B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

室温下将130 keV,5x1014 cm-2 B离子和55 keV,1x1016 cm-2 H离子单独或顺次注入到单晶Si中,采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT) 研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示,B 和H 离子顺次注入到单晶Si 可有效减少(111) 取向的H板层缺陷,并促进了(100) 取向的H板层缺陷的择优生长。SPAT 观测结果显示,在顺次注入的样品中,B 离子平均射程处保留了大量的空位型缺陷。以上结果表明,B离子本身及B 离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。Abstract:Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPATmeasurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect shouldbe attributed to the role of both B and B implanted induced vacancy-type defects.     

Raman Light Scattering in Silicon with the Crystal Structure Damaged by Implantation of Carbon Ions

Optics and Spectroscopy - Raman scattering spectra from silicon whose crystal lattice is damaged by implantation of carbon ions with an energy of 40 keV and dose 5 × 1016 cm–2 have been...     

Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions

Technical Physics - We report on the results of first practical observations of sputtering of the Si surface during the implantation with Ag+ ions with an energy of 30 keV depending on irradiation...     

Microscopic and Macroscopic Structures of Carbon Nanotubes Produced by Pyrolysis of Iron Phthalocyanine

By pyrolysis of iron phthalocyanine (FePc), either in a patterned or non-patterned fashion, under an Ar/H₂ atmosphere, we have demonstrated the large-scale production of aligned carbon nanotubes perpendicular to the substrate surface useful for building devices with three-dimensional structures. Depending on the particular pyrolytic conditions used, carbon nanotubes with a wide range of microscopic structures having curved, helical, coiled, branched, and tube-within-tube shapes have also been prepared by the pyrolysis of FePc. This, coupled with several microfabrication methods (photolithography, soft-lithography, self-assembling, micro-contact transfer, etc.), has enabled us to produce carbon nanotube arrays of various macroscopic architectures including polyhedral, flower-like, dendritic, circular, multilayered, and micropatterned geometries. In this article, we summarize our work on the preparation of FePc-generated carbon nanotubes with the large variety of microscopic and macroscopic structures and give a brief overview on the perspectives of making carbon nanotubes with tailor-made microscopic/macroscopic structures, and hence well-defined physicochemical properties, for specific applications.     

Investigation of Fe-Mg-Alloys Produced by Ion Implantation

Iron and magnesium are insoluble elements with each other and there is no phase diagram. However, it is possible to produce artificial alloys by ion implantation, in this study by iron implantation into magnesium. Samples are investigated by conversion electron Moessbauer spectroscopy, Auger electron spectroscopy and x-ray diffraction. While at low doses gaussian shaped iron profiles and paramagnetic doublets as Mössbauer spectra are obtained, the iron concentration reaches at the highest dose 90 at.-% in maximum and the Mössbauer spectrum shows a dominant ferromagnetic fraction. The x-ray diffraction pattern let conclude that a dilated α-iron lattice is formed. Microhardness of all samples is clearly increased due to the implantation.     

Iron Halide Species Produced by Laser-Evaporation

Iron halide species were produced by the reaction of laser-evaporated iron atoms with halogen-containing reactant gas, and isolated in low-temperature matrices to obtain their Mössbauer spectra. Iron fluoride (Fe₂F₆, FeF₃ and Fe₂F₄) and iron iodide (FeI₂ and Fe₂I₄) were produced by the reaction of laser-evaporated iron atoms with sulfur hexafluoride SF₆ and methyl iodide CH₃I, respectively. The yields of the products varied depending on the concentration of reactant gas in the Ar matrix. Molecular orbital calculations were performed in order to confirm their assignments.     

Magnetic Properties of Thin Metal-Polymer Films Prepared by High-Dose Ion-Beam Implantation of Iron and Cobalt Ions into Polyethylene Terephthalate

Thin metal-polymer composite films have been prepared by high-dose ion-beam implantation of Fe⁺ and Co⁺ ions into polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2 · 10¹⁶ to 4 · 10¹⁷ cm⁻² have been performed, with the ion current density of 4 μA/cm². The effects of implantation dose on the film morphology and crystal structure have been investigated via atomic force and magnetic force microscopy and X-ray diffraction. The magnetic properties of synthesized structures have been studied by ferromagnetic resonance and with a vibrating-sample magnetometer. It was established that the properties of ion-implanted samples strongly depend on both the implantation dose and the type of implanted ions. The implantation dose at which the magnetic phase is formed for iron-implanted samples is significantly lower than that for cobalt-implanted ones. At high implantation doses due to polymer sputtering metal-containing layers are formed close to the sample surface for both ions. In this dose range the magnetic properties of implanted samples changed dramatically due to particle oxidation. The coercivity of synthesized layers reaches 180 and 300 Oe for iron- and cobalt-implanted samples, respectively. Authors' address: Vladimir Yu. Petukhov, Kazan Physical-Technical Institute, Sibirskii trakt 10/7, 420029 Kazan, Russian Federation     

Sputtering of Silicon and Silicon Dioxide by Low-Energy Ions of Dense Nitrogen and Argon Plasma

The results are presented from sputtering silicon and silicon dioxide with low-energy ions of argon and nitrogen plasma from induction high-frequency discharges. It is found that the rate of silicon sputtering with argon ions is 1.3 times faster than the rate of sputtering of its compounds. At the same time, upon bombarding the surfaces of samples with nitrogen ions, the rate of sputtering of silicon dioxide is twice as fast as the rate of sputtering of silicon. This effect can be explained by modification of the silicon’s surface, and by the existence of a mechanism of the chemical sputtering of silicon dioxide upon irradiating samples with nitrogen ions.     

电感耦合等离子体-原子发射光谱法测定铁精矿粉中的氧化硅

通过系统考察铁精矿粉的分解方法以及熔剂的配比实验,确定铁精矿粉分解完全的实验方法,并进行了光谱干扰、放置时间、基体效应、精密度、准确度和对照等实验.与分光光度法和重量法相比此方法准确、快速.试样熔融方法与铁矿石的国家标准分析方法相比更适合于铁精矿粉的分析.测定范围在0.20％-10.00％之间.     

硅团簇Si+n(n=1-3)注入Si单晶性质的研究

利用硅团簇Si+n(n=1-3)注入Si单晶, 在Si单晶内形成一些单空位和双空位, 通过其光吸收谱观察到了带电状态为V02的双空位缺陷, 以及团簇效应对缺陷的影响, 正电子湮灭及TRIM程序模拟计算都表明团簇效应的存在.     

ICP-AES测定三元复合驱采出液中硅含量分析研究与应用

应用ICP-AES测定三元复合驱采出液中硅含量,选用Thermo Elemental ICAP 6300型电感耦合等离子体-原子发射光谱仪,选择251.6nm谱线,测得方法检出限为0.0111mg.L-1,加标回收率为91.0%—100.6%,相对标准偏差为0.58%,方法精密度、准确度较高,检测线性范围宽。该方法操作简便,测定速度较快,共存干扰元素少。当采出液中表面活性剂浓度在500mg/L以下时,对检测结果基本没有影响;矿化度较高的油田水及聚合物浓度大小对测定有影响,但经过处理后都能满足检测要求。可应用于三元复合驱采出液中硅含量的测定。     

原子发射光谱法测定镁砂中的硅和铁

镁砂是生产烧结焊剂的重要原料。本文采用原子发射光谱分析法，通过加入合金的缓冲剂，并选择合理的内标，成功地对镁砂中的硅和铁进行了测定。     

X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

Technical Physics - Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of...     

Morphology and Phase Composition of Particles Produced by Electro-Discharge-Machining of Iron

Towards producing metallic particles of controlled size and spherical shape, which are of technological importance, we have collected in the filters of an electro-discharge-machine (EDM) the material ejected from the surface of EDM iron pieces. The conditions of machining were varied for kerosene and water as dielectrics, using a discharge current of 25 A and duration times of 16 and 3072 μs for kerosene and of 32, 384 and 768 μs for water, respectively. Scanning electron microscopy was used to assess the effect of the time of discharge on the size of the particles. Mössbauer spectroscopy and X-ray diffraction revealed that for kerosene EDM particles only cementite-like carbides of diverse stoichiometry were formed. While no oxide was found for kerosene spheres, the analyses showed that besides the main fraction of α-Fe, a small percentage of wüstite (and traces of hematite for the 384 μs sample) formed on the water EDM ones.     

Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride

Silicon oxide (SiO₂) and silicon oxynitride (SiO_xN_y) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted.     

采用硅离子注入改进SIMOX埋氧的抗总剂量辐射性能研究

采用硅离子注入工艺对注氧隔离(SIMOX)的绝缘体上硅(SOI)材料进行改性, 在改性材料和标准SIMOX材料上制作了部分耗尽环型栅NMOS/SOI晶体管, 并对其进行⁶⁰Co γ射线总剂量辐照试验. 通过背栅的I-V特性表征晶体管的总剂量辐照特性. 结果表明, 在埋氧层注硅可以降低NMOS/SOI受辐照引起的背栅阈值电压漂移, 提高埋氧层的抗总剂量能力.     

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect engineering for SiO2 precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen （SIMOX）. Cavities axe created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120 keV 8.0 ×1016 cm 2 0 ions. The Q ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectionM transmission electron microscopy （XTEM）, Fourier transform infrared absorbance spectrometry （FTIR） and atomic force microscopy （AFM） measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.     

H等离子体处理对Si中He注入空腔引起的效应

室温下分别采用40,160和1550 keV的He离子注入单晶Si样品到相同的剂量5×10¹⁶cm^-2,部分经He注入过的样品然后再分别接受高密度H等离子体处理.利用透射电子显微镜分析比较了随后800°C高温退火引起的空腔形成.结果表明,附加的H等离子体处理对空腔生长所产生的效应明显地依赖于He离子的能量.对于40 keV He离子注入,空腔的形成和热生长似乎不受H等离子体处理的影响,而对于160 keV He离子注入,附加的等离子体处理则促进了空腔的生长并伴随着空腔分布区域的变窄.对于1550keV He离子注入,H等离子体处理对空腔产生的效应介于40和160 keV注入情况之间.结合H等离子体处理在Si中所引起的缺陷的产生及其热演变过程对实验结果进行了讨论.