Controllable synthesis and optical properties of novel ZnO cone arrays via vapor transport at low temperature

Novel ZnO cone arrays with controllable morphologies have been synthesized on silicon (100) substrates by thermal evaporation of metal Zn powder at a low temperature of 570 degrees C without a metal catalyst. Clear structure evolutions were observed using scanning electron microscopy: well-aligned ZnO nanocones, double-cones with growing head cones attached by stem cones, and cones with straight hexagonal pillar were obtained as the distance between the source and the substrates was increased. X-ray diffraction shows that all cone arrays grow along the c-axis. Raman and photoluminescence spectra reveal that the optical properties of the buffer layer between the ZnO cone arrays and the silicon substrates are better than those of the ZnO cone arrays due to high concentration of Zn in the heads of the ZnO cone arrays and higher growth temperature of the buffer layer. The growth of ZnO arrays reveals that the cone arrays are synthesized through a self-catalyzed vapor-liquid-solid (VLS) process.     

Self-organized hierarchical ZnS/SiO(2) nanowire heterostructures

Novel hierarchical heterostructures formed by wrapping ZnS nanowires with highly dense SiO(2) nanowires were successfully synthesized by a vapor-liquid-solid process. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy equipped with an energy-dispersive X-ray spectrometer. Studies indicate that a typical hierarchical ZnS/SiO(2) heterostructure consists of a single-crystalline ZnS nanowire (core) with diameter gradually decreasing from several hundred nanometers to 20 nm and adjacent amorphous SiO(2) nanowires (branches) with diameters of about 20 nm. A possible growth mechanism was also proposed for the growth of the hierarchical heterostructures.     

铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构的制备及表征

利用碳热还原反应气相沉积法制备了铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构. X射线衍射(XRD)、透射电子显微镜(TEM)及X射线能谱(EDS)研究表明, 纳米电缆内芯为结晶完好的单晶纤锌矿结构, 外壳包覆一层氧化硅非晶层. 纳米电缆直径为30-60 nm, 长径比大于100. 掺杂纳米异质结构的生长机理与传统的金属晶种辅助气-液-固(VLS)机理有所不同. 这种掺杂纳米异质结构有望作为理想的结构单元应用于纳米器件领域.     

Single- and double-shelled coaxial nanocables of GaP with silicon oxide and carbon

Coaxial nanocables of gallium phosphide (GaP) core with three different-typed single and double shells (i.e., silicon oxide (SiO(x)), carbon (C), and SiO(x)/C) were exclusively synthesized by the chemical vapor deposition method. The GaP/SiO(x)) nanocables were directly grown on gold-deposited silicon substrates. Deposition of C on the GaP nanowires and GaP/SiO(x) nanocables produces the GaP/C and GaP/SiO(x)/C nanocables, respectively. The outer diameter of the nanocables is <50 nm. The thickness and crystallinity of the C outer layers were controllable by the growth conditions. X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence reveal that the outer layer formation reduces the surface defects of GaP nanowires. A great enhancement of the conductivity due to the C outer layers has been measured by the four-probe method. The growth process of these nanocables has been discussed on the basis of the vapor-liquid-solid mechanism.     

Controlled growth of semiconducting oxides hierarchical nanostructures

Semiconducting ZnO hierarchical nanostructure, where ZnO nanonails were grown on ZnO nanowires, has been fabricated under control experiment with a mixture of ZnO nanopowders and Sn metal powders. Sn nanoparticles are located at or close to the tips of the nanowires and the growth branches, serving as the catalyst for the vapor-liquid-solid growth mechanism. The morphology and microstructure of ZnO nanowire and nanonail were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The long and straight ZnO nanowires grow along [0001] direction. ZnO nanonails are aligned radially with respect to the surface the ZnO nanowire. The long axis direction of nanonails forms an angle of ∼30° to the [0001] direction.     

High-density, aligned SiO2 nanowire arrays: microscopic imaging of the unique growth style and their ultraviolet light emission properties

High-density, free-standing SiO2 nanowire arrays were successfully fabricated by a simple chemical vapor deposition method through a controlled pattern of the micrometer-sized alloyed balls on the Si substrate combined with a local balanced and steady-state reaction vapor environment. The direct observation of temporal evolution of the SiO2 nanowire growth process via the microscopic imaging approach offers us amazing pictures related to the unique vapor-liquid-solid (VLS) growth styles. These novel results are beneficial to understanding the formation mechanism of silica nanowire arrays, and at the same time, they extend our knowledge of VLS growth phenomena. The stable and strong ultraviolet emission properties of the as-grown products are of significant interest for their potential applications related to nanoscale optoelectronic device including ultraviolet-light-emitting devices, etc.     

In situ transmission electron microscopy observation of the growth of bismuth oxide whiskers.

Growth of bismuth oxide (most probably Bi2O3) was observed in situ in a transmission electron microscope. Bi liquid particles were dispersed on the substrates of diamond or SiO2. Introduction of oxygen up to 5 x 10-4 Pa resulted in formation of bismuth oxide (most probably Bi2O3) whiskers. The growth mechanism of the whisker was discussed in terms of a vapor-liquid-solid (VLS) mechanism. It is suggested that the liquid droplet of Bi acts as a physical catalyst for growth of bismuth oxide (most probably Bi2O3) whiskers.     

Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures

In-doped ZnO (IZO) nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the IZO nanowires have been extensively investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The products in general contain several kinds of nanowires. In this work, a remarkable type of IZO zigzag nanowire with a periodical twinning structure has been investigated by transmission electron microscopy (TEM). HRTEM observation reveals that this type of IZO nanowire has an uncommonly observed zinc blend crystal structure. These nanowires, with a diameter about 100 nm, grow along the [111] direction with a well-defined twinning relationship and a well-coherent lattice across the boundary. In addition, an IZO nanodendrite structure was also observed in our work. A growth model based on the vapor-liquid-solid mechanism is proposed for interpreting the growth of zigzag nanowires in our work. Due to the heavy doping of In, the emission peak in photoluminescence spectra has red-shifted as well as broadened seriously.     

Systematic study on experimental conditions for large-scale growth of aligned ZnO nanowires on nitrides

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth chamber pressure for synthesizing high quality aligned ZnO nanowires on GaN substrate. This result provides a road map for large-scale, controlled synthesis of ZnO nanowires on nitride semiconductor substrates with the potential to meet the needs of practical applications. The chemical process involved in the growth process is also systematically elaborated based on experimental data received under different conditions.     

ZnO twin-cones: synthesis, photoluminescence, and catalytic decomposition of ammonium perchlorate

ZnO twin-cones, a new member to the ZnO family, were prepared directly by a solvothermal method using a mixed solution of zinc nitrate and ethanol. The reaction and growth mechanisms of ZnO twin-cones were investigated by X-ray diffraction, UV-visible spectra, infrared and ion trap mass spectra, and transmission electron microscopy. All as-prepared ZnO cones consisted of tiny single crystals with lengths of several micrometers. With prolonging of the reaction time from 1.5 h to 7 days, the twin-cone shape did not change at all, while the lattice parameters increased slightly and the emission peak of photoluminescence shifted from the green region to the near orange region. ZnO twin-cones are also explored as an additive to promote the thermal decomposition of ammonium perchlorate. The variations of photoluminescence spectra and catalytic roles in ammonium perchlorate decomposition were discussed in terms of the defect structure of ZnO twin-cones.     

SWNT Nucleation from Carbon-Coated SiO(2) Nanoparticles via a Vapor-Solid-Solid Mechanism

Since the discovery of single-walled carbon nanotubes (SWNTs) in the early 1990s, the most commonly accepted model of SWNT growth on traditional catalysts (i.e., transition metals including Fe, Co, Ni, etc.) is the vapor-liquid-solid (VLS) mechanism. In more recent years, the synthesis of SWNTs on nontraditional catalysts, such as SiO(2), has also been reported. The precise atomistic mechanism explaining SWNT growth on nontraditional catalysts, however, remains unknown. In this work, CH(4) chemical vapor deposition (CVD) and single-walled carbon nanotube (SWNT) nucleation on SiO(2) nanoparticles have been investigated using quantum-chemical molecular dynamics (QM/MD) methods. Upon supply of CH(x) species to the surface of a model SiO(2) nanoparticle, CO was produced as the main chemical product of the CH(4) CVD process, in agreement with a recent experimental investigation [Bachmatiuk et al., ACS Nano 2009, 3, 4098]. The production of CO occurred simultaneously with the carbothermal reduction of the SiO(2) nanoparticle. However, this reduction, and the formation of amorphous SiC, was restricted to the nanoparticle surface, with the core of the SiO(2) nanoparticle remaining oxygen-rich. In cases of high carbon concentration, SWNT nucleation then followed, and was driven by the formation of isolated sp(2)-carbon networks via the gradual coalescence of adjacent polyyne chains. These simulations indicate that the carbon saturation of the SiO(2) surface was a necessary prerequisite for SWNT nucleation. These simulations also indicate that a vapor-solid-solid mechanism, rather than a VLS mechanism, is responsible for SWNT nucleation on SiO(2). Fundamental differences between SWNT nucleation on nontraditional and traditional catalysts are therefore observed.     

Fabrication and evaluation of ZnO nanorods by liquid-phase deposition

The ZnO nanorod growth mechanism during liquid-phase deposition (LPD) has been investigated, with results considered in the context of phase stabilization, LPD chemical processes, and Gibbs free energy and entropy. Zinc oxide (ZnO) possesses unique optical and electronic properties, and obtaining ZnO species with high specific surface area is important in ZnO applications. Highly c-axis-oriented ZnO films are expected to be utilized in future optical and electrical devices. ZnO nanorods were synthesized using an aqueous solution deposition technique on a glass substrate with a free-standing ZnO nanoparticle layer. ZnO nanorod growth was easily controlled on the nanoscale by adjustment of the immersion time (15-210 min). X-ray diffraction, field-emission scanning electron microscopy (FE-SEM), and film thickness measurements were used to characterize the crystalline phase, orientation, morphology, microstructure, and growth mechanism of the ZnO nanorods. FE-SEM images were analyzed by image processing software, which revealed details of the of ZnO nanorod growth mechanism.     

Growth mechanism of ZnO nanocrystals with Zn-rich from dots to rods

ZnO nanocrystals from dot to rod were synthesized by simply changing Zn2+ concentration in ZnO seed solutions. The growth of ZnO nanocrystals was sensitive to the amount of Zn2+ in the solution. The growth process of ZnO from dot to rod was observed by optical spectra, transmission electron microscopy and X-ray diffraction spectra. From these results, the growth mechanism of ZnO from dots to rods was discussed.     

ZnO或K_2O助剂对Cu/SiO_2-Al_2O_3催化剂上丙三醇和苯胺气相催化合成3-甲基吲哚反应的促进作用

研究了ZnO或K2O助剂对Cu/SiO2-Al2O3上丙三醇和苯胺气相催化合成3-甲基吲哚反应的促进作用,采用X射线衍射、透射电子显微镜、H2程序升温还原、NH3程序升温脱附以及热重-差热分析等技术对催化剂进行了表征.结果表明,适量ZnO或K2O的加入可明显提高催化剂的活性、选择性和稳定性,其中以ZnO的促进作用更强.ZnO不仅能增强活性组分Cu与SiO2-Al2O3载体之间的相互作用、提高Cu在载体表面的分散度,而且可有效抑制反应过程中Cu粒子的烧结;而K2O的加入却降低了Cu分散度,但也对反应过程中Cu粒子的烧结有所抑制.ZnO或K2O的加入均不同程度地增加了Cu/SiO2-Al2O3催化剂的弱酸中心数量,从而促进3-甲基吲哚的生成.     

High surface-to-volume ratio ZnO microberets: low temperature synthesis, characterization, and photoluminescence

Novel hollow ZnO microstructures and ZnO microberets (ZMBs) with nanowires grown vertically on both the inner and outer surfaces of beret shells were synthesized on Si(100) substrates by simple thermal evaporation of pure zinc powder without any catalyst or template material at a relative low temperature of 490 degrees C. XRD, SAED, and HRTEM patterns show that the nanowires and shells of ZMBs are single-crystalline wurtzite structures. The growth mechanism of ZMBs is discussed in detail. The formation of these hollow microstructures depends on the optimum starting time of air introduction. It is a good way to grow well-aligned nanowires by using a nanoscale rough ZnO surface to realize a "self-catalyzed" vapor-liquid-solid process. The photoluminescence spectrum reveals a strong green emission related to the high surface-to-volume ratio of ZMBs. These types of special hollow high surface area structural ZMBs may find potential applications in functional architectural composite materials, solar cell photoanodes, and nanooptoelectronic devices.     

Growth kinetics of heterostructured GaP-GaAs nanowires

We have studied the vapor-liquid-solid (VLS) growth dynamics of GaP and GaAs in heterostructured GaP-GaAs nanowires. The wires containing multiple GaP-GaAs junctions were grown by the use of metal-organic vapor phase-epitaxy (MOVPE) on SiO(2), and the lengths of the individual sections were obtained from transmission electron microscopy. The growth kinetics has been studied as a function of temperature and the partial pressures of the precursors. We found that the growth of the GaAs sections is limited by the arsine (AsH(3)) as well as the trimethylgallium (Ga(CH(3))(3)) partial pressures, whereas the growth of GaP is a temperature-activated, phosphine(PH(3))-limited process with an activation energy of 115 +/- 6 kJ/mol. The PH(3) kinetics obeys the Hinshelwood-Langmuir mechanism, indicating that the dissociation reaction of adsorbed PH(3) into PH(2) and H on the catalytic gold surface is the rate-limiting step for the growth of GaP. In addition, we have studied the competitive thin layer growth on the sidewalls of the nanowires. Although the rate of this process is 2 orders of magnitude lower than the growth rate of the VLS mechanism, it competes with VLS growth and results in tapered nanowires at elevated temperatures.     

Effect of RuO2 in the shape selectivity of submicron-sized SnO2 structures

Several dissimilar types of tin oxide microstructures including bipyramids, cubes, and wires synthesized effectively by means of a simple approach were investigated using X-ray diffraction (XRD), thermogravimetry/differential thermometric analysis (TG-DTA), and X-ray photoelectron spectroscopy (XPS). A possible growth mechanism is proposed using the results of these studies. The texture coefficient values of all the structures, indexed to a tetragonal lattice, exhibit amazing variation in the preferred orientation with respect to their shapes. Although XPS data indicate that wires and cubes have a strong SnO(2) type signal, bipyramids interestingly exhibit both SnO and SnO(2) signals and a correlation of the binding energy helps in understanding the growth kinetics of such submicron structures. The results suggest that the bipyramids are formed because of the vapor-solid process (VS) while wires and cubes are formed by the vapor-liquid-solid (VLS) progression.     

One-dimensional ZnO nanostructure arrays: synthesis and characterization

One-dimensional ZnO nanostructure arrays such as nanowires, nanonails, and nanotrees, have been synthesized by oxygen assisted thermal evaporation of metallic zinc on a quartz substrate over a large area. Morphological evolution of ZnO nanostructures at different time scales and different positions of the substrates have been studied by electron microscopy. A self-catalyzed vapor-liquid-solid (VLS) process is believed to be responsible for the nucleation and subsequently a vapor-solid process is operative for further longitudinal growth. The photoluminescence spectrum showed a weak UV and a broad green emission peak at 3.25 and 2.49 eV, respectively. The latter was attributed to the presence of zinc interstitial defects. Electrical resistivity as a function of temperature showed activated mechanisms to be present. The electrical response of the ZnO nanonail arrays to different gases (CO, NO2, and H2S) indicated that there could be possible application as gas sensors for this material.     

Size-tunable synthesis of SiO(2) nanotubes via a simple in situ templatelike process

SiO(2) nanotubes with tunable diameters and lengths have been successfully synthesized via a simple in situ templatelike process by thermal evaporation of SiO, ZnS, and GaN in a vertical induction furnace. The structure and morphologies were systematically investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectrometry. Studies found that both the diameters and lengths of the SiO(2) nanotubes can be effectively tuned by simply changing the reaction temperatures. The range of changes was from 30 nm (diameter) and several hundred micrometers (length) at 1450 degrees C to 100 nm (diameter) and 2-10 micrometers (length) at 1300 degrees C. Varying some other experimental parameters results in the formation of additional SiO(2)-based nanostructures, such as core-shell ZnS-SiO(2) nanocables, ZnS nanoparticle filled SiO(2) nanotubes, and fluffy SiO(2) spheres. Based on the observations, an in situ templatelike process was proposed to explain the possible growth mechanism.     

ZnO纳米片/微棒复合体的制备、结构及光学性能

以十六烷基三甲基溴化铵(CTAB)为表面活性剂,以氯化锌和氢氧化钠为原料,在低温水热条件下制备出具有纳米片状接枝结构的ZnO微棒。通过扫描电镜(SEM)、X射线衍射(XRD)、透射电镜(TEM)、光致发光(PL)和拉曼光谱(Raman)对产物的形貌、晶体结构和光学性能进行了表征。结果表明,表面活性剂CTAB对产物最终形貌的形成具有重要作用;微棒表面所接枝的薄片为多晶结构;产物光致发光峰是较少见的弱蓝光发射与强红光发射;同时对这种ZnO微棒的生长机理进行了探讨。