Synthesis, structure, and photoluminescence of Zn2SnO4 single-crystal nanobelts and nanorings

A large quantity of single-crystal Zn₂SnO₄ (ZTO) nanobelts is synthesized by using a thermal evaporation method. The lengths of the nanobelts are up to several hundreds of micrometers, and the average width and thickness are about 400 and 30 nm, respectively. Some ring-like nanobelts, called nanorings here, are also observed. The nanobelts are characterized in detail with scanning electron microscope, X-ray powder diffraction, transmission electron microscope, high-resolution transmission electron microscope and selected area electron diffraction. Possible growth mechanisms for the ZTO nanobelts and nanorings are proposed. In addition, the photoluminescence spectrum (PL) of the nanobelts at room temperature shows a stable broad blue-green emission around the 400-600 nm wavelengths with a maximum center at 490 nm. The strong PL emission of the nanobelts may find potential applications in nano-scale optoelectronic devices.     

Environmentally superior cleaning of diatom frustules using sono-Fenton process: Facile fabrication of nanoporous silica with homogeneous morphology and controlled size

Existing techniques for the preparation of silica structures from diatom cells include cleaning of frustules through baking at high temperature and oxidant cleaning using concentrated sulfuric acid, hydrogen peroxide, nitric acid, or sodium dodecyl sulfate (SDS)/ethylenediaminetetraacetic acid (EDTA). In this study, sono-Fenton (SF) process was examined to prepare nanoporous silica through cleaning diatom frustules, while preserving their structural features. Single colonies of Cyclotella sp. were cultivated in batch mode f/2-enriched seawater. Combination of Fenton process with ultrasonication was found to be more efficient than the sum of individual processes in the removal of organic compounds from Cyclotella sp. structure. The optimized amounts of operational parameters were determined as suspension pH of 3, diatom cell density of 4.8 × 10⁵ cell mL⁻¹, H₂O₂ concentration of 60 mM, Fe²⁺ concentration of 15 mM, ultrasound irradiation power of 400 W and the temperature of 45 °C. The results of energy-dispersive X-ray spectroscopy (EDX) and thermal gravimetry (TG) analyses proved that organic materials covering the cell wall were significantly removed from the frustules through SF process. Scanning electron microscopy (SEM) images showed that after SF treatment, silica nanostructures were produced having uniform pores less than 15 nm in diameter. N₂ adsorption–desorption isotherms demonstrated that almost non-porous structure of diatom frustules became mesoporous during removing the organic matrix. Lipids, amino acids, carbohydrates and organic acids or their oxidized products were identified using GC–MS analysis as the main organic compounds released from diatom cells to the solution after SF treatment. Treated frustules exhibited adsorption capability of 91.2 mg/g for Methylene Blue, which was almost 2.5 times higher than that of untreated frustules (34.8 mg/g).     

Correlation between surface oxide and photoluminescence properties of Si nanoparticles prepared by pulsed laser ablation

Hydrogenated silicon nanoparticles were prepared by pulsed laser ablation (PLA) of Si target in hydrogen gas. We observed native oxidation process for 250 days by infrared (IR) absorption measurement and investigated correlation between native oxidation and photoluminescence (PL) properties. We found three PL peak regions, around 800 nm, 600–700 nm and 400–500 nm. These PL peak wavelengths depended on the Si-O bond density and remarkable correlation with composition of the oxide layer was not observed. The native oxidation is a passive method to modify the surface. We propose plasma surface treatment as an active method. The PL wavelength varied by the surface treatments due to suppression of native oxidation. The surface modification is an important technique to control PL peak wavelength of silicon nanoparticles. PACS 81.15.Fg; 81.07.Bc; 78.67.-n     

Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal.In experiments,semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated.The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements.The modification of the spontaneous emission rate,which is reflected in the change of spectral shape and PL lifetime,is clearly observed.While an obvious increase in the PL lifetime is found at most wavelengths in the band gap,a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge.Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal.It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously.This finding provides a simple and effective way for improving the performance of light emitting devices.     

Optical properties of Cu nanocomposite glass obtained via CuO and SnO co-doping

Prospective applications of plasmonic nanocomposites in photonic and optoelectronic devices demand innovative means of material syntheses, as well as a comprehensive understanding of the influence of material composition and processing on resulting properties. In this work, it is shown that a phosphate glass matrix prepared with stoichiometric amounts of CuO and SnO dopants by the melting technique may well be effective for the precipitation of Cu nanoparticles (NPs) upon heat treatment (HT). Optical absorption and photoluminescence (PL) spectroscopy, including emission decay dynamics, are employed in the characterization of the melt-quenched glass, and for investigating the influence of HT on material optical properties. The as-prepared material appeared highly luminescent; the data suggests contributions from both twofold-coordinated tin centers and Cu⁺ ions to light emission. The PL depends strongly on excitation wavelength; e.g. excitation at 260 nm shows a blue–white emission for which a significant contribution from tin is indicated, whereas excitation at 360 nm produces an orange emission in association with Cu⁺ ions. Thermal processing results in the chemical reduction of ionic copper via Sn²⁺ ultimately producing Cu NPs in the matrix, as evidenced by the appearance of the surface plasmon resonance around 574 nm. As a result, Cu⁺ PL decreases and the emission band shows a dip due to reabsorption by Cu NPs in resonance.     

二氧化硅胶体球自组装光子晶体的研究

光子晶体由于具有光子带隙和光子局域等一系列优异的光学特性而受到了人们广泛的关注。由于采用胶体颗粒自组装法制备光子晶体制备工艺简单,所需要的费用也较低,因此已成为制备可见光至红外波段三维光子晶体的一种简便有效的方法。采用垂直沉积法制得了三维光子晶体薄膜,并用扫描电子显微镜和紫外-可见光-近红外分光光度计对其显微结构和光学特性进行了详细的研究。结果表明,自组装薄膜在三维方向上都具有有序结构,其密排面平行于载波片的表面。制备的光子晶体薄膜具有明显的光子带隙特性,带隙中心波长为956nm。研究了带隙中心波长同入射线与密排面法线夹角之间的变化关系,其结果与理论值吻合得很好。     

Green Emitting Cerium Doped CaS Whiskers Grown by Solid State Diffusion Method

Undoped and cerium doped Calcium sulfide (CaS) phosphors were synthesized using solid state diffusion method. The X-ray diffraction pattern revealed that both undoped and doped CaS crystallites have cubic structure with average crystallite size varying from 20 to 30 nm. Scanning electron micrographs indicated that Ce doped CaS phosphors were composed of whiskers with different dimensions and orientations. The optical properties of undoped and Ce doped particles were characterized using Photoluminescence (PL) and UV-Vis absorption spectroscopy. The PL emission spectrum of cerium doped CaS phosphors for an excitation wavelength 465 nm showed a main peak at 500 nm and a shoulder peak at 556 nm due to 5d?→?4f transition in Ce³⁺ ions. The variation of PL intensity with cerium concentration was investigated and the maximum PL intensity was obtained for a doping concentration of 3 wt.%. The optical band gap of the samples was estimated from the diffuse reflectance spectrum and was found to increase with increase in cerium concentration. The enhanced optical properties of these phosphors can be exploited in various optoelectronic devices including displays and bioimaging techniques.     

Effects of natural oxidation on the photoluminescence properties of Si nanocrystals prepared by pulsed laser ablation

In this work, Si nanocrystals (Si-NCs) have been prepared by pulsed laser ablation technique in dichloromethane, and the microstructure and photoluminescence (PL) properties of the Si-NCs before and after natural oxidation were investigated. Transmission electron microscopy and Raman results show that the average diameter of the Si-NCs is 2.42 nm in the dichloromethane solution. Blue–violet PL with a lifetime of 4.6 ns is observed at room temperature, and the PL peak shifts toward longer wavelength with the red shift of excitation wavelength. The PL excitation spectrum indicates that the bandgap of the Si-NCs in solution is 2.64 eV, which confirms that the blue–violet PL originates from interband transition of Si-NCs caused by quantum confinement effect. The PL peak red shifts to 607 nm after natural oxidation, and the peak lifetime of which is slow down to 13.1 μs. The fixed PL peak excited by different wavelengths and the slow PL decay time indicate that interface defects become the main PL mechanism after natural oxidation. The results will add new information for understanding the PL mechanism of Si-NCs in different environments.     

氧化锌量子点和碳量子点及其复合物的制备与发光性能的研究

采用溶胶凝胶方法和水热法制备了水溶性荧光氧化锌量子点(Zn O-QDs)和碳量子点(C-QDs),其量子效率分别达到38%和61%。基于所合成的Zn O-QDs和C-QDs制备了氧化锌和碳量子点复合物(Zn O/CQDs),并分别对其发光特性进行了研究。透射电镜(TEM)图像表明,所合成的Zn O-QDs和碳量子点尺寸分布在3~6 nm之间,分散均匀。光致发光光谱表明,Zn O-QDs和碳量子点的发光峰中心分别位于540 nm和450 nm,两者发光峰的最佳激发波长为370 nm和350 nm。通过调整Zn O-QDs和C-QDs的体积比,所制备的Zn O/C-QDs能够实现荧光光谱的连续可调,并产生了白色荧光。     

Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition

Nanosecond pulses of a Nd:YAG laser have been employed to deposit thin-film zinc telluride (ZnTe) on silicon (Si) and glass without heating these substrates. We present and discuss the structural and surface properties of films deposited at 1064 nm and 532 nm. X-ray diffraction and analysis of the surface roughness with atomic force microscopy reveal that the material texture and surface morphology depend on the ablation laser line used rather than on the substrate. The observations contribute to improved understanding of pulsed-laser deposition and provide tools to optimize the optoelectronic and photonic properties of ZnTe thin-films as well as their incorporation into Si-based technologies in order to fabricate cost-effective and functional optoelectronic devices and all-optical laser digitizer.     

Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2

Hybrid organic-inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm scale usually show special properties. Here, we report on the growth of methylammonium lead iodide (MAPbI₃) ultrathin films via co-deposition of PbI₂ and CH₃NH₃I (MAI) on chemical-vapor-deposition-grown monolayer MoS₂ as well as the corresponding photoluminescence (PL) properties at different growing stages. Atomic force microscopy and scanning electron microscopy measurements reveal the MoS₂ tuned growth of MAPbI₃ in a Stranski-Krastanov mode. PL and Kelvin probe force microscopy results confirm that MAPbI₃/MoS₂ heterostructures have a type-II energy level alignment at the interface. Temperaturedependent PL measurements on layered MAPbI₃ (at the initial stage) and on MAPbI₃ crystals in averaged size of 500 nm (at the later stage) show rather different temperature dependence as well as the phase transitions from tetragonal to orthorhombic at 120 and 150 K, respectively. Our findings are useful in fabricating MAPbI₃/transition-metal dichalcogenide based innovative devices for wider optoelectronic applications.     

多色脉冲激光光源研究

采用钛宝石锁模飞秒激光器作为泵浦光源,利用1.8 μm纤芯的保偏光子晶体光纤的高非线性特性产生超连续谱,通过调节泵浦光源和光子晶体光纤之间的耦合,在可见光区,获得了中心波长分别在431 nm, 497 nm, 520 nm, 575 nm的mW量级的不同颜色的激光输出,并且测量输出的脉冲序列重复频率与泵浦光的一致,具有良好的稳定性.     

Theoretical Study of the Electronic and Optical Properties to Design Dye-Sensitivity for Using in Solar Cell Device

In this work, the structural and optoelectronic properties of phenanthrene-1,3,4-thaidiazoles oligomers were calculated using density functional theory (DFT) at B3LYP/6-31G(d) basis set level, to evaluate their possible application as organic semiconductor materials in photovoltaic and solar cell devices. For this reason, the energy gaps, frontier orbital (HOMO, and LUMO) distributions, total energies, Fermi level energies, work functions and maximum wavelength absorption, vertical absorption energies, and oscillator strengths have been investigated and discussed. The structures of phenanthrene-1,3,4-thiadiazoles oligomers are expanded from 1 to 10 thiadiazole monomeric units, to examine the increase of thiadiazole monomeric units on the optoelectronic properties. We observed that increased the number of monomeric units lead to significantly enhance the optoelectronic properties, which caused to decrease the gap energy from 3.69 eV in the structure with one thiadiazole ring just to 2.36 eV with 10 units. These changes give the shift of maximum absorption wavelengths from 376 to 578 nm. Consequently, these molecules have main absorption bands within the solar spectrum, to give the best performance for photovoltaic and organic solar cells devices.     

Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

Double crystal rocking curve (DCRC), atomic force microscopy (AFM), scanning electron microscopy (SEM), and photoluminescence (PL) measurements on GaN epilayers grown with various thicknesses (3.4, 8.5, 17, 34, and 51 nm) of the AlN buffer layer were carried out to investigate the surface, the structural, and the optical properties of the GaN epilayers. The results of the DCRC, AFM, SEM, and PL measurements showed that the GaN epilayer grown on a 3.4 nm AlN buffer layer had the best quality. These results indicate that GaN active layers grown on 3.4 nm AlN buffer layers hold promise for potential applications in optoelectronic devices.     

Design of leaky modes of two-dimensional photonic crystal slabs to enhance the luminescence from Er3N@C80 fullerenes

We develop an effective way to engineer a two-dimensional GaAs photonic crystal slab with its leaky eigenmodes at desired wavelengths by investigating its spectral dispersion, particularly in terms of transmission efficiency spectra at different launch angles of the light beam. Structural parameters for the photonic crystal slab with leaky eigenmode wavelengths at both 1492 nm and 1519 nm are obtained. This may lead to the enhanced luminescence from erbium-doped trinitride-template fullerenes (Er₃N@C₈₀) on the surface of the photonic crystal slabs.     

纳米柱高度对GaN基绿光LED光致发光谱的影响

纳米柱结构是释放高In组分InGaN/GaN绿光LED量子阱层应变的有效方法。本文采用自组装的聚苯乙烯微球掩模、感应耦合等离子体干法刻蚀和KOH溶液的湿法腐蚀,在GaN基绿光LED外延片上制备了3种高度的纳米柱结构,通过扫描电子显微镜观察纳米柱结构的形貌,并测试了常温和10 K低温时的光致发光谱(PL)。结果表明:应变释放对压电场的影响显著,使得纳米柱结构样品的内量子效率(IQE)提高,PL谱峰值波长蓝移;应变在量子阱中的不均匀分布还使得PL谱半高全宽(FWHM)展宽。与普通平面结构相比,高度为747 nm的纳米柱结构可使得IQE提升917%,PL谱峰值波长蓝移18 nm、FWHM展宽7 nm。另外,纳米柱结构样品的有源区有效面积减小可使得PL谱FWHM减小。     

MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性

研究了用金属有机物气相外延(MOVPE)法在蓝宝石衬底上生长的In组分浓度保持不变的InGaN/GaN单量子阱结构在室温下的发光特性和光吸收特性.实验结果表明,在InGaN厚度<3nm时,随着样品InGaN势阱层宽度的增加(1nm),光致发光(PL)谱的发光峰值波长出现明显的红移33nm现象,而且发光强度下降8%,谱线半峰全宽(FWHM)展宽,通过对样品的透射、反射光谱研究发现,量子阱层窄(1.5nm)的样品在波长接近红外区时出现无吸收的现象,即R+T达到了100%,而在阱层较宽的样品中没有发现这一现象,对引起这些现象的原因进行了讨论.这些结果有助于开发和优化三族氮化物半导体光电器件的进一步研究工作.     

Broad and ultra-flattened supercontinuum generation in the visible wavelengths based on the fundamental mode of photonic crystal fibre with central holes

By coupling a train of femtosecond pulses with 100 fs pulse width at a repetition rate of 76 MHz generated by a mode-locked Ti:sapphire laser into the fundamental mode of photonic crystal fibre(PCF) with central holes fabricated through extracting air from the central hole,the broad and ultra-flattened supercontinuum(SC) in the visible wavelengths is generated.When the fundamental mode experiences an anomalous dispersion regime,three phases in the SC generation process are primarily presented.The SC generation(SCG) in the wavelength range from 470 nm to 805 nm does not emerge significant ripples due to a higher pump peak power and the corresponding mode fields at different wavelengths are observed using Bragg gratings.The relative intensity fluctuations of output spectrum in the wavelength ranges of 530 nm to 640 nm and 543 nm to 590 nm are only 0.028 and 0.0071,respectively.     

多孔硅发光峰温度行为的研究

实验研究了多孔硅（Ｐｏｒｏｕｓ Ｓｉｌｉｃｏｎ）光致发光峰随测量温度的变化,发现发光峰位随温度的移动与发光峰的能量有关。随温度升高,发光峰波长较长的样品它们的发光峰都移向高能,面发光峰能量较高的样品它们的发光峰都移向低能,发光峰波长位于７４０ｎｍ附近的样品,它们的发光峰与测量温度无关。对上术结果的起源作了讨论。     

Measurement of the complex dielectric constant of a single gold nanoparticle

A differential interference contrast microscopy technique that employs a photonic crystal fiber as a white-light source is used to measure both the real and the imaginary part of the complex dielectric constant of single 10 and 15 nm gold nanoparticles over a wavelength range of 480 to 610 nm. Noticeable deviations from bulk gold measurements are observed at short wavelengths and for individual particles even after taking into account finite-size surface damping effects.