Properties of high-k Ti1−xSixO2 gate dielectric layers prepared at room temperature

High-k Ti_1−xSi_xO₂ gate dielectric layers were prepared at room temperature by RF magnetron sputtering using SiO₂ and TiO₂ targets to investigate their applicability to transparent thin-film transistors as well as metal-oxide-semiconductor field-effect transistors. Based on XRD and XPS analyses, it was found that, regardless of the deposition time, the Ti_1−xSi_xO₂ gate dielectric layers had more stable Si-based phases with stronger Si-O bonds with increasing SiO₂ RF power. As SiO₂ RF power increased, the capacitance of the dielectric layers decreased due to the higher fraction of the Si-based phases, and the leakage current decreased, dominantly because of the decrease in oxygen vacancies due to the formation of stoichiometric SiO₂. The Ti_1−xSi_xO₂ gate dielectric layers exhibited high transparency above 80% and moderate bandgap of 4.1-4.2 eV, which can be applied to transparent thin-film transistors.     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Low-temperature photoluminescence of ion-implanted SiO2:Sn+ films and glasses

Low-temperature photoluminescence spectroscopy with pulsed synchrotron excitation is applied to study the regularities of excitation and relaxation of both point defects and nanoparticles formed by tin implantation into SiO₂ films and glasses. It has been found that tin implantation followed by air and nitrogen annealing yields the formation of α-Sn nanoclusters and nonstoichiometric SnO _x nanoparticles, while a stable phase of SnO₂ does not appear. Alternative channels of luminescence excitation are revealed for nanoclusters, including energy transfer from excitons and electron-hole pairs of the host SiO₂ matrix.     

Laser-induced congruent forward transfer of SiO x -layers

Laser-induced forward transfer of inorganic oxide films is demonstrated using the example of SiO _x -layers. SiO _x with x<2 is strongly UV-absorbing, so that excimer lasers are suited for inducing transfer. When the distance between donor and receiving substrate is reduced to zero, congruent transfer is possible; i.e. the deposited geometry corresponds exactly to the ablated spot. This zero-distance configuration is accomplished by using a polydimethylsiloxane (PDMS) film as the receiving substrate, which is cast directly on the SiO _x -coated fused silica donor substrate. After curing of the PDMS, the SiO _x -layer is irradiated by a single 25 ns-KrF-excimer laser pulse through the donor substrate. At a fluence of 300 to 600 mJ/cm² predefined areas of a 830 nm thick SiO _x -layer are cleanly transferred to the PDMS-substrate, i.e. the irradiated parts of the layer stick to the PDMS-surface after peeling it off. This way spot arrays or stripes with lateral dimensions of a few μm as well as free-standing grids can be generated. By multipulse exposure, the fabrication of stacks or bridges is possible.     

Effects of electron tunneling in photophysics of quantum-sized luminescent nanosilicon

The paper deals with the processes of photoburning and dark recovery of the photoluminescence (PL) yield of a “core-shell”-type hybrid nanoparticles Si/SiO _x (npSi/SiO _x ) after exposure to laser light with a wavelength of 405 nm and power density of 0.05–1 W/cm². The PL of npSi/SiO _x occurs after excitation of nanocrystalline Si core and subsequent energy transfer to the luminescent oxygen-deficient centers (ODC) in the SiO _x shell of a nanoparticle. These photoburning effects linearly depend on the power density of the exciting laser light, and the dynamics of the photoburning of PL is significantly non-exponential: the burning rate strongly drops during the exposure. The stop of laser exposure of npSi/SiO _x is accompanied by a slow dark recovery of the quantum efficiency of PL up to its initial level. We have demonstrated the possibility of controlling the photosensibility of npSi/SiO _x through changing the electron affinity of the environment. We have also proposed a physical mechanism that explains the observed photoburning and subsequent dark recovery of npSi/SiO _x PL based on the existence of “traps” for electrons residing in the SiO _x shell, where the electrons come as a result of tunneling from the excited ODC. The limiting time for this process is the lifetime of PL of ODC ranging from 10^?5 to 10^?4 s. The drop of the burning rate during exposure is caused by a strong difference in tunneling probabilities for different pairs of “ODC-trap”. The dark back tunneling of an electron from a trap to the original ODC occurs significantly (7–10 orders of magnitude) slower than the direct tunneling due to higher energy barrier.

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Graphical abstract Dark recovery of photoluminescence efficiency of Si nanoparticles following laser burning in three surrounding media differing in electron affinity

     

Novel blue-emitting phosphor Sr2.979Eu0.021Al10−xBxSiO20 (x=0, 0.25, 0.5, 0.75 and 1) for PDP applications

A series of blue-emitting phosphor Sr_3−xEu_xAl₁₀SiO₂₀ (x=0-0.025, insteps of 0.0025) have been synthesized and the emission intensity is found to be maximum for x=0.02. The effect of boron substitution in the Al site in Sr₃Al₁₀SiO₂₀:Eu²⁺ phosphor has been investigated to improve the blue emission of Eu²⁺. A series of boron-substituted compositions have been made Sr_2.979Eu_0.021Al_10−xB_xSiO₂₀ (x=0, 0.25, 0.5, 0.75 and 1) and studied their photoluminescence (PL) property under UV and VUV excitation. The X-ray diffraction patterns of Sr_2.979Eu_0.021Al_10−xB_xSiO₂₀ (x=0, 0.25, 0.5, 0.75 and 1) show single phase formation and all the compositions crystallize in monoclinic structure with space group C2/m. Blue emission (due to Eu²⁺ ion) has been found in all compositions and the emission intensity is found to be maximum for x=0.25 and it is ∼2 times higher than that of x=0 composition (PL intensity 62% vs. commercial BAM). Hence, this phosphor could be possible potential candidate for blue light-emitting phosphor for plasma display panel (PDP) applications.     

Electroluminescence and its excitation mechanism of SiOx films deposited by electron-beam evaporation

Blue electroluminescence from SiO_x films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiO_x films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields.     

Radiation-stimulated modification of C60 films on Si-oxide surfaces

The electronic structure of C₆₀/SiO_x/Si(1 0 0) interface was studied by photoemission (valence-bands, C 1s, and Si 2p core levels) and near-edge X-ray absorption fine structure (C 1s threshold) spectroscopies. It was concluded that the SiO_x/Si surface is non-reactive with respect to the interaction with C₆₀. The exposure of the C₆₀/SiO_x/Si system under non-monochromatic synchrotron radiation causes modification of the electronic structure of this system. It is explained by polymerization of the C₆₀ molecules and arising a strong ionic-like interaction of the polymerized C₆₀ with the SiO_x surface. Annealing of this system up to temperatures of 550–625 °C leads to complete desorption of the C₆₀ molecules from the non-irradiated sample areas while the modified by radiation fullerenes remain attached to the substrate.     

Physical and electrical properties of band-engineered SiO2/(TiO2) x (SiO2)1−x stacks for nonvolatile memory applications

In our study, the physical properties of (TiO₂) _x (SiO₂)_1?x , including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO₂/(TiO₂) _x (SiO₂)_1?x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO₂) _x (SiO₂)_1?x can be controlled by adjustment in the composition of the (TiO₂) _x (SiO₂)_1?x films. Ti-silicate film with TiO₂:SiO₂ cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950 °C. The tunneling current of the band-engineered SiO₂/(TiO₂) _x (SiO₂)_1?x stacked tunnel barrier was larger than that of a single SiO₂ barrier under a higher external bias, while the tunneling current of a SiO₂/(TiO₂) _x (SiO₂)_1?x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO₂/(TiO₂) _x (SiO₂)_1?x is slightly larger than that for single SiO₂.     

Compatibility of glass textures with E-beam evaporated polycrystalline silicon thin-film solar cells

For polycrystalline silicon thin films on glass, E-beam evaporation capable of high-rate deposition of amorphous silicon (a-Si) film precursor up to 1 μm/minute is a potentially low-cost solution to replace the main stream a-Si deposition method—plasma enhanced chemical vapour deposition (PECVD). Due to weak absorption of near infrared light and a target of 2 μm Si absorber thickness, glass substrate texturing as a general way of light trapping is vital to make E-beam evaporation commercially viable. As a result, the compatibility of e-beam evaporation with glass textures becomes essential. In this paper, glass textures with feature size ranging from ～200 nm to ～1.5 micron and root-mean-square roughness (Rms) ranging from ～10 nm to 200 nm are prepared and their compatibility with e-beam evaporation is investigated. This work indicates that e-beam evaporation is only compatible with small smooth submicron sized textures, which enhances J _sc by 21 % without degrading V _oc of the cells. Such textures improve absorption-based J _sc up to 45 % with only 90 nm SiN _x as the antireflection and barrier layer; however, the enhancement degrades to ～10 % with 100 nm SiO _x +90 nm SiN _x as the barrier layer. The absorption-based J _sc is abbreviated by J _sc(A), which is deduced by integrating the multiplication product of the measured absorption and the AM1.5G spectrum in the wavelength range 300–1050 nm assuming unity internal quantum efficiency at each wavelength. This investigation is also relevant to other thin-film solar cell technologies which require evaporating the absorber onto textured substrate/superstrate.     

Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

A new semiconductor superlattice with tunable electronic properties and simultaneously with mobility enhancement of electrons and holes

A new artificial semiconductor superlattice with tunable electronic properties and simultaneously with significant mobility enhancement of both 2-dimensional electrons and 2-dimensional holes has been prepared by molecular beam epitaxy. The structure consists of a periodic sequence ofn-Al _x Ga_1?x As/i-GaAs/n-Al _x Ga_1?x As/p-Al _x Ga_1?x As/ i-Ga.As/p-Al _x Ga_1?x As stacks with undoped Al _x Ga_1?x As spacers between the intentionally doped Al _x Ga_1?x As and the nominally undopedi-GaAs layers. In this newheterojunction doping-superlattice we have for the first time achieved a spatial separation of electrons and holes by half a superlattice period as well as simultaneously a spatial separation of both types of free carriers from their parent ionized impurities. These unique properties are demonstrated by the strongly increased tunability of bipolar conductivity with bias. In addition, the observed temperature dependence of Hall mobilities provides direct evidence for a strong mobility enhancement of both electrons and holes in the spatially separated 2-dimensional accumulation channels formed in the lower band gap material.     

Blue photoluminescence from SiGeSiO2 co-sputtered films

A blue photoluminescence band centered at 440 nm was observed from SiGeSiO₂ co-sputtered films at room temperature. This band gains intensity after the film was annealed at a temperature around 900°C in N₂ atmosphere. From analysis of photoluminescence excitation, Raman and X-ray photoelectron spectra, it turns out that the luminescence is probably from some interfacial state between Si_1−xGe_x nanoparticles and the SiO₂ matrix.     

Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers

The impact of hydrogen desorption on the electrical properties of TiO_x on crystalline silicon (c-Si) with SiO_y interlayers is studied for the development of high-performance TiO_x carrier-selective contacts. Compared with the TiO_x/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm² are obtained by using SiO_y interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiO_x interlayers is lower than that of heterocontacts without a SiO_y interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiO_x/c-Si and TiO_x/SC2-SiO_y/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiO_x/SC2-SiO_y/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.     

Preparation and photoluminescence properties of silica-coated CuO nanowires

We have fabricated cupric oxide (CuO)-core/silica (SiO _x )-shell nanowires by using a two-step process: thermal oxidation and sputtering. The structure and photoluminescence (PL) properties of the core/shell nanowires has been investigated by using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and PL analysis techniques. The CuO cores and the SiO _x shells of the as-synthesized nanowires have crystalline monoclinic CuO and amorphous SiO _x structures, respectively. The PL emission intensity of the CuO-core/SiO _x -shell nanowires has been increased but the emission peak position has not been nearly shifted by annealing in a nitrogen atmosphere, whereas the emission peak position has been shifted a lot from 510 to around 650 nm as well as the emission intensity has been increased by annealing in an oxygen atmosphere. In addition, the origin of the PL enhancement in the CuO-core/SiO _x -shell nanowires by annealing and the growth mechanism of the CuO nanowires have been discussed.     

Microstructural and magnetic studies of L10 FePt–SiO2 nano-composite thin film with columnar structure for perpendicular magnetic recording

(Fe₅₀Pt₅₀)_100−x-(SiO₂)_x films (x=0–30 vol%) were grown on a textured Pt(0 0 1)/CrRu(0 0 2) bilayer at 420 °C using glass substrates. FePt(0 0 1) preferred orientation was obtained in the films. Interconnected microstructure with an average grain size of about 30 nm is observed in the binary FePt film. As SiO₂ is incorporated, it precipitates as particles are dispersed at FePt grain boundaries. When the content of SiO₂ is increased to 13 vol%, columnar FePt with (0 0 1) texture separated by SiO₂ is attained. The FePt columns have a length/radius ratio of 2:1. Additionally, the mean grain size is reduced to about 13 nm. The development of this well-isolated columnar structure leads to an enhancement in coercivity by about 44% from 210 to 315 kA/m. As the SiO₂ content exceeds 20 vol%, a significant ordering reduction is found accompanied by a transformation of preferred orientation from (0 0 1) to (2 0 0) and the columnar structure disappears, resulting in a drastic degradation in magnetism. The results of our study suggest that isolated columnar, grain refined, (0 0 1)-textured FePt film can be achieved via the fine control of SiO₂ content. This may provide useful information for the design of FePt perpendicular recording media.     

Effect of Eu3+ concentration on microstructure and photoluminescence of Sr2SiO4:Eu3+ phosphors prepared by microwave assisted sintering

In this paper, effect of Eu³⁺ doping concentrations on microstructure and photoluminescence of Sr₂SiO₄ phosphors was investigated. The Sr_2?xSiO₄:xEu³⁺ phosphors with x=0.05, 0.1, 0.2, 0.3 were synthesized by microwave assisted sintering at 1200 °C for 60 min in air. X-ray powder diffraction analysis confirmed the formation of pure Sr₂SiO₄ phase without second phase or phases of starting materials irrespective of the adding amount of Eu³⁺. From scanning electron microscopy image, it is found that with more Eu³⁺ ions introduced to Sr₂SiO₄, the shape of the particles is not much different from each other, but the particle size decreases significantly from 1 to 2 μm (when x=0.05) to less than 500 nm (when x=0.3). The emission spectrum was located obviously at 617 nm as the excitation spectrum at λ_ex=395 nm, and it had best emission intensity when x=0.1.     

n-Type microcrystalline silicon oxide layer and its application to high-performance back reflectors in thin-film silicon solar cells

Light trapping is a key issue in improving the efficiency of thin-film Si solar cells, and using a back reflector material plays a critical role in improving a cell's light-trapping efficiency. In this study, we developed n-type microcrystalline silicon oxide (n-μc-SiO_x) films that are suitable for use as back reflectors in thin-film silicon solar cells. They exhibit a lower refractive index and lower absorption spectra, especially at long wavelengths of >700 nm, than conventional ZnO:Al materials, which are beneficial for this application. The n-μc-SiO_x films were prepared by the PECVD (plasma-enhanced chemical vapor deposition) method and applied to the fabrication of back reflectors in μc-Si:H solar cells. We also characterized the changes in cell performance with respect to the refractive index, conductivity, and thickness of the n-μc-SiO_x back reflectors. The novel back reflector boosts the total current density by up to 3.0% with the help of the enhanced long-wavelength response. It also improves open circuit voltage (V_oc) and fill factor (FF), which may be attributed to the reduced shunt current caused by the anisotropic electrical characteristics of the n-μc-SiO_x layer. Finally, we could achieve a conversion efficiency for the hydrogenated microcrystalline silicon (μc-Si:H) solar cells of up to 9.3% (V_oc: 0.501 V, J_sc: 27.4 mA/cm², FF: 0.68) using the n-μc-SiO_x back reflector.     

Improved photoluminescence and afterglow in CaTiO3:Pr with addition of nanosized SiO2

Enhancement of the ¹D₂-³H₄ red emission in CaTiO₃:Pr³⁺ with addition of nanosized SiO₂ fabricated by a solid state reaction method is reported. The dynamical processes for the improvement of red emission were systematically investigated using photoluminescence (PL) and PL excitation spectra, and diffused reflectance spectra as well as time decay patterns of PL and persistent afterglow. Higher efficiency of energy transfer from CaTiO₃ host to the activator Pr³⁺ due to the improvement of crystallinity by SiO₂ addition was discussed in comparison with that of the SiO₂ free sample. The enhancement of persistent afterglow after the cessation of excitation in SiO₂ added CaTiO₃:Pr³⁺ was also analyzed by theoretically fitted results.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.