Magnon-phonon coupling in antiferromagnetic FeCl2 ⋅ 2H2O

The temperature dependence of the Raman spectra of FeCl₂ 2H₂O demonstrate the existence of level crossing and repulsion between a one-magnon and a nearby phonon excitation. The magnon-phonon coupling constant derived from a two oscillator decoupling technique shows the same variation with temperature as the measured sublattice magnetization. In addition the temperature dependences of the energies and of the half-widths of the uncoupled magnon and phonon states are derived and discussed.A project of the Sonderforschungsbereich 65 Festkörperspektroskopie Darmstadt-Frankfurt, supported by the Deutsche Forschungsgemeinschaft     

α-In2S3 and β-In2S3 phases produced by SILAR technique

In₂S₃ films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In₂S₃ (cubic) and β-In₂S₃ (tetragonal) phases. The presence of the α-In₂S₃ phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37?eV with increasing thickness.     

IR impurity absorption in Sb2S3–GeS2(Ge2S3) chalcogenide glasses

The IR optical transmission spectra in the 4000–1000 cm⁻¹ (2.5–10 μm) region in the chalcogenide glasses (ChG) of the ternary Ge–Sb–S system of stoichiometric Sb₂S₃–GeS₂ and non-stoichiometric Sb₂S₃–Ge₂S₃ compositions are studied. The compositional dependences of the measured IR spectra connected with influence of O-, H- and C-based absorbed impurites are analyzed.     

Stability of Thin-Film Cu–As2S3 and Ag–As2S3 Structures

Technical Physics - Thin-film Cu–As2S3 and Ag–As2S3 structures obtained by successively evaporating Cu(Ag) and As2S3 in vacuum on glass substrates have been studied. Samples of these...     

Radiation-stimulated changes in the transmission of chalcogenide glasses of As2S3−Ge2S3

The radiative-optical properties of chalcogenide glass-like semiconductors of the As₂S₂−Ge₂S₃ system in the region of a topological 2D-3D-phase transition are investigated. It is shown that γ-irradiation of samples by an absorbed dose of 4.4 · 10⁶ Gy leads to a longwave shift of their optical-transmission edge in the spectrum. The effect observed depends on the structural type of the glasses investigated and changes considerably near the 2D-3D-phase transition. Two components of the transmission-edge shift are detected: a static component, which remains unchanged for a long time after irradiation of the samples, and a dynamic one, which gradually fades in 2–3 months. It is suggested that the microstructural mechanism of these changes is attributable to processes of coordination defect formation in the structural skeleton of the samples. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, pp. 657–660, September–October, 1999.     

氦原子2~3S—2~3P精密光谱研究

氦原子是最基本的多电子原子,其精密谱是十分理想的检验多电子量子电动力学计算的平台,同时也是利用原子能级结构测定精细结构常数α的理想体系,还能获得原子核结构信息.本文结合我们团队的工作,综述基于氦原子的少体原子精密光谱研究.其中,主要包括氦原子2~3P_J精细结构分裂,以及2~3S—2~3P跃迁频率测定等研究,并对相关工作的前景进行了展望.     

Inclusive γ(1S,2S,3S) photoproduction at the CEPC

Inclusive γ(1S,2S,3S) photoproduction at the future Circular-Electron-Positron-Collider(CEPC)is studied,using the non-relativistic quantum chromodynamics(NRQCD)factorization formalism.Including the contributions from both direct and resolved photons,we present different distributions for the γ(1S,2S,3S) production.Our results suggest that there will be considerable events,implying that well measurements of the T photoproduction can be performed to further study heavy quarkonium physics at electron-positron colliders,in addition to hadron colliders.This supplemental study is very important for clarifying the current situation regarding the heavy quarkonium production mechanism.     

Photodarkening in Amorphous As2S3 Thin Films

The photodarkening effect in amorphous As2S3 films is studied.The optical absorption edge shifts to a lower energy after illumination ar the bandgap light of 514.5nm wavelength by an argon laser.The shift in well annealed films can be recovered by annealing at 180℃ for 1 h but in un-annealed films it is irreversible.In addition,it was found that the magnitude of photodarkening ΔE increased with the increase of illumination light intensity and illumination time.The reversibility of photodarkening in amorphous As2S3 films can be applied in optical memories.     

自旋S=3/2和S=2 Blume-Capel模型相变的Monte Carlo研究

利用计算机MonteCarlo模拟,研究自旋S=3/2和S=2Blume-Capel模型的相图。与最近刚发展起来的适用于研究S>1的关联有效场相比较,得出如下结论:对于S=3/2和S=2,关联有效场过高地估计了它们的相变温度对于S=3/2的相图,除了有二级相变线外,还发现了一级相变线对于S=2,关联有效场同样过高地估计了三临界点的值。 关键词：     

ВЛИЯНИЕ СОДЕРЖАНИЯ К ИСЛОРОДА НА ЭЛЕКТРИЧЕСКИЕ И ТЕ РМОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ТРОЙНОЙ СИС ТЕМЫ Вi2Те3−x Sе x

, Bi₂Te_3–x Se _x . , , . , , . .

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Influence of oxygen content on electric and thermoelectric properties of ternary system Bi₂Te_3–x Se _x

A study is made of the influence of oxygen, contained in the semi-conducting system Bi₂Te_3–x Sé _x , on the electric and thermoelectric properties. It is shown that the addition of oxygen to the prepared samples Bi₂Te_2.4Se_0.6 causes a decrease in electric conductivity while the thermoelectric force remains unchanged. This influence is connected with a decrease in the mobility of the electrons but their concentration is not influenced by the presence of oxygen. Conclusions are reached as to the influence of oxygen on the efficiency of the conversion of thermal energy into electric energy and vice versa.

     

Bi2S3纳米复合材料的非线性光学性质

利用单光束 Z扫描技术 ,在波长为 1 .0 64μm、脉宽为 38ps条件下测定了不同热处理条件下表面包覆纳米 Bi2 S3 掺杂有机改性硅酸盐材料的三阶光学非线性。结果发现室温下自然干燥的样品和在 N2 气氛下 1 50℃加热处理 2小时后的样品的三阶光学非线性极化系数分别为5.8× 1 0 -1 3 esu和 3.7× 1 0 -1 2 esu。后者的三阶光学非线性极化系数比前者几乎大一个数量级。显然 ,适当的热处理能增强样品的三阶光学非线性。对此现象进行了分析和讨论。     

Identification of the 3s 2 3p 2 3 P 1,2 — 3s3p 3 5 S 2 0 intercombination transition in siliconlike Ni14+

The³P1, 2^{? 5}S ₂ ^o intercombination lines in Ni¹⁴⁺ have been identified in the EUV spectrum emitted by foil-excited Ni ion beams. The wavelengths are close to the theoretically predicted values. The relative intensities of the lines confirm the predicted branching ratios. In a most recent paper Ellis and Martinson [1] give predicted wavelengths and transition rates for the 3s²3p^{2 3}P_1,2 — 3s3p^{3 5}S ₂ ^o , intercombination transition in siliconlike ions with 16≤Z≤28. The data were obtained theoretically (and compared with other theoretical data by Huang [2]) but adjusted to match the known wavelengths of this transition in the first three ions of the sequence and the finestructure intervals of the³P state which are known for a few more ionization stages.     

GeS2-Ga2S3-KCl系统玻璃的拉曼光谱研究

对GeS2-Ga2S3-KCl准三元系统玻璃3个系列样品的室温拉曼谱进行了系统的探测和分析。根据准二元系统GeS2-KCl和Ga2S-KCl的熔融淬冷产物的观察和拉曼谱的分析，得出了在GeS2-Ga2S3-KCl系统玻璃中仅Ga2S和KCl发生了化学反应并产生了新结构单元GaS3/2Cl的结论。根据系列Ⅰ和Ⅲ拉曼谱的演变证实了引入的K^ 离子是以氯原子为最近邻配位且仅形成单壳层结构。根据K^ 离子对结构单元GaS3/2Cl和亚结构单元Ga2S4Cl2影响的分析，成功地解释了GeS2-Ga2S3-KCl准三元系统玻璃中的拉曼谱演变。     

掺稀土的Y_2O_3、La_2O_3和Y_2O_2S粉末层的电致发光

掺三价稀土离子的场致发光荧光体发射铣线状光谱,它是(4f)电子组态内跃迁的特征,光谱范围从红到兰。这类荧光体之所以引起人们的兴趣,是因为有可能将它们应用于彩色平板显示器中去。已经报道过一些掺稀土的ZnS粉末的电致发光的研究工     

Super-linear frequency dependence of ac conductivity of disordered Ag2S–Sb2S3 at cryogenic temperatures

The ac conductivity of a new class of disordered solids, i.e. mechanochemically synthesized amorphous fast ion conducting Ag₂S–Sb₂S₃ materials, has been investigated in the audio frequency range (10–10⁷?Hz) down to cryogenic temperatures (～10?K). The conductivity spectra exhibit the usual signature of a disordered system at higher temperatures, well described by the Jonscher power law (JPL) i.e., σ′(ω)?=?σ _dc?+?A(T)ω*, although the frequency exponent (n?<?1) is found to be a weak function of temperature. However, as the temperature is lowered, the frequency width of the σ _dc region decreases gradually and that of the JPL region increases. Eventually, the σ _dc region disappears and the JPL region alone dominates the spectrum. However, at the lowest temperatures, both the σ _dc and JPL regions disappear and σ′(ω) obeys a super-linear power law (SPL) (σ′?∝?ω^m , m?≥?1). It is observed that the SPL has strikingly similar characteristics to the well-established nearly-constant-loss (NCL) behaviour corresponding to m?=?1. Both SPL and NCL appear in the same time–temperature (low-temperature/low-frequency) domain. Furthermore, in both cases the conductivity is a distinctly weak function of temperature but quite sensitive to frequency, and the SPL/NCL?→?JPL crossover frequency is thermally activated with almost the same energy as the ac activation energy. The presence of the SPL is further manifested in the form of a well-defined minimum in the dielectric loss, ε″(ω), spectra. It is therefore proposed that the entire low-temperature/low-frequency spectra can be described by a modified Jonscher power law, σ′(ω)?=?σ _dc(T)?+?A(T) ωⁿ ?+?B(T)ω^m , m?=?1 (NCL), m?>?1 (SPL), where the second term with n?<?1 accounts for the JPL and the third term with m?≥?1 accounts for SPL/NCL. The results and some other low-temperature/low-frequency conductivity data are consistent with an asymmetric double well potential (ADWP) model.     

SiO2凝胶玻璃中联吡啶S2→S0S辐射跃迁

联吡啶以分子水平掺入SiO2凝胶玻璃中，显示出独特的光谱性质。其发射光谱除了正常的S1→S0跃迁产生的中心位于400nm的发射峰外，还出现了中心位于454nm的激基缔合物发射峰。经200℃处理后，联吡啶分子受Si-O网络刚性约束，激基缔合发射峰消失，出现了基于S2→S0辐射跃迁产生的325nm高能级发射峰。至550℃处理后，因联吡啶分子基本进入Si-O三维网络的间隙，发射光谱中只剩下振动结构明显的高能级荧光峰。上述结果为表征有机／无机复合材料微结构演变提供了荧光探针工具。     

类钠CrⅩⅣ-FmXC离子3s^2S1／2-3p^2P1／2，3／2的跃迁计算

用多组态HFR方法系统地计算了高剥离粪钠CrⅩⅣ-FmXC离子（Z=24-100）单电子组态的能级，相应谱线的跃迁波长，跃迁概率和振子强度，在已有实验的基础上，用自编的Fortran程序对HF计算的3p^2P1／2,3／2能级结果进行了最小二乘拟合计算，从而预测计算了CrⅩⅣ-FmXC离子3s^2S1／2-3p^2P1／2,3／2跃迁的谱线波长。计算结果与已有的实验值均符舍得很好，尤其是与最近测量的实验值相当一致：而与其他理论预测值也基本吻合。     

掺杂Gd^3＋对Y2O2S：Eu^3＋发光特性的影响

在红色荧光粉Ｙ２Ｏ２Ｓ：Ｅｕ＾３＋的制备过程中掺入了不同浓度的Ｇａ２Ｏ３;发现在掺入适当浓度的Ｇａ２Ｏ３的情况下,可以增强发射强度并改善其电压特性,即在保证所要求的发光颜色、粒径和其它物理及化学特性的条件下,可改善发射强度与激发电压间的关系,讨论和分析了强度被增强的起因。Ｇａ＾３＋对Ｙ＾３＋的置换,减少了因Ｅｕ＾３＋对Ｙ＾３＋转换所引起的晶格的畸变,从而减弱了无辐射过程及因晶格畸变所造成的能量损失     

Lithium vapour excitation at 2S→3D two-photon resonance

We report study of processes which occur in lithium vapour under two-photon excitation of the Li(3D) state at 639.1 nm. A time-resolved technique has been used to measure the fluorescence from the Li(3D), Li(2P) and Li(3P) states. We have determined radiation rates for lithium atom densities in the range 10¹³–10¹⁴ cm^?3 and laser powers (10⁵–10⁶ Wcm^?2). The ground-state lithium atom density was determined by knowing temperature and vapour pressure in a modified heat-pipe oven. The contribution to radiation rates from different processes and prospect for cross-section determination of homonuclear reverse energy-pooling are discussed.