Controllable porous fluorinated polyimide thin films for ultralow dielectric constant interlayer dielectric applications

In this paper, silica microspheres were used as template to prepare porous fluorinated polyimide (FPI) thin films from polyamic acid (PAA, precursor of FPI) and silica colloid solution. The strong hydrogen-bonding interaction between silica microspheres and PAA chains have improved the dispersion of silica microspheres in N,N-Dimethylformamide (DMF) solution, resulting in the high weight content of silica template in PAA/silica colloid solution, and thus giving rise to the formation of porous FPI films with maximum porosity of 35%. The interior microstructures of the resultant porous FPI thin films were investigated. It is found that the porous FPI thin films have interconnected “ink-bottle-type” porous structure, and the pore size, porosity could be precisely controlled by the diameter and weight content of silica microspheres, respectively. Although both the tensile strength and young modules declined with the increasing porosity, the high level void of the porous FPI films endowed the FPI ultralow dielectric constant of 1.84 when the porosity increased to 35%. Furthermore, the mechanical and dielectric properties of the porous FPI films were closely related to the microstructures and porosity, indicating the desired properties could be controlled to meet the application in the microelectronics.     

Preparation of polyimide/BaTiO3‐nanocrystal hybrid thin films and their dielectric property

High dielectric constant is highly desirable in capacitors and memory devices. In this work, oleic acid (OA)‐capped BaTiO₃ nanocrystals were synthesized by a two‐phase approach. Polyimide (PI)/BaTiO₃‐nanocrystal composite thin films with high dielectric constant have been successfully fabricated. The morphologies and dielectric properties of the hybrid films were exploited. The results showed that BaTiO₃ nanocrystals can be uniformly dispersed in the PI thin films owing to the surface modification of OA‐capped BaTiO₃ nanocrystals. It was found that the dielectric constant of composite film varies with the volume fraction of BaTiO₃ nanocrystals and sintering temperatures and reaches a maximum value of 44.1, which is around 13 times higher than that of pristine PI thin film (3.2). These results demonstrated that PI/BaTiO₃‐nanocrystal composite films have considerable application potential in microelectronic fields.     

Lowering the dielectric constant of polyimide thin films by swelling with supercritical carbon dioxide

The swelling with supercritical carbon dioxide (sc‐CO₂) of thin films of polyimides having various structures was investigated. It was shown that the degree of swelling is significantly influenced by the solvent which was used for the synthesis of those polyimides, by the solvent which was used for the preparation of thin films and by the conformational rigidity of the polymers. The presence of hexafluoroisopropylidene groups in the main chain of a polymer prevents its swelling with sc‐CO₂. The best results were obtained for polyimide film ULTEM, based on m‐phenylene‐diamine and isopropylidene‐diphenoxy‐bis(phthalic anhydride), synthesized in benzoic acid, whose free volume increased twice and its dielectric constant decreased from 3.15 to 2.45 by swelling with sc‐CO₂. Copyright © 2013 John Wiley & Sons, Ltd.     

AFM,ellipsometry, XPS and TEM on ultra-thin oxide/polymer nanocomposite layers in organic thin film transistors

Here we report on the fabrication and characterization of ultra-thin nanocomposite layers used as gate dielectric in low-voltage and high-performance flexible organic thin film transistors (oTFTs). Reactive sputtered zirconia layers were deposited with low thermal exposure of the substrate and the resulting porous oxide films with high leakage currents were spin-coated with an additional layer of poly-α-methylstyrene (PαMS). After this treatment a strong improvement of the oTFT performance could be observed; leakage currents could be eliminated almost completely. In ellipsometric studies a higher refractive index of the ZrO₂/PαMS layers compared to the “as sputtered” zirconia films could be detected without a significant enhancement of the film thickness. Atomic force microscopy (AFM) measurements of the surface topography clearly showed a surface smoothing after the PαMS coating. Further studies with X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) also indicated that the polymer definitely did not form an extra layer. The polymer chains rather (self-)assemble in the nano-scaled interspaces of the porous oxide film giving an oxide–polymer “nanocomposite” with a high oxide filling grade resulting in high dielectric constants larger than 15. The dielectric strength of more than 1 MV cm⁻¹ is in good accordance with the polymer-filled interspaces.     

Polyimide/polyoxometalate copolymer thin films: synthesis,thermal and dielectric properties

A mono‐lancunary keggin‐type decatungstosilicate (SiW₁₁) polyoxometalate (POM) modified by γ‐aminopropyltriethoxysilane (KH550) was incorporated into polyimide (PI) through copolymerization. Nuclear magnetic resonance (NMR), fourier transition infrared spectroscopy (FTIR), and wide angle X‐ray diffraction (WAXD) were used to characterize the structure and composition of the polyoxometalate–organosilane hybrid (SiW₁₁KH550) and PI/SiW₁₁KH550 copolymers. The differential scanning calorimetry (DSC) studies indicate that the glass transition temperature (T_g) of PI/SiW₁₁KH550 copolymers increases from 330°C (for neat PI) to 409°C (for the copolymer sample with 10 wt% of SiW₁₁KH550). Dielectric measurement showed that both the dielectric constant and the dielectric loss for the copolymer thin films decreased with the increase in SiW₁₁KH550 content, and the dielectric constant and dielectric loss values decreased to 2.1 and 3.54 × 10^?3, respectively, for the copolymer sample with 10 wt% of SiW₁₁KH550. The incorporation of SiW₁₁KH550 into polymer matrices is a promising approach to prepare PI films with a low dielectric constant and low dielectric loss. Copyright © 2009 John Wiley & Sons, Ltd.     

Synthesis and characterization of fully aliphatic polyimides from an aliphatic dianhydride with piperazine spacer for enhanced solubility,transparency, and low dielectric constant

A new series of fully aliphatic polyimide (API) based on a novel aliphatic dianhydride monomer‐2,2′‐(1,4‐piperazinediyl)‐disuccinic anhydride (PDA), in which two units of succinic anhydride have been connected by an aliphatic heterocyclic piperazine spacer that possesses aminomethylene (‐NCH₂) moiety in the aliphatic/alicylic backbone capable of inducing charge transfer (CT) interactions in the polyimide network, was successfully synthesized. The APIs were soluble in common polar organic solvents. The polyimide films of PDA with alicyclic diamines were almost colorless. T₁₀ (temperature of 10% weight loss) of APIs were ranged from 299–418 °C and T_g of API3‐API6 were in the temperature range of 170 to 237 °C. The light‐colored polyimide films of API3‐API6 possessed good mechanical properties with tensile strength of 54–72 Mpa, tensile modulus of 1.6–2.3 Gpa and elongation at break of 4–9%. The polyimide films of API3‐API6 were highly flexible and free‐standing which is quite rare in fully APIs. The dielectric constant of one of the synthesized API (API4) was as low as 2.14. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 2316–2328     

Chain orientation and anisotropies in optical and dielectric properties in thin films of stiff polyimides

Thin films of poly(p-phenylene biphenyltetracarboximide) (BPDA-PDA), prepared by thermal imidization of the precursor poly(amic acid) on substrates, have been investigated by optical waveguide, ultraviolet-visible (UV-VIS), infrared (IR), and dielectric spectroscopies. The polyimide films exhibit an extraordinarily large anisotropy in the refractive indices with the in-plane index n_∥ = 1.806 and the out-of-plane index n_⊥ = 1.589 at 1064 nm wavelength. No discernible effect of the film thickness on this optical anisotropy is found between films of ca. 2.1 and ca. 7.8 μm thickness. This large birefringence is attributed to the preferential orientation of the biphenyltetracarboximide moieties with their planes parallel to the film surface, coupled with the strong preference of BPDA-PDA chains to align along the film plane. The frequency dispersion of the in-plane refractive index n_∥ is consistent with the results calculated by the Lorentz–Lorenz equation from the UV-visible spectrum exhibiting several absorption bands in the 170–500 nm region. The contribution from the IR absorption in the range 7000–400 cm,^?1 computed by the Spitzer-Kleinmann dispersion relations from the measured spectra, adds ca. 0.046 to the in-plane refractive index n_∥. Tilt-angle–dependent polarized IR results indicate nearly the same increase for the out-of-plane index n_⊥. Application of the Maxwell relation then leads to the out-of-plane dielectric constant ε^⊥ ? 2.7 at 1.2 × 10¹³ Hz, as compared with the measured value of ca. 3.0 at 10⁶ Hz. Assuming this small difference to remain the same for the in-plane dielectric constants ε_∥, we obtain a very large anisotropy in the dielectric properties of these polyimide films with the estimated in-plane dielectric constant ε_∥ ? 3.4 at 1.2 × 10¹³ Hz, and ε_∥ ? 3.7 at 10⁶ Hz. © 1992 John Wiley & Sons, Inc.     

Octahedral oligomeric silsesquioxane (OAPS and OG) - Polyimide hybrid nanocomposite films: Thermo-mechanical,dielectric and morphology properties

Abstract

The nano-sized SQS based polyimides have been successfully synthesized with different oxide groups such as phosphineoxide, sulfone and siloxane as in the backbone of polymer. The SQS-Polyimide nanocomposites prepared through the condensation process using amine and epoxy functionalized SQS as precursor. The presence of SQS in the resulting polyimide nanocomposites was confirmed by FTIR and XRD analyses. The presence of SQS and greatly enhances the char yield to an extent of 16% when compared to that of neat polyimide. The incorporation of SQS into polyimide lowered the value of dielectric constant from 3.31 to 2.09 at 1?MHz and the value of thermal expansion coefficient from 56.6 to 42.7?ppm/K. The composites sample prepared using 20?wt% SQS possess the lowest value of dielectric constant and CTE value. The hydrophobic nature of SQS contributes to lower the water uptake of composites from a value of 2.76 (neat polyimide) to 2.42 for POS-PI containing 20?wt% SQS. Further, the SQS polyimide composite systems possess the enhanced values of thermal stability and glass transition temperatures according their percentage weight. Data obtained from different studies, it is suggested that these hybrid composites can be used as an effective insulation materials for high performance microelectronics applications.     

Preparation and dielectric properties of polyimide/silica nanocomposite films prepared from sol–gel and blending process

Using poly(amic acid) (PAA) as a precursor followed by thermal imidization, the polyimide/silica nanocomposite films were prepared via an improved sol–gel process and a blending process, respectively. FT‐IR, TEM and TGA measurements were used to characterize the structure and properties of the obtained films. The results confirmed that the introduction of silica did not yield negative effects on the conversion of the PAA precursor to the polyimide. With the increase of silica content, the aggregation of silica appeared in the polyimide matrix, and the thermal stability decreased slightly for both kinds of films. The dielectric constant (ε) of both films increased slowly with the increase of the silica concentration. The dielectric constant of the obtained polyimide/silica nanocomposite films displayed good stability within a wide range of temperatures or frequency. Based on modeling relation between ε and silica content, the difference in dielectric properties for two kinds of nanocomposites are discussed. Copyright © 2007 John Wiley & Sons, Ltd.     

Sol-gel processing and properties of cerium doped Barium Strontium Titanate thin films

A stock solution sol-gel based method for making Barium Strontium Titanate (BST) thin films has been developed. A modified titanium alkoxide was combined with a barium and/or strontium inorganic salt in methoxyethanol and ethylene glycol to form the solution. The effect of chemistry on the stability of this BST solution is discussed. The crystallization temperature of 700–725°C for rapid thermally processed films dropped by 100°C using cerium doping. The permittivity for undoped films was 250 and doping by 3 at. % Ce increased the dielectric constant by 20%. A remanent polarization of approximately 0.5 C/cm² and coercive field of 28 kV/cm were measured for the undoped films. The leakage current densities were <10 nA/cm² at E=60 kV/cm and improved for cerium concentrations up to 3 at. %. The charge storage density was 50 fF/m² at 200 kV/cm and the DC breakdown voltage was 300 kV/cm for Ce doped films.     

Effects of alicyclic moiety incorporation on the properties of polyimide/silica hybrid films

Polyimide (PI)/silica hybrid films were prepared from tetraethyl orthosilicate (TEOS) using a sol‐gel process as well as pyromellitic dianhydride and 4,4‐oxydianiline. 1,4‐Cyclohexanedicarboxylic acid (1,4‐CHDA) was added as a coupling agent. The PI/silica hybrid films were characterized by Fourier transform infrared spectroscopy, field emission scanning electron microscopy, differential scanning calorimetry and wide‐angle X‐ray diffraction. The thermal, tensile and dielectric properties of the hybrid films were measured. The results showed that the tensile and dielectric properties of the hybrid films improved with increasing silica concentration and 1,4‐CHDA content in the PI matrix. Covalent ester bonds were formed between SiOH groups of silica and carboxyl groups of 1,4‐CHDA. As a result, the silica particle size was reduced and dispersed homogeneously in the PI matrix, leading to increased tensile strength and tensile modulus of the typical hybrid film with 1,4‐CHDA (PI‐2), when compared with the PI/silica hybrid film without 1,4‐CHDA at the same silica contents. The presence of an alicyclic moiety containing silica in PI reduced the dielectric constant considerably to 2.83, which was lower than that of pristine PI. Copyright © 2016 John Wiley & Sons, Ltd.     

Effects of trace metals and organic additives on porosity and dielectric constant of high purity mesoporous silica films

The beneficial effects that alkali metal and alkylammonium salt additions to molecularly templated silica sols have on the resulting mesoporous silica films formed from evaporative-coating methods with respect to porosity, elastic modulus, dielectric constant, and film surface uniformity were investigated and identified.     

Synthesis and characterization of fluorinated benzoxazole polymers with high Tg and low dielectric constant

Next generation microelectronic packaging requirements are driving the need to produce increasingly lower dielectric constant materials while maintaining high thermal stability and ease of processing. Efforts have focused on the synthesis and analysis of new polymers with the goals of high thermal stability [degradation temperature (T_d) > 400 °C, low glass‐transition temperature (T_g) > 350 °C], low water uptake (<1%), solubility in selected organic solvents, dielectric constant less than 2.5, and low thermal expansion coefficient. These stringent combined goals have been largely achieved with flexible aromatic benzoxazole polymers. Intramolecular hydrogen bonding between pendant hydroxyl groups and the double‐bond nitrogen of the benzoxazole has been exploited to increase the polymer T_g, whereas the incorporation of perfluoroisopropyl units effectively decreases the dielectric constant. Out‐of‐plane impedance measurements on films of materials in this family (38–134 μm thick) have resulted in typical dielectric values of 2.1–2.5 at 1 MHz, depending on copolymer ratios and functionalizations. Results have been correlated with optical waveguide measurements of films 4‐μm thick to determine film anisotropy and the high‐frequency dielectric constant, and have been corroborated by in‐plane interdigitated electrode dielectric measurements on samples 0.75 μm thick. Candidate materials exhibited extremely low water uptake (0.2%) even after submersion in boiling water for several days. Dynamic mechanical analysis of the polymers enabled the determination of the influence of intermolecular hydrogen bonding on the T_g and loss tangent magnitude. Finally, the coefficient of thermal expansion has been examined and correlated with copolymer constitution. © 2000 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 38: 1991–2003, 2000     

High performance organic transistors and phototransistors based on diketopyrrolopyrrole-quaterthiophene copolymer thin films fabricated via low-concentration solution processing

Herein, highly crystalline diketopyrrolopyrrole-quaterthiophene copolymer thin films were achieved by a simple low-concentration solution processing with a little material waste, which exhibit efficient charge transport and optoelectronic properties for constructing high performance OFET and phototransistors.     

Fibers from a low dielectric constant fluorinated polyimide: Solution spinning and morphology control

Control of the internal morphology of wet-spun fibers from a fluorinated polyimide has been achieved by varying the rate of polymer coagulation through adjustments in nonsolvent/solvent miscibility and precipitation strength of the coagulation bath. Filament internal morphologies ranged from very porous or sponge-like to fully solid. Intermediate structures included fibers containing a spongy core with a nonporous skin, sponge-like fibers containing large voids, and a relatively solid material containing randomly spaced small voids. The cross-sectional shape of the fiber is dependent upon the coagulation process as well as the volume contraction of the initial extrudate. Drawn fibers (3×) retained the original asspun cross-sectional shape and also lost porosity. Mechanical properties of poly(6FDA-4BDAF) fibers have an inverse relationship to filament porosity. Maximum modulus and break strength for drawn fibers is approximately 6 CPa and 200 MPa, respectively. Asspun mechanical properties were dependent upon the processing conditions and have moduli between 0.4–3.0 Gpa and break strengths of 10–160 MPa. A dielectric constant of 2.50 for nonporous films was measured over a frequency range between 1.0 MHz to 1.8 GHz, showing little dispersion. © 1997 John Wiley & Sons, Inc.     

Synthesis and characterization of novel fully aliphatic polyimidosiloxanes based on alicyclic or adamantyl diamines

A series of fully aliphatic polyimidosiloxanes (APISiO) were prepared by poly(addition/condensation) reaction of bicyclo [2,2,2] oct‐7‐ene‐2,3,5,6‐tetracarboxylic dianhydride or cyclobutane‐1,2,3,4‐tetracarboxylic dianhydride and varying compositions of 1,3‐bis (3‐amino propyl)‐tetra methyl disiloxane and rigid adamantyl diamines (1,3‐diaminoadamantane or 3,3′‐diamino‐1,1′‐diadamantane) or flexible alicyclic diamines (4,4′‐methylene bis(cyclohexylamine) or 4,4′‐methylene bis(2‐methylcyclohexylamine)). High temperature one‐step synthesis in m‐cresol was employed to obtain APISiOs with intrinsic viscosity in the range of 0.28–0.59 dL/g. The final materials were characterized by ¹H and ¹³C NMR, ²⁹Si‐MAS‐NMR and IR spectroscopic analysis, thermogravimetric and differential scanning calorimetric analysis, and wide angle X‐ray diffractometry. UV–visible spectra revealed the optical behavior of the polyimides. It was found that the APISiOs containing appropriate ratio of adamantyl moieties together with flexible aliphatic siloxane groups exhibit good thermal and mechanical stabilities, solubility, fair transparency, and low dielectric constant (2.4–2.7). © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 5254–5270, 2006     

Synthesis and studies of thermal,mechanical and electrical properties of MWCNT–cyclodextrin as a nanoparticle in polyamide matrix based on 2,2‐Bis[4‐(4‐aminophenoxy)phenyl] propane

In the present research, polyamide (PA) ( 6 ) was synthesized by the polycondensation reaction of 2,2‐Bis[4‐(4‐aminophenoxy)phenyl] propane as a diamine ( 4 ) with adipic acid ( 5 ) in the optimized condition. The resulting PA was characterized using Fourier transform infrared spectroscopy, Proton Nuclear Magnetic Resonance (¹H NMR) spectroscopy, inherent viscosity (η_inh), X‐ray diffraction, and solubility tests. Also, the thermal property of the new PA ( 6 ) was investigated by using Thermogravimetric analysis. To apply multiwall carbon nanotube (MWCNT) as an effective reinforcement in polymer composites, it is essential to have appropriate proper dispersion, interfacial adhesion between the MWCNT and polymer matrix, and increasing solubility. With this end particularly, functionalized MWCNTs were combined with a soluble molecule, and a series of modified MWCNT with cyclodextrin (Cy) known as PA/MWCNT‐Cy composite film (2, 5, and 8 wt%) were prepared by a solution intercalation technique. Field emission scanning electron microscopy images showed that MWCNT‐Cy was well dispersed in the PA matrix. Thermogravimetric analysis indicated an increase in thermal stability of nanocomposites as compared with the pristine PA. Anisotropic structure of the synthesized films and dispersed MWCNT‐Cy in the films approved by use of X‐ray diffraction and field emission scanning electron microscopy. The resultant PA/MWCNT‐Cy composite films were electrically conductive, which is favorable for many practical uses. Measurements of mechanical properties of these composite films showed high strength in 8% MWCNT‐Cy content. Also, results showed increases in Young's modulus and tensile strength. Copyright © 2016 John Wiley & Sons, Ltd.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.     

Vertical confinement and interface effects on the microstructure and charge transport of P3HT thin films

Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of ∼20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices. © 2013 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2013     

Influence of the dielectric constant on ion-pair and ion-ligand complex formation

The effect of dielectric constant on ion association of triethylammonium picrate and methylimidazolium picrate and on ion-ligand complex formation between the cations Et₃NH⁺ and MeImH⁺ and 1-methylimidazole was investigated from conductance data carried out in nitrobenzene-benzene mixtures (34.8K _A satisfy in first approximation the relation logK _A 1/D. The center-to-center distance å has been calculated and compared to the value obtained for nonhydrogenbonded ion pairs. The ion-ligand association constantK ₁ ⁺ increases as the dielectric constant of the medium decreases. Plots of logK ₁ ⁺ against 1/D give straight lines, the slopes of which are consistent with the predictions of a theory that interprets the effect of the dielectric constant in terms of changes in the polarization energy of the solvent around the complexed and the uncomplexed ions. For these interactions, the complexed ions can be approximated as charged spheres, the volume of which is equal to that of the bare ion plus the volume of the ligand.