Investigations of the exciton condensate

Recent experiments on quantum Hall bilayers in the vicinity of total filling factor 1 (ν_T=1) have revealed many exciting observations characteristic of a superfluidic exciton condensate. We report on our experimental work involving the ν_T=1 exciton condensate in independently contacted bilayer two-dimensional electron systems. We observe previously reported phenomena as a zero-bias resonant tunneling peak, a quantized Hall drag resistivity, and in counter-flow configuration, the near vanishing of both ρ_xx and ρ_xy resistivity components. At balanced electron densities in the layers, we find for both drag and counter-flow current configurations, thermally activated transport with a monotonic increase of the activation energy for d/ℓ_B<1.65 with activation energies up to 0.4 K. In the imbalanced system the activation energies show a striking asymmetry around the balance point, implying that the gap to charge excitations is considerably different in the separate layers that form the bilayer condensate. This indicates that the measured activation energy is neither the binding energy of the excitons, nor their condensation energy.     

Nuclear-spin-lattice relaxation in a bilayer quantum Hall system

We examined the electron spin degree of freedom around the total Landau-level filling factor ν=1 in a bilayer system via nuclear spins. In a balanced bilayer system, nuclear-spin-lattice relaxation rate 1/T₁, which probes low-energy electron spin fluctuations, increases gradually as the system is driven from the quantum Hall (QH) state through a phase transition to the compressible state. This result demonstrates that the electron spin degree of freedom is not frozen either in the QH or compressible states. Furthermore, as the density difference between the two layers is increased from balanced bilayer to monolayer configurations, 1/T₁ around ν=1 shows a rapid yet smooth increase. This suggests that pseudospin textures around the bilayer ν=1 system evolves continuously into the spin texture for the monolayer system.     

Vertical transport and relaxation mechanisms in δ-doping superlattices

We report on electron transport in growth direction and relaxation mechanisms in δ-doped GaAs-superlattices. In order to investigate pure electron transport, n-type δ–n–i–p–i structures sandwiched between two n⁺-cladding layers have been investigated, with doping induced barrier heights ΔV smaller than the band gap energy E_g of the host material. An exponential increase of the current is expected with increasing bias due to tunneling through a decreasing barrier. At elevated temperatures, thermally activation over the barriers becomes possible. A simple WKB-model describes the experimental data reasonably well. Moreover, a current step appears in the I–V characteristics at a critical field which is clearly below the breakthrough value. Opto-electrical measurements confirm the existence of holes in the structure at fields larger than the critical field. A model is presented which explains the photocurrent and electroluminescence measurements consistently. The key mechanism is based on a few ballistically traveling electrons that can gain enough energy for interband avalanche multiplication.     

Bilayer counterflow transport at filling factor 1 in the strong interacting regime

We review magneto-transport properties of interacting GaAs bilayer hole systems, with very small inter-layer tunneling, in a geometry where equal currents are passed in opposite directions in the two, independently contacted layers (counterflow). In the quantum Hall state at total bilayer filling ν=1 both the longitudinal and Hall counterflow resistances tend to vanish in the limit of zero temperature, suggesting the existence of a superfluid transport mode in the counterflow geometry. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρ_xy) decreases at a given temperature while the counterflow longitudinal resistivity (ρ_xx), which is much larger than ρ_xy, hardly depends on density. Our data suggest that the counterflow dissipation present at any finite temperature is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.     

Resonance states in 12C and α-particle condensation

The states with J^π = 0⁺, 2⁺, and 4⁺ of ¹²C with excitation energies less than about 15 MeV are investigated with the alpha condensate wave function with spatial deformation and by using the method of ACCC (analytic continuation in the coupling constant) which is necessary for a proper treatment of resonance states. The calculated energy and width of the recently observed 2₂⁺ state are found to be well reproduced. The obtained 2₂⁺ wave function has a large overlap with a single condensate wave function of 3α gas-like structure. The density distribution is shown to be almost the same as that of the 0₂⁺ state that is regarded as a 3α Bose-condensed state, if the energy of the 2₂⁺ state is scaled down to the same value as the one of the 0₂⁺ state. Furthermore, the kinetic energy, nuclear interaction energy, and Coulomb interaction energy of the calculated 2₂⁺ state are shown to be very similar to those of the 0₂⁺ state. We conclude that the 2₂⁺ state has a structure similar to the 0₂⁺ state of Bose-condensate character with a dilute 3α gas-like structure. In addition, the resonance states, 0₃⁺, 0₄⁺, 4₂⁺, are also discussed.     

Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO₂ layers. Thermally grown 80 nm thick SiO₂ layers were implanted with Ge ions at energies of 30–50 keV to peak concentrations of 1–6 at%. Subsequently rapid thermal annealing was performed at 1000°C for 6, 30 and 150 s under a nitrogen atmosphere in order to form luminescence centers. A combination of capacitance–voltage (CV) and current–voltage (IV) methods was used for the investigation of the trapping properties. It was found that at electric fields <8 MV/cm electron trapping dominates while at higher electric fields which are typically required for the EL operation of the devices positive charge trapping occurs. It is assumed, that the trapping sites which are responsible for the trapping of the positive charge are in strong relation to the defects causing the luminescence.     

Multiparton collisions and multiplicity distribution in high-energy collisions

We discuss the multiplicity distribution for the highest accessible energies of pp- and -interactions from the point of view of multiparton collisions. The inelastic cross sections for single, σ₁, and multiple (double and, presumably, triple), σ₂ parton collisions are calculated from the analysis of experimental data on the multiplicity distribution up to Tevatron energies. It is found that σ₁ becomes energy independent while σ₂ increases with for GeV. The observed growth of p with multiplicity is attributed to the increasing role of multiparton collisions for the high-energy -inelastic interactions. σ₂₊₃ reproduces quite well the cross-section for the mini-jet production.     

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al_0.3Ga_0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E_LO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E_LO+(E₂−E₁), where E₂, and E₁ are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm⁻¹ around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.     

Low energy electron attachment to C<Subscript>60</Subscript>

Low energy electron attachment to the fullerene molecule (C₆₀) and its temperature dependence are studied in a crossed electron beam–molecular beam experiment. We observe the strongest relative signal of C₆₀ anion near 0 eV electron energy with respect to higher energy resonant peaks confirming the contribution of s-wave capture to the electron attachment process and hence the absence of threshold behavior or activation barrier near zero electron energy. While we find no temperature dependence for the cross-section near zero energy, we observe a reduction in the cross-sections at higher electron energies as the temperature is increased, indicating a decrease in lifetime of the resonances at higher energies with increase in temperature.     

Electron heating in a submicron-size n GaAs wire

We have studied electron heating in a submicron-size GaAs wire from 4.2 K to 50 K. We find that the energy relaxation rate for the electrons is of the form τ_E⁻¹ = α + βT_eⁿ where α, β are constants and T_e is the electron temperature. We associate the temperature-independent term with a quasi-elastic surface scattering process in which an electron losses 1% of its energy at each collision. The temperature dependent term may be due to electron-phonon scattering. It is possible to fit the data to 2 < n < 3.     

Grain boundary deformation in Cd-Zn and Zn-Al alloys

Activation energies for creep have been measured on fine-grained and coarse-grained specimens of pure cadmium, zinc, and Cd-Zn and Zn-Al alloys in the temperature range (0·4–0·8)T _m. It is found that in the case of fine-grained specimens the activation energies for creep are equal to the activation energies for grain boundary diffusion in cadmium and zinc, and in the case of coarse-grained specimens — to that of volume self-diffusion.     

Free-to-bound radiative recombination in highly conducting InN epitaxial layers

We present a theoretical simulation of near-band-edge emission spectra of highly conducting n-InN assuming the model of ‘free-to-bound’ radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails. We also study experimental photoluminescence (PL) spectra of highly conducting InN epitaxial layers grown by MBE and MOVPE with electron concentrations in the range (7.7×10¹⁷–6×10¹⁸) cm⁻³ and find that the energy positions and shape of the spectra depend on the impurity concentration. By modeling the experimental PL spectra of the InN layers we show that spectra can be nicely interpreted in the framework of the FBRR model with specific peculiarities for different doping levels. Analyzing simultaneously the shape and energy position of the InN emission spectra we determine the fundamental bandgap energy of InN to vary between E_g=692 meV for effective mass m_n0=0.042m₀ and E_g=710 meV for m_n0=0.1m₀.     

Energy dependence of the quasiparticle lifetime in a 2DES

We present a novel technique for measuring the lifetime of quasiparticle excitations of a 2DES by investigating the tunnelling into a quantum dot from a 2DES over an extended range of energy from the Fermi energy to the sub-band edge. We find that the lifetime τ_qp, of a quasihole excitation, caused by removing an electron from a 2DES state with energy below the Fermi energy E_F, has the form τ_qp=α/, where α is a constant of order unity.     

Ba2YCu3O7−δ crystal surface layers: Orthorhombic splitting, dislocations, and chemical etching

We find by transmission electron diffraction that the orthorhombic splitting of the upper surface layers ( <1 μm) of single crystal Ba₂YCu₃O_7−δ is reduced, differing by 10 to 30 percent from the bulk value. We also find by transmission electron microscopy that in general the surfaces are of inferior quality and, thus, not representative of the bulk. These results have important consequences for those experiments that probe only the upper surface layers. By etching with Br/ethanol and HClO₄/NaClO₄ the poor quality surfaces are removed.     

Eley–Rideal reaction dynamics between O atoms on β-cristobalite (1 0 0) surface: A new interpolated potential energy surface and classical trajectory study

We present a theoretical study of the collisions of atomic oxygen with O-precovered β-cristobalite (1 0 0) surface. We have constructed a multidimensional potential energy surface for the O₂/β-cristobalite (1 0 0) system based mainly on a dense grid of density functional theory points by using the interpolation corrugation-reducing procedure. Classical trajectories have been computed for quasithermal (100–1500 K) and state-specific (e.g., collision energies between 0.01 and 4 eV) conditions of reactants for different O incident angles (θ_v). Atomic sticking and O_2(adsorbed) formation are the main processes, although atomic reflection and Eley–Rideal (ER) reaction (i.e., O₂ gas) are also significant, depending their reaction probabilities on the O incident angle. ER reaction is enhanced by temperature increase, with an activation energy derived from the atomic recombination coefficient (γ_O(θ_v = 0°, T)) equal to 0.24 ± 0.02 eV within the 500–1500 K range, in close agreement with experimental data. Calculated γ_O(θ_v = 0°, T) values compare quite well with available experimental γ_O(T) although a more accurate calculation is proposed. Chemical energy accommodation coefficient β_O(T) is also discussed as a function of ER and other competitive contributions.     

The Effect of Point Defects on the Activation Processes in Semiinsulating GaAs Irradiated by Si28 Ions

The layered concentration, concentration profile, and mobility of electrons in the Si²⁸ ion-implanted layers (IIL) of semiinsulating GaAs are investigated. The specific resistance of the latter is also studied upon radiation annealing (RA) in the temperature range 590–800 °C using electron energies higher than the threshold energy of defect formation. The IIL are shown to form during RA at much lower temperatures. The layers exhibit high electrical activation of Si²⁸ ions, with the electron-concentration profile corresponding to the calculated one, and a low concentration of residual defects limiting the electron mobility. The radiation annealing increases the resistance of semiinsulating GaAs. The calculations show that these effects are due to the Frenkel pairs (FP) generated by radiation. A high degree of ionization of GaAs atoms significantly reduces energies of potential barriers of diffusion, FP recombination, and electrical impurity activation.     

Electronic structure and spectrum of Cr3+ in LiCaAlF6

The electronic structure and spectrum of Cr³⁺ in LiCaAlF₆ are investigated by using the discrete variatitional-local density functional (DV-LDF) method with embedded cluster model. The clusters (CrF₆)^3– withC ₃,D _3d andO _h point group symmetries embedded in the crystal are treated. The one-electron energy levels, densities of states, orbital populations, spin polarization splittings and energies of some terms are calculated. The results show that the relaxation of F^– ions around the Cr³⁺ impurity is inevitable, and that theD _3d andO _h (CrF₆)^3– clusters, with an extended bond-lengthR(Cr–F) chosen to be equal to 1.88 Å can represent this relaxation in a much better way. All the ligand-field transition energies, which are obtained from the transition-state energy and the Griffith parameters, as yielded by a restricted one-electron DV-LDF calculation, compare well with the experimental ones.     

Preparation and characterization of molybdenum diselenide thin films

MoSe₂ layers, synthesized by annealing a molybdenum foil under selenium pressure, have been investigated by scanning electron microscopy, X-ray analysis, electron spectroscopy (XPS) and electrical resistance measurements. It has been found that stoichiometric layers are obtained after appropriate processing. The films crystallize in the hexagonal structure. The crystallites develop preferentially along the c axis. The binding energies deduced from the XPS lines were found to be in good agreement with those of the reference powder. The electrical resistance is governed by hopping conduction in the low temperature range (80–250 K) and by grain boundary scattering mechanisms at higher temperatures.     

The electronic structure of KMnO4 investigated by photoemission and electron-energy-loss spectroscopy

From photoemission and electron-energy-loss data the following picture of KMnO₄, with Mn^VII (with a formal charge state Mn⁷⁺ (3d ⁰)) tetrahedrally surrounded by four O^2–-ions, is deduced: strong covalent bonding between Mn^VII and O^2– leads to a considerable occupation of the Mn-3 d shell. The ground state of the (MnO₄)^–1 molecule is an orbital and spin singlet as seen by the absence of any multiplet splitting in the Mn core levels. The valence band shows a four peak structure extending form 4 eV to 8 eV below the Fermi energy. The first peak at 4.2 eV has mainly O-2p character. The remaining peaks are of strongly mixed Mn-3d/O-2p character due to the covalent bonding. This mixing decreases with increasing binding energy. The electron energy loss data show a variety of structures between 2 eV and 10 eV independent of the primary electron energy which defines them as dipole allowed charge-transfer transitions. An additional excitation at 1.8 eV decreases quickly in intensity with increasing electron energy which classifies it as a dipole or spin forbidden transition in the compound. This energy is close to the value of 1.6 eV reported for the activation energy observed in electrical transport data. The results are compared to quantum chemical molecular orbital calculations of the (MnO₄)^–1 molecule.Physics Department, Allahabad University Allahabad 211002, India