Ferromagnetic behaviour in semiconductors: a new magnetism in search of spintronic materials

The future of the spintronic technology requires the development of magnetic semiconductor materials. Most research groups have focused on diluted magnetic semiconductors because of the promising theoretical predictions and initial results. In this work, the current experimental situation of ZnO based diluted magnetic semiconductors is presented. Recent results on unexpected ferromagnetic-like behaviour in different nanostructures are also revised, focusing on the magnetic properties of Au and ZnO nanoparticles capped with organic molecules. These experimental observations of magnetism in nanostructures without the typical magnetic atoms are discussed. The doubts around the intrinsic origin of ferromagnetism in diluted magnetic semiconductors along with the surprising magnetic properties in absence of the typical magnetic atoms of certain nanostructures should make us consider new approaches in the quest for room temperature magnetic semiconductors.     

Diffusion theory of spin injection through resistive contacts

Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are rather cumbersome for the junctions including such contacts. A technique based on deriving a system of self-consistent equations for the coefficients of spin injection, γ, through different contacts are developed. These equations are concise when written in the proper notations. Moreover, the resistance of a two-contact junction can be expressed in terms of γ's of both contacts. This equation makes calculating the spin valve effect straightforward, allows to find an explicit expression for the junction resistance and to prove that its nonequilibrium part is positive. Relation of these parameters to different phenomena like spin-e.m.f. and the contact transients is established. Comparative effect of the Coulomb screening on different parameters is clarified. It is also shown that the spin non-conservation in a contact can have a dramatic effect on the non-equilibrium resistance of the junction. Received 2 May 2002 / Received in final form 26 July 2002 Published online 15 October 2002 RID="a" ID="a"Also at the Department of Physics, MIT, Cambridge, Massachusetts 02139, USA e-mail: erashba@mailaps.org     

Effect of pressure on the energy band gaps of wurtzite GaN and AlN and electronic properties of their ternary alloys AlxGa1−xN

Using the Empirical Pseudopotential Method (EPM) combined with an improved Virtual Crystal Approximation (VCA), where the effect of compositional disorder is included as an effective periodic potential, we have calculated the electronic band structure of GaN and AlN under hydrostatic pressure up to 200 kbar and 160 kbar, respectively. The behavior of electronic properties of their alloys Al_xGa_1−xN in the wurtzite structure have been predicted at zero pressure, for the entire range of alloy concentrations.     

Quantum simulations of spin-relaxation and transport in copper

A quantum equation of motion method is applied to simulate conduction electron spin-relaxation and transport in the presence of the spin-orbit interaction and disorder. A spin-relaxation time of 25ps is calculated for Cu with a realistic low temperature resistivity of 3.2 μΩ cm – corresponding to a spin-diffusion length of about 0.4 μm. Spin-relaxation in a finite nanocrystallite of Cu is also simulated and a short spin-relaxation time (0.47 ps) is calculated for a crystallite with 7% surface atoms. The spin-relaxation calculated for bulk Cu is in good agreement with experimental evidence, and the dramatic nanocrystallite effect observed has important implications for nano-spintronic devices.     

Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite

The influence of dc biasing current on temperature dependence of resistance of La_0.67Ba_0.33MnO₃ bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal-insulator transition temperature (T_MI) and decreases when the temperature is either increased or decreased from T_MI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at T_MI.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

With the aim of establishing the mechanisms for spontaneous recombination and lasing, we have studied InGaN/GaN multiple quantum well heterostructures emitting in the 450 nm region and grown by organometallic vapor-phase epitaxy on silicon substrates using several mechanical stress-reducing AlN/AlGaN inserts. Photoluminescence (PL) excitation spectroscopy, the non-monoexponential nonequilibrium carrier relaxation kinetics, and x-ray diffractometry data indicate significant inhomogeneity of the InGaN solid solution in quantum wells of these structures. The dependences of the position of the photoluminescence spectra on the excitation level and the temperature, the large shift in the photoluminescence, gain, and lasing spectra relative to the absorption edge allow us draw the conclusion that the dominant contribution to spontaneous and stimulated recombination comes from nonequilibrium charge carriers localized in indium-rich InGaN clusters. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 94–101, January–February, 2008.     

Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers

We investigate characteristics of spin tunneling time in ZnSe/Ze_1-xMn_xSe multilayers under the influence of both an electric field and a magnetic field. The results indicate that the tunneling time shows complicated oscillations and significant spin separation for electrons with different spin orientations traversing semimagnetic semiconductor heterostructures. It is also shown that the tunneling time exhibits obvious asymmetry in opposite tunneling directions for electrons tunneling through asymmetric heterostructures, which mainly occurs in resonant regions. The degree of the asymmetry of the tunneling time is not only spin-polarization dependent but also external-field induced. Received 10 July 2001     

Studies of the third-order nonlinear optical susceptibility for InxGa1−xN/GaN cylinder quantum dots

The resonant third-order susceptibilities at various directions (both parallel and vertical to Z-axis) in self-assembled quantum dots (QDs) have been investigated. The nonlinear susceptibilities associated with the intraband transition in the conduction band are theoretically calculated for wurtzite In_xGa_1−xN/GaN-strained cylinder QDs. The confined wave functions and energies of electrons in the dots have been calculated in the effective-mass approximation by solving the 3D Schrödinger equation, in which a strong built-in electric field effect due to the piezoelectricity and spontaneous polarization has been taken into account. Furthermore, it is shown that the magnitude and the resonant position of the nonlinear susceptibility χ⁽³⁾(3ω) strongly depend on the dots’ size as well as size distribution.     

High-frequency dynamics of Co/Fe multilayers with stripe domains

Within the framework of two-dimensional (2D) numerical micromagnetic simulations, the equilibrium magnetization configuration and the high-frequency (0.1–30 GHz) linear response of Co/Fe multilayers have been investigated in detail. Due to the perpendicular anisotropy of Co layers, a stripe domain pattern can develop through the whole multilayer, the characteristics of which depend on the magnitude of the perpendicular anisotropy, the respective thicknesses of Co and Fe layers and the number of Co/Fe bilayers in the stack. One of the most striking features associated with the layering effect is the ripening aspect of the static magnetization configuration across the multilayers which induces complicated dynamic susceptibility spectra including surface modes and volume modes strongly confined within the inner Fe layers. The effect of the cubic magnetocrystalline anisotropy of Fe layers and the influence of a nonuniform perpendicular magnetic anisotropy within the Co layers on the static and dynamic magnetic properties of Co/Fe multilayers are then analyzed quantitatively.     

Influence of Co, Ni and Zn substitution for Cu on the structural and superconducting properties of (Hg0.7Cr0.3)Sr2CuO4+δ

The effect of Co, Ni and Zn substitutions for Cu on the phase stability and superconducting properties of (Hg_0.7Cr_0.3)Sr₂CuO_4+δ was investigated. X-ray diffraction (XRD) revealed that both Co and Zn are soluble in the (Hg_0.7Cr_0.3)Sr₂CuO_4+δ material up to about 5% of the Cu content, whereas the solubility of Ni is extended up to 10%. Electrical resistivity and magnetic susceptibility measurements show that the value of the superconducting critical temperature T_c decreases linearly with the impurity content. The depression of T_c indicates that the suppression of the superconductivity in Co- and Ni-substituted samples is much stronger than that in Zn-substituted ones. The residual resistivity scales linearly with the doping level as expected from the impurity scattering due to disorder. Some possible explanations for the stronger suppression of T_c by the Co and Ni substitution than by Zn substitution are provided.     

Magnetostatic modes in coupled antiferromagnet/ferromagnet bilayers

We study the influence of interface effects on the magnetostatic modes propagating in a coupled ferromagnetic/antiferromagnetic bilayer. We assume that the magnetic layers are thick enough to be described by the bulk parameters and they are coupled through the interaction between the magnetic moments located at the interface. We use a phenomenological approach taking into account the presence of different magnetic layers in the system to calculate the modified dynamical response of each material. We use the corrected magnetic permeability of the layers to obtain a correlation between the interface characteristics and the physical behavior of the magnetic excitations propagating in the system.     

Effect on alloying at the Fe/Ni(001) interfaces on the interlayer exchange coupling

We investigate the stability of various ordered FeNi alloys at the interfaces of Fe/Ni superlattices by using ab initio density functional calculation. We consider an Fe_0.5Ni_0.5 ordered alloy of one or two monolayers thick at different positions beyond the interface and the possibility of an interdiffusion of a complete monolayer of Ni(Fe) in Fe(Ni) slab. An interfacial atomic layer of Fe_0.5Ni_0.5 exchanged with its adjacent Ni monolayers, leading to a buffer zone of Ni₃Fe composition is found to be the most stable structural configuration. For this atomic arrangement we investigate the magnetic profile and the resulting interlayer exchange coupling between the Ni slabs for Fe spacer thickness of 0 to 4 monolayers.