Controlled domain wall motion by current into patterned-U Ni80Fe20 wires

The current-induced domain wall motion was observed experimentally in the case of the domain wall trapped at the semicircular arc within the U shape Ni₈₀Fe₂₀ wire. The measurement of the current-induced domain wall motion was achieved by adding a biased field before switching field and a critical current density was measured. We found two magnetic domain structures in the U pattern. At zero fields, the vortex domain wall nucleated at the semicircular arc of the U pattern. Continuous magnetic state without wall was investigated in near-switching field.     

Current-induced domain wall motion in magnetic nanowires with spatial variation

We model current-induced domain wall motion in magnetic nanowires with the variable width. Employing the collective coordinate method we trace the wall dynamics. The effect of the width modulation is implemented by spatial dependence of an effective magnetic field. The wall destination in the potential energy landscape due to the magnetic anisotropy and the spatial nonuniformity is obtained as a function of the current density. For a nanowire of a periodically modulated width, we identify three (pinned, nonlinear, and linear) current density regimes for current-induced wall motion. The threshold current densities depend on the pulse duration as well as the magnitude of wire modulation. In the nonlinear regime, application of ns order current pulses results in wall displacement which opposes or exceeds the prediction of the spin transfer mechanism. The finding explains stochastic nature of the domain wall displacement observed in recent experiments.     

Nanometer scale observation of high efficiency thermally assisted current-driven domain wall depinning

Nanometer scale observation of the depinning of a narrow domain wall (DW) under a spin current is reported. We studied approximately 12 nm wide 1D Bloch DWs created in thin films exhibiting perpendicular magnetic anisotropy. Magnetotransport measurements reveal thermally assisted current-driven DW motion between pinning sites separated by as little as 20 nm. The efficiency of current-driven DW motion assisted by thermal fluctuations is measured to be orders of magnitude higher than has been found for in-plane magnetized films, allowing us to control DW motion on a nanometer scale at low current densities.     

Domain wall dynamics driven by spin transfer torque and the spin-orbit field

We have studied current-driven dynamics of domain walls when an in-plane magnetic field is present in perpendicularly magnetized nanowires using an analytical model and micromagnetic simulations. We model an experimentally studied system, ultrathin magnetic nanowires with perpendicular anisotropy, where an effective in-plane magnetic field is developed when current is passed along the nanowire due to the Rashba-like spin-orbit coupling. Using a one-dimensional model of a domain wall together with micromagnetic simulations, we show that the existence of such in-plane magnetic fields can either lower or raise the threshold current needed to cause domain wall motion. In the presence of the in-plane field, the threshold current differs for positive and negative currents for a given wall chirality, and the wall motion becomes sensitive to out-of-plane magnetic fields. We show that large non-adiabatic spin torque can counteract the effect of the in-plane field.     

Minimization of Ohmic losses for domain wall motion in a ferromagnetic nanowire

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.     

Domain wall motion in perpendicular anisotropy nanowires with edge roughness

We study field-driven domain wall (DW) motion in nanowires with perpendicular magnetic anisotropy using finite element micromagnetic simulations. Edge roughness is introduced by deforming the finite element mesh, and we vary the correlation length and magnitude of the roughness deformation separately. We observe the Walker breakdown both with and without roughness, with steady DW motion for applied fields below the critical Walker field H(c), and oscillatory motion for larger fields. The value of H(c) is not altered in the presence of roughness. The edge roughness introduces a depinning field. During the transient process of depinning, from the initial configuration to steady DW motion, the DW velocity is significantly reduced in comparison to that for a wire without roughness. The asymptotic DW velocity, on the other hand, is virtually unaffected by the roughness, even though the magnetization reacts to the edge distortions during the entire course of motion, both above and below the Walker breakdown. A moving DW can become pinned again at some later point ('dynamic pinning'). Dynamic pinning is a stochastic process and is observed both for small fields below H(c) and for fields of any strength above H(c). In the latter case, where the DW shows oscillatory motion and the magnetization in the DW rotates in the film plane, pinning can only occur at positions where the DW reverses direction and the instantaneous velocity is zero, i.e., at the beginning or in the middle of a positional oscillation cycle. In our simulations pinning was only observed at the beginnings of cycles, where the magnetization is pointing along the wire. The depinning field depends linearly on the magnitude of the edge roughness. The strongest pinning fields are observed for roughness correlation lengths that match the domain wall width.     

Dependence of current and field driven depinning of domain walls on their structure and chirality in permalloy nanowires

A magnetic domain wall (DW) injected and pinned at a notch in a permalloy nanowire is shown to exhibit four well-defined magnetic states, vortex and transverse, each with two chiralities. These states, imaged using magnetic force microscopy, are readily detected from their different resistance values arising from the anisotropic magnetoresistance effect. Whereas distinct depinning fields and critical depinning currents in the presence of magnetic fields are found, the critical depinning currents are surprisingly similar for all four DW states in low magnetic fields. We observe current-induced transformations between these DW states below the critical depinning current which may account for the similar depinning currents.     

Barkhausen jumps in the motion of a single ferroelectric domain wall

It is shown that the motion of a domain wall in the improper ferroelectric-ferroelastic gadolinium molybdate Gd₂(MoO₄)₃ demonstrates a self-organized critical behavior under polarization reversal. Barkhausen pulses are measured experimentally during the jumpwise motion of a single plane domain wall in monocrystalline plates with artificial pinning centers of the “field inhomogeneity” type.     

Negative and positive magnetoresistance manipulation in an electrodeposited nanometer Ni contact

We show that, in a nanometric size stable electrodeposited Ni contact, it is possible to modify the magnetoresistance by applying current pulses and external magnetic fields whereby the same current path is used for detection and modification. We can pass from positive to negative magnetoresistance with values as large as 25% at room temperature, all in the same contact. We propose that the effect may be due to switching and moving domain walls in the contact region under the combination of current effects and external fields.     

Fast domain wall dynamics in amorphous glass-coated microwires

Here we report on the domain wall dynamics in amorphous glass-coated FeCuNbSiB microwires measured in the temperature range from 77 up to 400 K. At low temperatures below 200 K, the domain wall velocity is proportional to the applied magnetic field. At temperatures above 200 K, two regions have been found: one with low domain wall mobility at low fields and another one with high domain wall mobility at high fields. The different regions of the domain wall dynamics are treated in terms of the change of the domain wall configuration from transversal to vortex one. Moreover, non-linear regime is shown at low fields at the temperature 373 K as a result of the domain wall interaction with the local defects.     

Magneto-optical and micromagnetic simulation study of the current-driven domain wall motion in ferromagnetic (Ga,Mn)As

We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved polar magneto-optical Kerr effect microscopy and micromagnetic simulation. Regardless of the initial magnetic configuration, the domain wall propagates in the opposite direction to the current with critical current of 1-2×10⁵ A/cm². Considering the spin-transfer torque term as well as various effective magnetic field terms, the micromagnetic simulation results are consistent with the experimental results. Our simulated and experimental results suggest that the spin-torque rather than Oersted field is the reason for current-driven domain wall motion in this material.     

Influence of exchange coupling on current-driven domain wall motion in a nanowire

In this study, the effect of exchange stiffness constant on current-driven domain wall motion in nanowires with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) has been investigated using micromagnetic simulation. The critical current density in a nanowire with IMA decreases as the exchange stiffness constant decreases because the domain wall width at the upper edge of the nanowire narrows according to the decrease of the exchange stiffness constant. On the other hand, the critical current density in a nanowire with PMA slightly decreases contrary to that of IMA although the domain wall width reasonably decreases as the exchange stiffness constant decreases. The slight reduction rate of the critical current density is due to the increase of the effective hard-axis anisotropy of PMA nanowire.     

Magnetic soft x-ray microscopy of the domain wall depinning process in permalloy magnetic nanowires

Full-field magnetic transmission x-ray microscopy at high spatial resolution down to 20 nm is used to directly observe field-driven domain wall motion in notch-patterned permalloy nanowires. The depinning process of a domain wall around a notch exhibits a stochastic nature in most nanowires. The stochasticity of the domain wall depinning sensitively depends on the geometry of the nanowire such as the wire thickness, the wire width, and the notch depth. We propose an optimized design of the nanowire for deterministic domain wall depinning field at a notch.     

Influence of a transport current on a domain wall in an antiferromagnetic metal

We consider the influence of an electric current on the position of a domain wall in an antiferromagnetic metal. We first microscopically derive an equation of motion for the Néel vector in the presence of current by performing, in the transport steady state, a linear-response calculation in the deviation from collinearity of the antiferromagnet. This equation of motion is then solved variationally for an antiferromagnetic domain wall. We find that, in the absence of dissipative or non-adiabatic coupling between magnetization and current, the current displaces the domain wall by a finite amount and that the domain wall is then intrinsically pinned by the exchange interactions. In the presence of dissipative or non-adiabatic current-to-domain-wall coupling, the domain wall velocity is proportional to the current and is no longer pinned.     

Dynamics of magnetic domain wall motion after nucleation: dependence on the wall energy

The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small.     

Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale

Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited by response time. In this Letter, we report the first direct studies of ferroelectric capacitor switching on a submicrosecond time scale. Simultaneous domain imaging and sub-mus transient current measurements establish a direct relationship between polarization P(t) and domain kinetics. Switching times scale with capacitor size over an order of magnitude. Small capacitors, where polarization reversal is dominated by domain wall motion, switch faster at high fields but more slowly at low fields while larger capacitors do the reverse.     

Influence of current on field-driven domain wall motion in permalloy nanowires from time resolved measurements of anisotropic magnetoresistance

The motion of magnetic domain walls in permalloy nanowires is investigated by real-time resistance measurements. The domain wall velocity is measured as a function of the magnetic field in the presence of a current flowing through the nanowire. We show that the current can significantly increase or decrease the domain wall velocity, depending on its direction. These results are understood within a one-dimensional model of the domain wall dynamics which includes the spin transfer torque.     

Universality classes of magnetic domain wall motion

We examine magnetic domain wall motion in metallic nanowires Pt-Co-Pt. Regardless of whether the motion is driven by either magnetic fields or current, all experimental data fall onto a single universal curve in the creep regime, implying that both the motions belong to the same universality class. This result is in contrast to the report on magnetic semiconductor (Ga,Mn)As exhibiting two different universality classes. Our finding signals the possible existence of yet other universality classes which go beyond the present understanding of the statistical mechanics of driven interfaces.     

The increase of the spin-transfer torque threshold current density in coupled vortex domain walls

We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.     

Stochastic heating and acceleration of electrons in colliding laser fields in plasma

We propose a mechanism that leads to efficient acceleration of electrons in plasma by two counterpropagating laser pulses. It is triggered by stochastic motion of electrons when the laser fields exceed some threshold amplitudes, as found in single-electron dynamics. It is further confirmed in particle-in-cell simulations. In vacuum or tenuous plasma, electron acceleration in the case with two colliding laser pulses can be much more efficient than with one laser pulse only. In plasma at moderate densities, such as a few percent of the critical density, the amplitude of the Raman-backscattered wave is high enough to serve as the second counterpropagating pulse to trigger the electron stochastic motion. As a result, even with one intense laser pulse only, electrons can be heated up to a temperature much higher than the corresponding laser ponderomotive potential.