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1.
用传统的固相烧结工艺,制备了钼掺杂铁电陶瓷样品SrBi4Ti4O15(SBTi)铁电陶瓷SrBi4-2x/3Ti4-xMoxO15(x=0.00,0.003,0.012,0.03,0.06,0.09).X射线衍射的结果表明,样品均为单一的层状钙钛矿结构相,Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现,样品晶粒为片状,随掺杂量的增加,晶粒逐
关键词:
4Ti4O15')" href="#">SrBi4Ti4O15
Mo掺杂
剩余极化
居里温度 相似文献
2.
用传统固相烧结法制备了Sr2Bi4-xDyxTi5 O18(SBDT-x, x=0—0.20)陶瓷样品. x射线衍射分析表明, 微量的Dy掺杂没有影 响Sr2Bi4Ti5O18(SBTi) 原有的层状钙钛 矿结构. 通过研究样品的介电特性, 发现Dy掺杂减小了材料的损耗因子, 降低了样品铁电- 顺电相转变的居里温度. 铁电性能测量结果表明, 随Dy含量的增加, SBDT-x系列样品的剩余 极化先增大, 后减小. 当Dy掺杂量为0.01时, 剩余极化达到最大值, 约为20.1 μC·cm-2. 掺杂引起剩余极化的变化, 与材料中缺陷浓度、内应力以及晶格畸变程度等因 素有关, 是多种作用机理相互竞争的结果. (Bi2O2)2+ 层通常被看作是绝缘层和空间电荷库, 对材料的铁电性能起关键作用. 掺杂离子进入(Bi2O2)2+层会导致铁电性能变差.
关键词:
2Bi4Ti5O18陶瓷')" href="#">Sr2Bi4Ti5O18陶瓷
Dy掺 杂
铁电性能
居里温度 相似文献
3.
利用传统的固相反应分别在1250℃,1300℃,1350℃.烧结条件下制备出钙钛矿结构的La0.9Sr0.1FeO3陶瓷样品.样品的XRD粉末衍射结果显示不同烧结温度的La0.9Sr0.1FeO3陶瓷样品都是单相的正交结构,同时晶胞体积随着烧结温度的升高而减小.从样品的SEM结果看出,随着烧结温度的升高,晶粒逐渐变大,并且晶粒间的空隙逐渐减小,样品更加致密.在室温到800℃的
关键词:
铁酸镧陶瓷
热电性能
烧结温度 相似文献
4.
用溶胶-凝胶法制备了Bi1-xYbxFeO3(0≤x≤0.2)粉晶样品,并用X射线衍射光谱和拉曼光谱对其结构进行了研究. 结果表明, 在x=0.1~0.125, 发生了结构相变, 由菱形R3c结构变为正交Pnma结构,对应的应该是从铁电相到顺电相的转变. 在结构相变边界,磁化强度达到最大值. 其原因是在低浓度掺杂区域,随着Yb3+的掺杂浓度的增大,BiFeO3的自旋螺旋结构受到抑制,部分未被抵消的磁矩被释放出来,到了相变边界,自旋螺旋结构受到的抑制达到最大,磁矩被完全释放出来. 随着x的继续增大,磁化强度开始逐渐减小,这是由于逐渐形成了良好的反铁磁序排列. 相似文献
5.
用固相工艺制备了Bi6Fe2-xCoxTi3O18 (BFCT-x, x=0, 0.2, 0.6, 0.8, 1.0, 1.2, 1.6, 1.8, 和2.0)多铁陶瓷样品, 样品X射线谱分析发现, 随着Co含量的增加, 样品晶格常数出现了先增大后减小的变化. 室温下, BFCT-0.6样品呈现出相对较高的饱和磁化强度, 2Ms约为4.49 emu/g, BFCT-1.0具有最高的剩余磁化强度, 2Mr约为0.89 emu/g. Co含量在0.2 ≤x≤qslant 1.2范围内, 随着Co含量的增加样品顺磁–铁磁相变温度从752 K降至372 K. 小量的Co改善了样品的铁电性能, 当x=0.6时样品样品的铁电性能最佳, 随着含量增大样品铁电性能下降, 但当x >1.2时样品的铁电性能又得到了改善. 相似文献
6.
7.
通过MOD法在Si(100)和Pt(111)/Ti/SiO2/Si基片上制备出LaNiO3 ( LNO)薄膜.再通过修 正的Sol-gel法,在Pt(111)/Ti/SiO2/Si,LNO/Si(100)和LNO/Pt/Ti/SiO2< /sub>/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明,L NO薄膜具有(100)择优取向的类钙钛矿结构;PZT薄膜均具有钙钛矿结构,且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向,在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明,在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大.
关键词:
3薄膜')" href="#">LaNiO3薄膜
PZT铁电薄膜
择优取向
剩余极化强度 相似文献
8.
按x=0.00,0.10,0.25,0.50,0.75和1.00,采用固相烧结工艺,制备了不同La掺杂量的SrBi4-xLaxTi4O15的陶瓷样品. 用x射线衍射对其微结构进行了分析,并测量了铁电、介电性能.结果发现,La掺杂未改变SrBi4Ti 4O15的晶体结构.随掺杂量的增加,样品的矫顽场(Ec)下降,剩余极化(2P关键词:
4-xLaxTi4O15')" href="#">SrBi4-xLaxTi4O15
La掺杂
铁电性能
相变温度
弛豫铁电 相似文献
9.
以传统的固相反应法制备了Bi0.5Ba0.5FeO3陶瓷,并采用X射线衍射仪、扫描电子显微镜、直流阻温测试仪和交流阻抗分析仪测试了Bi0.5Ba0.5FeO3陶瓷的微结构和电性能.分析结果表明:Bi0.5Ba0.5FeO3陶瓷具有立方钙钛矿结构,颗粒尺寸约1.0 μm;在16—280 ℃范围内,Bi0.5Ba0.5FeO3陶瓷表现出明显的负温度系数热敏效应,其热敏常数、活化能分别为6490 K及0.558 eV;介电温谱揭示,在280 ℃下Bi0.5Ba0.5FeO3陶瓷材料没有出现相变行为.对于交流阻抗谱,采用3个串联的RQ(R与Q为并联)等效部件来拟合分析,拟合结果表明拟合数据与实验数据高度匹配,且这3个等效部件分别代表晶界、晶粒和晶壳的贡献.3个部件中,晶粒对陶瓷电阻阻值的影响最大,晶壳贡献次之,晶界最小,且3个部件电阻值都显示出负温度系数效应.在25—115 ℃范围内,电学模量虚部峰频与阻抗虚部峰频始终不匹配,意味着Bi0.5Ba0.5FeO3陶瓷体内部一直表现出局域导电机理.
关键词:
0.5Ba0.5FeO3陶瓷')" href="#">Bi0.5Ba0.5FeO3陶瓷
电性能
阻抗分析 相似文献
10.
利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.
关键词:
铁电性能
4Ti3O12薄膜')" href="#">Bi4Ti3O12薄膜
3.25La0.75Ti3O12薄膜')" href="#">Bi3.25La0.75Ti3O12薄膜
sol-gel法
La掺杂 相似文献
11.
In the multiferroic materials, the dielectric and magnetic properties are closely correlated through the coupling interaction between the ferroelectric and magnetic order. We attempted to determine the magnetoelectric coupling coefficient from the temperature dependences of the dielectric permittivity for multiferroic Bi5Ti3FeO15. Multiferroic ceramics Bi5Ti3FeO15 belong to materials of the Aurivillius-type structure. Multiferroic ceramics Bi5Ti3FeO15 was synthesized via sintering the Bi2O3 and Fe2O3 mixture and TiO2 oxides. The precursor material was ground in a high-energy attritorial mill for 5 hours. This material was obtained by a solid-state reaction process at T = 1313 K. We investigated the temperature dependences of the dielectric permittivity for the different frequencies. From the dielectric measurements, we determined the temperature of phase transition of the ferroelectric-to-paraelectric type at about 1013 K. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified. 相似文献
12.
The samples Bi5FeTi3O15 (BFTO) and Bi5Fe0.5Co0.5Ti3O15 (BFCT) were prepared by incorporating BiFeO3 (BFO) and BiFe0.5Co0.5O3 (BFCO) into the host Bi4Ti3O12 (BTO) using the solid state reaction technique. The Raman shift data indicate that the as-prepared materials are of the four-layer Aurivillius phase with an orthorhombic symmetry. At room temperature (RT) and under a driving electric field of 230 kV/cm, the half substitution of Fe by Co ions is found to result in the increase in the remanent polarization by about 35% and simultaneously the decrease in by about 41%, respectively. The magnetic moment at least tripled its value by substituting half Fe ions by Co ions. The of BFCT is about three thousand times the value of BFTO. 相似文献
13.
Kangli Min Fengzhen Huang Xiaomei Lu Yi Kan Junting Zhang Song Peng Yaoyang Liu Jie Su Chao Zhang Zijian Liu Jinsong Zhu 《Solid State Communications》2012,152(4):304-306
KNb0.95Co0.05O3 (KN–Co) ceramic was prepared via a solid-state reaction method, and the effect of cobalt dopant on the structural, electric, and magnetic properties was studied. The KN–Co ceramic with polycrystalline perovskite structure exhibited ferromagnetic and ferroelectric properties simultaneously at room temperature, and the coupling of them was confirmed by a large magnetocapacitance effect (about 13%) near the Curie temperature. The possible causes for the magnetism and magnetoelectric properties are discussed. 相似文献
14.
Lü Qing WANG ShuFang LI LongJiang WANG JiangLong DAI ShouYu YU Wei FU GuangSheng 《中国科学:物理学 力学 天文学(英文版)》2014,57(9):1644-1648
High temperature electrical and thermal transport properties, that is, electrical conductivity, Seebeck coefficient and thermal conductivity, of CdO ceramics have been investigated. Because of the good electrical properties and low thermal conductivity, the dimensionless figure-of-merit ZT of the CdO ceramics reaches 0.34 at 1023 K. This value is comparable to the best reported ZT for the n-type oxide ceramic thermoelectric materials and remains as potential to be further improved by porosity controlling or nanostructuring. 相似文献
15.
The 0.6(Bi1-xLax)FeO 3-0.4SrTiO 3(x = 0,0.1) multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization(Pr) and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6(Bi0.9La0.1)FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ~ 0.135 emμ/g and ferroelectricity with Pr ~ 5.94 μC/cm 2 at room temperature. 相似文献
16.
基于密度泛函理论结合投影缀加平面波方法, 通过VASP软件包执行计算, 在分别考虑电子自旋阻挫共线与非共线的磁性结构基础上, 研究了正交结构下多铁性DyMnO3材料在不同磁性构型下的晶格参数、总能、磁性、电子态密度和能带结构. 计算过程中选取广义梯度近似赝势, 同时使用局域自旋密度近似+U方法处理强关联作用下3d电子的计算结果. 计算结果表明: Mn离子为A型反铁磁态磁性构型的情况下能量最低结构最为稳定, Dy稀土离子磁性甚微, 可忽略不计; 当考虑电子自旋为非共线排列时, 正交DyMnO3的总能提高、磁矩增大; 从电子结构图分析可知, 材料为间接能隙绝缘体, 能隙宽度约为0.38 eV, 加U后为1.36 eV, 导致晶格畸变的主要原因为Mn-3d与O-2p电子之间强烈的杂化作用.
关键词:
多铁性
反铁磁
密度泛函理论
非共线 相似文献
17.
A series of La and Mn co-doped Bi5Ti3FeO15 (BLTFMO) thin films were prepared by spin-coating deposition route. X-ray diffraction, atomic force microscopy and scanning electron microscopy were used to characterize the structures of these BLTFMO thin films. Ferromagnetic properties are obtained as the La-doping content is 0, 0.1, 0.2, and 0.3 with the transition temperature of 127.2 K, 65.1 K, 48.1 K, and 7.9 K, respectively. Well-defined ferroelectric loops are found in all these BLTFMO films, and a higher remnant polarization of 27.84, 24.21 and 24.02 μC/cm2 is obtained in the 0.1, 0.2 and 0.3 La-doped films, respectively. A weak dielectric dispersion for the BLTFMO without La-doping, a strong one in 0.1, 0.2, 0.3 and 0.4 La doped films as indicated by the appearance of a dielectric loss peak, and a weak dispersion in 0.6, 0.8 and 1 La doped ones are demonstrated. 相似文献
18.
In this work,we report the influence of Co-doping on the electronic band structure,dielectric and magnetic properties of La0.1Bi0.9Fe1-xCoxO3 ceramics.X-ray photoelectron spectroscopy investigation shows that Co dopant can shift the valence band spectrum and core-level lines of constituent elements towards higher bind energy regions simultaneously increase the concentration of oxygen vacancies in ceramics.The effects of dopant are discussed with focus given to the Co-doping induced enhancement of electrical conductivity and resistive switching phenomena. 相似文献
19.
《Current Applied Physics》2015,15(11):1545-1548
In type-I multiferroics, where ferroelectricity and magnetism arise from different origins, the explicit measurement of magnetoelectric effect is commonly prohibited due to the weak magnetoelectric coupling. From our investigation of magnetic and dielectric properties in a perovskite PbFe0.5Ti0.25W0.25O3, we have directly demonstrated magnetic-field-driven change of dielectric constant in a highly non-linear fashion. Our result offers a potential utilization of magnetoelectric functionality in type-I multiferroics. 相似文献