Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Etude par diffraction neutronique des solutions solides K1−xBixF1+2xetRb1−xBixF1+2x

Bragg neutron diffraction studies have been carried out on the fluorite type solid solutions K_1?xBi_xF_1+2x (0.50 ? × ? 0.70) and Rb_1?xBi_xF_1+2x (0.50 ? × ? 0.60). The distribution of the fluorine atoms between normal and interstitial sites is given as a function of substitution rate. A substition mechanism is proposed. Electrical and NMR results on one side and structural data on the other side are correlated. A study of the background as a function of temperature has allowed to determine the static origin of its modulation. By inelastic neutron diffusion, it has been shown that the number of carriers is weak, which involves a high mobility.     

含铜铁电电容器SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3/Ni-Al/Cu/Ni-Al/SiO2/Si异质结的研究

应用磁控溅射法以Ni-Al同时作为Cu与SiO₂/Si,Cu与SRO薄膜之间的阻挡层材料,将Cu与SiO₂/Si衬底和氧化物薄膜电极隔离,避免它们在高温氧气氛中发生化学反应和互扩散,实现了Cu薄膜与氧化物铁电电容器的集成.采用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了不同温度下快速退火的SrRuO₃(SRO)/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu异质结的微结构和表面形貌,结果发现SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu多层异质结薄膜在高达750 ℃仍然具有较强的Cu衍射峰和比较平整的表面,显示出了很好的高温热稳定性.研究了"室温长高温退"和"低温长高温退"两种工艺手段,发现在制备含Cu多层氧化物薄膜异质结时,低温长高温后退火的方式要优于常规的室温长高温后退火方式,通过低温长高温退工艺可以缓解应力、削弱界面粗化和避免高温生长对阻挡层和Cu薄膜结构的破坏.最后结合sol-gel法将Pb(Zr_0.4Ti_0.6)O₃(PZT)生长在该含Cu异质结上,制备得SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu铁电电容器,研究了电容器的薄膜结构、铁电性能和漏电特性等,发现制备的含Cu铁电电容器具有很好的铁电性能,如电滞回线趋势饱和,剩余极化强度高达~42 μC/cm²,矫顽电压为~1.0 V,介电常数~1600,漏电流~1.83×10^-4 A/cm²,以及良好的抗疲劳特性和保持特性等,表明导电性优良的Cu薄膜可以应用于高密度高性能铁电电容器.对其漏电机理研究表明,SRO/PZT/SRO含Cu铁电电容器满足空间电荷限制传导机理. 关键词： Cu PZT 铁电电容器 Ni-Al     

E.P.R. in GdxCeyLa1−x−yBe13 and GdxCe−xBe13 intermetallics with high electron lattice relaxation

The bottleneck effect arising in the electron paramagnetic resonance of Gd in GdBe₁₃ and Gd_xCe_-xBe₁₃ with x ? 0.001 is removed by additions of CeBe₁₃ which displays a high electron lattice relaxation rate, tentatively attributed to an interconfiguration fluctuation of the 4f electron of Ce.     

碱金属Li,Na,K,Rb,Cs,Fr的ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 和nf2F5/2,7/2 里德伯能级理论研究

本文在多通道量子数亏损理论(MQDT)框架下,利用相对论多通道理论(RMCT),分别在冻结实近似、 考虑Δl=-1的偶极极化效应、Δl=+1的偶极极化效应、Δl=± 1的偶极极化效应、伸缩模效应以及同时考虑偶极极化效应和伸缩模效应等不同层次近似下,系统地计算了碱金属Li, Na, K, Rb, Cs和Fr七个里德伯系列的能级,即ns²S_1/2, np²P_1/2, np²P_3/2, nd²D_3/2, nd²D_5/2, nf²F_5/2 和nf²F_7/2.计算结果表明,电子关联效应对碱金属原子的里德伯能级的影响很大.总的来说,偶极极化效应比伸缩模效应重要,而在偶极极化效应中, Δl = + 1的偶极极化效应比Δl = - 1的偶极极化效应重要.但对于Na的ns²S_1/2,(nd²D_3/2,nd²D_5/2)里德伯系列的能级,和Li的(np²P_1/2,np²P_3/2)里德伯系列的能级,是伸缩模效应比较重要.     

Identification of the missing rotation-aligned (νi132−2) 12+state in196Hg

The thermodynamical properties of hot asymmetric nuclear matter are shown to be quite independent of the nuclear potentials currently in use. However, there is a sizeable effect of the nuclear compressibility on the critical and maximum temperatures.     

The Ã1A1-X̃1A1 two-photon fluorescence excitation spectrum of 1,2-difluorobenzene

The two-photon fluorescence excitation spectrum of 1,2-difluorobenzene was obtained with a tunable dye laser calibrated using a combination of the neon optogalvanic spectrum and etalon fringes. The spectrum consists only of A₁-A₁ bands but the use of linear and circular polarization divides the bands into two types. The 0⁰₀ type retains its intensity in circular polarization and, rotationally, shows little or no zero-rank contribution. The 5¹₀ (or 14¹₀) type loses much of its intensity in circular polarization and, rotationally, shows a large zero-rank contribution. These observations all accord with the trace of the two-photon transition tensor being close to zero for the 0⁰₀ type and large for the 5¹₀ type, the latter type being involved in vibronic interaction which mixes the $\text{A}\text{?}$ and $\text{X}\text{?}$ states. There is strong evidence for Fermi resonance between the 5¹ and 6¹10¹ levels. Parts of the one-photon absorption spectrum have been photographed to aid sequence identification and also to look for the 5¹₀, A₁-A₁ transition. This transition is not observed: nor is there any evidence for intensity stealing by b₂ vibrations.     

The Ã1B2-X̃1A1 two-photon fluorescence excitation spectrum of 1,3-difluorobenzene

The $\text{A}\text{?}{}^1\text{B}{}_2\text{-}\text{X}\text{?}{}^1\text{A}{}_1$ system of 1,3-difluorobenzene has been observed using the technique of two-photon fluorescence excitation obtained with a pulsed dye laser. Calibration was achieved by a combination of the neon optogalvanic spectrum and etalon fringes. In circular, compared to linear, polarization the bands divide into two groups, those which are B₂-A₁ and which retain their intensity with circular polarization, and those which are A₁-A₁ and lose about 60% of their intensity under the same conditions. These two kinds of bands also show characteristic rotational contours. All of the A₁-A₁ bands whose assignments are established obtain their intensity through vibronic interaction in which the vibration ν′₂₅ (ν′₁₄ in the Wilson numbering) mixes the $\text{A}\text{?}$ with, presumably, the $\text{X}\text{?}$ state. There is an important Fermi resonance between the 9¹ and 10¹11¹ levels. Parts of the one-photon absorption spectrum have been photographed to identify sequences associated with the 0₀⁰ band for comparison with those observed in the two-photon spectrum, and to search for bands involving odd quanta of b₂ vibrations, including ν′₂₅ (ν′₁₄); none was found.     

Determining the KS→3π amplitude in pp(OR e+e−)→K0K0

The amplitude ratio 〈3π|T|K_S〉/〈3π|T|K_L〉 can be well determined in e⁺e^? (or low energy $\text{p}\text{p}\text{)→K}{}^{\mathrm{o}}\text{K}{}^{\mathrm{o}}$ from the decay time-distribution when each produced kaon→3π, other unknown parameters of the distribution being obtainable from corresponding observations involving known channels like ππ.