N2分压对ZrN/WN纳米多层膜缺陷性质与力学性能的影响

利用射频磁控溅射系统在不同N₂分压的条件下,制备了一系列ZrN/WN纳米多层膜.借助慢正电子湮没技术分析了样品的缺陷性质,采用纳米压痕仪研究了多层膜的力学性能.结果发现：N₂分压为0.4Pa的多层膜具有最小的空位型缺陷浓度,其中心层和膜基结合层的平均S参数分别为0.4402和0.4641,而较低或较高的N₂分压都可能导致空位型缺陷浓度的增加.随着空位型缺陷浓度的减小,多层膜的硬度和临界载荷增大.对于空位型缺陷浓度最小的多层膜,其硬度和临界载荷达到最大值,分别为34.8GPa和100mN,说明较低的缺陷浓度有利于提高多层膜的力学性能.关键词：ZrN/WN纳米多层膜缺陷性质力学性能慢正电子湮没     

界面对ZrN/TaN纳米多层膜固氦性能的影响

采用射频磁控溅射方法, 在混合气氛下制备了ZrN/TaN多层膜. 利用X射线衍射、慢正电子束分析、增强质子背散射、扫描电子显微镜, 分别对ZrN/TaN多层膜中相结构、氦相关缺陷、氦含量、截面形貌等进行了分析. 结果表明, 调制周期为30 nm的ZrN/TaN多层膜在600℃退火后, 氦的保持率仍能达到45.6%. 在适当的调制周期下, ZrN/TaN多层膜能够耐氦损伤并且其界面具有一定的固氦性能.关键词：ZrN/TaN纳米多层膜界面固氦     

反应磁控溅射ZrN/AlON纳米多层膜的晶体生长和超硬效应

采用Zr靶和Al₂O₃靶通过在Ar,N₂混合气氛中进行反应磁控溅射的方法制备了不同AlON调制层厚和不同ZrN调制层厚的两个系列的ZrN/AlON纳米多层膜.利用X射线能量色散谱仪、X射线衍射仪、高分辨透射电子显微镜和微力学探针研究了多层膜的成分、微结构和力学性能.结果表明,在Ar,N₂混合气氛中对Al₂O₃进行溅射的过程中,N原子会部分取代Al₂O₃中的氧原子,形成AlON化合物.在ZrN/AlON纳米多层膜中,由于受到ZrN晶体调制层的模板作用,溅射条件下以非晶态存在的AlON层在其厚度小于0.9nm时被强制晶化并与ZrN层形成共格外延生长;相应地,多层膜的硬度明显提高,最高硬度达到33.0GPa.进一步增加多层膜中AlON调制层的厚度,AlON层形成非晶结构,破坏了多层膜的共格外延生长,导致其硬度逐步降低. 关键词：ZrN/AlON纳米多层膜外延生长非晶晶化力学性能     

用正电子湮没技术研究a-Si:H/a-SiNx:H多层膜中的界面缺陷

本文报道应用正电子湮没技术(PAT)对a-Si:H/a-SiN_x:H(x≈0.5)多层膜系列样品所进行的研究。发现,由于a-Si:H和a-SiN_x:H在结构方面的失配,导致在a-Si:H/a-SiN_x:H多层膜中的界面区,产生大量缺陷。在a-Si:H子层中,紧靠界面的是应变层,厚度约为8?;在应变层之后是过渡层,厚度约为50?。在过渡层中存在大量缺陷,这就是所谓界面缺陷。关键词：     

界面和择优取向对TiN/ZrN纳米多层膜硬度变化的影响

利用射频反应磁控溅射方法,制备了调制比约为4,调制周期不同的一系列TiN/ZrN纳米多层膜. 利用X射线衍射仪(XRD)、高分辨电子显微镜(HRTEM)和纳米压痕仪(Nanoindentation)对多层膜的调制结构、界面状态和力学性能进行了表征. 研究结果表明TiN/ZrN多层膜具有很好的调制结构,但是在TiN层和ZrN层之间存在一定厚度的界面混合层. 力学性能分析表明：当调制周期小于15 nm时,TiN/ZrN多层膜的硬度介于单一TiN和ZrN薄膜的硬度之间;当调制周期为15.24 nm时,硬度达到最大,但随着调制周期增加,多层膜的硬度基本上保持为常数. 分析了TiN/ZrN多层膜硬度变化的机制,认为界面厚度和择优取向是导致硬度变化的主要原因. 关键词：TiN/ZrN多层膜界面宽度择优取向硬度变化     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si3N4层在ZrN/Si3N4纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响.一系列不同Si3N4层厚度的ZrN/Si3N4纳米多层膜通过反应磁控溅射法制备.利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.结果表明,由于受到ZrN调制层晶体结构的模板作用,溅射条件下以非晶态存在的Si3N4层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体,ZrN/Si3N4纳米多层膜形成共格外延生长的柱状晶,并相应地产生硬度升高的超硬效应.Si3N4随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.     

TiN/TiB2异结构纳米多层膜的共格生长与力学性能

采用多靶磁控溅射法制备了一系列具有不同TiB2调制层厚度的TiN/TiB2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明,在fcc-TiN层(111)生长面的模板作用下,原为非晶态的TiB2层在厚度小于2.9nm时形成hcp晶体态,并与fcc-TiN形成共格外延生长;其界面共格关系为{111}TiN∥{0001}TiB2,〈110〉TiN∥〈1120〉TiB.由于共格界面存在晶格失配度,多层膜中形成拉、压交变的应力场,导致多层膜产生硬度和弹性模量升高的超硬效应,最高硬度和弹性模量分别达到46.9GPa和465GPa.继续增加TiB2层的厚度,TiB2形成非晶态并破坏了与TiN层的共格外延生长,多层膜形成非晶TiN层和非晶TiB2层交替的调制结构,其硬度和弹性模量相应降低.     

TiN/TiB2异结构纳米多层膜的共格生长与力学性能

采用多靶磁控溅射法制备了一系列具有不同TiB₂调制层厚度的TiN/TiB_{2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明,在fcc-TiN层(111)生长面的模板 作用下,原为非晶态的TiB2层在厚度小于2.9nm时形成hcp晶体态,并与fcc-TiN 形成共格外延生长;其界面共格关系为{111}TiN//{0001}TiB2,〈110〉TiN//〈1120〉TiB2.由于共格界面存在晶格失配 度,多层膜中形成拉、压交变的应力场,导致多层膜产生硬度和弹性模量升高的超硬效应, 最高硬度和弹性模量分别达到46.9GPa和465GPa.继续增加TiB2层的厚度,TiB2形成非晶态并破坏了与TiN层的共格外延生长,多层膜形成非晶TiN层和非晶TiB< sub>2层交替的调制结构,其硬度和弹性模量相应降低.关键词：2}纳米多层膜')\" href=\"#\">TiN/TiB₂纳米多层膜共格生长晶体化力学性能     

抗辐照纳米多层膜研究进展

大量研究表明,晶界和界面可以作为吸收缺陷(如空位、间隙原子) 的“陷阱”,因此含有大量晶界、界面的纳米晶、金属和氮化物纳米多层膜,具备良好的自愈合抗辐照能力,从而成为近年来的研究热点。综述了抗辐照纳米多层膜的研究进展,内容包括:材料的设计与制备,各种辐照模拟手段(如中子辐照、离子辐照和多束离子辐照)。重点介绍了离子束辐照模拟反应堆辐照,多层膜在离子束辐照下的行为(如微观结构和机械性能的演变) 及纳米多层膜抗辐照机理。通过对CrN/AlTiN 多层膜的离子辐照,验证了纳米多层膜中界面对缺陷的吸收作用。对纳米多层膜未来研究方向做了展望。Numerous studies show that interface can serve as effective sinks for radiation-induced defects such as interstitials and vacancies. Owning a large number of interfaces, multilayer nanofilms attract a great research interest. In this paper, we review recent research progress on the development of the multilayer nanofilms for the purpose of radiation tolerance. The paper includes following parts: how to design and prepare multilayer nanofilms materials; evaluation with radiation simulation, such as neutron irradiation, ion irradiation and multi-beam ion irradiation; behaviors of multilayer nanofilms under ion beam irradiation, such as microstructure evolution and changes in mechanical properties; theoretical study on the mechanism of radiation tolerance of multilayer nanofilms. Finally, the challenge and future research directions are briefly discussed.     

AIN/Si3N4 纳米多层膜的外延生长与力学性能

采用射频磁控溅射方法制备单层AlN,Si3N4薄膜和不同调制周期的AlN/S3N4纳米多层膜.采用X射线衍射仪、高分辨透射电子显微镜和纳米压痕仪对薄膜进行表征.结果发现,多层膜中Si3N4层的晶体结构和多层膜的硬度依赖于Si3N4层的厚度.当AlN层厚度为4.0 nm、Si3N4层厚度为0.4nm时,AlN和Si3N4层共格外延生长,多层膜形成穿过若干个调制周期的柱状晶结构,产生硬度升高的超硬效应.随着Si3N4层厚的增加,Si3N4层逐步形成非晶并阻断了多层膜的共格外延生长,多层膜的硬度迅速降低,超硬效应消失.采用材料热力学和弹性力学计算了Si3N4层由晶态向非晶转变的临界厚度.探讨了AlN/Si3N4纳米多层膜出现超硬效应的机理.     

Microstructures and tribological properties of CrN/ZrN nanoscale multilayer coatings

Nanoscale multilayer CrN/ZrN coatings with bilayer thicknesses ranging from 11.7 to 66.7 nm were prepared by reactive magnetron sputtering techniques. The structure of the thin films was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). X-ray diffraction results showed that CrN individual layers presented a <1 1 1> preferred orientation in the multilayer coatings. The diffraction peaks of CrN shifted continuously to low diffraction angle with decreasing bilayer thickness. TEM observations showed that the multilayer did not form a superlattice structure instead of the coexistence of nanocrystalline CrN and ZrN layers. Columnar growth for all the coatings was observed by cross-sectional SEM. Nanoindentation tests showed that the multilayer coatings had almost a constant nanohardness of 29 GPa in spite of the variations of bilayer thickness. Pin-on-disk tests indicated that both the friction coefficients and wear rates increased when decreasing bilayer thickness. However, in comparison with the monolayer coating, the multilayer coatings exhibited excellent wear resistance.     

Structure and mechanical properties of titanium nitride/carbon nitride multilayers

The structure and mechanical properties of the multilayers consisting of 5-73 nm thick titanium nitride (TiN) and 4.6 nm thick carbon nitride (CN) have been investigated. It has been found that the CN layers are amorphous and the TiN layers thinner than 17 nm are amorphous. The TiN layers become crystallized as the thickness is increased to 30 nm or thicker. The hardness from the composite response of the multilayered films and their substrates determined using continuous stiff measurement is smaller than the film-only hardness (without substrate effects) calculated using Bhattacharya-Nix empirical equation. The hardness increases with raising the thickness of TiN layers. With the crystallization of the TiN layer, the multilayers become even harder than that calculated based on the rule of mixtures. However, no enhancement in hardness has been observed when the TiN layers are amorphous.     

On the structure and composition of nanoscale TiAlN/VN multilayers

The chemical and physical structure of a TiAlN/VN multilayer, of average layer thickness 3.4?±?0.4?nm, was characterized using a spherical aberration-corrected STEM, utilizing a nominal 0.1-nm beam, by HAADF and EELS. The interface between layers was shown to be rough, with local thickness variations evident in layer thickness. Chemical mixing between layers was identified, consistent with numerical modelling of the deposition flux and layer growth. The implications of the compositional modulation are discussed.     

Characteristics of ZrC/ZrN and ZrC/TiN multilayers grown by pulsed laser deposition

ZrC/ZrN and ZrC/TiN multilayers were grown on (1 0 0) Si substrates at 300 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser. X-ray diffraction investigations showed that films were crystalline, the strain and grain size depending on the nature and pressure of the gas used during deposition. The elemental composition, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed that films contained a low level of oxygen contamination. Simulations of the X-ray reflectivity (XRR) curves acquired from films indicated a smooth surface morphology, with roughness below 1 nm (rms) and densities very close to bulk values.Nanoindentation results showed that the ZrC/ZrN and ZrC/TiN multilayer samples exhibited hardness values between 30 and 33 GPa, slightly higher than the values of 28-30 GPa measured for pure ZrC, TiN and ZrN films.     

Nanoindentation and nanoscratch behaviors of Ag/Ni multilayers

The hardness, elastic modulus and scratch behaviors of Ag/Ni mulitlayers deposited by evaporation have been carried out by nanoindentation and nanoscratch. It has been found that the hardness (H) increases, while the modulus (E) decreases, that is to say an increase of H/E as the periodicity decreases. Many mechanisms are included in nanoscratch, including initial elastic contact, plowing and fracture stage, in each multilayer. Coefficient of friction during plowing decreases with the decrease of the periodicity, which can be ascribed to decreasing material pile-up due to the increase of H/E. Elastic recovery after scratching also increases as the periodicity decreases because of the increase of H/E, which leads to improved wear resistance. The fracture stage will be postponed with decreasing periodicity, which also leads to better wear behavior.     

Effect of high pressure on the electron-phonon interaction and superconductivity in ZrN and HfN

Ab initio calculations of the superconducting properties have been performed for zirconium and hafnium nitrides at normal and high pressures. The results for ZrN are in good agreement with the existing data of the tunnel experiments and measurements of the pressure derivative of the critical temperature T _c. It has been shown that the decrease in T _c under compression occurs due primarily to an increase in the phonon frequencies.     

Composition and magnetic properties of Fe/Fe x N thin film multilayers

The structure, composition, and magnetic characteristics of thin films multilayers of iron-iron nitride with high magnetic moment and very low coercive field are investigated. The present study together with previous ones that described in detail the magnetic properties lead to the establishment of certain requirements to obtain iron-iron nitride multilayers with outstanding magnetic characteristics.Supported in part by Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq, Brazil)     

Effect of pressure and mechanical stress on the electronic properties of AlN and GaN

The fundamental properties of the AlN and GaN compounds with a wurtzite structure under external hydrostatic pressure, uniaxial mechanical stress σ_⊥ along the hexagonal axis, and biaxial mechanical stress σ_⊥ in the basal plane of the unit cell have been considered in terms of first-principles calculations in the frame-work of the density functional theory. The pressures of the phase transitions from the structures of wurtzite and zinc blende to the structure of rock salt have been obtained. The behavior of the structural parameters, interband transitions, and positions of the charge neutrality level has been investigated. The calculated pressure coefficients of the band gap are as follows: ∂E _g /∂p = 40.9 meV/GPa, −∂E _g /∂σ _| = −4.2 meV/GPa, and −∂E _g /∂σ _⊥ = 45.2 meV/GPa for AlN and ∂E _g /∂p = 33.0 meV/GPa, −∂E _g /∂σ _| = 23.6 meV/GPa, and −∂E _g /∂σ _⊥ = 9.6 meV/GPa for GaN. The pressure coefficients of the charge neutrality level in almost all cases are substantially smaller than the corresponding values obtained for the band gap E _g .     

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti-Cx-Ny thin films

Ti-C_x-N_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into TiC_1.02 using unbalanced reactive unbalanced dc magnetron sputtering method. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and microindentation methods were used to investigate their phase configurations, nanostructures and mechanical behaviors in order to investigate their dependences on nitrogen content. The result indicated that the nitrogen content had a significant effect on phase configuration, nanostructure and mechanical behaviors of Ti-C_x-N_y thin films. The nitrogen-free TiC_1.02 films exhibited a polycrystallite with nano-grains. On one hand, incorporated nitrogen substituted C in TiC_1.02, producing Ti(C,N), and subsequently linked to the substituted C, forming C-N. On the other hand, the substituted C lined to each other, forming C-C. As a result, nanocomposite thin films consisting of nanocrystalline Ti(C,N) and amorphous (C, C-N) were produced. With further incorporation of nitrogen more C was substituted, accompanying with formation of more amorphous matrices and decrease of size of nanocrystalline Ti(C,N). The trend was enhanced with further increase of nitrogen content. A microhardness maximum of ∼58 GPa was obtained in nitrogen-free TiC_1.02 thin films. This value was linearly decreased with incorporation of N or increase of N content, and finally a hardness value of about 28 GPa was followed at a N content of ∼25 at.%. Both elastic modulus and residual compressive stress values exhibited similar trends.