Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

Quantum spin Hall effect in a square-lattice model under a uniform magnetic field

We study a toy square-lattice model under a uniform magnetic field. Using the Landauer-Bttiker formula, we calculate the transport properties of the system on a two-terminal, a four-terminal and a six-terminal device. We find that the quantum spin Hall (QSH) effect appears in energy ranges where the spin-up and spin-down subsystems have different filling factors. We also study the robustness of the resulting QSH effect and find that it is robust when the Fermi levels of both spin subsystems are far away from the energy plateaus but is fragile when the Fermi level of any spin subsystem is near the energy plateaus. These results provide an example of the QSH effect with a physical origin other than time-reversal (TR) preserving spin-orbit coupling (SOC).     

Observation of the quantum Hall effect in cleaved InAs surfaces

We have performed the in-plane magnetotransport measurements on the two-dimensional electron gas at the cleaved p-InAs (1 1 0) surface by deposition of Ag. The surface electron density N_s is determined from the Hall coefficient at . The coverage dependence of N_s is well explained by the assumption that each adsorbed Ag atom denotes one electron into InAs until the surface Fermi level reaches the adsorbate-induced donor level. The electron mobility μ is about and does not show a clear dependence on the coverage over . In the high-magnetic field regime of B>1/μ, Shubnikov–de Hass oscillations were observed. A beating pattern due to the strong spin–orbit interaction appears for high N_s. For lower N_s of , an apparent quantum Hall plateau for ν=4 and vanishing of the longitudinal resistivity were observed around .     

Semiclassical Boltzmann theory of spin Hall effects in giant Rashba systems

For the spin Hall effect arising from strong band-structure spin–orbit coupling, a semiclassical Boltzmann theory reasonably addressing the intriguing disorder effect called side-jump has not yet been developed. This paper describes such a theory in which the key ingredient is the spin-current counterpart of the semiclassical side-jump velocity (introduced in the context of the anomalous Hall effect). Applying this theory to spin Hall effects in a two-dimensional electron gas with giant Rashba spin–orbit coupling, largely enhanced spin Hall angle is found in the presence of magnetic impurities when only the lower Rashba band is partially occupied.     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Thermoelectric response of spin polarization in Rashba spintronic systems

Motivated by the recent discovery of a strongly spin–orbit-coupled two-dimensional (2D) electron gas near the surface of Rashba semiconductors BiTeX (X= Cl, Br, I), we calculate the thermoelectric responses of spin polarization in a 2D Rashba model. By self-consistently determining the energyand band-dependent transport time, we present an exact solution of the linearized Boltzmann equation for elastic scattering. Using this solution, we find a non-Edelstein electric-field-induced spin polarization that is linear in the Fermi energy E_F when E_F lies below the band crossing point. The spin polarization efficiency, which is the electric-field-induced spin polarization divided by the driven electric current, increases for smaller E_F .We show that, as a function of E_F, the temperaturegradient-induced spin polarization increases continuously to a saturation value when EF decreases below the band crossing point. As the temperature tends to zero, the temperature-gradient-induced spin polarization vanishes.     

磁性拓扑绝缘体中的量子化反常霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体（Bi2Se3, Bi2Te3 和 Sb2Te3）薄膜中掺杂过渡金属元素（Cr 或 Fe）实现量子化反常霍尔效应的方法.     

量子霍尔效应

从经典的霍尔效应开始,比较系统地、深入浅出地介绍了量子霍尔效应及其所涉及的一些新概念和实际应用。     

异常霍尔效应和自旋霍尔效应

异常霍尔效应和自旋霍尔效应是在常规霍尔效应的基础上引发出的2种新现象.本文介绍了这2种现象及其原理和潜在的应用.     

Rashba effect in an asymmetric quantum dot in a magnetic field

We derive an expression for the total spin-splitting energy in an asymmetric quantum dot with ferromagnetic contacts, subjected to a transverse electric field. Such a structure has been shown by one of us to act as a spintronic quantum gate with in-built qubit readers and writers (Phys. Rev. B61, 13813 (2000)). The ferromagnetic contacts result in a magnetic field that causes a Zeeman splitting of the electronic states in the quantum dot. We show that this Zeeman splitting can be finely tuned with a transverse electric field as a result of nonvanishing Rashba spin–orbit coupling in an asymmetric quantum dot. This feature is critical for implementing a quantum gate.     

Ballistic transport under quantum Hall effect conditions

The paper addresses details of the single-particle electron spectrum ?_l(p)${?}_l(p)$ in narrow Coulomb channels (l is the transverse spectrum part discrete index and p   is the continuous longitudinal electron momentum). The channel is said to be narrow if differences between transverse spectrum branches ?_l(p)${?}_l(p)$ are larger than temperature. Considered are two extreme cases with respect to magnetic field. For the first case where ?_F≥?ω_c${?}_F\ge \mathit{?}{\omega }_c$, the spectrum ?_l(p)${?}_l(p)$ first calculated by Stern et al. numerically is obtained with approximate analytical analysis (here ?_F${?}_F$ is the Fermi energy of the 2D electron system ?ω_c$\mathit{?}{\omega }_c$ is the cyclotron frequency). In the second case the proposed formalism is extended to high magnetic fields satisfying the inequality ?_F≤?ω_c${?}_F\le \mathit{?}{\omega }_c$. Calculated results are compared with available experimental data.     

Sixteen-state magnetic memory based on the extraordinary Hall effect

We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.     

Large planar Hall effect in perpendicularly magnetized W/CoFeB/MgO structures

The planar Hall effect (PHE) in W/CoFeB/MgO structure with perpendicular magnetic anisotropy was investigated as a function of CoFeB thickness (t_CoFeB). The PHE is measured by sweeping the in-plane magnetic field at various azimuthal angles as well as by rotating strong magnetic field which is enough to saturate the magnetization. We observed a huge PHE in the W/CoFeB/MgO sample, which is even larger than anomalous Hall effect (AHE). This is distinct from the results in Ta/CoFeB/MgO samples showing a much smaller PHE than AHE. Since the PHE is insensitive to the t_CoFeB while the AHE is proportional to the t_CoFeB, the unprecedented PHE can be attributed to the W layer with a large spin-orbit coupling.     

Spin Hall effect induced by a gravitational field

The experiment by Collela et al. (1975) [1] evidenced in a striking manner how the gravitational field appears in quantum mechanics. Within the modern framework of gauge theories, one can ascribe such effect as due to gauge fields originated from fundamental symmetries of spacetime: local transformations of the Lorentz-Poincaré group. When this gauge principle is applied to the Dirac equation, we obtain kinematical correlations between the gravitational field and the spin of the particles. The phenomenon is similar to the spin Hall effect found in condensed matter systems, although much smaller in magnitude. Actual measurements may require highly precision interferometric techniques with spin-polarized neutrons.     

原子霍尔效应中复合粒子和场描述

研究了原子霍尔效应中复合粒子描述方法，并进一步给出Chern－Simon－Gross－Pitaevskii(CSGP)有效场描述。研究结果表明从平均场和复合粒子的角度来看原子霍尔效应和电子霍尔效应是一致的。     

Electric field tunable photonic Hall effect with liquid crystals

The Mie theory for electromagnetic scattering is extended to the case of coated metal sphere with liquid crystals. A new set of vector basis functions for the electric displacement vector inside the liquid crystal layer has been constructed. The expansion coefficients of transmitted and scattered fields are obtained analytically by applying the continuous boundary conditions. The dependence of the scattering property on the geometrical parameters has been investigated in detail. The appearance of photonic Hall effect for such a Mie scatterer is confirmed. It is interesting that such a photonic Hall effect not only depends on the ratio of the inner to outer radius of coated sphere, it is also tunable by the application of an external voltage.     

Interfacial spin Hall current in a Josephson junction with Rashba spin—orbit coupling

We theoretically investigate the spin transport properties of the Cooper pairs in a conventional Josephson junction with Rashba spin-orbit coupling considered in one of the superconducting leads.It is found that an angle-resolved spin supercurrent flows through the junction and a nonzero interfacial spin Hall current driven by the superconducting phase difference also appears at the interface.The physical origin of this is that the Rashba spin-orbit coupling can induce a triplet order parameter in the s-wave superconductor.The interfacial spin Hall current dependences on the system parameters are also discussed.     

Spin Hall effect and spin current generation in two-dimensional systems with random Rashba spin–orbit coupling

We consider a new effect induced by spin–orbit coupling in a two-dimensional electron gas confined in a semiconductor quantum well, i.e. the possibility of spin current generation by fluctuating random Rashba spin–orbit interaction, with the corresponding mean value of the interaction being equal to zero. Our main results suggest that – in contrast to the spatially uniform Rashba spin–orbit interaction – the spin Hall effect does not vanish for typical disorder strengths. We also point out some other possibilities of using such a random Rashba coupling for the generation of spin density and spin current in two-dimensional nonmagnetic structures.     

Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels

Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS₂), the dc Hall effect measurements have practical difficulties. Here, we report the results of the Hall effect measurements using ac magnetic fields and a lock-in detection of the Hall voltage for field effect transistors with ultrathin MoS₂ channels. The ac Hall effect measurements have some advantages over the dc measurements. The carrier concentration and the Hall mobility were estimated as a function of gate voltage from the results of the ac Hall effect measurements. They used a magnetic field strength that was lower by two orders of magnitude than those used in prior studies on MoS₂ devices, which relied on dc magnetic fields.