We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. 相似文献
In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin‐film transistor (TFT) using room‐temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub‐threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub‐threshold swing and high mobility could be ascribed to the combination of high‐κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low‐temperature and low‐power portable electronics.
Ta2O5/Al2O3 stacked thin film was fabricated as the gate dielectric for low-voltage-driven amorphous indium–gallium–zinc-oxide (IGZO) thin film transistors (TFTs). The Ta2O5/Al2O3 stacked thin film exhibits a combination of the advantages of Al2O3 and Ta2O5. The IGZO TFT with Ta2O5/Al2O3 stack exhibits good performance with large saturation mobility of 26.66 cm2 V−1 s−1, high on/off current ratio of 8 × 107, and an ultra-small subthreshold swing (SS) of 78 mV/decade. Such small SS value is even comparable with that of submicrometer single-crystalline Si MOSFET. 相似文献
In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y2O3 as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm2/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 °C in N2 containing 5% H2 ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 104. It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y2O3 is observed in the range between 5.1 and 5.4 measured on various devices. 相似文献
We have fabricated indium–gallium–zinc (IGZO) thin film transistor (TFT) using SiOx interlayer modified aluminum oxide (AlOx) film as the gate insulator and investigated their electrical characteristics and bias voltage stress. Compared with IGZO-TFT with AlOx insulator, IGZO-TFT with AlOx/SiOx insulator shows superior performance and better bias stability. The saturation mobility increases from 5.6 cm2/V s to 7.8 cm2/V s, the threshold voltage downshifts from 9.5 V to 3.3 V, and the contact resistance reduces from 132 Ωcm to 91 Ωcm. The performance improvement is attributed to the following reasons: (1) the introduction of SiOx interlayer improves the insulator surface properties and leads to the high quality IGZO film and low trap density of IGZO/insulator interface. (2) The better interface between the channel and S/D electrodes is favorable to reduce the contact resistance of IGZO-TFT. 相似文献
The instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with different active layer thicknesses under temperature stress has been investigated through using the density-of-states (DOS). Interestingly, the a-IGZO TFT with 22 nm active layer thickness showed a better stability than the others, which was observed from the decrease of interfacial and semiconductor bulk trap densities. The DOS was calculated based on the experimentally-obtained activation energy (EA), which can explain the experimental observations. We developed the high-performance Al2O3 TFT with 22 nm IGZO channel layer (a high mobility of 7.4 cm2/V, a small threshold voltage of 2.8 V, a high Ion/Ioff 1.8 × 107, and a small SS of 0.16 V/dec), which can be used as driving devices in the next-generation flat panel displays. 相似文献
We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm2/V s and an off-state leakage current of 3.8×10−11 A/μm at the drain voltage of −5 V and the gate voltage of 10 V. 相似文献
Low-voltage-drive ZnO thin-film transistors (TFTs) with room-temperature radio frequency magnetron sputtering SiO2 as the gate insulator were fabricated successfully on the glass substrate. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 4.2 V, a field effect mobility of 11.2 cm2/V s, an on/off ratio of 3.1 × 106 and a subthreshold swing of 0.61 V/dec. The drain current can reach to 1 mA while the gate voltage is only of 12 V and drain voltage of 8 V. The C–V characteristics of a MOS capacitor with the structure of ITO/SiO2/ZnO/Al was investigated. The carrier concentration ND in the ZnO active layer was determined, the calculated ND is 1.81 × 1016 cm−3, which is the typical value of undoped ZnO film used as the channel layer for ZnO-TFT devices. The experiment results show that SiO2 film is a promising insulator for the low voltage and high drive capability oxide TFTs. 相似文献
In this work, solution-processed indium oxide (In2O3) thin film transistors (TFTs) were fabricated by a two-step annealing method. The influence of post-metal annealing (PMA) temperatures on the electrical performance and stability is studied. With the increase of PMA temperatures, the on-state current and off-state current (Ion/Ioff) ratio is improved and the sub-threshold swing (SS) decreased. Moreover, the stability of In2O3 TFTs is also improved. In all, In2O3 TFT with post-metal annealing temperature of 350°С exhibits the best performance (a threshold voltage of 4.75 V, a mobility of 13.8 cm2/V, an Ion/Ioff ratio of 1.8 × 106, and a SS of 0.76 V/decade). Meanwhile, the stability under temperature stress (TBS) and positive bias stress (PBS) also show a good improvement. It shows that the PMA treatment can effectively suppress the interface trap and bulk trap and result in an obviously improvement of the In2O3 TFTs performance. 相似文献
We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse. 相似文献
In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 1011 cm–2 eV–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10–5A/cm2 at Vfb + 1 V). These merits should be attributed to the complementary properties of Y2O3 and Ta2O5:Y can effectively passivate the large amount of oxygen vacancies in Ta2O5, while the positively‐charged oxygen vacancies in Ta2O5 are capable of neutralizing the effects of the negative oxide charges in Y2O3. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.
Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets. 相似文献