapor deposition

The chemical vapor deposition (CVD) of crystalline thin films of neodymium hexaboride (NdB₆) was achieved using either nido ‐pentaborane(9) or nido ‐decaborane(14) with neodymium(III) chloride on different substrates. The highly crystalline NdB₆ films were formed at relatively moderate temperatures (835 °C, ca. 1 µm/h) and were characterized by scanning electron microscopy, X‐ray emission spectroscopy, X‐ray diffraction and glow discharge mass spectrometry. The NdB₆ polycrystalline films were found to be pure and uniform in composition in the bulk material. Depositions using CoCl₂, NdCl₃ and B₅H₉ as the CVD precursors resulted in the formation of a mixture of NdB₆ and CoB phases, rather than the ternary phase. Copyright © 2008 John Wiley & Sons, Ltd.     

Formation of High-quality Advanced High-k Oxide Layers at Low Temperature by Excimer UV Lamp-assisted Photo-CVD and Sol-gel Processing

IntroductionOne of the most critical challenges for deepsubmicron silicon researches is the technologicallimit to the use of silicon dioxide as the gate dielec-tric. For sub- 0 .1μm CMOS technology roadmapspredict the need for a sub- 2 nm Si- oxide gate di-electric[1,2 ] . Off- state tunnelling effects for transis-tors with gate oxide thickness below 2 nm lead tohigh leakage current densities of1 _ 1 0 A/cm2 [3 ] ,which become a serious obstacle for transistors,particularly for the rapidly …     

Synthesis of 1,1,9,9-tetrafluoro[2.2]paracyclophane and its polymerization by vapor deposition method

1,1,9,9-Tetrafluoro[2.2]paracyclophane ( 1 ) was prepared successfully as white crystals in 72% yield via two-step reactions from 1,9-diketo[2.2]-paracyclophane. The polymerization of 1 by the vapor deposition method was carried out at pyrolysis temperature range of 400 to 800°C and deposition temperature range of ?20 to 20°C, and a tough, transparent poly(α,α-difluoro-p-xylylene) film was obtained in 72% yield at the pyrolysis temperature of 750°C and the deposition temperature of ?20°C. It was found that the pyrolysis of 1 gave a reactive α,α-difluoro-p-xylylene, which polymerized on the head-to-tail addition to give poly(α,α-difluoro-p-xylylene). Some properties such as solubility, thermal stability, glass transition temperature, and density for poly(α,α-difluoro-p-xylylene) were studied. © 1995 John Wiley & Sons, Inc.     

Production of highly conductive textile viscose yarns by chemical vapor deposition technique: a route to continuous process

An oxidative chemical vapor deposition (OCVD) process was used to coat flexible textile fiber (viscose) with highly conductive polymer, poly (3,4‐ethylenedioxythiophene) (PEDOT) in presence of ferric (III) chloride (FeCl₃) oxidant. OCVD is a solvent free process used to get uniform, thin, and highly conductive polymer layer on different substrates. In this paper, PEDOT coated viscose fibers, prepared under specific conditions, exhibited high conductivity 14.2 S/cm. The effects of polymerization conditions, such as polymerization time, oxidant concentration, dipping time of viscose fiber in oxidant solution, and drying time of oxidant treated viscose fiber, were carefully investigated. Scanning electron microscopy (SEM) and FT‐IR analysis revealed that polymerization of PEDOT on surface of viscose fiber has been taken place and structural analysis showed strong interactions between PEDOT and viscose fiber. Thermogravimetric analysis (TGA) was employed to investigate the amount of PEDOT in PEDOT coated viscose fiber and interaction of PEDOT with viscose fiber. The effect of PEDOT coating on the mechanical properties of the viscose fiber was evaluated by tensile strength testing of the coated fibers. The obtained PEDOT coated viscose fiber having high conductivity, could be used in smart clothing for medical and military applications, heat generation, and solar cell demonstrators. Copyright © 2010 John Wiley & Sons, Ltd.     

Preparation and Magnetic Properties of Submicron CrO2 Thin Film on Poly-crystal TiO2 Film

The submicron chromium dioxide(CrO₂) thin film was fabricated on a poly-crystal titania(TiO₂) film using Si wafers as substrates by atmospheric pressure chemical vapor deposition(CVD) method. X-Ray diffraction patterns show that the CrO₂ films were pure rutile structure. Scanning electron microscopy(SEM) images indicate that the CrO₂ films consisted of submicron grains with a grain size of 250―750 nm. The magnetic researches reveal that the magnetic easy axis is parallel to the films, and at room temperature, the CrO₂ films show linear magnetoresistance.     

Preparation of thick silica films in the presence of poly(acrylic acid) by using electrophoretic sol-gel deposition

Thick silica films were fabricated by electrophoretic sol-gel deposition of silica particles on a stainless steel sheet. Using sols prepared by the sol-gel method with poly(acrylic acid) (PAA) films of ca. 25 m in thickness were prepared with no cracks. The films were shown to be agglomerates of monodispersed silica particles with PAA. The size of the silica particles decreased with an increase in the added amount of PAA. The deposited weight was considerably larger for the films with PAA than that of the films without PAA.     

Composite thin films of poly(phenylene oxide)/poly(styrene) and PPO/silver via vapor phase deposition

We report fabrication of thin (100～300 nm) poly(phenylene oxide) (PPO) films and their composites with poly (styrene) (PS) and silver (Ag) nanoparticles using a one‐step electron beam‐assisted vapor phase co‐deposition technique. Surface morphology and the structure of the deposited polymer thin film composites were characterized by FTIR, Raman, X‐ray spectroscopy, and contact angle measurements. As‐deposited PPO films and PPO/Ag composites were of porous nature and contrary to solvent casting techniques were free from nodular growth. In the case of PPO/PS thin film polymer composites, however, film morphology displayed nodular growth of PPO with nodule diameters of about ～200 nm and height of approximately 50 nm. Unique morphological changes on the porous PPO thin film surface were noticed at different Ag filling ratios. Further, the capacitance of PPO/Ag composites (<16 wt%) were measured under radio‐frequency conditions and they were functional up to 100 MHz with an average capacitance density of about 2 nF/cm². The fabricated PPO‐based composite systems are discussed for their potential applications including embedded capacitor technology. Copyright © 2008 John Wiley & Sons, Ltd.     

Fabrication of Au/Titania Composite Nanodot Arrays from Au‐Loaded Block Copolymer Micellar Films

Summary: A simple route to an ordered array of metal/semiconductor oxide composite nanodots is presented. Micellar monolayer films of polystyrene‐block‐poly(2‐vinyl pyridine) (PS‐b‐P2VP) loaded with HAuCl₄ in the P2VP nanodomains are used as templates. TiO₂ is generated selectively within the polar P2VP domains of PS‐b‐P2VP/HAuCl₄ films by chemical vapor deposition of TiCl₄. Subsequent removal of the organic matrix by oxygen plasma or UV light leads to an array of Au/TiO₂ composite nanoparticles on the substrate surface.

Schematic illustration of the process to fabricate an array of Au/titania composite nanodots.     

Fabrication of a thin palladium membrane supported in a porous ceramic substrate by chemical vapor deposition

A thin, gas-tight palladium (Pd) membrane was prepared by the counter-diffusion chemical vapor deposition (CVD) process employing palladium chloride (PdCl₂) vapor and H₂ as Pd precursors. A disk-shaped, two-layer porous ceramic membrane consisting of a fine-pore γ-Al₂O₃ top layer and a coarse-pore -Al₂O₃ substrate was used as Pd membrane support. A 0.5–1 μm thick metallic membrane was deposited in the γ-Al₂O₃ top layer very close to its surface, as verified by XRD and SEM with a backscattered electron detector. The most important parameters that affected the CVD process were reaction temperature, reactants concentrations and top layer quality. Deposition of Pd in the γ-Al₂O₃ top layer resulted in a 100- to 1000-fold reduction in He permeance of the porous substrate. The H₂ permeation flux of these membranes was in the range 0.5–1.0 × 10⁻⁶ mol m⁻² s⁻¹ Pa⁻¹ at 350–450°C. The H₂ permeation data suggest that surface reaction steps are rate-limiting for H₂ transport through such thin membranes in the temperature range studied.