样品温度对CF3+ 与Si表面相互作用影响的分子动力学模拟

利用分子动力学模拟方法研究了不同温度下CF_x层对CF⁺₃刻蚀Si表面过程的影响.由模拟数据可知,温度对C和F的沉积有显著的影响,通过提高样品的温度,物理刻蚀得到了加强,而化学刻蚀被减弱.同时,随着温度的升高,Si的刻蚀率相应增加.刻蚀产物中的SiF,SiF₂的量随温度的增加而增加,SiF₃的量与基体温度没有直接的关系.Si刻蚀率的增加主要是通过提高SiF,SiF_{2相似文献}   

CHF3双频电容耦合放电等离子体特性研究

研究了用于SiCOH 低介电常数薄膜刻蚀的CHF₃气体在1356 MHz/2 MHz,2712 MHz/2 MHz和60 MHz/2 MHz双频电容耦合放电时的等离子体性质.发现2 MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从1356,2712增大到60 MHz,导致CF₂基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF₂基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果.     

CF_4/Ar/O_2等离子体对熔石英元件的修饰工艺

采用感应耦合等离子体刻蚀技术,以CF4/Ar/O2为反应气体对熔石英元件表面进行修饰,研究并分析了CF4和Ar流量对刻蚀速率、熔石英表面粗糙度和微观形貌的影响。结果表明,CF4化学刻蚀与Ar的物理轰击对熔石英样品表面修饰效果存在一定竞争关系,当它们达到平衡时表面粗糙度最小。通过对不同流量气体刻蚀过后熔石英表面粗糙度和光学显微形貌分析获得了较为理想的气流量配比,该研究为反应等离子体修饰熔石英光学元件以获得较高光学性能提供工艺参考。     

电容器薄膜等离子体表面改性实验研究

 建立了一套辉光放电等离子体对电容器薄膜进行表面处理的装置。采用N₂，O₂及Ar三种气体对聚丙烯、聚酯和聚苯硫醚膜进行了表面处理。红外光谱分析表明:薄膜表面的生成物与薄膜种类、气体种类和处理强度密切相关。场扫描电镜显示了薄膜表面的刻蚀现象明显。处理过的薄膜，非晶相被去除，球晶暴露。能谱分析说明了薄膜中C元素下降，N，O元素增加，但总体改变量很小。处理前后薄膜的直流击穿电压没有明显改变，但刻蚀过程造成的薄膜表面粗化可帮助电容器的浸渍过程更充分，从而可提高电容器的使用场强与储能密度。     

大气压等离子体辅助多晶硅薄膜化学气相沉积参数诊断

本文采用发射光谱法诊断了大气压下Ar气、SiCl₄及H₂气混合气体（Ar/SiCl₄/H₂）射频放电等离子体射流特性.利用Si原子谱线强度计算了电子激发温度并以此估算了Si原子数密度,研究了射频功率及气体流量对电子激发温度和Si原子数密度以及SiCl₄解离率的作用.     

离子辐照对单晶Si中预注入B原子扩散的影响

室温下使用MeV能量级Si,F和O离子对5keV B离子预注入后的n-型单晶Si(100)进行了辐照,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化.结果表明,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散.在相同的辐照条件下,Si近表面区域中SiO₂层的存在更有助于限制B原子的瞬间增强扩散.结合卢瑟福沟道背散射分析和DICADA程序计算对实验结果进行了讨论.     

密度泛函理论方法研究6H-SiC(0001)表面对氧分子和水分子的吸附

本文通过密度泛函方法计算6H-SiC(0001)表面对氧分子和水分子的吸附. 在6H-SiC(0001)表面上吸附的O₂分子自发地解离成O^*,并被吸收在C与Si原子之间的空位上. 吸附的H₂O自发地分解成OH^*和H^*,它们都被吸附在Si原子的顶部,OH^*进一步可逆地转化为O^*和H^*. H^*可以使Si悬键饱和并改变O^*的吸附类型,并进一步稳定6H-SiC(0001)表面并防止其转变为SiO₂.     

Zn在水锰矿和δ-MnO2表面吸附结构的EXAFS研究

用延展X射线吸收精细结构光谱(EXAFS)研究了重金属Zn(Ⅱ)在水锰矿(γ-MnOOH)和δ-MnO₂表面吸附产物的微观结构.结果表明,在0.1M NaNO₃介质中,pH7.5时Zn(Ⅱ)离子主要是通过共用水合Zn离子的氧原子及水锰矿表面上的氧原子结合到水锰矿固体表面上.第一配位层(Zn-O层)的Zn-O原子平均间距为2.00±0.01A,该键长是由于六配位的Zn(H₂O)₆²⁺及其四配位的水解产物Zn(OH)₂或Zn(OH)₄^2－以一定比例混合吸附于水锰矿表面面形成的.第二配位层(Zn-Mn层)存在两个Zn-Mn原子间距,即R₁=3.07±0.02A和R₂=3.54±0.02,分别对应水锰矿结构单元MnO₆八面体与Zn-O多面体两种结合方式:共用两个氧原子的边边结合和共用一个氧原子的角-角结合.pH5.50时,吸附在δ-MnO₂表面上Zn²⁺以六配位的八面体水合离子形式存在.水合锌离子八面体从δ-MnO₂层状结构的空位上下方,与δ-MnO₂的结构单元MnO₆八面体通过共用O原子给合,形成角-角结合的弱吸附.Zn-O原子平均间距为2.07±0.01A,Zn-Mn平均原子间距为3.53±0.01A.EXAFS分析表明,Zn在水锰矿表面吸附不可逆性较强,而在δ-MnO₂表面吸附很可逆,这与Zn和两种锰矿间的结合方式有关.     

a-Si∶O∶H薄膜微结构及其高温退火行为研究

以微区Raman散射、X射线光电子能谱和红外吸收对等离子体增强化学气相沉积(PECVD)法制备的氢化非晶硅氧(a-Si∶O∶H)薄膜微结构及其退火行为进行了细致研究.结果表明a-Si∶O∶H薄膜具有明显的相分离结构,富Si相镶嵌于富O相之中,其中富Si相为非氢化四面体结构形式的非晶硅(a-Si),富O相为Si,O,H三种原子随机键合形成的SiO_x∶H(x≈1.35).经1150℃高温退火,薄膜中的H全部释出;SiO_x∶H(x≈1.35)介质在析出部分Si原子的同     

H2Ge=Si:与甲醛生成含锗螺硅杂环化合物反应机理的从头算研究

用MP2/AUG-CC-PVDZ 方法研究了单重态H₂Ge=Si:与甲醛环加成反应的反应机理,该反应有一条主反应通道. 该反应所呈现的反应规律为：两反应物通过[2+2]环加成反应首先生成了一锗杂四元环硅烯,由于该锗杂四元环硅烯中Si:原子的3p空轨道与甲醛的π轨道形成了π→p授受键,使锗杂四元环硅进一步与甲醛结合生成了一中间体. 由于该中间体中的Si:原子在过渡态之后发生了sp³杂化,该中间体经过渡态异构化为含锗的螺硅杂环化合物. 该研究结果从理论上揭示了单重态H₂Ge=Si:及其衍生物(X₂Ge=Ge:, X=H, Me, F, Cl, Br, Ph, Ar, …)与非对称性π 键化合物环加成反应的反应机制.     

X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films

The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO₃ is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar⁺ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix.     

MoO_3/Si界面区钼掺杂非晶氧化硅层形成的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,通过模拟MoO_3/Si界面反应,研究了MoO_x薄膜沉积中原子、分子的吸附、扩散和成核过程,从原子尺度阐明了缓冲层钼掺杂非晶氧化硅(a-SiO_x(Mo))物质的形成和机理.结果表明,在1500 K温度下, MoO_3/Si界面区由Mo, O, Si三种原子混合,可形成新的稳定的物相.热蒸发沉积初始时, MoO_3中的两个O原子和Si成键更加稳定,同时伴随着电子从Si到O的转移,钝化了硅表面的悬挂键. MoO_3中氧空位的形成能小于SiO_2中氧空位的形成能,使得O原子容易从MoO_3中迁移至Si衬底一侧,从而形成氧化硅层;替位缺陷中, Si替位MoO_3中的Mo的形成能远远大于Mo替位SiO_2中的Si的形成能,使得Mo容易掺杂进入氧化硅中.因此,在晶硅(100)面上沉积MoO_3薄膜时, MoO_3中的O原子先与Si成键,形成氧化硅层,随后部分Mo原子替位氧化硅中的Si原子,最终形成含有钼掺杂的非晶氧化硅层.     

Fluorination of the silicon dioxide surface during reactive ion and plasma etching in halocarbon plasmas

Surface sensitive spectroscopies were employed to investigate the surface modifications which occur on SiO₂ during actual reactive ion and plasma etching in CF₄ and CF₄/O₂ plasmas. Photoemission and electron energy loss spectroscopies were used to characterize the composition and bonding in the modified layer. Core level photoemission measurements indicated a reaction layer 10–15 Å thick with a mean composition of SiOF₂. Photoemission and EELS studies of the valence bands identified several features due to Si---F bonding. Comparisons with the SiO₂ valence bands and implications for bonding are discussed. Electron energy loss spectra were also used to determine if ion induced “defect” species formed during reactive etching persist in the reaction layer. A comparison of reactive ion etching samples with those exposed to plasma etching conditions (negligible ion bombardment) indicated that the ion bombarded surfaces exhibit a reduced level of fluorination during steady state etching. Low energy ion scattering was used to determine the composition of the outermost atomic layer. These measurements indicated a fluorine terminated surface with virtually no remaining surface oxygen.     

Nanosized titania encapsulated silica particles using an aqueous TiCl4 solution

In this study, sub-micron sized silica particles were encapsulated with nanosized titania particles using an aqueous TiCl₄ solution. The particle size distribution of the synthesized titania particles in the coating layer was estimated to be 10 nm from X-ray powder diffraction and transmission electron microscopy. The thickness of the coating layer ranged from a few nm to about 30 nm from transmission electron microscopy analysis. Zeta potential analysis demonstrated the presence of a titania particle coating layer and the extent of its coverage on the surface of silica particles. X-ray photoelectron spectroscopy analysis also demonstrated that titania particles were successfully deposited on the surface of core silica particles from the chemical shift of binding energies of O 1s, Ti 2p and Si 2p.     

Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study

The interactions at the evolving RuO₂/titanium interface have been studied by LEED, AES and XPS. Titanium films of up to 5 monolayers were evaporated onto well ordered and ion sputtered ruthenium dioxide crystal surfaces of (110) and (100) orientation. Stabilization of the surface oxygen content under thermal treatment in UHV (up to 600°C) with increasing titanium coverage was established. After extended (up to 4 h) annealing in O₂ at 600°C an epitaxial ordering of TiO₂ on RuO₂(110) was observed. The (1 × 1) LEED patterns from the epitaxial layer exhibit a reduced background level when compared to the RuO₂ substrate itself. These findings are correlated with the XPS data and are interpreted in connection with the disappearance of the defect RuO₂ phase in the surface layer of the RuO₂. The appearance of the (1 × 2) surface reconstruction at the RuO₂(100)/Ti interface is discussed in the context of maximum cation coordination by oxygen atoms.     

Formation of luminescent (NH4)2SiF6 phase from vapour etching-based porous silicon

In this paper we describe the formation of a luminescent (NH₄)₂SiF₆ via porous silicon (PS) obtained from HNO₃/HF vapour etching (VE) silicon (Si) substrates. It was found that at specific conditions, PS transforms in a luminescent thick white powder (WP) layer. Scanning electron microscopy (SEM) revealed that the WP has a coral-like structure. It was also found that PS persists as an intermediate layer between the Si substrate and the WP, and seems to be the seed that transforms into the WP. SEM microanalysis show that the WP is essentially composed of silicon (Si), nitrogen (N) and fluorine (F). Fourier transform infrared (FTIR) spectroscopy investigations show that this WP contains SiF₆²⁻ and NH₄⁺ ions and N---H chemical bonds. X-ray diffraction (XRD) patterns of the WP confirm that a (NH₄)₂SiF₆ cubic phase is concerned. SEM microanalyses show an excess of Si in the WP matrix. FTIR spectroscopy and XRD analysis reveal the presence of crystalline Si particles and SiO_x, both originating from the excess of Si. The (NH₄)₂SiF₆ WP phase emits an intense photoluminescence (PL) band, shifted towards higher energies as compared to the starting PS layer. The possible origin and mechanism of the luminescence emission was discussed taking into account the ability of small SiO_x-surrounded Si particles to emit PL at rather high energy. The wide range variation of the thickness of the (NH₄)₂SiF₆ WP may be easily used for the grooving of Si wafers.     

The effect of nitrogen ion implantation on tungsten surfaces

X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to study the phase, composition and chemical states of elements at the tungsten surface. The measurement results indicate that nitrogen-containing phase of tungsten were formed by nitrogen ion implantation (energy 40 keV, implantation doses of 4×10¹⁷, 8×10¹⁷ and 1.6×10¹⁸ ions/cm²). The formation of the W_x(O,N) and WN in the surface layer occurred as a result of nitrogen ion irradiation. A decrease in concentration of W_x(O,N) is observed with increasing N⁺ while that WN increases. Due to residual oxygen in the chamber WO₃ still exists at the surface of the specimen.     

Oxygen atom-induced D2 and D2O desorption on D/Si(1 1 1) surfaces

We studied reaction of oxygen atoms with D-terminated Si(1 1 1) surfaces from a desorption point of view. As the D (1 ML)/Si(1 1 1) surface was exposed to O atoms D₂ and D₂O molecules were found to desorb from the surface. The desorption kinetics of D₂ and D₂O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D₂ desorption spectra as a function of T_s appeared to be very similar to the H-induced D₂ desorption spectrum from the D/Si(1 1 1) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed.     

Si 2p and O 1s photoemission from oxidized Si(0 0 1) surfaces depending on translational kinetic energy of incident O2 molecules

The influence of translational kinetic energy of incident O₂ molecules for the passive oxidation of the partially oxidized Si(0 0 1) surface has been studied by photoemission spectroscopy. The incident energy of O₂ molecules was controlled up to 3 eV by a supersonic molecular beam technique. Two incident energy thresholds (1.0 and 2.6 eV) were found out in accordance with the first-principle calculations. Si 2p and O 1s photoemission spectra measured at representative incident energies showed the incident energy induced oxidation at the backbonds of the dimer and the second layer (subsurface) Si atoms. Moreover, the difference of oxygen chemical bonds was found out to be as the low and the high binding energy components in the O 1s photoemission spectra. They were assigned to bridge sites oxygen and dangling bond sites oxygen, respectively.