Density, viscosity and ultrasonic velocity studies of aqueous solutions of sodium acetate at different temperatures

The densities and viscosities of aqueous solutions of sodium acetate have been measured at 298.15, 303.15, 308.15 and 313.15 K and at atmospheric pressure. The molality range has been studied between 6.09 × 10^− 2 to 7.314 × 10^− 1 mol kg^− 1. The experimental values of density have been used to calculate apparent molar volume, partial molar volume, solute–solute interaction parameter, and Hepler's constant. The viscosity data have been analyzed with Jone–Dole equation. Furthermore, ultrasonic velocity measurements of aqueous solutions of sodium acetate have been made at 298.15 and 308.15 K and at atmospheric pressure. From experimental values of ultrasonic velocity, apparent molar isentropic compressibility and limiting apparent molar isentropic compressibility have been calculated. All the parameters calculated from density, viscosity, and ultrasonic velocity indicate that the sodium acetate is water structure maker.     

Femtosecond laser micro-structuring of aluminium under helium

The interaction of 180 fs, 775 nm laser pulses with aluminium under a flowing stream of helium at ambient pressure have been used to study the material re-deposition, ablation rate and residual surface roughness. Threshold fluence F_th0.4 J cm⁻² and the volume ablation rate was measured to be 30<V<450 μm³ per pulse in the fluence range 1.4<F<21 J cm⁻². The presence of helium avoids gas breakdown above the substrate and leads to improved surface micro-structure by minimising surface oxidation and debris re-deposition. At 1 kHz rep. rate, with fluence F>7 J cm⁻² and >85 W cm⁻² average power density, residual thermal effects result in melt and debris formation producing poor surface micro-structure. On the contrary, surface micro-machining at low fluence F1.4 J cm⁻² with low power density, 3 W cm⁻² produces much superior surface micro-structuring with minimum melt and measured surface roughness R_a1.1±0.1 μm at a depth D50 μm. By varying the combination of fluence/scan speed during ultra-fast ablation of aluminium at 1 kHz rep. rate, results suggest that maintaining average scanned power density to <5 W cm⁻² combined with single pulse fluence <4 J cm⁻² produces near optimum micro-structuring. The debris under these conditions contains pure aluminium nanoparticles carried with the helium stream.     

Enhanced performances of ZnO-TFT by improving surface properties of channel layer

Top-contact thin film transistors with ZnO as the channel layer and thermally grown SiO₂ as the gate dielectric were fabricated by using rf sputtering. The performances of ZnO-TFTs with different thicknesses of the active layer were investigated and the optimized condition was obtained. With the active layer thickness from 25 to 70 nm, the leakage current of devices increased from 10⁻¹⁰ to 10⁻⁸ A, and the on/off ratio decreased from 1.2×10⁷ to 2×10⁴. Atomic force microscope research indicated that with the thickness increased, the surface morphology of the active layer improved noticeably at first and then deteriorated. The 25-nm-thick ZnO TFT had the best surface morphology, and showed the best performance with a field effect mobility of 5.1 cm²/V S, on/off ratio of 1.2×10⁷ and threshold voltage of 20 V. This indicates that the surface properties of the channel layer have crucial affects on the performances of ZnO-TFTs.     

Proton conductive amorphous thin films of tungsten oxide clusters with acidic ligands

Three kinds of peroxo-polytungstic acid (PPTA, C-PPTA and N-PPTA) were obtained by reacting hydrogen peroxide with metallic tungsten, tungsten carbide or tungsten nitride, respectively. Polytungstates, C-PPTA and N-PPTA, were found to contain oxalate and nitrate ligands. Their proton conductivities were compared using thin film specimens spin-coated from their water solution. Conductivity of each as-coated film was in the range from 10⁻³ to 10⁻⁴ S cm⁻¹ under the relative humidity of 40% (25 °C). A sharp decrease in conductivity (to less than 10⁻⁷ S cm⁻¹ at 25 °C) was observed for PPTA without acidic ligands after thermal treatment at 80 °C. However, the effect of thermal treatment on C-PPTA or N-PPTA was much milder. A 80 °C-treated C-PPTA film showed the conductivity of 1.0 × 10⁻⁵ S cm⁻¹ (25 °C) with a very weak dependency on ambient humidity.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

The IR spectra of Mg5C(CO) complexes on the (0 0 1) surfaces of polycrystalline and single crystal MgO

The FTIR spectroscopy of carbon monoxide adsorbed on polycrystalline MgO smoke has been investigated as a function of the CO equilibrium pressure at constant temperature (60 K) (optical isotherm) and of the temperature (in the 300–60 K range) at constant CO pressure (optical isobar). In both cases the spectra fully reproduce those of CO adsorbed on the (0 0 1) surface of UHV cleaved single crystals [Heidberg et al., Surf. Sci. 331–333 (1995) 1467]. This result, never attained in previous investigations on dispersed MgO, contribute to bridging the gap which is commonly supposed to exist between surface science and the study of “real” (defective) systems. Depending on the surface coverage θ the main spectral features due to the CO/MgO smoke interaction are a single band shifting from 2157.5 (at θ→0) to 2150.2 cm⁻¹ (at θ=1/4) or a triplet, at 2151.5, 2137.2 and 2132.4 cm⁻¹ (at θ>1/4). These manifestations are due to the ν(CO) modes of Mg_5C²⁺· · · CO adducts formed on the (0 0 1) terminations of the cubic MgO smoke microcrystals. The formation of the CO monolayer is occurring in two different phases: (i) a first phase with CO oscillators perpendicularly oriented to the surface (2157–2150 cm⁻¹) and (ii) a second phase constituted by an array of coexisting perpendicular and tilted species (triplet at 2151.5, 2137.2 and 2132.4 cm⁻¹). A much weaker feature at 2167.5–2164 cm⁻¹ is assigned to Mg_4C²⁺· · · CO adducts at the edges of the microcrystals. The heat of adsorption of the perpendicular Mg_5C²⁺· · · CO complex in the first phase has been estimated from the optical isobar and results to be 11 kJ mol⁻¹.     

Estimation of hydroxyl free radicals produced by ultrasound in Fricke solution used as a chemical dosimeter

Hydroxyl free radicals produced in Fricke solution exposed to 80 kV X-rays or 23 kHz ultrasound (intensity 3 W cm⁻²) or 20 kHz ultrasound (intensity 18.9 W cm⁻²) or 3.5 MHz clinical ultrasound (intensity 1.47 W cm⁻²), as estimated from the Fricke dosimetric data, exhibited a linear dose-response relationship. The dosimeter was found to be effective in the concentration range 1.0–8.0 mM of FeSO₄ solution. The hydroxyl radicals produced in Fricke solution were inhibited by the OH radical scavengers dimethyl sulfoxide (200 mM), -histidine (10 mM) and sodium benzoate (10 mM) in a manner proportional to the rate constants of their reaction with the OH radicals. The power threshold for OH radical formation, which is presumably the threshold for cavity formation, was estimated for 23 kHz ultrasound by this dosimeter as 1.28 W cm⁻² for a 4 cm³ sample volume.     

Dislocation-related luminescence in Er-implanted silicon

The behavior of luminescence spectra and structural defects in single crystal Czochralski silicon after erbium implantation at 1–1.8 MeV energies and 1×10¹³ cm⁻² dose with subsequent annealing at 1000–1200°C for 0.25–3 h in argon and a chlorine-containing ambience (CCA) was studied by photoluminescence (PL), transmission electron microscopy and chemical etching/Nomarski microscopy. We have found that annealing in CCA gives rise to dislocation loops and pure edge dislocations with dominant dislocation-related lines in the PL spectrum. Pure edge dislocations are responsible for the appearance of the lines.     

ATR–SEIR study of anions and water adsorbed on platinum electrode

Adsorbed species on bare Pt, and UPD-Pb or UPD-Cu/Pt electrodes were characterized in HClO₄ or H₂SO₄ solutions at various potentials using attenuated total reflection (ATR)–surface enhanced infrared absorption (SEIRA) spectroscopy. On the bare Pt electrode, anions were observed at 1120–1095 cm⁻¹ at +0.0 < E < +0.6 V, solvated by water molecules with OH stretching absorption at 3600 cm⁻¹ and HOH bending mode at 1610–1620 cm⁻¹. In addition to the S–OH totally symmetric mode at 950 cm⁻¹, adsorbed sulfate species gave two bands at 1230–1100 cm⁻¹ between 0.0 V < E < +0.8 V that are assigned to ν₃ (symmetric stretch of S–O in SO₃) of ions with different coordination based on the peak shift by isotope substitution. At more negative potential, solely water molecules adsorb on the bare Pt surfaces. In contrast, it was found that electrolyte anions such as bisulfate and with hydrating water molecules adsorb onto the UPD-Pb/Pt and UPD-Cu/Pt electrodes even at much negative potentials, e.g. −0.2 V for UPD-Pb.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

NIR-FT-SERS of 4″-trimethylsilylethylsulfanyl-4,4′-di(phenyleneethynylene)benzenethiol on Au nanospheres

Oligo(phenyleneethynylene) (OPE) compounds have been identified as promising molecular electronic bridges. Self-assembled monolayers of 4″-trimethylsilylethylsulfanyl-4,4′-phenyleneethynylenebenzene thiol (OPE′) on Au were characterized by surface-enhanced Raman scattering (SERS). The FT-Raman spectrum of OPE′ shows three C–S bands at 834, 1086, and 1131 cm⁻¹. From the FT-Raman to the SERS spectra, the 1086 cm⁻¹ band exhibits a 9 cm⁻¹ red shift. Chemisorption of OPE′ to the gold surface occurs via oxidative cleavage of the disulfide bond and the formation of the Au–S bond. The Au–S vibration is visible in the SERS spectra at 257 cm⁻¹. Peaks due to the S–S and S–H stretch are observed at 544 and 2519 cm⁻¹, respectively, in the FT spectrum, but are unobserved in the surface-enhanced spectra. The C–H stretching region (2700–3350 cm⁻¹) in the spectrum of neat OPE′ shows three distinct bands, whereas the SERS spectra show a single broad band. Assignments of vibrational bands were based on DFT calculations performed at the B3LYP level with good agreement between theoretical and experimental values. An average percent difference of 2.52 was obtained for the non-CH stretching frequencies.     

An infrared spectroscopic investigation of thin alumina films: measurement of acid sites and surface reactivity

The surface chemical activity of an alumina films grown on Mo(100) by oxidation of aluminum evaporated onto the surface and oxidized using water is examined using Auger, X-ray photoelectron and reflection/absorption infrared spectroscopies. The formation of alumina is confirmed using Auger and X-ray photoelectron spectroscopy from the positions and intensities of the aluminum features and using reflection-absorption infrared spectroscopy from the longitudinal optical modes of the Al–O bonds measured at 935 cm⁻¹. The presence of surface hydroxyls is monitored by forming films using D₂O which are evidenced by a feature at 2700 cm⁻¹. Ammonia adsorption on a dehydroxylated surface yields a single peak at 1260 cm⁻¹ due to ammonia adsorbed at a surface Lewis site where the principle symmetry axis of ammonia is oriented perpendicularly to the surface plane. Ammonia also appears to adsorb at Lewis sites on a hydroxylated surface with a slightly different adsorption geometry from that on a dehydroxylated surface. Finally, the chemistry of trimethyl aluminum adsorbed on the planar hydroxylated alumina surface is compared with that found on high-surface-area γ-alumina where the spectra and the chemistry found in both régimes is exactly identical except that the low-frequency methyl bending modes (at 769 and 718 cm⁻¹) are not obscured on the thin film by the intense substrate whereas they are on the high-surface-area support.     

Sr-doped LaInO3 and its possible application in a single layer SOFC

The effects of dopants on the electrical conductivity of the perovskite-type oxide LaInO₃ have been investigated. Replacement of La by Sr is the most effective way to enhance the conductivity of LaInO₃, whereas Ca substitution for In is rather difficult due to the large difference in the ion radii. The optimum composition is La_0.9Sr_0.1InO_3−δ whose maximum conductivity is 7.6×10⁻³ S cm⁻¹ at 900°C. The electrical conductivity of La_0.9Sr_0.1InO_3−δ has been measured over a wide range of oxygen partial pressure from pO₂=1 to 10⁻²⁵ atm. P-type and n-type behavior at high and low oxygen partial pressure have been observed, respectively, while at intermediate oxygen partial pressures, the electrical conductivity changes only slightly with the oxygen partial pressure. The concept of a single layer solid oxide fuel cell based on a La_0.9Sr_0.1InO_3−δ ceramic pellet has been tested. A maximum power density of 3 mW cm⁻² at 800°C was achieved when dilute H₂ and air were used as fuel and oxidizing agent, respectively.     

Far-infrared and millimeter wave spectroscopy of superionic copper conductors

Far-infrared and millimeter wave spectra of copper ion conducting crystal RbCu₄Cl_3+xI_2−x, which has the same structure as the room temperature silver ion conductor RbAg₄I₅, were investigated. Broad absorption peaks observed around 40, 80, and 110–200 cm⁻¹ at room temperature show doublet structures at low temperature; this may be attributed to the difference of local structure by chlorine and iodine ion. The 110–200 cm⁻¹ bands seem to be symmetric breathing modes of CuX₄ (X = Cl or I) tetrahedron and the frequency shift coincides with the square root of the mass ratio of conduction ions. The 80 cm⁻¹ band seems to be Rb-X vibration in RbX₆ octahedron. The 40 cm⁻¹ band seems to be the attempt mode which is an outward motion of the mobile ion in halogen cage. The increase of the absorption intensity at the low energy side with temperature corresponds to an increase of the DC conductivity. Plasmon fitting in energy loss function spectra was attempted.     

Properties of solvent-free perylene iodine

The perylene iodine system was prepared by a vapour-phase reaction without the use of solvents. Compositions between peryleneI₂ and peryleneI₆ were synthesized and studied by gravimetric analysis, infrared spectroscopy, X-ray diffraction and temperature-dependent resistivity measurements. Infrared spectra in the region 400–4000 cm⁻¹ taken after different amounts of iodine were removed from the sample are distinct from perylene with new absorption lines at 1551 and 1302 cm⁻¹ and shifts of some perylene frequencies. Powder X-ray diffraction measurements indicate that the lattice is monoclinic with parameters a=11.65 Å, b=10.85 Å, c=10.1 Å, β=100.5°. The (1 0 0) reflection, which is forbidden in the space group of perylene, is observed from the compound. The material is electrically conductive and obeys Ohm's law at high temperatures. At low temperatures and high currents, nonlinear effects are observed. The conductivity of the material increases to 1.0 (Ω cm)⁻¹ at room temperature as the iodine content increases to a composition of peryleneI₆. The resistivity obeys an exponential temperature dependence.     

Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers

Thermally grown SiO₂ layers on Si substrates implanted with Si⁺ ions with a dose of 6×10¹⁶ cm⁻² were studied by the techniques of photoluminescence, electron paramagnetic resonance (EPR), and low-frequency Raman scattering. Distinct oxygen-vacancy associated defects in SiO₂ and non-bridging oxygen hole centers were identified by EPR. The luminescence intensity in the 620 nm range was found to correlate with the number of these defects. The low-frequency Raman scattering technique was used to estimate the average size of the Si nanocrystallites formed after the implantation and thermal annealing at T>1100°C, which are responsible for the photoluminescence band with a maximum at 740 nm. The intensity of this band can be significantly enhanced by an additional treatment of the samples in a low-temperature RF plasma.     

HREELS of H/GaN(0001): evidence for Ga termination

Two issues relevant to the growth and processing of GaN are the termination of the GaN(0001) surface and its reaction with hydrogen. We have used high-resolution electron energy loss spectroscopy (HREELS), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES) to study the adsorption of hydrogen on MOCVD-grown GaN(0001). LEED of the sputtered and annealed surface shows evidence of facetting. No adsorbate vibrations are observed on the clean surface by HREELS, only Fuchs–Kliewer phonons at intervals of 700 cm⁻¹. Following exposure of the clean GaN surface to hydrogen atoms, HREEL spectra show adsorbate loss peaks at 2580, 3280, and 3980 cm⁻¹. The Ga–H stretching vibration at 1880 cm⁻¹ becomes evident when the HREEL spectrum is deconvoluted to remove the phonon multiple-loss peaks. We assign the 2580, 3280, and 3980 cm⁻¹ peaks to combination modes of the Ga–H stretch and phonon(s). Upon dosing with deuterium, the Ga–D bending mode is observed at 400 cm⁻¹. No vibrational peaks due to N–H (N–D) species are observed after H (D) exposure. We conclude that sputtered and annealed GaN(0001) is Ga-terminated.     

Emission of intermediate mass fragments in the heavy ion interaction of (14.0 MeV/u) Pb+Au

We have studied the heavy ion interactions of (14.0 MeV/u) Pb + Au using two threshold detectors, mica and CN-85. A thin layer of Au was deposited on each of the three mica and two CN-85 detector pieces. These target-detector assemblies were exposed to a beam of 14.0 MeV/u Pb ions having the fluence of 1.5×10⁶ cm² at GSI, Darmstadt, Germany. After removing the target material and etching the samples in appropriate etchants, we scanned 32.29 cm² and 24.97 cm² area of mica and CN-85, respectively. Based on the observed number of events of various multiplicities, we have determined the total as well as partial experimental reaction cross-sections. It is shown that a significant number of intermediate mass fragments are emitted alongwith the heavy fragments in the present reaction.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications

Ferroelectric SrBi₂Ta₂O₉ (SBT) thin films were grown on p-type (1 0 0) Si substrates by radio frequency sputtering technique. The crystallinity of the films was studied using grazing incidence X-ray diffraction pattern. The spectra showed the films were polycrystalline with dominant orientation along (1 1 5) plane. The surface morphology was investigated by atomic force microscope. The chemical composition was studied by Rutherford back-scattering, which yielded a near stoichiometric composition of SBT. The capacitance–voltage characteristics of Al/SBT/Si capacitors measured at 100 kHz showed a hysteresis nature with a clockwise rotation and the memory window of the hysteresis loop was 0.88 V with the gate voltage ±5 V. The interface trap density was calculated by using Hills method at room temperature and a value in the order of 10¹¹–10¹² eV⁻¹ cm⁻² was found depending on the crystallization temperature at midgap region.