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1.
高折射率玻璃微珠折射率的测量   总被引:8,自引:4,他引:4  
用激光作为测量光源,利用激光经玻璃微珠一次或多次内部反射后出射,形成最小偏转角的原理,对高折射率玻璃微珠折射率的测量进行了理论分析和实验测试.比较了不同内反射次数对测量精度的影响.该测量方法尤其适用于已在微珠列阵逆向反光膜上大量使用的、折射率位于1.8~2.4之间的高折射率玻璃微珠折射率的测量,较传统方法具有简便、快捷和安全的特点.经分析和对不同类型微珠样品的实测比较,获得了测量精度优于1%的结果.  相似文献   

2.
本文提出一种基于全介电微散射体的散射阵列结构逆向设计方法,用以实现散射电场强度整形.该方法基于空域傅里叶变换与角谱变换,从给定目标区域处期望实现的散射场强分布出发,逆向求得所需的感应源,再利用电磁感应源理论,逆向设计微散射体阵列,且只需通过解析计算便能够快速地求取出微散射体阵列的电磁参数值分布.基于提出的逆向设计方法,文中提供了三维情况下的具体算例,实现了给定方形面目标区域的散射场强整形.理论计算结果与全波仿真结果符合良好,表明本文提出的逆向设计方法具有可行性与有效性.  相似文献   

3.
提出一种基于光纤阵列的激光光斑时空分布测量方法,采用在多层石英平板上制作V型槽并层叠石英光纤阵列的方法,获得了具有较高抗激光损伤能力和空间分辨力的光纤阵列取样器,实现了激光光斑的空间分布取样。给出了光纤阵列的取样原理、取样器结构和大倍数光强衰减的设计。实验结果表明:光纤阵列抗激光损伤能力优于10 kW/cm2(50 s),系统空间分辨力优于3 mm,测量误差小于3%。  相似文献   

4.
通过脉冲电沉积,外延生长出小单元长度的Bi2Te3/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi2Te3/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.  相似文献   

5.
通过建立数值模型,分析了垂直腔面发射激光器相干耦合阵列单元数量、单元间距、单元间相位差对光束质量及偏转角度的影响.仿真结果表明,单元数量越多,发散角越小;单元间距越小,旁瓣强度越小;单元间相位差越大,偏转角度越大.因此,设计相干阵列时,需要尽量减小单元间距,增大阵列规模,实现单元间大相位差的控制.实验制备了3单元相干耦合阵列,通过分离电极实现了单元注入电流的独立控制以及单元间相位差的控制,最终实现二维方向上的光束操控.  相似文献   

6.
本文基于小光点扫描,在国内首次提出了一种测试小F数衍射微透镜阵列光学性能的方法.利用光通信用半导体激光器和探测器建立了一套测试系统,并对所研制的大阵列,小单元尺寸的多相位菲涅耳衍射微透镜阵列的衍射效率和点扩散函数进行了测试.结果表明,衍射微透镜实际衍射光斑比理论衍射受限光斑扩展不大,8相位和16相位石英微透镜的衍射效率分别高达80.2%和87.5%,说明本实验室对多相位的设计理论和制作工艺已基本掌握,满足应用的要求.  相似文献   

7.
为提高计算生成集成成像实时交互显示性能和灵活性,构建与集成成像再现系统结构一致的集成光场视见模型,通过该模型为单元图像阵列中每个像素生成一条逆向追踪的光线,使用光线追踪技术并行渲染光线为单元图像阵列像素着色.实验结果表明,顶点数为565 880的点云模型、面数为977 308的含纹理网格模型在透镜数为22×13、视点数为175×175的4K显示系统上显示帧率40fps以上,并实现了缩放、移动、旋转、显示微调等交互功能.该方法摆脱了虚拟相机模型,降低了算法复杂度,利于实现实时交互,能够应用于基于不同分布形式透镜阵列的集成成像显示系统.  相似文献   

8.
提出了一种基于单准直透镜和光纤阵列的阵列准直器, 深入研究了此种方案的光路无胶和光路有胶的两种实现方式; 并基于高斯光束传输矩阵和q参数相关理论, 从理论上详细地计算、推导了各变量之间的关系, 并进行了模拟仿真及实验验证, 得到了理论和实验一致的结果. 对两种实现方式的结构及封装设计也进行了初步的摸索和实验, 并制作出了性能良好的阵列准直器. 理论和实验表明, 该方案具有易加工、低成本、易封装、性能优等特点, 也易于扩展成多维阵列准直器, 可为可重构光分插复用器系统和光交叉连接系统的发展提供强有力的器件支撑.  相似文献   

9.
薄膜微区域变形的微标记阵列检测方法研究   总被引:1,自引:0,他引:1  
本文应用阵列微压痕标记技术完成了薄膜表面微孔洞缺陷邻域变形检测. 检测中通过应用纳米压痕和微区域放电技术, 制作微标记阵列和微孔洞缺陷, 并在数字化显微系统下完成微区域点阵变形检测, 进而实现微区域小变形测量. 研究了微标记点的信息提取与表征方法, 讨论了微标记法在薄膜材料性能检测中的可行性及其检测性能.  相似文献   

10.
张立波  程锦荣 《计算物理》2007,24(6):740-744
采用巨正则蒙特卡罗方法模拟常温、中等压强下单壁氮化硼纳米管阵列的物理吸附储氢,重点研究压强、纳米管阵列的管径和管间距对单壁氮化硼纳米管阵列物理吸附储氢的影响.计算结果表明,氮化硼纳米管阵列的储氢性能明显优于碳纳米管阵列,在常温和中等压强下的物理吸附储氢量(质量百分数)可以达到和超过美国能源部提出的商业标准.并给出相应的理论解释.  相似文献   

11.
The dynamic magnetic properties of soft-ferromagnetic thin film element arrays are strongly influenced by long range interelement magnetostatic interaction. In order to estimate the effective array dipolar field a quantitative model is presented, which is based on the superposition of stray fields that arise from the neighborhood of a reference element. Kittel's equation, that describes the magnetodynamics, is generalized for magnetically saturated arrays by additional array dipolar field terms. Measurements of the magnetodynamic response of quasi-saturated arrays with a rectangular base agree with theoretical predictions. Thus, our model allows the estimation of the frequency of the uniform precessional mode in mesoscopic thin film arrays with non-negligible magnetostatic interaction.  相似文献   

12.
We propose here a technique for precision deposition of single atoms or ordered arrays of atoms onto a substrate by first suspending the atoms as ions within a superfluid 4He film adhering to the substrate via van der Waals forces. The ions are held within the film by a combination of image forces and an externally applied electric field. Turning off the electric field causes the ions to fall toward the substrate and bond to the substrate surface. If the applied electric field comes from a scanned probe above the film, individual atoms can be deposited with atomic precision. A uniform applied electric field can be used to deposit a crystal of ions onto the substrate.  相似文献   

13.
浦宣  程友峰  谢少毅  杨丹  廖成 《强激光与粒子束》2020,32(6):063005-1-063005-8
介绍了一种基于互耦补偿矩阵(MCCM)的迭代快速傅里叶变换(IFFT)技术,并将其应用于宽角度扫描相控阵的低旁瓣综合中。首先,在所提出的综合方法中,将互耦补偿矩阵引入到IFFT技术中以考虑阵元间的互耦效应,使考虑互耦的阵列远场重新满足方向图乘积原理。然后,提出了一款基片集成波导背腔结构的宽波束天线单元,该天线能够同时激励起TE110与TE210两种模式从而展宽其工作频带且具有宽波束性能,并且基于此单元分别建立了阵元数为35,75,100的宽角度扫描相控阵天线。最后,利用所提出的IFFT技术对这三个相控阵进行低旁瓣综合。与基于有源单元方向图遗传算法的对比结果表明,在-60°到60°的扫描范围内均能实现低旁瓣电平,并且IFFT优化算法具有更快的速度。  相似文献   

14.

The paper presents an analytical method for calculating and analyzing the quality of 3-D acoustic fields of multielement phased arrays used in noninvasive ultrasound surgical devices. An analytical solution for the far field of each of its elements is used when calculating the array field. This method significantly accelerates calculations while preserving the high accuracy of results as compared to conventional direct numerical integration. Radiation from typical phased arrays is calculated using this approach, and the quality of their dynamic focusing is analyzed. Undesired diffraction effects caused by electronic focus steering are considered: an amplitude decrease in the main maximum and the appearance of grating lobes. The quality of dynamic focusing of the acoustic fields of two practically interesting arrays with a quasi-random element distribution (256 and 1024 elements, respectively), as well as of the regular array consisting of 256 elements is compared. In addition as well, a study is made of how the dimensions of the array elements and their spatial distributions affect the dimensions of the areas in which dynamic focusing is possible without occurrence of strong grating lobes and significant decrease in pressure amplitude at the main focus.

  相似文献   

15.
The sensitivity of far‐field Raman micro‐spectroscopy was investigated to determine quantitatively the actual thickness of organic thin films. It is shown that the thickness of organic films can be quantitatively determined down to 3 nm with an error margin of 20% and down to 1.5 nm with an error margin of 100%. Raman imaging of thin‐film surfaces with a far‐field optical microscope establishes the distribution of a polymer with a lateral resolution of ~400 nm and the homogeneity of the film. Raman images are presented for spin‐coated thin films of polysulfone (PSU) with average thicknesses between 3 and 50 nm. In films with an average thickness of 43 nm, the variation in thickness was around 5% for PSU. In films with an average thickness of 3 nm for PSU, the detected thickness variation was 100%. Raman imaging was performed in minutes for a surface area of 900 µm2. The results illustrate the ability of far‐field Raman microscopy as a sensitive method to quantitatively determine the thickness of thin films down to the nanometer range. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   

16.
对基于矩形阵列的高功率微波二维密集阵阵列合成进行了研究。仿真分析了均匀矩形栅格阵列的远场方向图,结果表明采用密集阵可以实现高效的、具有确定主波束的空间功率合成。并分析了阵元间距及阵元初相位对阵列空间功率合成的影响,结果表明:阵元间距越小,栅瓣越少,主波束宽度越宽,具有确定主波束的临界距离越小;当目标高度超过阵临界距离时,阵元初相位相差越小合成效率越高,阵列初相位分布范围超过/2时,阵列得不到确定的主波束,进行阵列设计时应充分考虑阵元间距及初相位对阵列合成的影响。  相似文献   

17.
In the field of biomedicine magnetic beads are used for drug delivery and to treat hyperthermia. Here we propose to use self-organized bead structures to isolate circulating tumor cells using lab-on-chip technologies. Typically blood flows past microposts functionalized with antibodies for circulating tumor cells. Creating these microposts with interacting magnetic beads makes it possible to tune the geometry in size, position and shape. We developed a simulation tool that combines micromagnetics and discrete particle dynamics, in order to design micropost arrays made of interacting beads. The simulation takes into account the viscous drag of the blood flow, magnetostatic interactions between the magnetic beads and gradient forces from external aligned magnets. We developed a particle-particle particle-mesh method for effective computation of the magnetic force and torque acting on the particles.  相似文献   

18.
In the paper we consider size effects on phase transitions and polar properties of thin antiferroelectric films. We extend the phenomenological approach proposed by Kittel for thin films allowing for gradient (correlation) energy and depolarization field energy. Surface piezoelectric effect as well as misfit strain appear due to lattice constants mismatch between the film and its substrate. Direct variational method is used to derive the free energy with renormalized coefficients depending on the film thickness. Obtained free energy expression allows the calculation of phase diagrams and all electro-physical properties by a conventional minimization procedure. Approximate analytical expressions for the paraelectric–antiferroelectric–ferroelectric transition temperature dependences on film thickness, polarization gradient coefficient, and extrapolation lengths were obtained. The thickness dependence of the electric field critical value that causes antiferroelectric–ferroelectric phase transition was calculated. Under favorable conditions the antiferroelectric phase at first transforms into ferroelectric one and then into paraelectric phase with the decrease of the film thickness. Proposed theoretical consideration explains the experimental results obtained in antiferroelectric PbZrO3 thin films.  相似文献   

19.
We use the functional integral technique of Edwards and Lenard to solve the statistical mechanics of a one-dimensional Coulomb gas with boundary interactions leading to surface charging. The theory examined is a one-dimensional model for a soap film. Finite-size effects and the phenomenon of charge regulation are studied. We also discuss the disjoining pressure for such a film. Even in the absence of boundary potentials we find that the presence of a surface affects the physics in finite systems. In general we find that in the presence of a boundary potential the long-distance disjoining pressure is positive, but may become negative at closer interplane separations. This is in accordance with the attractive forces seen at close separations in colloidal and soap film experiments and with three dimensional calculations beyond mean field. Finally, our exact results are compared with the predictions of the corresponding Poisson–Boltzmann theory which is often used in the context of colloidal and thin liquid film systems.  相似文献   

20.
徐萌  晏建民  徐志学  郭磊  郑仁奎  李晓光 《物理学报》2018,67(15):157506-157506
电子信息技术的迅速发展对磁电功能器件的微型化、智能化、多功能化以及灵敏度、可靠性、低功耗等都提出了更高的需求,传统的块体磁电功能材料已日渐不能满足上述需求,而层状磁电复合薄膜材料同时具有铁电性、铁磁性和磁电耦合等多种特性,因此能满足上述需求且有望应用于新一代磁电功能器件.层状磁电复合材料不仅具有非常丰富的物理现象和效应,而且在弱磁探测器、多态存储器、电写磁读存储器、电场可调低功耗滤波器、移相器、天线等微波器件中也具有广阔的应用前景,因而受到材料科学家和物理学家广泛的关注和研究.在层状磁电复合材料中,功能薄膜/铁电单晶异质结因其制备简单、结构设计和材料选择灵活以及电场调控方便和有效,最近十余年引起了越来越多的研究人员的兴趣.目前,以具有优异铁电和压电性能的(1-x)PbMg_(1/3)Nb_(2/3)O_3-PbTiO_3(PMN-PT)单晶作为衬底,构建功能薄膜/PMN-PT异质结已成为国内外多铁性复合薄膜材料研究领域的重要方向之一.相比于其他国家,我国科学家无论在发表的文章数量还是在文章被引用次数方面都处于领先地位,表明我国在功能薄膜/PMN-PT单晶异质结方面的研究卓有成效.迄今为止,研究人员已构建了锰氧化合物/PMN-PT、铁氧体/PMN-PT、铁磁金属/PMN-PT、稀磁半导体/PMN-PT、发光材料/PMN-PT、二维材料/PMN-PT、多层薄膜/PMN-PT、超导薄膜/PMN-PT等多种类型的异质结,在理论研究和实验方面都取得了丰富的研究成果.本文对基于PMN-PT压电单晶的磁电复合薄膜材料的研究进展进行了总结:简要介绍了与功能薄膜/PMN-PT异质结相关的研究论文发表现状;介绍了PMN-PT单晶在准同型相界附近的相图和应变特性;按照功能薄膜材料所属的体系对异质结进行了分类,并选取部分代表性的研究成果,介绍了材料的磁电性能和内涵的物理机制;最后就目前有待解决的问题和未来可能的应用方向进行了总结和展望.  相似文献   

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