Magnetic and electrical properties of Mg1−x CuxO solid solutions and magnetic shielding in Cu-Mg1−x CuxO structures

Mg_1−x Cu_xO solid solutions having an NaCl structure with 0⩽x⩽0.20 are synthesized and Cu-Mg_1−x Cu_xO structures are prepared for superconductivity studies. The magnetic susceptibility χ, electron paramagnetic resonance (EPR), and electrical conductivity of the solid solutions are studied at temperatures of 5–550 K. It is shown that χ ⁻¹(T) obeys the Curie-Weiss law with a paramagnetic Curie temperature Θ close to zero and an effective magnetic moment μ _eff=1.9 μ _B, close to the 1.73 μ _B of a Cu²⁺ ion with spin S=1/2. The width ΔH of the EPR line depends weakly on temperature and increases as x is raised. The volume narrowing of the EPR linewidth ΔH is used to estimate the exchange interaction parameter, 3×10⁻⁴ eV. The g-factor is close to 2 and is temperature independent. The electrical conductivity of Mg_1−x Cu_xO at T=300 K is ≈10⁻¹¹–10⁻¹² Ω⁻¹ cm⁻¹ for x=0 and increases to 10⁻⁵–10⁻⁶ Ω⁻¹ cm⁻¹ for x=0.15–0.20. The conductivity is p-type. Magnetic shielding is observed in Cu-Mg_1−x Cu_xO structures with x=0.15 and 0.20. The possible connection of this phenomenon with interference superconductivity in the contact layer of the structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 293–296 (February 1999)     

Thermal and Auger processes in p-n junctions based on GaInAs/InAs and InAsSbP/InAs heterostructures

A study is made of the excess-energy relaxation processes and the mechanisms responsible for overheating of the active zone of infrared emitters made from nonisoperiodic structures with stressed InGaAs layers and from nearly isoperiodic InAsSbP structures and emitting in the wavelength range λ=2.5–5.0 μm are investigated. The relationship between the overheat ΔT of the active zone of the structure and Auger processes is established for In_1−x Ga_xAs infrared emitters. It is shown that the efficiency of Auger recombination decreases as x increases in the interval 0–0.09, promoting a sharp reduction in ΔT. At x>0.09 the efficiency of CHHS Auger processes decreases exponentially, but an increase in the density of dislocations due to the appreciable value (∼6.9%) of the lattice mismatch parameter causes ΔT to increase, but slowly. Zh. Tekh. Fiz. 67, 68–71 (September 1997) Deceased.     

Electrical resistivity of microinhomogeneous PdMnxFe1−x alloys

The electronic band-structure calculations of the PdFe ferromagnet and the PdMn antiferromagnet performed in this work permit one to conclude that the specific features of the electrical resistivity observed in the ternary PdMn_xFe_1−x alloy system [the deviation from the Nordheim-Kurnakov rule ρ₀(x)∼x(1−x), which is accompanied by a high maximum of residual resistivity (not typical of metals) ρ ₀ ^m ∼220 μΩ cm at x _C∼0.8 and a negative temperature resistivity coefficient in the interval 0.5≤x≤1] are due to the microinhomogeneous (multiphase) state of the alloys and a variation in the band-gap parameter d spectrum caused by antiferromagnetic ordering of a PdMn-type phase. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 2, 2002, pp. 193–197. Original Russian Text Copyright ? 2002 by Kourov, Korotin, Volkova.     

Model of current and optical conductivity switching in YBa2Cu3O7−x films

A model is proposed for the thermal and electrical responses of films of the high-T _c superconducting material YBa₂Cu₃O7_7−x to current and optical pulses. Numerical calculations are compared with experimental data for current pulses of duration 100 μs and laser pulses of duration 0.1 ns; this yields improved data on the thermal conductivity of thin YBa₂Cu₃O7_7−x films (1.5–2 W/m·K) and thermal resistance of the film-substrate contact (5×10⁻⁸m²·K/W) in the neighborhood of the superconducting transition. This model can be used for optimizing the film structure parameters and control regimes for switching elements for pulses lasting longer than 0.1 ns. Zh. Tekh. Fiz. 69, 77–82 (October 1999)     

Magnetoelectric effect and toroidal ordering in Ga2−x FexO3

The field dependence of the magnetoelectric effect and longitudinal magnetostriction of Ga_2−x Fe_xO₃ single crystals is studied in magnetic fields up to 200 kOe in the temperature range from 4.2 to 300 K. It is shown that the magnetoelectric effect in these materials is determined mainly by the toroidal moment T and is not related to magnetostriction, as was previously theorized. A new method for determining the toroidal moment by measuring the electric polarization in a strong magnetic field is proposed. The value of the toroidal moment of the unit cell in Ga_1.15Fe_0.85O₃ is calculated: T=(T _a ,0,0), where T _a =24.155μ _B Å per unit cell. Experimental data are analyzed using a theory of toroidal spin ordering, which gives good agreement with experiment. Zh. éksp. Teor. Fiz. 114, 263–272 (July 1998) Deceased.     

X-ray magnetic circular dichroism at IrL2,3 edges in Fe100−x Ir x and Co100−x Ir x alloys: Magnetism of 5d electronic states

The formation of induced 5d magnetic moment on Ir in Fe_100−x Ir _x (x=3, 10 and 17) and Co_100−x Ir _x (x=5, 17, 25 and 32) alloys has been investigated by X-ray magnetic circular dichroism (XMCD) at Ir L_2,3 absorption edges. Sum rule analysis of the XMCD data show that the orbital moment of Ir is in the range of −0.071(2)μB to −0.030(1)μB in Fe-Ir alloys and −0.067(2)μB to 0.024(1)μB in Co-Ir alloys. We find that the total moment of Ir in Fe-Ir alloys is approximately 1/5 of the total 3d moment on Fe at all the three compositions. In contrast, the total moment on Ir in Co-Ir alloys varies between 1/6 to 1/16 of the 3d moment on cobalt. The observed trends of Ir moments and the role of interatomic exchange interactions in 5d moment formation are discussed.     

Nanocomposite and nanostructured superhard Ti-Si-B-N coatings

Electron microscopy, x-ray diffraction analysis, and micro-and nanohardness measurements were used to investigate the interrelations between the fine structure and the variations in strength properties of nanostructured and nanocomposite Ti-Si-B-N coatings with high oxygen and carbon contents. It has been shown that under the conditions of low-temperature (T = 200°C) coating deposition, a two-level grain structure forms with {200} texture and grains 0.1–0.3 μm in size fragmented into subgrains 15–20 nm in size. As the silicon content is increased, textureless coatings with the crystal phase grain size less than 15 nm and high amorphous component or coatings of amorphous-crystalline structure are produced. At coating deposition temperatures of 400–450°C, a nanocomposite structure with a grain size d = 10–15 nm and no texture is observed. For all test compositions and conditions of coating production, a Ti _1−x Si _x N crystal phase with the lattice parameter a = (0.416–0.420) ± 0.001 nm has been detected. For optimum coating compositions and synthesis conditions, the hardness is over 40–50 GPa. It has been supposed that superhardness can be attained with multiphase grain-boundary interlayers of thickness more than 1 nm. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 13–23, October, 2007.     

Magnetic properties of TlCoS2 and TlCoSe2 layered compounds

The TlCoS₂ and TlCoSe₂ compounds are synthesized and their magnetic properties are studied in the temperature range 77–300 K. It is established on the basis of x-ray diffraction analysis that these compounds possess a hexagonal structure. Examination of the magnetization and paramagnetic susceptibility has shown that TlCoS₂ and TlCoSe₂ are ferrimagnets. The Curie temperature for TlCoS₂ is equal to 112 K, and T _C for TlCoSe₂ is less than 77 K. The effective magnetic moments are equal to 4.6 μ_B (TlCoS₂) and 4.85 μ_B (TlCoSe₂) and agree well with the theoretical values. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 8, 2000, pp. 1449–1450. Original Russian Text Copyright ? 2000 by Sadykhov, Kerimova, Asadov, Veliev.     

Magnetic and transport properties of Ln1–xSrxCoO3 perovskite materials (Ln= La, Nd, Gd) prepared by low-temperature synthetic routes

We have used three soft-chemistry methods for the efficient preparation of Ln_1−xSr_xCoO₃ samples, adapting the combustion and the liquid-mix methods for the synthesis of the Ln = La and Gd compounds, respectively, and the preparation of Nd_1−xSr_xCoO₃ by the nitrate decomposition method. We report the magnetic and electrical properties of these relatively small particle-size materials, specially in the case of the Ln = La and Ln = Nd series (d≈0.2 μm and 0.5 μm, respectively), and we compare them to those displayed by the corresponding compounds prepared at higher temperatures. The compounds here obtained are ferromagnetic for x≥0.15 when Ln = La and for x≥0.20 when Ln = Nd and Gd. Their resistivity decreases as the doping degree increases. And, very interestingly, for compositions 0.20<x≤0.45, when Ln = La, and for x=0.40, when Ln = Nd, they show M-I transitions as the temperature rises. These are very sensitive to the application of electrical current and its polarity and the presence of magnetic fields, displaying peculiar behaviors. Paper presented at the 5th Euroconference on Solid State Ionics, Benalmádena, Spain, Sept. 13–20, 1998.     

Weak ferromagnetism in copper metaborate CuB2O4

CuB₂O₄ single crystals have been grown and their magnetic and resonance properties have been investigated for the first time. The temperature dependence of the susceptibility was found to contain features at T=21 and 10 K. The CuB₂O₄ single crystal transformed at T=21 K to a weakly ferromagnetic state. The sharp drop in susceptibility at T<10 K is caused by a transition of the magnetic system of CuB₂O₄ to an antiferromagnetic state. The effective magnetic moment of the Cu₂₊ ion, determined from the high-temperature part of the magnetic susceptibility, is 1.77 μ _B. The room-temperature g factors are, respectively, 2.170 and 2.133 for magnetic field parallel and perpendicular to the c axis of the crystal. The antiferromagnetic resonance parameters in the weakly ferromagnetic and antiferromagnetic phases were measured. Fiz. Tverd. Tela (St. Petersburg) 41, 1267–1271 (July 1999)     

Local-moment formation and metal-nonmetal transition in Ca1−x Y x VO3 and Ca1−x Y x TiO3

Electron-doped metallic states of Ca_1−x Y _x VO₃ and Ca_1−x Y _x TiO₃ change into non-metallic states around x∼0.4 and 0.6, respectively. The residual resistivity in the metallic states increases with increasing effective magnetic moment or coefficient of T ² term of resistivity. The effective moment reaches ∼ 0.5 μ_B/molecule in Ca_1−x Y _x VO₃ and also in Ca_1−x Y _x TiO₃ near the metal-nonmetal phase boundary. In these metallic states. ∼ 10% of 3d atoms seem to have large localized magnetic moments. In electron-doped metallic sample of Ca_1−x Y _x VO₃, the temperature dependence of resistance shows no resistance-minimum. However, weak negative magneto-resistance is observed for the sample with x=0.2 up to 50 Tesla at 4.2 K.     

Measurement of the differential and integral distribution of diffuse x-ray scattering intensity from defects in thin strained layers

Double-and triple-crystal diffractometry have been used to study structural perfection of a ∼1 μm-thick Ga_1−x In_xSb_1−y As_y epitaxial film (x=0.9, y=0.8) on GaSb. It is shown that scattering from samples of this system can be divided into coherent and diffuse. The arrangement of reciprocal-lattice points of the film and substrate in the two-dimensional intensity distribution for asymmetrical reflections argues for the absence of elastic-strain relaxation. No dislocation networks are formed, and the diffuse scattering is produced by Coulomb-type defects. Localization of diffuse scattering in reciprocal space suggests that these defects reside in the epitaxial film. The diffuse-scattering distribution in asymmetrical reflections is shown to be anomalous; namely, it extends in a direction parallel to the surface and is split into two maxima. Schemes have been proposed and realized for measuring integral distributions of diffracted intensity along the surface and perpendicular to it, and their potential for studying diffuse scattering from defects is explored. Fiz. Tverd. Tela (St. Petersburg) 39, 1188–1193 (July 1997)     

Method for measuring integrated sensitivity of solar cells and multielement photoconverters using an X-Y scanner

We describe a method for automated measurement of the integrated sensitivity of solar cells (SCs) and multielement photoconverters (MPCs) using an experimental apparatus including a Pentium III personal computer (PC), an HP-34401A digital multimeter (DM), a stabilized radiation source (SRS), a controllable focusing system, an X-Y positioning device based on CD-RW optical disk storage devices. The method provides high accuracy in measuring the size of photosensitive areas of the solar cells and multielement photoconverters and inhomogeneities in their active regions, which makes it possible to correct the production process in the development stage and during fabrication of test prototypes for the solar cells and multielement photoconverters. The radiation power from the stabilized radiation source was ≤1 W; the ranges of the scanning steps along the X, Y coordinates were 10–100 μm, the range of the transverse cross sectional diameters of the focused radiation beam was 10–100 μm, the measurable photocurrents were 10⁻⁹ A to 2 A; scanning rate along the X, Y coordinates, ≤100 mm/sec; relative mean-square error (RMSE) for measurement of the integrated sensitivity of the solar cells, 0.2 ≤ γS _int ≤ 0.9% in the ranges of measurable photocurrents 1 mA ≤ I_ph ≤ 750 mA and areas 0.1 ≤ A ≤ 25 cm² for number of measurements equal to ≤ 2· 10⁵; instability of the radiation power (luminosity) ≤ 0.08% for 1 h or ≤ 0.4% for 8 h continuous operation; stabilized power range for the stabilized radiation source, 10⁻²–10² W. The software was written in Delphi 7.0. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 670–675, September–October, 2006.     

Optical properties of glasses activated by the compounds CuInSe2 and CuInTe2 and by the solid solutions CuInSe2x Te(1−x)

The spectral properties of amorphous media synthesized on the basis of glasses of the system SiO₂-CaO-R₂O (R=Na, K, Li), the ternary compounds CuInSe₂, and CuInTe₂, and solid solutions based on them have been investigated. It is shown that the absorption limit of the media investigated lies within 1.4–1.6 μm. It is noted that the three alkali ions constituting the system exert a favorable influence on the state and optical properties of the amorphous media activated with the compound CuInTe₂ and with the solid solutions CuInSe_2xTe_(1−x), where x≤0.5. The influence of the concentration of the solid solution CuInSeTe (x=0.5) on the optical properties of the amorphous media is investigated. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 132–134, January–February, 2000.     

Magnetic structure of Er<Subscript>5</Subscript>Ge<Subscript>3</Subscript> at 4.2 K

A symmetry analysis of the possible magnetic structures of Er₅Ge₃ in the ground state is performed using the results of measurements of elastic magnetic neutron scattering at 4.2 K. It is shown that the minimum discrepancy factor R _m ≈9.5% corresponds to a modulated collinear magnetic structure in which the magnetic moments of erbium atoms are oriented along the a ₃ axis of the unit cell of the crystal structure and induce an antiferromagnetic longitudinal spin wave (AFLSW). The magnetic structure is characterized by the wave vector k=2π(0, 0, μ /a ₃) (where μ≈0.293) and the modulation period λ≈3.413a ₃. The magnetic ordering temperature T _N ≈38 K is determined from the temperature dependence of the intensity of magnetic reflections. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1653–1659. Original Russian Text Copyright ? 2003 by Vokhmyanin, Dorofeev.     

Formation of high-T c phases of the system Bi-Pb-Sr-Ca-Cu-O in a fluxed KCl melt

The influence of the conditions of synthesis and annealing on the ratio of the volumes and the temperature T _c ⁿ at which transition to the superconducting state begins is investigated on the basis of diamagnetic susceptibility measurements and x-ray phase analysis for bismuth 2212 and 2223 phases obtained from solution in a KCl melt. It is found that the value of T _c ⁿ for the 2212 phase decreases as the temperature and the holding time are increased in synthesis. The 2212–2223 transition in the fluxed KCl melt takes place in the presence of an oxygen deficiency, and the width of the transition interval to the superconducting state of the 2223 phase depends on the cooling rate of the fluxed melt after isothermal holding and also on subsequent annealing in air. Temperatures T _c ⁿ =107 K, 90 K, and 20 K are observed for unannealed crystals of the 2223 phase with average dimensions 50×50 μm. Air annealing leads to oxygen saturation of their lattice, and T _c ⁿ =107 K throughout the entire structure of the crystal. Fiz. Tverd. Tela (St. Petersburg) 39, 1761–1763 (October 1997)     

Thermodynamic and kinetic properties of an icosahedral quasicrystalline phase in the Al-Pd-Tc system

The properties of a quasicrystalline phase in the Al-Pd-Tc system are studied for the first time. X-ray investigations demonstrate that the quasicrystalline phase in the Al₇₀Pd₂₁Tc₉ alloy has a face-centered icosahedral quasi-lattice with parameter a=6.514 ?. Annealing experiments have revealed that this icosahedral phase is thermodynamically stable. The heat capacity of an Al₇₀Pd₂₁Tc₉ sample is measured in the temperature range 3–30 K. The electrical resistivity and magnetic susceptibility are determined in the temperature range 2–300 K. The electrical resistivity is found to be high (600 μΩ cm at room temperature), which is typical of quasicrystals. The temperature coefficient of electrical resistivity is small and positive at temperatures above 50 K and negative at temperatures below 50 K. The magnetic susceptibility has a weakly paramagnetic character. The coefficient of linear contribution to heat capacity (γ=0.24 mJ/(g-atom K²)) and the Debye characteristic temperature (Θ=410 K) are determined. The origin of the specific features in the vibrational spectrum of the quasicrystals is discussed. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 12, 2000, pp. 2113–2119. Original Russian Text Copyright ? 2000 by Mikheeva, Panova, Teplov, Khlopkin, Chernoplekov, Shikov.     

Determination of the depth of formation of magnetooptical effects in CoNi films

The optical constants of CoNi films with magnetic properties that are nonuniform across their thickness are determined in reflected light by two methods, viz., optical and magnetooptical measurements. The values of the parameters L=λ/4πk and Z ₀=λ/8n, one of which (specifically, the one which has the smaller value at a given value of λ) determines the depth of formation of reflective magnetooptical effects (l _mo) according to the current theories, are calculated on the basis of the values obtained for the optical constants n and k of the films (λ is the wavelength of the light used, and n and k are the refractive index and the absorption coefficient of the magnet). It is established for the CoNi films investigated that l _mo is determined by L and varies from about 200 to 300 ? in the range 0.33 μm⩽λ⩽0.83 μm. In CoNi films, which are inhomogeneous across their thickness and are characterized by significant variation of the magnetic properties over distances ∼l _mo, variation of the form of the magnetization curves determined by measuring the equatorial Kerr effect is observed as λ increases. Zh. Tekh. Fiz. 68, 69–72 (February 1998)     

Electrical properties of the high-pressure phases of gallium and indium tellurides

A study has been made of the resistance ρ, the thermopower S, and magnetoresistance MR of Ga₂Te₃ and α-In₂Te₃ single crystals at pressures P up to 25 GPa. It is found that the resistance ρ and |S| sharply decrease at ∼0–5 and 1.5–3 GPa, respectively. The semiconductor-metal phase transitions in the temperature range from 77 to 300 K are established from the sign reversal of the temperature coefficient of ρ to occur at P>4.4 and >1.9 GPa. The values S ≈+(10–20)μ V/K for the metallic phases with a Bi₂Te₃-type structure agree with those for liquid In₂Te₃ and Ga₂Te₃. Negative MR is revealed in In₂Te₃ at P≈1.9 GPa. No MR is observed in Ga₂Te₃ up to 25 GPa. The variation of the electronic structure of In₂Te₃ and Ga₂Te₃ under pressure is discussed. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 6, 2000, pp. 1004–1008. Original Russian Text Copyright ? 2000 by Shchennikov, Savchenko, Popova.     

Autosolitons in electron-hole plasma in p-Ge

The self-organization of an electron-hole plasma (EHP) heated by an electric field in pure p-Ge samples at T = 77 K has been studied experimentally. The derived current-voltage characteristics (CVCs) and the distributions of the electric field and IR emission of the hot carriers along the samples show that the segments of a steep rise or the S-shaped segments of the CVCs in samples with n-p junctions are related to the formation of longitudinal thermal-diffusion autosolitons (AS_‖); as a result, thin (d = 2–20 μm in diameter), melted-through current channels appear. Such AS_‖ are formed at high EHP densities (n ≥ 1 × 10¹⁶ cm⁻³), when the electron-hole scattering is dominant, and at electron temperatures T _e = (2–4.5)T ₀ (T ₀ is the lattice temperature). The saturation segments and the N-shaped segments in the CVCs are attributable to the generation of transverse thermal-diffusion high-field autosolitons (AS_⊥) in the form of narrow strata with electric field strengths = 1–20 kV cm⁻¹. High-field AS_⊥ are formed at EHP densities n = 5 × 10¹³−1 × 10¹⁶ cm⁻³, when the electron-phonon scattering is dominant, and at electron temperatures T _e ∼ Θ ≥ 5T ₀ (Θ is the Debye temperature). The generated longitudinal and transverse autosolitons have high temperatures (T _e ≥ 1000 K) and reduced carrier densities and can exist simultaneously in different parts of the sample. Original Russian Text ? M.N. Vinoslavskiĭ, P.A. Belevskii, A.V. Kravchenko, 2006, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 129, No. 3, pp. 477–492.