Embedded ring resonators for microphotonic applications

We propose a new type of optical resonator that consists of embedded ring resonators (ERRs). The resonators exhibit unique amplitude and phase characteristics and allow designing compact filters, modulators, and delay elements. A basic configuration of the ERRs with two rings coupled in a point-to-point manner is discussed under two operating conditions. An ERR-based microring modulator shows a high operation speed up to 30 GHz. ERRs with distributed coupling are briefly described as well.     

All-optical wavelength converters for optical switching applications

We present the latest results about all-optical wavelength conversion obtained within the European Union—funded RACE ATMOS project. In particular, solutions based on carrier depletion in Distributed Brag Reflector lasers have reached penalty-free polarization-insensitive operation at up to 2.5 Gbit/s, while solutions based on Semiconductor Optical Amplifiers (SOAS) under cross-gain modulation have been demonstrated at more than 20 Gbit/s. The study of cross-phase modulation in SOAs has also been performed, leading to the monolithic integration of SOAs within an interferometer, according to structures proposed by the project. Penalty-free operation at up to 10 Gbit/s as well as signal reshaping have been obtained with such devices. Besides the study of components, wavelength converters have been used in several demonstrators assessing their maturity and compatibility with photonic-switching applications.     

Slotted microcavity ring resonators for optical storage applications

In this paper, slotted microcavity ring resonators based optical storage devices are proposed and analyzed by means of multiresolution time domain technique. The effect of the structure geometrical parameters on the coupling efficiency, normalized transmission spectra and quality factor has been thoroughly investigated and compared to that of the conventional no-slot microring resonator. The suggested slotted configurations increase the quality factor at a fixed gap size between the central ring and input/output waveguides. In addition, the desired compromise between the coupling efficiency and resonance effect inside the ring can be achieved by mere optimization of the slot geometrical characteristics.     

Large signal analysis of double quantum well transistor laser

In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers.     

Opportunities for wavelength conversion with on‐chip diamond ring resonators

Recent progress in the fabrication of high‐quality synthetic diamond and of diamond waveguide structures has enabled photonics researchers to start exploiting the unique optical properties of diamond for various applications. In this article the promise of on‐chip diamond ring resonators for wavelength conversion based on Kerr and Raman‐resonant four‐wave mixing is numerically demonstrated. After examining to what extent both dispersion‐engineered phase‐matching and “automatic” quasi‐phase‐matching can be established in diamond ring converters, it is shown that such a “double‐matching” approach can yield high conversion efficiencies for a wide range of wavelengths in the near‐infrared/mid‐infrared domain, as well as in the ultraviolet/visible domain.     

Design and fabrication of a SiGe double quantum well structure for g-factor tuning

We propose a double quantum well device structure that allows for g-factor tuning by moving a two-dimensional electron gas between layers with different g-factors by applying a gate voltage. We present self-consistent model calculations showing that the electron wavefunction can be shifted almost completely in between the layers. We produced and characterized the double quantum well structure according the parameters from the optimum model calculations. First results are presented indicating that g-factor tuning really is possible within the envisioned device structure.     

All-optical switching of a single resonance in silicon ring resonators

We theoretically investigate a wavelength-selective all-optical switch using Raman-induced loss in a silicon resonator add-drop filter. We show that picojoule control pulses can selectively modulate and "erase" a single cavity resonance from full extinction to greater than 97% transmission while leaving adjacent resonances undisturbed. Full switching is achievable in less than 300 ps with only a few hundred femtojoule energy dissipation. This represents, to our knowledge, the first scheme for selective modulation of single resonances of an optical cavity.     

Design and implementation of dual-band antennas based on a complementary split ring resonators

A simple dual-band antenna design and implementation method is proposed in this work, based on the equivalent media properties inspired by resonant metamaterial elements. The equivalent circuit model of dual-band patch antennas based on a complementary split ring resonator (CSRR) is presented and validated. The dual-band patch antenna is designed etching a CSRR in the patch of a conventional rectangular microstrip patch antenna. The first resonance is governed by the quasi-static resonance of the CSRR while the second resonance is originated by the rectangular patch. The fact of etching a CSRR on a rectangular patch antenna also produces a miniaturization of a conventional patch antenna. The equivalent circuit model proposed in this letter is sound in order to understand the functionality of dual-band patch antennas based on a CSRR. Good agreement between simulation, equivalent circuit model and experimental results is shown and discussed. These results lead the equivalent circuit model to become a simple and straightforward tool for the design of this type of multiband antennas, of low cost and versatile operation for a broad range of wireless communication systems.     

Wavelength-dependent selective loss for wavelength switching operation of an erbium-doped fiber ring laser

A wavelength-switchable erbium-doped fiber ring laser based on a wavelength-dependent selective loss fiber filter is demonstrated and reported. The filter is based on a long-period fiber grating and bending loss. The operating wavelength of the fiber laser can be switched from a single-wavelength operation at 1565 to 1527 nm.     

A new design of tunable four-port wavelength demultiplexer by photonic crystal ring resonators

A four-channel wavelength demultiplexer based on photonic crystal ring resonators (PCRR), which can be used for photonic integrated circuits, is designed. Dropping efficiency and Q factor of single improved ring are 100% and 842, respectively. In order to achieve the structure of demultiplexer, three improved rings have been used, that every ring has an individual inner rod radius; it means that each ring has a varying resonant wavelength. The results of simulation using finite-difference time-domain (FDTD) method in our proposed structure reveals an average transmitted power higher than 90% for each output port, Channel spacing is about 8 nm and bandwidth for each individual channel is about 2.8 nm. The mean value of the crosstalk between output channels and the area of the proposed structure are about −29 dB and 317 μm², respectively. By changing the radius of inner rods, various wavelengths can be chosen, therefore this device is tunable.     

High-capacity and security packet switching using the nonlinear effects in micro ring resonators

We propose a new design of secured packet switching generated by using nonlinear behaviors of light in a micro ring resonator. The use of chaotic signals generated by the micro ring resonator to form the filtering and packet switching characteristics is described, where the high-capacity and security switching using such form is presented. The key advantage is that the high capacity of communication data can be secured in the transmission link, where the nonlinear penalty of light traveling in the device is beneficial. For instance, the required information can be transmitted and retrieved by using the proposed packet switching scheme. In principle, the chaotic signals are generated by a Kerr effects nonlinear type of light in a micro ring resonator, where the control input power can be specified by the required output filtering signals. The ring radii used range between 10 and 20 μm, κ=0.0225, α=0.5 dB and n₂=2.2×10⁻¹⁵ m²/W. Simulation results obtained have been described based on the practical device parameters. Three forms of the applications have been simulated, the potential of using for the tunable band pass and band stop filters, in which high-capacity packet switching data can be performed, and the fs switching time is plausible.     

用金属小球进行长波量子阱红外探测器的光耦合

针对实验中9.5μm峰值响应波长的n型长波量子阱红外探测器设计运用二维金属小球(铜)阵列作光耦合结构.金属小球阵列均匀填充在绝缘的胶黏剂中，基于惠更斯原理研究二维金属小球阵列体系的光耦合和光吸收，结果表明对9.5μm响应波长的长波量子阱红外探测器，采用周期为3μm，半径为0.9μm左右的金属小球阵列可以获得最佳的光耦合.优化设计后的量子效率(66%)远高于45°磨角耦合的量子效率(38%)，为实验运用金属小球阵列进行长波量子阱红外探测器的光耦合提供了基本的理论依据和详细的优化设计方案.     

基于双SSLR的小型化双通带带通滤波器设计

设计了一种新的具有良好选择性的小型化的双模双通带带通滤波器。该滤波器的谐振结构由两个短路枝节加载谐振器(SSLR)连接到同一个接地金属柱构成。首先通过奇偶模分析方法分析单个SSLR的谐振频率,得到谐振频率的变化规律;然后为了实现滤波器的小型化,将两个SSLR连接到同一个金属柱上并且折叠微带线,通过调节枝节长度分析滤波器通带的变化;设计中使用双枝节分别对谐振器馈电的结构,并且引入了源与负载耦合,可以在上阻带多提供一个传输零点,以提高阻带抑制;最后对滤波器的传输零点进行分析,提高滤波器的选择性。通过上述的分析,对该滤波器进行仿真、加工以及测试,得到最后实物的测试结果与软件的仿真结果较为一致。     

Tunable wavelength converters based switching structure for WDM-TDM hybrid PON

In the evolvement of Passive Optical Network (PON), the performance of hybrid Wavelength-Time Division Multiplexing based PON (WDM-TDM PON) is directly determined by the network architecture. This letter proposes a Tunable Wavelength Converter (TWC) based switching structure (TWC-SS) for WDM/TDM hybrid PON. Using the tunable wavelength converter technology, this Switch Node is designed and introduced into the hybrid WDM/TDM PON. Improved performances brought by the Switch Node on packet loss rate, bandwidth-utilization rate are proved by experimental results.     

近800 nm波长张应变GaAsP/AlGaAs量子阱激光器有源区的设计

张应变GaAs_1-xP_x量子阱是高性能大功率半导体激光器的核心有源区,基于能带结构分析优化其结构参数具有重要的应用指导意义.首先,基于6×6 Luttinger-Kohn模型,采用有限差分法计算了张应变GaAs_1-xP_x量子阱的能带结构,得到了第一子带间跃迁波长固定为近800 nm时的阱宽-阱组分关系,即随着阱组分x的增加,需同时增大阱宽,且阱宽较大时靠近价带顶的是轻空穴第一子带lh₁,阱宽较小时靠近价带顶的是重空穴第一子带hh₁.计算并分析了导带第一子带c₁到价带子带lh₁和hh₁的跃迁动量矩阵元.针对808 nm量子阱激光器,模拟计算了阈值增益与阱宽的关系,得到大阱宽有利于横磁模激射,小阱宽有利于横电模激射.进一步考虑了自发辐射和俄歇复合之后,模拟计算了808 nm量子阱激光器的阱宽与阈值电流密度的关系,阱宽较大时载流子对高能级子带的填充使得阈值电流密度增加,而阱宽较小时则是低的有源区光限制因子导致阈值电流密度升高,因此存在一最佳的阱宽-阱组分组合,可使阈值电流密度达到最小.本文的模拟结果可对张应变GaAs_1-xP_x量子阱激光器的理论分析和结构设计提供理论指导.     

All-optical switching and passive mode-locking based on non-linear polarization rotation in a semiconductor quantum well amplifier

Owing to differences in the selection rules of electron transitions between TE and TM modes in a quantum well structure, and optical amplifier with such a structure manifests linear birefringence and anisotropy of gain-absorption saturation. The anisotropy leads to the evolution of power-dependent polarization in the optical amplifier. We demonstrate experimentally efficient non-linear self-switching based on this phenomenon in an InGaAs/GaAs single quantum well amplifier. Also, by utilizing the non-linear polarization evolution, we show numerically passive mode-locking of a semiconductor laser with a ring cavity.     

Characteristics of an add-drop filter composed of a Mach-Zehnder interferometer and double ring resonators

A planar lightwave circuit (PLC) add-drop filter is proposed and analyzed, which consists of a symmetric Mach-Zehnder interferometer (MZI) combined with double microring resonators. A critical coupling condition is derived for a better box-like drop spectrum. Comparisons of its characteristics with other schemes,such as a MZI with a single ring resonator, are presented, and some of the issues about device design and fabrication are also discussed.     

Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays

Recent trends in infrared detectors are towards large, electronically addressed two-dimensional arrays. In the long wavelength infrared (LWIR) spectral range HgCdTe focal plane arrays (FPAs) occupy a dominant position. However, the slow progress in the development of large LWIR photovoltaic HgCdTe infrared imaging arrays and the rapid achievements of novel semiconductor heterostructure systems have made it necessary to foresee the future development of different material technologies in fabrication large FPAs. Among the competing technologies in LWIR are the quantum well infrared photoconductors (QWIPs) based on lattice matched GaAs/AlGaAs and strained layer InGaAs/AlGaAs material systems. This paper compares the technical merits of two IR detector arrays technologies; photovoltaic HgCdTe and QWIPs. It is clearly shown that LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation (>70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in temperature range below 50 K due to problems involved in HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunnelling, surface and interface instabilities). Even though the QWIP is a photoconductor, several of its properties such as high impedance, fast response time, long integration time, and low power consumption, well satisfy the requirements of fabrication of large FPAs. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for very LWIR (VLWIR) FPA applications in terms of the array size, uniformity, yield and cost of the systems.