碳纳米管热导率的分子动力学研究

采用非平衡分子动力学方法研究了室温下(5,5)碳纳米管的热导率.当管长从6 nm增加到4 μm时,其热导率从30 W/(m.K)增加为1000 W/(m.K).当碳纳米管长度小于40 nm时,热导率与长度呈线性关系,此时导热处于弹道输运阶段.随着管长的增加,热导率和长度成幂指数关系,但幂指数逐渐减小并趋向于O,表明声子从以弹道输运为主向以扩散输运为主的机制转变.     

单壁碳纳米管晶格热导率的理论计算

基于线性波尔兹曼输运方程和碳纳米管的色散关系,本文研究了声子散射的Umklapp和Normal过程同时存在时单壁碳纳米管的晶格热导率,以及温度、管长和管径对它的影响.结果表明:N过程的影响在高温不能忽略;对(10,0)管而言,在低温下其导热率随温度升高迅速增大,在90 K附近达到最大值,然后逐渐开始下降;热导率与管长L的关系是κ∝ L1/2;在相同管长和温度下,热导率随管径的减小而增大.     

硅纳米薄膜中声子弹道扩散导热的蒙特卡罗模拟

通过建立声子散射概率函数描述声子在输运过程中的散射,提出了一种模拟声子弹道扩散导热的蒙特卡罗方法,并将其应用于硅纳米薄膜中的稳态和瞬态弹道扩散导热过程的研究. 提出的蒙特卡罗方法对边界发射的声子束进行跟踪,根据散射概率函数模拟声子束在传播区域内经历的散射过程,并通过统计声子束的分布得到温度分布. 稳态导热过程的模拟发现,尺寸效应会引起边界温度跳跃,其值随着Knudsen数的增大而增大;计算的硅纳米薄膜的热导率随着厚度的增大而增大,与文献中的实验数据和理论模型相符. 通过瞬态导热过程的模拟得到了纳米薄膜内的温度分布随时间的变化,发现瞬态导热过程中的热波现象与空间尺度相关,材料尺寸越小,弹道输运越强,薄膜中的热波现象也越显著. 关键词： 纳米薄膜 弹道扩散导热 蒙特卡罗模拟 尺寸效应     

Ga填充n型方钴矿化合物的结构及热电性能

用熔融退火结合放电等离子烧结(SPS)技术制备了具有不同Ga填充含量的Ga_xCo₄Sb₁₂方钴矿化合物,研究了不同Ga含量对其热电传输特性的影响规律. Rietveld结构解析表明,Ga占据晶体学2a空洞位置,Ga填充上限约为0.22,当Ga的名义组成x≤0.25时,样品的电导率、室温载流子浓度N_p随Ga含量的增加而增加,Seebeck系数随Ga含量的增加而减小. 室温下霍尔测试表明,每一个Ga授予框架0.9个电子,比Ga的氧化价态Ga³⁺小得多. 由于Ga离子半径相对较小,致使Ga填充方钴矿化合物的热导率κ及晶格热导率κ_L较其他元素填充的方钴矿化合物低. 当x＝0.22时对应的样品在300K时的热导率和晶格热导率分别为3.05Wm^-1·K^-1和 2.86Wm^-1·K^-1.在600K下Ga_0.22Co_4.0Sb_12.0样品晶格热导率达到最小,为1.83Wm^-1·K^-1,最大热电优值Z,在560K处达1.31×10^-3K^-1. 关键词： skutterudite化合物 Ga原子填充 结构 热电性能     

单根单壁碳纳米管导热系数随长度变化尺度效应的实验和理论

考虑纳米碳管与基体之间的热损失,采用四焊盘-3ω法测量了室温下基体表面不同长度单根单壁碳纳米管(SWNT)的导热系数.SWNT的导热系数在测试长度范围(05—7μm)内随长度的增大而增大,增加的幅度逐渐减小.考虑二阶3-声子过程的影响,采用改进的WV模型预测了SWNT导热系数随长度的变化规律.理论预测的声子平均自由程～175nm.导热系数的测量结果与室温下不同长度SWNT的实验结果相吻合.理论预测结果与实验结果均说明SWNT导热系数随长度变化具有尺度效应. 关键词： ω法')" href="#">3ω法 单壁碳纳米管 导热系数 二阶3-声子过程     

含硫宽禁带Ga2Te3基热电半导体的声电输运特性

目前对宽禁带半导体热电材料的研究开始升温, 原因是本征情况下宽禁带半导体往往具有低的热导率和高的Seebeck系数. Ga₂Te₃ 是一类带有缺陷的宽禁带半导体, 其在临界温度680± 10 K和757± 10 K处会参与共析转变和包晶反应, 因此会产生反应热. 本次工作采用少量的S元素等电子替换Ga₂Te₃中的Te元素, 观察到在临界温度附近热焓的变化, 但没有相变发生. 受热焓变化的影响这类材料在临界温度附近出现了较活跃的声电输运行为, 具体表现为热容和Seebeck系数(α)明显增大及热扩散系数(热导率)和电导率下降. 例, 对于x=0.05的材料, 其α值从596 K 时的376.3(μV·K^-1)迅速增大到695 K时的608.2(μV·K^-1), 然后又随温度升高到764 K时迅速降低到213.8(μV·K^-1). 在596 K到812 K范围, Seebeck系数和电导率几乎随温度均呈Z字形变化. 这些输运行为的变化揭示了在Ga₂Te₃基半导体中声子和载流子的临界散射特点, 这种临界散射特征对以后的继续研究具有重要的参考价值.     

单壁碳纳米管电子输运特性的稳定性分析

基于变形单壁碳纳米管能量色散关系,计算了碳纳米管最低导带的电子速度及有效质量随形变系数变化的各种曲线,以此推测碳纳米管输运性质的稳定性问题.计算结果表明：对于特定类型的碳纳米管,只当其形变发生在某特定方向、且处于低形变（形变系数ε≤002 ）区时,电子平均速度v_mean及平均有效质量m^*_mean随形变改变才会很小（相对改变量≤2%）,这意味着此时的碳纳米管低偏压电子输运性能是基本稳定的.而其他形变情形,电子平均速度v_mean或电子平均有效质量m^*_mean或两者随形变变化明显,甚至有跃变,这意味着其低偏压电子输运性能是不稳定的,甚至极不稳定. 关键词： 变形单壁碳纳米管 电子速度 电子有效质量 输运性能稳定性     

类石墨烯氮化碳结构(C3N)热传导机理研究

类石墨烯氮化碳结构(C₃N)作为一种全新的碳基二维半导体材料,由于其优异的机械和电子性能引起了研究者们的广泛关注,不同结构C₃N的热输运和声子输运机制还待进一步研究.本文构造了4种不同结构的C₃N,采用非平衡分子动力学与晶格动力学方法对不同结构的C₃N的热传导机理进行了研究.研究结果表明:1)在4种结构中M3热导率最高,M1次之,M4热导率最低;2)不同结构的C₃N的热导率具有明显的尺寸效应和温度效应.当样本长度较短时,声子主要以弹道输运的方式进行传输;当样本长度增大,扩散输运占主导地位;随着温度的升高,Umklapp散射在热输运中占据主导地位,使得热导率与温度具有1/T的依赖性.3)与M3相比,M1和M4结构中都存在更大的声子带隙,色散曲线进一步软化,低频和高频声子同时出现了局域化的特征,对热导率产生了显著的抑制作用.本文为更好地设计热管理材料提供了思路.     

碳纳米管热传导的分子动力学模拟研究

采用改进的经验键序作用势描述碳原子间的相互作用,应用分子动力学方法和Green-Kubo函数计算了碳纳米管的热导率.在模拟中,使用了重叠计算的方法来计算热流相关函数,大大减少了模拟步数.计算结果表明,碳纳米管的热导率以原子间作用力相互做功所引起的热流形式为主;热导率的值随着直径的增加而减小;在室温下,热导率的值随着温度的增加而增加,达到室温后逐渐收敛于定值.计算的单壁碳纳米管热导率在1000W/mK至4000W/mK之间,计算结果与实验结果基本符合. 关键词： 分子动力学 碳纳米管 热导率     

准一维Cr基超导体RbCr3As3的超导能隙

RbCr₃As₃是具有[（Cr₃As₃）^-]_∞线性链的准一维超导体,超导转变温度约为6.6 K.对RbCr₃As₃单晶进行了电输运和极低温热输运性质的研究.低温下,拟合了RbCr₃As₃正常态电阻率随温度的变化,发现其满足费米液体行为.通过拟合超导转变温度随磁场的关系,得到RbCr₃As₃单晶的上临界场约为25.6 T.对RbCr₃As₃进行了零场下的极低温热导率测量,得到其剩余线性项为7.5 μW·K^-2·cm^-1,占正常态热导率值的24%.测量不同磁场下RbCr₃As₃的热导率,发现与单带s波超导体相比较,RbCr₃As₃剩余线性项随磁场增加相对较快.这些结果表明RbCr₃As₃单晶很可能是有节点的非常规超导体.     

Measuring the thermal conductivity of a single carbon nanotube

Although the thermal properties of millimeter-sized carbon nanotube mats and packed carbon nanofibers have been readily measured, measurements for a single nanotube are extremely difficult. Here, we report a novel method that can reliably measure the thermal conductivity of a single carbon nanotube using a suspended sample-attached T-type nanosensor. Our experimental results show that the thermal conductivity of a carbon nanotube at room temperature increases as its diameter decreases, and exceeds 2000 W/mK for a diameter of 9.8 nm. The temperature dependence of the thermal conductivity for a carbon nanotube with a diameter of 16.1 nm appears to have an asymptote near 320 K. The present method is, in principle, applicable to any kind of a single nanofiber, nanowire, and even single-walled carbon nanotube.     

Thermal conductance of thin silicon nanowires

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30 nm has been measured from 20 to 100 K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.     

Thermal properties of single-walled carbon nanotube crystal

In this work, the thermal properties of a single-walled carbon nanotube (SWCNT) crystal are studied. The thermal conductivity of the SWCNT crystal is found to have a linear dependence on temperature in the temperature range from 1.9 K to 100.0 K. In addition, a peak (658 W/mK) is found at a temperature of about 100.0 K. The thermal conductivity decreases gradually to a value of 480 W/mK and keeps almost a constant in the temperature range from 100.0 K to 300.0 K. Meanwhile, the specific heat shows an obvious linear relationship with temperature in the temperature range from 1.9 K to 300.0 K. We discuss the possible mechanisms for these unique thermal properties of the single-walled carbon nanotube crystal.     

Theoretical calculations of thermophysical properties of single-wall carbon nanotube bundles

Carbon nanotube bundles are promising thermal interfacial materials due to their excellent thermal and mechanical characteristics.In this study,the phonon dispersion relations and density of states of the single-wall carbon nanotube bundles are calculated by using the force constant model.The calculation results show that the inter-tube interaction leads to a significant frequency raise of the low frequency modes.To verify the applied calculation method,the specific heat of a single single-wall carbon nanotube is calculated first based on the obtained phonon dispersion relations and the results coincide well with the experimental data.Moreover,the specific heat of the bundles is calculated and exhibits a slight reduction at low temperatures in comparison with that of the single tube.The thermal conductivity of the bundles at low temperatures is calculated by using the ballistic transport model.The calculation results indicate that the inter-tube interaction,i.e.van der Waals interaction,hinders heat transfer and cannot be neglected at extremely low temperatures.For(5,5) bundles,the relative difference of the thermal conductivity caused by ignoring inter-tube effect reaches the maximum value of 26% around 17 K,which indicates the significant inter-tube interaction effect on the thermal conductivity at low temperatures.     

碳纳米管电缆式复合材料的热导率

通过非平衡分子动力学方法, 对单壁碳管填充金纳米线的碳纳米管电缆式复合材料开展热导率的模拟分析. 采用Tersoff势函数描述碳-碳原子间的相互作用, Lennard-Jones长程作用势描述碳-金原子间的相互作用, 嵌入原子势函数描述金-金原子间相互作用. 研究结果表明: 相同尺寸下, 金纳米线的电子热导率相较于空碳管以及电缆式复合材料的声子热导率小很多, 对复合材料总热导率的贡献可以忽略; 由于管内金纳米线的存在, 其与碳管的相互作用使得碳管碳原子倾向于沿着轴向振动, 声子间U散射随之减少, 声子平均自由程增加, 导致复合材料热导率明显大于空碳管, 在100–500 K温度范围内高出约20%–45%, 但增大幅度随温升呈降低趋势; 复合材料热导率随着管长增加而增大, 变化趋势和空碳管相似, 但其增长幅度更大; 复合材料和空碳管的热导率随管径增大而减小, 且变化幅度基本一致. 关键词： 碳纳米管 纳米线 电缆式复合材料 导热     

Effect of magnetic field on Mott's variable-range hopping parameters in multiwall carbon nanotube mat

We report the temperature and magnetic field dependence of the conductivity of multiwall carbon nanotube mat in the temperature range 1.4-150 K and in magnetic fields up to 10 T. It is observed that charge transport in this system is governed by Mott’s variable-range hopping of three-dimensional type in the higher temperature range and two-dimensional type in the lower temperature range. Mott’s various parameters, such as localization length, hopping length, hopping energy and density of states at the Fermi level are deduced from the variable-range hopping fit. The resistance of the sample decreases with the magnetic field applied in the direction of tube axis of the nanotubes. The magnetic field gives rise to delocalization of states with the well-known consequence of a decrease in Mott’s T0 parameter in variable-range hopping. The application of magnetic field lowers the crossover temperature at which three-dimensional variable-range hopping turns to two-dimensional variable-range hopping. The conductivity on the lower temperature side is governed by the weak localization giving rise to positive magnetoconductance. Finally, a magnetic field-temperature diagram is proposed showing different regions for different kinds of transport mechanism.     

Charge transport in carbon nanotubes based materials: a Kubo–Greenwood computational approach

In this contribution, we present a numerical study of quantum transport in carbon nanotubes based materials. After a brief presentation of the computational approach used to investigate the transport coefficient (Kubo method), the scaling properties of quantum conductance in ballistic regime as well as in the diffusive regimes are illustrated. The impact of elastic (impurities) and dynamical disorders (phonon vibrations) are analyzed separately, with the extraction of main transport length scales (mean free path and localization length), as well as the temperature dependence of the nanotube resistance. The results are found in very good agreement with both analytical results and experimental data, demonstrating the predictability efficiency of our computational strategy. To cite this article: H. Ishii et al., C. R. Physique 10 (2009).     

碳纳米管中点缺陷对热导率影响的正交试验模拟分析

在碳纳米管的制备过程中, 各种点缺陷不可避免地存在于其晶格结构中, 对于碳管的热输运性质造成不可忽视的影响. 使用非平衡分子动力学方法, 选用反应经验键序势能, 模拟计算含有缺陷的碳纳米管的热导率. 尝试采用正交试验方法设计算例, 不但减少了计算量, 并且利于分析缺陷类型、 管长和管径三种结构因素对缺陷造成的热导率下降影响的主次和趋势. 重点研究了掺杂、 吸附和空位三类点缺陷的影响, 与无缺陷完整碳纳米管进行比较, 开展缺陷效应分析, 并进一步考察了环境温度等因素的影响. 模拟结果表明, 相对完整无缺陷碳管, 含有点缺陷的碳管热导率显着下降; 在有缺陷存在的情况下, 缺陷的类型对碳管热导率的影响最大, 管径次之, 管长影响相对最小; 缺陷类型对热导率影响力从大到小依次为: 空位 > 掺杂 > 吸附; 不同环境温度下, 点缺陷对碳管热导率的影响不尽相同.     

Ballistic–diffusive phonon transport and size induced anisotropy of thermal conductivity of silicon nanofilms

The effective thermal conductivity of nanofilms is size dependent due to the diffusive–ballistic transport of phonons. In this paper, we investigate the cross-plane phonon transport from the viewpoint of the phonon Boltzmann equation. A predictive model for the size dependent thermal conductivity is proposed and agrees well with the results of molecular dynamics simulation for silicon nanofilms. The ballistic transport has different effects on the heat conduction in the in-plane or cross-plane directions, which causes the anisotropy of thermal conductivity of nanofilms. Such anisotropy is also size dependent and vanishes with the increase of film thickness.