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MgB2作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB2超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB2材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB2拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB2变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB2薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB2多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10~293 K之间的拉曼光谱进行了测试,测量的波数范围为20~1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB2的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB2的双能隙特性。考虑到MgB2中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。 相似文献
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β型烧绿石结构氧化物超导体$lt;i$gt;A$lt;/i$gt;Os$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;6$lt;/sub$gt;($lt;i$gt;A$lt;/i$gt;=K,Rb,Cs)电子能带结构的第一性原理计算 下载免费PDF全文
用全势线性缀加平面波方法计算β型烧绿石结构氧化物超导体AOs2O6 (A=K,Rb,Cs)的电子能带结构及态密度.计算发现电子自旋轨道耦合和在位库仑势U的作用增大了费米面处态密度值.通过计算还得到这三种化合物电子关联常数λc分别为1.55,1.12和0.73.由实验测量与能带计算得到的电子比热容系数的比值得到电子质量提高参数.通过分析这三种化合物电子质量提高参数,推算出它们的电声子耦合常数λep分别为1.56,0.78和1.08.由此提出KOs2O6为强电子关联和强电声子耦合系统,而RbOs2O6和CsOs2O6的电子关联性与电声子耦合为中等.
关键词:
β型烧绿石超导体
能带结构
电子关联
电声子耦合 相似文献
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报道了两种新型超导体MgB2,MgCNi3和氧化物高温超导体Bi2< /sub>Sr2Ca0.9Ce0.1Cu2O8+y 的热导率-温度关系和电阻率-温度关系.实验发现氧化物高温超导 体在进入超导态后热导有所上升,出现极大值后再下降,而MgB2和MgCNi3 则单调下降. 由Wiedemann-Fra
关键词:
热导率
超导体
2')" href="#">MgB2
3')" href="#">MgCNi3 相似文献
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测量了MgB2的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T2依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度Tc(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能EF、能带宽度
关键词:
新型超导体
热电势
电阻率 相似文献
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基于第一原理的密度泛函理论, 以量子化学从头计算软件 为平台研究了Sn(O1-xNx)2材料的光电磁性能, 分析了体系的态密度、 能带结构、 磁性、 介电虚部及折射率. 计算结果表明, N替代O后, 随着掺杂浓度的增加, 体系的带隙先减小后增大, 掺杂量为12.50%时带隙最窄. 由于N 2p轨道电子的贡献, 在0.55-1.05 eV范围内产生了浅受主能级, 价带和导带处的能级均出现了劈裂及轨道的重叠现象, Sn-O键的键强大于N-O键的键强. 从磁性来看, N原子决定了磁矩的大小. 从介电虚部可知, 掺杂后体系的光学吸收边增宽, 主跃迁峰发生红移, 反射率和介电谱相对应, 各峰值与电子的跃迁吸收有关. 相似文献
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Xiao-Ping WeiJian-Bo Deng Ge-Yong MaoShi-Bin Chu Xian-Ru Hu 《Physica B: Condensed Matter》2011,406(24):4678-4681
We investigated the electronic properties of CeSi5 by band structure calculation based on the density functional theory within LDA, LDA+U, and fully relativistic schemes. The calculated band structure scheme shows that the spin-orbit coupling splits the Ce 4f states into three manifolds. When the on-site Coulomb potential is added to the Ce-derived 4f orbitals, the degeneracy between the f orbitals would be lifted and they are split into lower Hubbard bands and upper Hubbard bands. It was found that quasiparticle mass enhancement inferred by comparing γ to the density of states (DOS) at the Fermi level indicates the effective mass of CeSi5 is enhanced with the fully relativistic results. 相似文献
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The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO4 are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO4. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO4. The real and imaginary parts of the dielectric function of SbTaO4 are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data. 相似文献
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Prabhakar P. Singh 《Solid State Communications》2003,125(6):323-326
We present a comparison of electron-phonon interaction in NbB2 and MgB2, calculated using full-potential, density-functional-based methods in P6/mmm crystal structure. Our results, described in terms of (i) electronic structure, (ii) phonon density of states F(ω), (iii) Eliashberg function α2F(ω), and (iv) the solutions of the isotropic Eliashberg gap equation, clearly show significant differences in the electron-phonon interaction in NbB2 and MgB2. We find that the average electron-phonon coupling constant λ is equal to 0.59 for MgB2 and 0.43 for NbB2, leading to superconducting transition temperatures Tc at around 22 K for MgB2 and 3 K for NbB2. 相似文献
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The noble metal diboride AuB2, a potential candidate for superconductor, is studied by an ab initio method in comparison to the superconducting MgB2. The results, described in terms of equilibrium lattice constants, bulk modulus, pressure derivative of bulk modulus and their in- and out-of-plane linear values, volume coefficient of Tc, density of states, band structure, show some similarity as well as dissimilarity between the behaviour of the two compounds. The implications for the behaviour are discussed. 相似文献
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T YokoyaA Chainani T KissK Hirata Y TakanoK Togano H KitoH Ihara S Shin 《Journal of Physics and Chemistry of Solids》2002,63(12):2141-2144
We study the superconducting electronic structures of Nb3Al and MgB2 using high-resolution spectroscopy. The obtained spectrum of Nb3Al measured below Tc shows clear opening of the superconducting gap with a sharp pile up in the density of states and a shift of the leading edge. In addition, the spectrum shows a peak-dip-hump line shape expected from the strong-coupling theory. On the other hand, for MgB2, the superconducting-state spectrum measured at 5.4 K shows a coherent peak with a shoulder structure, in sharp contrast to that expected from a single isotropic gap. The superconducting spectral shape of MgB2 can be explained in terms of a multicomponent gap. 相似文献
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利用电泳技术在高熔点金属基底Ta,Mo和W上制备MgB2超导厚膜.厚膜中的MgB2晶粒结合紧密,粒度小于1μm,呈随机取向生长.电阻测量表明沉积在Ta,Mo,W上的MgB2厚膜的超导起始转变温度分别为36.5K,34.8K,33.4K,对应的转变宽度为0.3K,1.5K和2.0K.三种基底上制备的MgB2厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同,MgB2/Mo厚膜的临界电流密
关键词:
2超导厚膜')" href="#">MgB2超导厚膜
电泳
金属基底 相似文献
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Chao Zhang Yongzhong Jia Yan Jing Ying Yao Jun Ma Jinhe Sun 《Physica B: Condensed Matter》2012,407(24):4649-4654
The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO3 have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO3. When N and S atoms were introduced into SrTiO3 lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO3 by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO3. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO3. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results. 相似文献
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Zhenhai Liang Yongbo DingJinqian Jia Caimei FanPeide Han 《Physica B: Condensed Matter》2011,406(11):2266-2269
A theoretical study on Sb-doped SnO2 has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA) level. Stability and conductivity analyses were performed based on the formation energy and electronic structures. The results show that Sn0.5Sb0.5O2 solid solution is stable because the formation energy of Sn0.5Sb0.5O2 is −0.06 eV. The calculated energy band structure and density of states showed that the band gap of SnO2 narrowed due to the presence of the Sb impurity energy levels in the bottom of the conduction band, namely there is Sb 5s distribution of electronic states from the Fermi level to the bottom of conduction band after the doping of antimony. The studies provide a theoretical basis to the development and application of Sn1−xSbxO2 solid solution electrode. 相似文献
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采用基于第一性原理密度泛函理论的平面波赝势方法,对0.5NdAlO3-0.5CaTiO3晶体进行结构优化,并对其能带结构,态密度和光学性质进行了理论计算.结构优化后晶格参数与实验数据相符合,误差小于1%;能带计算结果表明0.5NdAlO3-0.5CaTiO3为间接带隙,带隙值为0.52eV;费米面附近的能带由Nd-4f,O-2p,Nd-4p,Al-3p,Ti-4d层的电子态密度确定.同时也计算了该结构的介电函数,反射率和复折射率等光学性质. 相似文献