双波长外腔半导体激光器的研究

提出了电流调制型的双波长外腔半导体激光器方案。外腔半导体激光器具有窄线宽输出以及独特的阶越型电流调制特性,采用正弦调制的方式,以延时光纤作为辅助结构,得到了具有良好相干特性和稳定波长间隔的双波长激光输出。与多种已有的双波长激光器设计方案相比,这种多波长工作方式结构简单,调谐范围宽,在波分复用光通信系统、高精度光纤传感测量以及外差、双(多)波长合成波长干涉测量等技术中具有很好的应用前景。     

闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究

在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。     

Self modulation phenomena in an external-cavity semiconductor laser

We report the observed self-modulation phenomena in an external-cavity semiconductor laser, in which a slant ridge-loading waveguide was formed for the gain medium. A region beside the ridge at a cleaved end of the waveguide served as a saturable absorber for self-modulation. Under different conditions of injection current and cavity alignment, we observed three laser operation regimes, including pure cw oscillation, constant-amplitude pulse-like signal on the top of a cw component, and amplitude-modulated pulse-like signal coexistent with a cw component. The amplitude modulation phenomenon is different from the previously reported concurrence of mode-locking and self-pulsation. A model was proposed to explain the observed results.     

2.1-W picosecond passively mode-locked external-cavity semiconductor laser

We demonstrate an optically pumped passively mode-locked external-cavity semiconductor laser generating 4.7-ps pulses at 957 nm with as much as 2.1 W of average output power and a 4-GHz repetition rate. Compared with earlier results, the chirp of the pulses has been greatly reduced by use of an intracavity etalon. Apart from restricting the bandwidth, the etalon also helps optimize wavelength-dependent gain parameters and dispersion.     

Continuous tuning of an electrically tunable external-cavity semiconductor laser

We propose and demonstrate a novel approach to achieving rapid and phase-coherent continuous broadband tuning of a single-mode external-cavity semiconductor laser. Two internal acousto-optic devices control the angle of incident light on a diffraction grating and the effective round-trip phase electronically. Although the present implementation derives the phase from a long delay line and is not yet mode-hop free, the new approach lends itself to fully electronic control.     

Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser

We present a compact, robust, solid-state blue-light (490-nm) source capable of greater than 5 mW of output in a TEM(00) mode. This device is an optically pumped, vertical external-cavity surface-emitting laser with an intracavity frequency-doubling crystal.     

Mid-infrared external-cavity quantum-cascade laser

Single-frequency operation of a 10.4-mum room-temperature multimode quantum-cascade laser was achieved by use of a 17-mm short Littrow-type external-cavity configuration. The spectral intensity of the external-cavity laser was increased as much as 20-fold compared with that of a multimode quantum-cascade laser without an external cavity. A single-frequency tuning range of 76 nm (7 cm(-1)) was achieved. The results were obtained without antireflection coating of the laser output facet.     

高斯切趾型光纤布拉格光栅外腔半导体激光器的混沌输出特性

基于光反馈半导体激光器(SL)速率方程模型,理论仿真研究了高斯切趾型光纤布拉格光栅(GAFBG)反馈SL(GAFBGF-SL)混沌输出的延时特征(TDS)以及混沌带宽特性.结果表明:随着反馈强度的增加,GAFBGF-SL表现出由准周期进入混沌的动力学演化路径;通过合理选择GAFBG布拉格频率与SL中心频率之间的频率失谐及反馈强度,GAFBGF-SL混沌输出的TDS能得到有效抑制(低于0.02);通过进一步绘制混沌信号TDS及带宽在GAFBG布拉格频率与SL中心频率之间的频率失谐和反馈强度构成的参量空间中的分布图,确定了获取弱TDS、宽带宽光混沌信号的参数范围.     

Ultralow noise and supermode suppression in an actively mode-locked external-cavity semiconductor diode ring laser

We report what is to our knowledge the lowest phase and amplitude noise characteristics achieved to date in a 10-GHz pulse train produced by the active harmonic mode locking of an external-cavity semiconductor diode laser. Supermode noise has also been suppressed below -140 dBc/Hz by use of a high-finesse fiber Fabry-Perot etalon as an intracavity filter. Novel noise sideband measurements that extend to the Nyquist offset frequency suggest a significant advantage in using harmonic (rather than fundamental) mode locking to produce ultralow-noise pulse trains, owing to the relationship between the noise roll-off frequency and the fundamental cavity frequency.     

Electronically tunable external-cavity laser diode

We present a new concept for an electronically tunable diode laser. It is based on an external-cavity configuration with simultaneous feedback and intracavity spatial separation of the laser's spectral components. The electronical tunability is achieved by insertion of a liquid-crystal array as an electronically controlled aperture into the region of spatial separation of the spectral components. Wavelength tunability without mechanical movement over a range of 10 nm and two-color operation are demonstrated with a 670-nm laser diode.     

激光测距用半导体脉冲激光测头的研究

研究了激光测距用半导体脉冲激光测头。通过对基于脉冲激光测距原理的半导体脉冲激光器的参数测量分析,研究了半导体脉冲激光的发射和接收。通过优化光学镜头组合,对半导体激光分散光束进行了平行准直。通过开发脉冲激光驱动电路、光电探测接收放大电路和半导体脉冲激光测距实验装置,研制了满足中距离激光测距要求的半导体脉冲激光测头。     

外腔半导体激光器中激光二极管端面反射率的谱特性分析

考虑到端面反射率与波长有关 ,且带宽有限的实验事实 ,以及增益谱随载流子密度变化的因素 ,着重分析了激光二极管 (L D)镀膜端面反射率带宽、极小波长位置参量对光栅外腔激光器 (ECL D)调谐范围的影响。分析表明 ,除了 L D镀膜端面剩余反射率值、外腔反馈效率等因素之外 ,增大反射率带宽、精确控制极小波长位置是进一步挖掘 ECL D调谐范围的有效措施。增大反射率带宽 ,可更有效地提高参考载流子密度 ,延伸长波长端调谐区域 ,抑制 F- P腔影响。在确定的条件下 ,优化后的极小波长位置对应于调谐范围的极大值。理论分析结果较好地解释了实验现象     

利用频谱仪提取双反馈混沌半导体激光器的外腔长度密钥

光反馈半导体激光器产生的高维宽带混沌载波,应用于光混沌通信系统中.主器的外腔长度用作混沌保密通信的附加密钥.本文实验研究了光反馈混沌半导体激光器外腔长度密钥的识别.通过对长腔光反馈产生的混沌频谱进行局部放大,分析其精细结构,结果表明:无论是单反馈半导体激光器还是有不同外腔长度比的双反馈半导体激光器,都可以利用频谱仪直接提取出激光器的外腔长度信息.     

Cascaded synchronization of external-cavity laser diodes

An experimental demonstration of optical synchronization of a chain of chaotic external-cavity laser diodes is reported for what is believed to be the first time. The experiment is performed in the low-frequency-fluctuation regime.     

反馈强度对外腔反馈半导体激光器混沌熵源生成的随机数序列性能的影响

外腔反馈半导体激光器在合适的反馈强度下将呈现混沌态, 其输出的激光混沌信号可作为物理熵源获取物理随机数序列. 着重研究了外腔反馈强度对最后获取的二元码序列的随机性的影响. 数值仿真结果表明, 随着反馈强度的增加, 外腔反馈半导体激光器输出的混沌信号的延时时间特征峰值呈现先逐渐减小再逐渐增大的过程, 而对应的排列熵特征值呈现先增大、后缓慢降低的过程, 即存在一个优化的反馈强度可使输出的混沌信号的延时特征得到有效抑制且复杂度高. 利用NIST Special Publication 800-22软件对基于不同反馈强度下外腔半导体激光器输出的混沌信号所产生的二元码序列的随机性进行了相关测试, 并讨论了反馈强度的大小对测试结果的影响.     

Experimental synchronization of chaotic oscillations in external-cavity semiconductor lasers

Synchronization of fast chaotic oscillations of the order of gigahertz is experimentally observed in two external-cavity semiconductor lasers.     

半导体激光器拍摄全息图的研究

半导体激光器输出的光束为椭圆高斯光束,若直接用于全息照相非常不利.采用梯形棱镜对将半导体激光器输出光束进行整形,并且在输出光束束腰位置进行全息照相,拍摄的全息图效果非常逼真.     

Dynamic characteristics in an external-cavity multi-quantum-well laser

This paper outlines our studies of bifurcation, quasi-periodic road to chaos and other dynamic characteristics in an external-cavity multi-quantum-well laser with delay optical feedback. The bistable state of the laser is predicted by finding theoretically that the gain shifts abruptly between two values due to the feedback. We make a linear stability analysis of the dynamic behavior of the laser. We predict the stability scenario by using the characteristic equation while we make an approximate analysis of the stability of the equilibrium point and discuss the quantitative criteria of bifurcation. We deduce a formula for the relaxation oscillation frequency and prove theoretically that this formula function relates to the loss of carriers transferring between well regime and barrier regime, the feedback level, the delayed time and the other intrinsic parameters. We demonstrate the dynamic distribution and double relaxation oscillation frequency abruptly changing in periodic states and find the multi-frequency characteristic in a chaotic state. We illustrate a road to chaos from a stable state to quasi-periodic states by increasing the feedback level. The effects of the transfers of carriers and the escaping of carriers on dynamic behavior are analyzed, showing that they are contrary to each other via the bifurcation diagram. Also,we show another road to chaos after bifurcation through changing the linewidth enhancement factor, the photon loss rate and the transfer rate of carriers.     

Simple high-coherence rapidly tunable external-cavity diode laser

We describe a simple electro-optically activated external-cavity diode laser designed to provide high-speed, high-coherence tuning over gigahertz frequency ranges. Tuning as fast as 23 GHz/ micros is demonstrated. Coherence measurements indicate transform-limited quiescent laser linewidth in observation windows as wide as ~100 micros and transform-limited chirps. A self-heterodyne, cross-correlation-based coherence diagnostic is developed for characterizing phase coherence during high-speed chirps.     

Frequency-narrowed external-cavity broad-area-diode for rubidium laser pumping

Using an external cavity with holographic grating, we demonstrate the spectral narrowing of a high power broad-area-diode with a single emitter. The spectral bandwidth of less than 15 GHz is obtained with output power exceeding 10 W and external cavity efficiency exceeding 60%. Absorption of 98% of the laser radiation by a 25-mm rubidium vapor cell filled with 600-torr ethane at a temperature of 368 K is acquired, which demonstrates the availability of this pump source for efficient rubidium laser pumping.