Multilevel optical data recording methods on phase-change media

Multilevel data storage (ML) is a new method in the optical storage field, which is also a trend for improving the capability of future optical discs. This article introduces several ML methods based on phase-change media including pit depth modulation (PDM) and mark radial width modulation (MRWM). In addition, some disadvantages and advantages concerning the principle of these methods will be discussed. Finally, a new ML method will be advanced, through which the levels in one recording pit will be increased evidently.     

Ultrashort-laser-pulse-driven rewritable phase-change optical recording in Sb-based films

This paper reviews the work we have carried out over the last years on the development of ultrashort-laser-pulse-driven, rewritable, phase-change optical memories. The materials we have tailored for this application are non-stoichiometric, Sb-rich amorphous thin films, which can be crystallized upon irradiation with ultrashort laser pulses, showing a large optical contrast upon transformation. This result makes them very promising for the development of rewritable phase-change optical memories under ultrashort pulses, since the reversibility of the process has also been demonstrated. Adequate control of the heat-flow conditions has allowed us to achieve a full transformation time faster than 400 ps for crystallization/amorphization using 30-ps pulses. The crystallization threshold fluence has been found to decrease upon irradiation with pulses shorter than 800 fs, thus suggesting the relevance of high-electronic-excitation-induced processes in the amorphous-to-crystalline phase transition. This has been confirmed by the observation of an ultrafast, non-thermal phase transition occurring 200–300 fs after the arrival of the laser pulse at the surface, for fluences above the crystallization threshold. The presence of this transient phase conditions the final state induced therefore enabling the applicability of this material as a rewritable recording medium using femtosecond pulses. Received: 11 October 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: J.Solis@io.cfmac.csic.es     

Analysis of crystallization kinetics of sputtered SmCo based permanent magnetic films

Crystallization kinetics of the sputtered SmCo based permanent magnetic films was investigated by differential scanning calorimeter, x-ray diffraction, and atomic force microscope methods. The results show that the apparent activation energy for crystallization is observed as 173.7 kJ/mol, and the local activation energy for crystallization decreases with increasing crystal phase transformation fraction in non-isothermal crystallization. For isothermal crystallization, the apparent activation energy for crystallization is 159.8 kJ/mol. The local activation energy for crystallization exhibits non-monotonic dependence on the crystal phase transformation fraction. The crystallization mechanism is obtained from the investigation of Avrami exponent and microstructure.     

A study on the short—wavelength and high—numerical—aperture phase—change recording

In this paper, we discuss the phase-change recording at a short-wavelength (514nm) and a high numerical aperture (0.85). Effects of recording power and pulse width on the size of the recording marks are studied. The minimum recording mark with a length of approximately 220nm has been observed. The capacity of about 17GB for a single-layer disc of a 12cm diameter can be obtained. The maximum carrier-to-noise ratio reaches 45dB at a writing power of 13--14mW.     

相变光盘膜系计算和设计

本文提出一种计算相变型光盘膜系光学特性的方法.并以TeSbSe光记录介质为例,讨论了三层膜相变光盘的优化设计.     

Thickness-dependent crystallization behavior of fast-growth phase-change amorphous films

The crystallization behavior of amorphous films embedded in substrates with thickness of several nanometers is investigated based on a thermodynamic model. It is found that there is an optimum layer thickness where the crystallization speed of the films is maximized with the lowest energy barrier for crystallization. This is induced by an energetic change from glass/substrate interface energy to crystal/substrate interface energy as the crystal size is larger than the film thickness during the crystallization. Thus, the crystallization speed in thin films is affected by its thickness.     

Effect of WO3 on the glass transition and crystallization kinetics of borotellurite glasses

Tellurite glasses of the system xWO₃–75TeO₂–(25 ? x)B₂O₃ (0 ≤ x ≤ 25 mol. %) were prepared and studied by differential thermal analysis to explore the effect of WO₃ on their glass transition and crystallization kinetics. The crystallization kinetics was studied under non-isothermal conditions using the formal theory of transformations for heterogeneous nucleation. The crystallization results were analyzed and both the activation energy of the crystallization process and the crystallization mechanism characterized. The phases into which the glass crystallizes were identified by X-ray diffraction. Diffractograms of the transformed material indicate the presence of microcrystallites of α-tellurite, Te_0.95W_0.05O_2.05, Te₂W and B₂O₃ in the amorphous matrix.     

Crystallization kinetics and thermal stability of Se98-x Zn2In x chalcogenide glasses

In this paper, we report on the non-isothermal crystallization kinetics of Se_{98 ?x} Zn₂In _x (0 ≤ x ≥ 10) chalcogenide glasses. The onset crystallization activation energy E _c, peak crystallization activation energy E _p and overall crystallization activation energy E have been determined by different approaches. The values of E _c, E _p and E have minima at a composition corresponding to 6 at% In. However the stability factor S and the crystallization rate constant stability factor K have a maximum and a minimum, respectively, at in the same composition. The nucleation and growth order parameter n, and the dimension order parameter m, are also determined and discussed for the present glasses.     

An investigation of the crystallization kinetics of zeotype SAPO-34 crystals synthesized by hydrothermal and sonochemical methods

The kinetics study of SAPO-34 crystallization from a gel containing morpholine as a structure directing agent (SDA) was investigated by means of X-ray diffraction (XRD) patterns in order to determine the kinetics parameters, i.e. induction times, rate constants, frequency factors, and activation energies for the induction and growth stages. The kinetics data of growth period were determined by using the Avrami–Erofeev nucleation growth model. SAPO-34 molecular sieves were synthesized by using both sonochemical-assisted hydrothermal and conventional hydrothermal heating at temperatures of 180, 200, and 220 °C to elucidate the influence of crystallization method on the crystallization kinetics of SAPO-34. The activation energy values indicated that the crystal growth mechanism was enhanced for samples synthesized sonochemically, whereas the induction energy was not greatly affected by using sonication process. Also, the kinetic compensation effect (KCE) was considered in order to obtain the isokinetic temperature.     

Non-isothermal crystallization kinetics of alkyl-functionalized graphene oxide/high-density polyethylene nanocomposites

Dodecyl amine-functionalized graphene oxide (DA-GO) was obtained via an amidation reaction. The results of X-ray diffraction and Fourier-transform infrared spectroscopy verified that long alkyl chains of DA were successfully grafted on the GO sheets. Transmission electron microscope and scanning electron microscope techniques illustrated that homogeneously dispersed DA-GO/high-density polyethylene (HDPE) nanocomposites were obtained. The effects of DA-GO on the non-isothermal crystallization of HDPE were then investigated by differential scanning calorimetry (DSC) at various cooling rates (2, 5, 10, and 20?°C/min). Significant increase in the onset crystalline temperature (T_o) and the peak crystallization temperature (T_p) of HDPE incorporating DA-GO indicated the strong nucleating ability of DA-GO. The investigation of half-time crystallization time (t_1/2) demonstrated that crystallization rate of HDPE consisting of DA-GO is faster than that of pure HDPE at a given cooling rate. Ozawa, Avrami, and the combined Avrami–Ozawa methods (Mo) were used for analyzing experimental data. The Mo approach was successful in describing the non-isothermal crystallization process of DA-GO/HDPE nanocomposites. The results indicated that low DA-GO content accelerates the crystallization of HDPE, while higher content hinders the crystallization of HDPE.     

硫酸甲醇体系中钽的电解动力学

 为了探索钽的电解动力学行为,在硫酸甲醇电解液中对钽进行了电解抛光的实验研究,测定了电解液配比、电压、搅拌速率对钽薄膜减薄速率的影响;通过测定温度对反应速率的影响,计算了阿仑尼乌斯（S.A.Arrhenius）活化能。研究结果表明：温度在0 ℃,硫酸甲醇体积比为1∶7时,钽的电解行为符合典型金属极化行为规律;在电压10~20 V的范围内,搅拌速率大于8 m/s时,减薄速率稳定为11.45 μm/min;当搅拌速率小于8 m/s时,扩散传质控制电解过程,当大于8 m/s后,电解过程为非扩散控制。温度对反应速率的影响表明,钽在硫酸甲醇电解液中的电解行为符合S.A.Arrhenius公式,活化能为15.77 kJ·mol^-1。     

致冷镜相变材料的实验研究及应用分析

 研发了一种用于相变致冷的高热导率、固液转换时体积变化率小以及膨胀系数与Si基底接近的镓基相变合金材料;在实验室里模拟实际工况,对镓基相变合金材料试件进行了实验测试,确定某一组分编号可基本满足实际使用需求的镓基相变合金材料。按照实际应用条件对在强激光条件下填充在硅镜内部的该相变材料的应用效果进行了有限元的仿真计算, 结果表明：在初始温度为298 K的真空绝热环境中,热流密度为0.198 4 W/mm²,采用该镓基相变合金材料能够将镜面温度控制在313 K,抑制了镜面的热畸变。     

Nb添加对Cu-Zr非晶合金玻璃转变和晶化动力学的影响

采用铜模吸铸法制备出直径为2 mm的Cu_50.3Zr_49.7-xNb_x(x=0,2)大块非晶合金，利用示差扫描量热分析(DSC)研究了2at%Nb元素添加对Cu-Zr非晶合金玻璃转变动力学和晶化动力学的影响，发现含Nb合金具有较低的脆性指数，和较高的晶化激活能.这表明微量Nb的添加提高了该二元Cu基非晶合金过冷金属液相的热稳定性，从而有利于其非晶合金的形成. 关键词： Cu-Zr非晶合金 Nb添加 玻璃转变动力学 晶化动力学     

Elucidation of the crystallization kinetics for sodium-alumino-silicate glasses containing different amounts of manganese oxide

The glass samples [40SiO₂?+?5Al₂O₃?+?{55???x}Na₂O?+?xMnO₂] where x?=?0.05, 0.2, 0.4, 0.6, 0.8, and 1?mol% MnO₂ before and after being heat treated were subjected to X-ray diffraction. The diffraction lines provided clear evidence of the nucleation and growth, which are characteristic of sodium silicate phase. Crystallization studies were conducted using differential thermal analysis. Crystallization peak temperatures were identified and the transformed fractions were determined. Both the rate of growth, K ₀, and the activation energy, E, depend on the influence of manganese ions in the glass network as a modifier or as a former and the manganese content. The values of the Avrami parameter, n, were calculated using two methods and were in excellent agreement. The process of nucleation and growth rate depends on the manganese content.     

Crystallization kinetics of a-Se,part 4: thin films

Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100–2350?nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.     

Optical properties and crystallization of AgInTeSbGe phase-change optical disk media

AgInTeSbGe thin films were deposited by the dc sputtering method. Due to germanium doping in the AgInTeSb film, new Ag₂Te and Ge₂Sb₂Te₅ crystalline phases were formed. The crystallization temperature and the activation energy of the AgInTeSbGe thin film increased manifestly with the addition of Ge. The refractive index n and the extinction coefficient k of the AgInTeSbGe film in the amorphous and crystalline states were measured. The reflectivity contrast of the AgInTeSbGe phase-change optical disk was greater than %30 in almost the whole visible region. A minimum recording mark of about 220 nm in length was recorded using the AgInTeSbGe thin film as the recording medium. The reflectivity contrast of the minimum recording mark was about %25. PACS 42.70.Ln; 61.72.Ww; 78.66.Li; 81.30.Hd     

Effects of ultrasonic irradiation on crystallization kinetics,morphological and structural properties of zeolite FAU

In this work, NaX zeolite was synthesized and the effect of ultrasound irradiation on reaction kinetics, morphological and structural properties was investigated. Ultrasound was applied, by using a plate transducer (91.8 kHz), for the first time during the crystallization of zeolite NaX, at high temperature, varying the irradiation moment and its duration. Furthermore, ultrasound was applied after the crystallization by a horn-type transducer (20–24 kHz) at low temperature. The effects of irradiated volume (100–300 mL), sonication time (2–10 min) and ultrasound power (10–200 W) were studied with a power intensity up to 100 W/cm². It was found that the application of ultrasound during the first hour of crystallization resulted in 20% reduction of reaction time compared to a standard crystallization. Ultrasound can also reduce the agglomeration degree of the final powder by combining high power and long sonication time. After 5 min sonication time at 0.3 W/mL, the tapped density of the powder was increased by 10%, from 0.37 to 0.41 g/mL. Finally, by scanning electron microscopy (SEM) it was demonstrated that ultrasound can disrupt the agglomerates without affecting the morphology of individual crystals.     

Isothermal Crystallization Properties of Polyamide 6 / Hexagonal Boron Nitride Nanocomposites

Hexagonal boron nitride was adopted as a heterogeneous nucleation agent to fabricate polyamide 6 based nanocomposite films via a solution casting method. Isothermal crystallization behaviors of the as-prepared films were measured by using differential scanning calorimetry. Results showed that both the crystallization temperature and fillers loading greatly affected the crystallization process of the as-prepared samples. The crystallization nucleation and growth mechanism did not change during the initial stage of crystallization. The halftime of crystallization gradually increased with increasing crystallization temperature. Moreover, it decreased first and then increased with increasing the fillers loading at low crystallization temperature, while it decreased gradually at high crystallization temperature. Furthermore, the crystallization activation energy of the as-prepared samples gradually decreased with increasing fillers loading.     

硫酸甲醇体系中钽的电解动力学

为了探索钽的电解动力学行为,在硫酸甲醇电解液中对钽进行了电解抛光的实验研究,测定了电解液配比、电压、搅拌速率对钽薄膜减薄速率的影响;通过测定温度对反应速率的影响,计算了阿仑尼乌斯（S.A.Arrhenius）活化能。研究结果表明：温度在0 ℃,硫酸甲醇体积比为1∶7时,钽的电解行为符合典型金属极化行为规律;在电压10~20 V的范围内,搅拌速率大于8 m/s时,减薄速率稳定为11.45 μm/min;当搅拌速率小于8 m/s时,扩散传质控制电解过程,当大于8 m/s后,电解过程为非扩散控制。温度对反应速率的影响表明,钽在硫酸甲醇电解液中的电解行为符合S.A.Arrhenius公式,活化能为15.77 kJ·mol-1。