Interacting bosons in an optical lattice

A strongly interacting Bose gas in an optical lattice is studied using a hard‐core interaction. Two different approaches are introduced, one is based on a spin‐1/2 Fermi gas with attractive interaction, the other one on a functional integral with an additional constraint (slave‐boson approach). The relation between fermions and hard‐core bosons is briefly discussed for the case of a one‐dimensional Bose gas. For a three‐dimensional gas we identify the order parameter of the Bose‐Einstein condensate through a Hubbard‐Stratonovich transformation and treat the corresponding theories within a mean‐field approximation and with Gaussian fluctuations. This allows us to evaluate the phase diagram, including the Bose‐Einstein condensate and the Mott insulator, the density‐density correlation function, the static structure factor, and the quasiparticle excitation spectrum. The role of quantum and thermal fluctuations are studied in detail for both approaches, where we find good agreement with the Gross‐Pitaevskii equation and with the Bogoliubov approach in the dilute regime. In the dense regime, which is characterized by the phase transition between the Bose‐Einstein condensate and the Mott insulator, we discuss a renormalized Gross‐Pitaevskii equation. This equation can describe the macroscopic wave function of the Bose‐Einstein condensate in the dilute regime as well as close to the transition to the Mott insulator. Finally, we compare the results of the attractive spin‐1/2 Fermi gas and those of the slave‐boson approach and find good agreement for all physical quantities.     

Wigner crystallization and a resonance exchange mechanism for electrons localized in an amorphous insulator with a high trap density

The possibility of Wigner crystallization of electrons in an amorphous insulator with a high trap density is discussed. A new exhange interaction mechanism is proposed, based on resonance tunneling of electrons between unfilled localized electronic states. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 7, 483–488 (10 October 1996)     

不同微槽结构绝缘子真空沿面闪络特性

针对单极性脉冲电压下不同微槽结构绝缘子真空沿面闪络特性开展实验研究。根据二次电子运动特性,设计了多种微槽宽度,对比了微槽结构和平面结构的绝缘子耐压特性差异。槽宽为1mm的微槽样品耐压水平与平面结构样品耐压水平相当,槽宽小于1mm的样品组耐压水平均高于平面结构样品,最高电压提高倍数约为1.4,说明一定尺寸范围内的微槽设计将提高绝缘子真空耐压水平。通过电场强度计算分析微槽结构对二次电子运动的影响过程可知,较大的微槽宽度可使电子限制在槽内运动,较小的微槽宽度将抑制初始电子的发展,最终二者都能达到抑制闪络的目的。通过显微镜观测各组样品表面特征,材料表面微观缺陷将可能降低材料耐压水平。     

Formation of spatial shell structure in the superfluid to Mott insulator transition

We report on the direct observation of the transition from a compressible superfluid to an incompressible Mott insulator by recording the in-trap density distribution of a Bosonic quantum gas in an optical lattice. Using spatially selective microwave transitions and spin-changing collisions, we are able to locally modify the spin state of the trapped quantum gas and record the spatial distribution of lattice sites with different filling factors. As the system evolves from a superfluid to a Mott insulator, we observe the formation of a distinct shell structure, in good agreement with theory.     

The energy distribution of an ion in a radiofrequency trap interacting with a nonuniform neutral buffer gas

An ion in a radiofrequency (rf) trap sympathetically cooled by a simultaneously trapped neutral buffer gas exhibits deviations from thermal statistics caused by collision-induced coupling of the rf field to the ion motion. For a uniform density distribution of the buffer gas, the energy distribution of the ion can be described by Tsallis statistics. Moreover, runaway heating of the ion occurs if the buffer gas particles are sufficiently heavy relative to the ion. In typical experiments, however, ultracold buffer gases are confined in traps resulting in localised, non-uniform density distributions. Using a superstatistical approach, we develop an analytical model for an ion interacting with a localised buffer gas. We demonstrate theoretically that limiting collisions to the centre of the ion trap enables cooling at far greater mass ratios than achievable using a uniform buffer gas, but that an upper limit to the usable mass ratio exists even in this case. Furthermore, we analytically derive the functional form of the energy distribution for an ion interacting with a buffer gas held in a harmonic potential. The analytical distribution obtained is found to be in excellent agreement with the results of numerical simulations.     

三维光晶格中玻色凝聚气体基态波函数及干涉演化

基于Gross-Pitaevskii方程，运用有效化学势概念，研究了囚禁在组合势(由磁阱和三维光 晶格组成)中玻色凝聚气体在三维光晶格中的分布规律，并由此得到玻色凝聚气体的归 一化基态波函数.在取消组合势和仅取消光晶格而保留磁阱的两种情况下，运用传播子方 法求解出玻色凝聚气体密度分布的解析表达式.取消组合势后，理论计算所得到的玻色凝聚 气体聚随时间的演化规律与Greiner等的实验结果相一致.仅取消光晶格而保留磁阱时，研 究表明玻色凝聚气体的干涉模式呈现周期性的振荡行为.此外，在磁阱为各向异性的情况下 ， 关键词： 玻色凝聚气体 磁阱 光晶格 干涉模式     

Atomic density of a harmonically trapped ideal gas near Bose-Einstein transition temperature

We have studied the atomic density of a cloud confined in an isotropic harmonic trap at the vicinity of the Bose-Einstein transition temperature. We show that, for a non-interacting gas and near this temperature, the ground-state density has the same order of magnitude as the excited states density at the centre of the trap. This holds in a range of temperatures where the ground-state population is negligible compared to the total atom number. We compare the exact calculations, available in a harmonic trap, to semi-classical approximations. We show that these latter should include the ground-state contribution to be accurate.     

Trapped Fermi gases in rotating optical lattices: realization and detection of the topological hofstadter insulator

We consider a gas of noninteracting spinless fermions in a rotating optical lattice and calculate the density profile of the gas in an external confinement potential. The density profile exhibits distinct plateaus, which correspond to gaps in the single particle spectrum known as the Hofstadter butterfly. The plateaus result from insulating behavior whenever the Fermi energy lies within a gap. We discuss the necessary conditions to realize the Hofstadter insulator in a cold atom setup and show how the quantized Hall conductance can be measured from density profiles using the Streda formula.     

Blumlein主放电开关中绝缘结构对沿面闪络电压的影响北大核心CSCD

Blumlein主放电开关作为关键部件被大量地应用于强流电子直线感应加速器等大型脉冲功率装置中,其中绝缘子在主开关中起隔离水或油与气体的作用。设备在高电压脉冲下长时间或高频次作用时,绝缘子气体侧会出现沿面闪络现象,严重影响直线感应加速器的可靠运行。对Blumlein主放电开关中的绝缘结构进行了电场仿真计算,通过对绝缘子的几何结构和电极形状的优化设计,有效调控了绝缘子表面和电极表面的电场分布,试制了不同构型的绝缘子,开展了在标准雷电波脉冲条件下的沿面闪络研究。研究结果表明,优化后的绝缘子的最低和最高沿面闪络电压相比原始结构分别提升了约35.9%和37.2%。     

Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator

In this paper, top-gate thin-film transistors (TFTs) using amorphous In-Ga-Zn-O as the n-channel active layer and SiO₂ as gate insulator were fabricated by radio frequency magnetron sputtering at room temperature. In this device, a SiO layer was used to be a buffer layer between active layer and gate insulator for preventing the damage of the InGaZnO surface by the process of sputtering SiO₂ with relatively high sputtering power. The thickness of buffer layers was studied and optimized for enhancing the TFTs performances. Contrasting to the TFTs without buffer layer, the optimized thickness of 10 nm SiO buffer layer improved the top-gate TFTs performances greatly: mobility increases 30%, reached 1.29 cm²/V s, the I_on/I_off ratio increases 3 orders, and the trap density at the interface of channel/insulator decreases about 1 order, indicated that the improvement of semiconductor/dielectric interface by buffering the sputtering power.     

Compact magneto-optical trap for rubidium atoms

The characteristics of a magneto-optical trap (MOT) using small-diameter cooling laser beams are considered. Trapping and cooling of Rb atoms from the surrounding gas of warm atoms takes place in the trap. A compact (140 μm) and stable atomic cloud is obtained with a density of 7 × 10¹⁰ cm^?3, which is three orders of magnitude higher than the density of the surrounding gas.     

Electrical transport in superlattices containing InAs quantum dots in GaAs and InP

Selectively-doped heterostructures based on both GaAs and InP containing several atomic layers coverage of InAs as both strained 2D and partially relaxed 3D (quantum dot) have been grown by gas source molecular beam epitaxy and the transport properties have been investigated. We show that while coherently strained InAs in 2D layers results in increased electron mobilities, the formation of 3D quantum dots appear to trap electrons and decrease significantly the mobility of those remaining. The degree of trapping is dependent on the size and density of the dots.     

Resonator-enhanced optical dipole trap for fermionic lithium atoms

We demonstrate a novel optical dipole trap that is based on enhancement of the optical power density of a Nd:YAG laser beam in a resonator. The trap is particularly suited for experiments with ultracold gases, as it combines a potential depth of the order of 1 mK with storage times of several tens of seconds. We study the interactions in a gas of fermionic lithium atoms in our trap and observe the influence of spin-changing collisions and off-resonant photon scattering. A key element in reaching long storage times is the use of an ultralow-noise laser. The dependence of storage time on laser noise is investigated.     

Observations of density fluctuations in an elongated Bose gas: ideal gas and quasicondensate regimes

We report in situ measurements of density fluctuations in a quasi-one-dimensional 87Rb Bose gas at thermal equilibrium in an elongated harmonic trap. We observe an excess of fluctuations compared to the shot-noise level expected for uncorrelated atoms. At low atomic density, the measured excess is in good agreement with the expected "bunching" for an ideal Bose gas. At high density, the measured fluctuations are strongly reduced compared to the ideal gas case. We attribute this reduction to repulsive interatomic interactions. The data are compared with a calculation for an interacting Bose gas in the quasicondensate regime.     

绝缘环打火研究

绝缘问题是高电压、高场强器件和设备中不可回避的问题,是决定器件、设备运行参数和稳定性的重要因素。针对一台直线感应加速器调试中出现的加速腔绝缘环在带束负载情况下的真空沿面闪络现象,进行了分析和研究。分析表明,在排除设计、材料、加工、洁净和真空度等常规异常因素后,导致绝缘环真空沿面闪络的可能因素是电子在绝缘环表面的吸附和累积,绝缘环上累积的电子来源和加速器中加速、传输的电子束的丢失有关。从加速腔工作状态出发,分析绝缘环表面积累电荷和丢失电子束的相关途径,进而提出相应的技术措施,以提高加速腔运行稳定性。     

Efficiency of electrical manipulation in two-dimensional topological insulators

We investigate the efficiency of electrical manipulation in a two-dimensional topological insulator by inspecting the electronic states of a lateral electrical potential superlattice in the system. The spatial distribution of the electron density in the system can be tuned by changing the strength of the externally applied lateral electrical superlattice potential. This provides us the information about how efficiently one can manipulate the electron motion inside a two-dimensional topo- logical insulator. Such information is important in designing electronic devices, e.g., an electric field effect transistor made of the topological insulator. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region both display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. These features can be attributed to the coupled multiple-band nature of the topological insulator. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model. Our study suggests that the electron density manipulation via electrical gating in a two-dimensional topological insulator is less effective and more delicate than that in a traditional single-band semiconductor.     

Exact solution for a trapped Fermi gas with population imbalance and BCS pairing

The problem of a two-component Fermi gas in a harmonic trap, with an imbalanced population and a pairing interaction of zero total momentum, is mapped onto the exactly solvable reduced BCS model. For a one-dimensional trap, the complete ground state diagram is determined with various topological features in ground state energy spectra. In addition to the conventional two-shell density profile of a paired core and polarized outer wings, a three-shell structure as well as a double-peak superfluid distribution are unveiled.     

Atomic and Electronic Structures of Intrinsic Defects in Ta<Subscript>2</Subscript>O<Subscript>5</Subscript>: Ab Initio Simulation

The atomic and electronic structure of intrinsic point defects in orthorhombic tantalum oxide has been studied by numerical simulation within the density functional theory. It has been shown that all defects responsible for metal enrichment of Ta₂O₅ serve as electron and hole traps. Under conditions of strong oxygen depletion and at a metal–insulator interface, which are characteristic of resistive memory elements, interstitial tantalum atoms compete with an oxygen vacancy in the formation of a conducting filament. Interstitial oxygen atoms are not involved in charge transport. Tantalum substituting oxygen can be considered as a combination of the oxygen vacancy and interstitial tantalum. The analysis of the calculated thermal and optical energies of trap ionization shows that the oxygen vacancy is a key defect for charge transport in Ta₂O₅.     

Collective oscillations of strongly correlated one-dimensional bosons on a lattice

We study the dipole oscillations of strongly correlated 1D bosons, in the hard-core limit, on a lattice, by an exact numerical approach. We show that far from the regime where a Mott insulator appears in the system, damping is always present and increases for larger initial displacements of the trap, causing dramatic changes in the momentum distribution, n(k). When a Mott insulator sets in the middle of the trap, the center of mass barely moves after an initial displacement, and n(k) remains very similar to the one in the ground state. We also study changes introduced by the damping in the natural orbital occupations, and the revival of the center-of-mass oscillations after long times.     

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly.