Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature

Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (ɛ′, ɛ″), loss tangent (tanδ), and the real and imaginary parts of the electric modulus (M′, M″) and ac conductivity (σ_ac) of this structure have been investigated in wide frequency a range of 1 kHz–5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (N_ss). The decrease in ɛ′ and ɛ″ with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M′ increase with increasing frequency and reach a maximum, M″ shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(σ_ac) vs ln(ω) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(σ_ac) vs ln(ω) plot indicated that there are three different conduction mechanisms in the Au/PVC + TCNQ/p-Si structure at room temperature.     

Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA–nickel acetate composite film interfacial layer

The admittance technique was used in order to investigate the frequency dependence of dielectric constant (????), dielectric loss (????), dielectric loss tangent (tan??), the ac electrical conductivity (?? _ac), and the electric modulus of PVA (Ni-doped) structure. Experimental results revealed that the values of ???? , ????, (tan??), ?? _ac and the electric modulus show fairly large frequency and gate bias dispersion due to the interface charges and polarization. The ?? _ac is found to increase with both increasing frequency and voltage. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal?Cpolymer?Csemiconductor (MIS) structures especially at low frequencies and in depletion and accumulation regions. The results of this study indicate that the ???? values of Au/PVA/n-Si with Nickel-doped PVA interfacial layer are quite higher compared to those with pure and other dopant/mixture??s of PVA.     

A.c. conductivity and relaxation in LiCoVO4 ceramics

The LiCoVO₄ compound is synthesized by solution-based chemical method. X-ray diffraction analysis exhibits a single phase nature of the compound with cubic structure. The dielectric constant (ε_r), tangent loss (tanδ) and a.c. conductivity (σ_ac) have been studied as a function of frequency and temperature using complex impedance spectroscopy (CIS) technique. The variation of (ε_r and tanδ) with frequency at studied temperatures shows a dispersive behavior at low frequencies. Frequency dependence of σ_ac at different temperatures obeys Jonscher’s universal power law governed by the relation: σ_ac = σ_dc + Aωⁿ, where n is the frequency exponent in the range of 0 ⩽ n ⩽ 1 and A is a constant that depends upon temperature.     

Influence of lithium potassium zirconate nanoparticles on the electrical properties and structural characteristics of poly(vinyl alcohol) films

We investigated the influence of lithium potassium zirconate (LiKZrO₃) nanoparticles on the electrical properties and structural characteristics of poly(vinyl alcohol) (PVA) films. PVA/LiKZrO₃ nanocomposite films were prepared by casting of aqueous solutions with varying LiKZrO₃ content (0.5, 1.0, and 2.0 wt.%). The dielectric constant (ε′), dielectric loss (ε″), AC conductivity (σ_ac), dielectric loss tangent (tan δ), and electric modulus (M′ and M″) of the nanocomposite films were measured over a range of frequencies at ambient temperature. The results show increases in σ_ac and M′ with frequency, whereas ε′, ε″, and tan δ decreased with increasing frequency. The films were also characterized using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and X-ray diffraction (XRD) techniques. DSC and XRD revealed the nature of LiKZrO₃ nanoparticle interaction with the PVA matrix. TGA analysis revealed an increase in thermal stability of the nanocomposites with increasing nanoparticle concentration. Scanning electron microscopy confirmed uniform dispersion of LiKZrO₃ nanoparticles in the PVA matrix.     

Influence of Al doping on electrical properties of Ni–Cd nano ferrites

We have reported the structural and electrical properties of nano particles of Al doped Ni_0.2Cd_0.3Fe_2.5O₄ ferrite using X-ray diffraction, dielectric spectroscopy and impedance spectroscopy at room temperature. XRD analysis confirms that the system exhibits polycrystalline single phase cubic spinel structure. The average particle size estimated using Scherrer formula for Lorentzian peak (3 1 1), has been found 5(±) nm. The results obtained show that real (ε′), imaginary (ε″) part of the dielectric constant, loss tangent (tan δ), and ac conductivity (σ_ac) shows normal behaviour with frequency. The dielectric properties and ac conductivity in the samples have been explained on the basis of space charge polarization according to Maxwell–Wagner two-layer model and the Koop’s phenomenological theory. The impedance analysis shows that the value of grain boundary impedance increases with Al doping. The complex impedance spectra of nano particles of Al doped Ni–Cd ferrite have been analyzed and explained using the Cole–Cole expression.     

Studies on vibrational, dielectric, mechanical and thermal properties of organic nonlinear optical co-crystal: 2,6-diaminopyridinium-4-nitrophenolate-4-nitrophenol

This article presents the vibrational, dielectric, mechanical and thermal properties of 2,6-diaminopyridine-4-nitrophenolate-4-nitrophenol co-crystals (DAP:NP) grown by slow evaporation solution growth technique. It crystallizes in orthorhombic noncentrosymmetric space group Pna2₁ with cell dimension a=10.86 Å, b=12.00 Å and c=13.53 Å; α=β=γ=90° with V=1764 Å³. Functional groups present in the molecule have been identified from FTIR study. Dielectric constant (ε_r), dielectric loss (tanδ) and ac conductivity (σ_ac) behaviors of the crystals have been studied at different temperatures. Presence of piezoelectric resonance peaks at lower frequency in dielectric measurements may increase the electro-optic coefficient of the crystals. Mechanical strength and its parameters of the grown crystals have been determined by Vickers microhardness test. TG/DTA analysis shows the melting point of the material is 150 °C and it undergoes two stages of decomposition.     

Effect of magnesium substitution on dielectric and magnetic properties of Ni-Zn ferrite

The dielectric and magnetic properties of Mg incorporated Ni-Zn spinel ferrites have been investigated. Ni_0.5−xZn_0.5Mg_xFe₂O₄ ferrites have been prepared by sol-gel auto-combustion technique. The as prepared ferrites were annealed at 673, 873 and 1073 K. The X-ray diffraction studies reveal the spinel structure of annealed ferrites. The TEM results are in agreement with XRD results. FTIR study has also been carried out to get insight into the structure of these ferrites. The dielectric measurements show that the dielectric constant (ε′), dielectric loss (tan δ) and conductivity (σ_ac) increase on incorporation of Mg in the Ni-Zn ferrite. ε′, tan δ and σ_ac also show dependence on temperature, frequency of external applied electric field and microstructure of the samples. The magnetic moment measurements reveal that the saturation magnetization (M_s) increases and coercivity (H_c) decreases with the increase in concentration of Mg²⁺ ions. M_s and H_c also show dependence on the annealing temperature.     

Spectroscopic investigations and electrical properties of PVA/PVP blend filled with different concentrations of nickel chloride

Films of PVA/PVP blend (50/50) filled with different concentrations of NiCl₂ were prepared by casting method. The prepared films were investigated by different techniques. XRD scans demonstrated that the peak intensity at 2θ≈20° decreased and the band width increased with increase in the concentrations of NiCl₂ content, which implied decrease in the degree of crystallization and hence causes increase in the amorphous region. UV-vis analysis revealed that the values of the optical band gap are affected with increase in NiCl₂ content. This indicates the formation of charge transfer complexes between the polymer blend and the filler. The rise of conductivity is significant with increased concentration of NiCl₂ filler; this reveals an increase in degree of amorphosity. AC conductivity (σ_ac) behavior of all the prepared films was investigated over the frequency range 42 Hz-5 MHz and under different isothermal stabilization in the temperature range 313-393 K. It suggests that the hopping mechanism might be playing an important role in the conduction process in high frequency region. The dielectric behavior was analyzed using dielectric permittivity (ε´, ε″) dielectric loss tangent (tan δ) and electric modulus (M″). The decrease in dielectric permittivity was observed with increase in the concentration of NiCl₂ filler. This suggests the role of NiCl₂ as filler to improve the electrical conductivity of PVA/PVP blend.     

Influence of frequency, temperature and composition on electrical properties of polycrystalline Co0.5CdxFe2.5−xO4 ferrites

Polycrystalline ferrites with general formula Co_0.5Cd_xFe_2.5−xO₄ (0.0?x?0.5) were prepared by sol-gel method. The dielectric properties ε′, ε″, loss tangent tan δ and ac conductivity σ_ac have been studied as a function of frequency, temperature and composition. The experimental results indicate that ε′, ε″, tan δ and σ_ac decrease as the frequency increases; whereas they increase as the temperature increases. These parameters are found to increase by increasing the concentration of Cd content up to x=0.2, after which they start to decrease with further increase in concentration of Cd ion. The dielectric properties and ac conductivity in studied samples have been explained on the basis of space charge polarization according to Maxwell and Wagner's two-layer model and the hoping between adjacent Fe²⁺ and Fe³⁺ as well as the hole hopping between Co³⁺and Co²⁺ ions at B-sites. The values of activation energies E_f for conduction process are determined from Arrhenius plots, and the variations in these activation energies as a function of Cd content are discussed. The complex impedance analysis is used to separate the grain and grain boundary of the system Co_0.5Cd_xFe_2.5−xO₄. The variations of both grain boundary and grain resistances with temperature and composition are evaluated in the frequency range 42 Hz-5 MHz.     

Dielectric dispersion in PbO-Sb2O3-As2O3:V2O5 glasses

Dielectric properties, viz. dielectric constant ε′, loss tan δ and a.c conductivity σ_ac (over a wide range of frequency and temperature) and dielectric breakdown strength of PbO-Sb₂O₃-As₂O₃ glasses doped with V₂O₅ (ranging from 0 to 0.5 mol%) are studied. Analysis of these results, based on optical absorption and ESR spectra, indicates that the insulating strength of the glasses is comparatively high when the concentration of V₂O₅ is about 0.3 mol% in the glass matrix.     

Mn2+doping-induced-effects on commensuration and incommensuration of potassium zinc chloride crystal

Undoped and Mn²⁺-doped with different concentrations of potassium zinc chloride (KZC) crystals were grown from aqueous solutions by slow evaporation. The dielectric constant (ε), dielectric losses (tan?δ) and ac conductivity (σ_ac) of the crystals in the ferroelectric-commensurate, incommensurate and normal phases have been measured as a function of frequency, in the range 1–100?kHz, and temperature, in the range 300–580?K. Virgin samples were subjected to measurements of the frequency dependence at selected temperatures and measurements of the temperature dependence was then followed using the same samples. The increase of ε with T could be due to a combination of conductivity, structural variations and discommensuration (DC) formation and pinning as well. The increase of tan?δ with temperature was attributed to relaxation loss in addition to conduction loss, which increases more rapidly with temperature. The ac conductivity (σ_ac) and tan?δ along the polar axis of KZC increased significantly with increasing Mn²⁺ content while ε decreased. σ_ac changed with frequency according to a power law of the form σ_ac?=?f? ^s where 0.15<s<1.27. A linear decrease of ε and tan?δ with increasing the frequency was also found. The obtained results were treated by considering the effect of Mn²⁺-doping on stripples nucleation, DC evolution/annihilation, DC-lattice formation and DCs pinning by the crystal lattice and/or structural defects for virgin and thermally treated samples.     

Thermal,dielectric and conductivity studies on PVA/Ionic liquid [EMIM][EtSO4] based polymer electrolytes

Polymer electrolyte films of (PVA+15 wt% LiClO₄)+x wt% Ionic liquid (IL) 1-ethyl-3-methylimidazolium ethylsulfate [EMIM][EtSO₄] (x=0, 5, 10, 15) were prepared by solution cast technique. These films were characterized using TGA, DSC, XRD and ac impedance spectroscopic techniques. XRD result shows that amorphosity increases as the amount of the IL in PVA+salt (LiClO₄) is increased. DSC results confirm the same (except (PVA+15 wt% LiClO₄)+10 wt% IL). The dielectric and conductivity measurements were carried out on these films as a function of frequency and temperature. The addition of IL significantly improved the ionic conductivity of polymer electrolytes. Relaxation frequency vs. temperature plot for (PVA+15 wt% LiClO₄)+x wt% IL were found to follow an Arrhenius nature. The dielectric behavior was analyzed using real and imaginary parts of dielectric constant, dielectric loss tangent (tan δ) and electric modulus (M′ and M″).     

Effect of vanadium pentoxide on the electrical, dielectric, and optical properties of poly(vinyl alcohol)/vanadium pentoxide nanocomposites

In this study, the effect of vanadium pentoxide (V₂O₅) on the electrical, dielectric, and optical properties of poly(vinyl alcohol) (PVA)/V₂O₅ nanocomposites was examined. The PVA/V₂O₅ nanocomposites were prepared by solution mixing, followed by film casting. The as-prepared films were characterized by X-ray diffraction, thermogravimetric analysis, as well as impedance spectroscopy. The obtained results indicated that, with increasing V₂O₅ content, the PVA composite exhibits considerable vestige of crystallization and the PVA peaks become broader. The electrical conductivity, σ _dc, increases as the temperature and the dopant level of V₂O₅ increase. The frequency dependence of alternating current conductivity was governed by a critical frequency, ω _p. The values of ω _p are found to be thermally activated. The loss tangent (tan δ) shows a peak with the frequency, which indicates a dielectric relaxation in these composites with relaxation time decreases with both temperature and V₂O₅ content increase. Optical absorption edge and direct and indirect energies for all mentioned samples were determined and discussed.     

Rietveld refinement and impedance spectroscopy of calcium titanate

Single phase perovskite CaTiO₃ has been synthesized by conventional solid state reaction technique. The ceramic was characterized by XRD at room temperature and its Rietveld refinement inferred orthorhombic crystal structure with the space group Pbnm. The field dependence of dielectric relaxation and conductivity was measured over a wide frequency range from room temperature to 673 K. Analysis of Nyquist plots of CaTiO₃ revealed the contribution of many electrically active regions corresponding to bulk mechanism, distribution of grain boundaries and electrode processes. The dc conductivity depicted a semiconductor to metal type transition. Frequency dependence of dielectric constant (ε′) and tangent loss (tan δ) show a dispersive behavior at low frequencies and is explained on basis of Maxwell-Wagner model and Koop's theory. Both conductivity and electric modulus formalisms have been employed to study the relaxation dynamics of charge carriers. The variation of ac conductivity with frequency at different temperatures obeys the universal Jonscher's power law (σ_ac α ω^s). The values of exponent ‘s’ lie in the range 0.13 ≤ s ≤ 0.33, which in light of CBH model suggest a large polaron hopping type of conduction mechanism.     

Modification of the dielectric properties of copper-doped CdIn2S4 single crystal

The study of the dielectric properties of a CdIn₂S₄〈3 mol % Cu〉 single crystal in alternating-current (ac) electric fields with frequencies f = 5 × 10⁴?3.5 × 10⁷ Hz has revealed the origin of dielectric loss (relaxation loss that is changed by the through current loss at high frequencies). It has been found that CdIn₂S₄〈Cu〉 has permittivity increment Δ?′ = 123, relaxation frequency f _r = 2.3 × 10⁴ Hz, and relaxation time τ = 43 μs. The doping of CdIn₂S₄ single crystal with copper (3 mol %) is established to substantially increase the permittivity (?′), dielectric loss tangent (tanδ), and ac conductivity (σ_ac). In this case, the frequency dispersion of ?′ and tanδ increases and that of σ_ac decreases.     

The role of As2O3 on the stability and some physical properties of PbO-Sb2O3 glasses

PbO-Sb₂O₃ glasses added with different concentrations of As₂O₃ (10-55 mol%) were prepared to understand their IR spectra, elastic properties (Young's modulus E, Shear modulus G, microhardness H), optical absorption and dielectric properties (constant ε, loss tan δ, ac conductivity σ_ac over a moderately wide range of frequency and temperature and breakdown strength in air medium at room temperature). Results have indicated that the structure of the PbO-Sb₂O₃-As₂O₃ glass is more rigid when the concentration of As₂O₃ is around 40 mol%.     

AC conductivity and dielectric behavior of bulk Furfurylidenemalononitrile

AC conductivity and dielectric behavior for bulk Furfurylidenemalononitrile have been studied over a temperature range (293–333 K) and frequency range (50–5×10⁶ Hz). The frequency dependence of ac conductivity, σ_ac, has been investigated by the universal power law, σ_ac(ω)=Aω^s. The variation of the frequency exponent (s) with temperature was analyzed in terms of different conduction mechanisms, and it was found that the correlated barrier hopping (CBH) model is the predominant conduction mechanism. The temperature dependence of σ_ac(ω) showed a linear increase with the increase in temperature at different frequencies. The ac activation energy was determined at different frequencies. Dielectric data were analyzed using complex permittivity and complex electric modulus for bulk Furfurylidenemalononitrile at various temperatures.     

Effect of Pb on the electrical properties of a-Ge20Se80 glasses

The present paper reports the effect of Pb impurity (low ∼2 at% and high ∼10 at%) on the ac conductivity (σ_ac) of a-Ge₂₀Se₈₀ glass. Frequency-dependent ac conductance and capacitance of the samples over a frequency range ∼100 Hz to 50 kHz have been taken in the temperature range ∼268 to 358 K. At frequency 2 kHz and temperature 298 K, the value of σ_ac increases at low as well as at higher concentration of Pb. σ_ac is proportional to ω^s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. The static permittivity (ε_s) increases at both Pb concentrations. These results have been explained on the basis of some structural changes at low and higher concentration of Pb impurity.     

Effect of carbon nanotubes implantation on electrical properties of sisal fibre–epoxy composites

In this paper, the effects of carbon nanotubes (CNT) implantation and sisal fibre size on the electrical properties of sisal fibre-reinforced epoxy composites are reported. For this purpose, the epoxy composites reinforced with CNT-implanted sisal fibre of 5 mm and 10 mm lengths were prepared by hand moulding and samples characterized for their electrical properties, such as dielectric constant (ε′), dielectric dissipation factor (tan δ) and AC conductivity (σ_ac) at different temperatures and frequencies. It was observed that the dielectric constant increases with increase in temperature and decreases with increase in frequency from 500 Hz to 5 KHz. Interestingly, the sample having CNT-implanted sisal fibre of 5 mm length exhibited the highest value of dielectric constant than the one with length 10 mm. This is attributed to the increased surface area of sisal fibre and enhancement of the interfacial polarization. At a constant volume and a length of 5 mm of the fibres, the number of interfaces per unit volume element is high and results in a higher interfacial polarization. The interfaces decrease as the fibre length increases, and therefore, the value of ε′ decreases at 10 mm fibre length. The peak value of the dielectric constant decreases with increasing frequency. A continuous decrease in dissipation factor (tan δ) with increasing frequency for all samples was observed, while at lower temperatures, the values of tan δ remains approximately same. The AC conductivity for 5 mm length sisal epoxy composite and 10 mm length sisal fibre–epoxy composites is higher than that of pure epoxy at all the frequencies.     

Dielectric properties of CaCu3Ti4O12–silicone resin composites

CaCu₃Ti₄O₁₂ (CCTO)–silicone resin composites with various CCTO volume fractions were prepared. Relatively high dielectric constant (ε=119) and low loss (tanδ=0.35) of the composites with CCTO volume fraction of 0.9 were observed. Two theoretical models were employed to predict the dielectric constant of these composites; the dielectric constant obtained via the Maxwell–Garnett model was in close agreement with the experimental data. The dielectric constant of CCTO–silicone resin composites showed a weak frequency dependence at the measuring frequency range and the loss tangent apparently decreases with increase in frequency.