非接触铜铝纳米薄膜侧向移动相互作用的分析

采用分子动力学方法模拟铜铝纳米薄膜相对侧向移动的相互作用能。研究了铜薄膜的侧向位移从0Å到50Å时温度、相互作用间距、表面形貌和表面粗糙度对作用能的影响。结果表明,相互作用强度随温度的增加而增大,随相互作用间距的减小而增大,随表面粗糙度的增大而减小。为研究薄膜在纳米尺度的相互作用提供了一个新的方法。     

纳米单晶与多晶铜薄膜力学行为的数值模拟研究

通过对不同温度下单晶薄膜的拉伸性能的分子动力学模拟，从微观角度揭示了温度效应对材料性能的影响. 结果表明温度效应对材料的变形机理影响很大.0K温度下由于缺乏热激活软化的影响, 粒子运动所受到的阻碍较大, 薄膜的强度较高, 塑性变形主要来自于粒子的短程滑移.温度升高，粒子的热运动加剧，屈服强度降低, 塑性变形将主要来自于大范围的位错长程扩展.多晶薄膜的模拟结果表明, 虽然其晶粒形状较为特殊, 但是它仍然遵循反Hall-Petch关系.在模拟过程中，侧向应力最大值比拉伸方向应力的最大值滞后出现.位错只会从晶界产生并向晶粒内部传播，晶粒间界滑移是多晶薄膜塑性变形的主要来源. 关键词： 纳米薄膜 变形机理 温度效应 分子动力学     

纳米单晶铜薄膜中孔洞拉伸变形的分子动力学模拟

固体的断裂过程贯通宏、细、微观多个层次尺度，涉及固体力学、材料科学与物理学等领域。细观破坏过程的4种基本构元(孔洞、微裂纹、界面失效、变形局部化等)的起源和演化描述必须在微(纳)观尺度才能完全阐明。从原子尺度运用分子动力学技术模拟纳米单晶铜薄膜中孔洞在拉伸作用下的力学行为和动态断裂过程。     

超纳米金刚石薄膜结构相变的第一原理分子动力学研究

纳米金刚石薄膜的结构相变非常复杂,对稳定性和物理性质又尤为重要。本文用第一性原理分子动力学模拟研究了超纳米金刚石薄膜的结构相变和表面重构。研究发现,纳米金刚石的表面碳团簇通过断开（111）面的σ键,形成具有碳六元环结构的石墨碎片;内部原子sp3杂化向sp2杂化转化的发生是从（111）面上成对C原子向石墨相转化时形成π键的过程中获得了能量,驱动石墨的转变由表层向心部逐渐进行。转变过程中存在一种洋葱状富勒烯和金刚石结构共存的过渡相——Bucky-diamond,表面悬空键的消除和表层的富勒烯外壳最大限度地降低了表面能和系统总能量,Bucky-Diamond结构稳定存在。     

Au纳米薄膜的熔化机理及其结构演变的分子动力学模拟

利用分子动力学模拟详细研究了不同厚度的Au纳米薄膜的熔化机理和结构演变. 模拟结果表明所有Au纳米薄膜的熔化行为分为两个阶段,即表面预熔和均相熔化. 只有最外层原子出现了预熔化行为, 其他内层原子在均相熔化之前始终保持稳定的固态,这与零维的Au纳米团簇和一维的Au纳米线的预熔化行为是不同的. 同时Au纳米薄膜的熔化温度随着薄膜厚度的增加而升高. 在预熔化过程中,在原子水平上发现了所有的Au纳米薄膜的f100g晶面向f111g晶面转变的表面重建过程. 对于最薄的L2纳米薄膜,当温度低于500 K 时表面应力不能诱导这样的表面重建. 然而一维的Au纳米线在更低温度下就能够观察到了由表面应力诱导的表面重建过程. 这主要是因为Au纳米线具有更高的比表面积所导致的. 另外研究结果还表明当模拟温度达到某一特定值时,由双原子层组成的Au纳米薄膜能够分裂成一维的纳米线.     

表面黏附导致的接触行为转变

应用大规模分子动力学方法, 模拟了具有不同原子级粗糙形貌的两种刚性球形探头与弹性平面基体的黏附接触行为. 研究了载荷与真实接触面积、接触界面排斥力与真实接触面积, 以及黏附力与真实接触面积之间的关系. 分子模拟得到的载荷与真实接触面积的关系, 与连续力学接触理论预测很好地定性一致. 无论是原子级光滑探头还是粗糙探头, 黏附接触下的排斥力与真实接触面积的关系, 都与无黏附接触时的规律相一致, 即黏附力对接触行为的影响作用, 可以等效为附加在真实外载荷基础上的虚拟载荷, 将对黏附接触行为的分析转变为无黏附接触分析. 两种探头的黏附力随真实接触面积都呈幂函数形式的增长, 但是, 原子级光滑探头的幂指数大于1, 而原子级粗糙探头的幂指数小于1. 关键词： 接触行为 表面黏附 分子动力学模拟     

分子动力学模拟H原子与Si的表面相互作用

通过分子动力学模拟了入射能量对H原子与晶Si表面相互作用的影响. 通过模拟数据与实验数据的比较, 得到H原子吸附率随入射量的增加 呈先增加后趋于平衡的趋势. 沉积的H原子在Si表面形成一层氢化非晶硅薄膜, 刻蚀产物(H₂, SiH₂, SiH₃和SiH₄)对H原子吸附率趋于平衡有重要影响, 并且也决定了样品的表面粗糙度. 当入射能量为1 eV时, 样品表面粗糙度最小. 随着入射能量的增加, 氢化非晶硅薄膜中各成分(SiH, SiH₂, SiH₃)的量以及分布均有所变化. 关键词： 分子动力学 吸附率 表面粗糙度 氢化非晶硅薄膜     

纳米粒子碰撞下的单晶硅表面非晶相变

应用分子动力学模拟研究了在纳米粒子的碰撞作用下，单晶硅表面局部区域的物相转变和结构演变. 模拟表明在碰撞过程中，基体表面碰撞区域从初始的单晶体转变为熔融态，经历过冷液体状态之后凝固成为了非晶态. 模拟揭示的凝固转变温度与硅玻璃化温度很接近. 在颗粒反弹阶段，与发生的冷却过程和压力去除过程相一致，碰撞区域从瞬态的、高度无序、高度致密的过冷状态开始，经历了结构有序度的增加和向相对疏松状态的转变. 碰撞之后所得非晶硅的平均配位数为5.27，其中配位数5，6原子构成了碰撞区域原子总数的61.5%.     

金刚石表面无定形碳氢薄膜生长的分子动力学模拟

利用分子动力学模拟方法研究了CH₂基团轰击金刚石(111)面所形成的无定形碳氢薄膜(a-C:H)的生长过程. 结构分析表明, 得到的无定形碳氢薄膜中碳原子的局域结构(如C–C第一近邻数)与其中氢原子的含量密切相关. CH₂ 基团入射能量的增加会导致得到的薄膜的氢含量降低, 从而改变薄膜中类sp³成键碳原子的比例.     

Au/Cu(001)异质外延岛演化的分子动力学研究

利用分子动力学弛豫方法模拟了Au/Cu(001)异质外延生长初期Au异质外延岛的形貌演化，分析了Au外延岛演化过程中的局域应力及与基体结合能随表面岛尺寸的变化. 研究结果表明：当异质外延岛小于7×7时，外延岛原子分布呈现赝Cu点阵形貌；当外延岛达到8×8后，外延岛内开始出现失配位错，失配位错数量随外延岛尺寸的增加而增加. 局域压力分析指出，外延岛上原子之间的近邻环境不同导致了所受应力的差异，而外延岛的形变则是由外延岛原子的应力分布所决定. 研究还发现，失配位错的产生导致错位原子与基体原子之间的结合强度减弱，但相对增加了非错位原子与基体原子之间的结合强度. 关键词： 异质外延 表面形貌 局域压力 分子动力学模拟     

承压类特种设备用钢光谱分析

对类型标准化样品、环境温度、环境湿度、样品表面温度、样品表面粗糙度等影响光谱分析准确度的因素进行了研究,提出了类型标准化样品需选择其各元素含量与分析样品的各元素含量尽量接近,并保证分析环境与漂移校正、类型标准化校正的环境一致的前提下,通过控制分析样品的表面温度、粗糙度,可以明显提高光谱分析的准确度.     

Investigating the lateral motion of SiGe islands by selective chemical etching

SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over Si_xGe_1−x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing.     

Observation and investigation of graphite superlattice boundaries by scanning tunneling microscopy

In this article, we report on scanning tunneling microscopy (STM) observations of several different kinds of superlattice boundaries on highly-oriented pyrolytic graphite (HOPG) including an array of bead-like structures, a monolayer deep trench, a zig-zag shaped termination, and a plain boundary without features. Results of a simulation model show that a top rotated graphite layer with a straight boundary does not necessarily lead to the zig-zag shaped boundary of the resulting superlattice as has been previously claimed. The formation of the bead-like, trench, and zig-zag shaped boundaries is explained from the energetic point of view. Our study also shows evidence for the superlattice-mediated observation of a low-angle grain boundary with a varying tilt angle. A relationship between the periodicity of the boundary dislocations and the periodicity of the superlattice across the boundary is derived. The result of this work is important for an understanding of superlattices on graphite whose origin is not yet completely understood.     

Structural and dynamical properties of iridium surfaces: First principles and molecular dynamics investigations

The structural and dynamical properties of Ir(1 0 0) clean surface are investigated in the temperature range 100-1100 K. We performed molecular dynamics (MD) simulations using the interaction potential energies obtained from the density-functional theory (DFT) and plane-wave pseudopotential (PWPP) method. The obtained contraction of the first interlayer distance, d₁₂ , decreases from −4.94% at 100 K to −4.84% at 1100 K. This decrease deviates by 11.8% at 100 K to 13.6% at 1100 K, from that at 0 K (−5.6%). The expansion of the second interlayer distance, d₂₃, however increases from 0.89% at 100 K to 1% at 1100 K, causing a deviation that ranges from −11% to 0% from that at 0 K (1%). The deviation of the calculated surface vibrational frequencies and surface relaxations over the entire range of temperatures (100-1100 K) is rather modest as a result of small anharmonic effects of the surface.     

Surface and bulk properties of ballistic deposition models with bond breaking

We introduce a new class of growth models, with a surface restructuring mechanism in which impinging particles may dislodge suspended particles, previously aggregated on the same column in the deposit. The flux of these particles is controlled through a probability p$p$. These systems present a crossover, for small values of p$p$, from random to correlated (KPZ) growth of surface roughness, which is studied through scaling arguments and Monte Carlo simulations on one- and two-dimensional substrates. We show that the crossover characteristic time _t×$t_{\times }$ scales with p$p$ according to _t×∼p^−y$t_{\times }\sim p^{-y}$ with y=(n+1)$y=(n+1)$ and that the interface width at saturation _Wsat$W_{sat}$ scales as _Wsat∼p^−δ$W_{sat}\sim p^{-\delta }$ with δ=(n+1)/2$\delta =(n+1)/2$, where n$n$ is either the maximal number of broken bonds or of dislodged suspended particles. This result shows that the sets of exponents y=1$y=1$ and δ=1/2$\delta =1/2$ or y=2$y=2$ and δ=1$\delta =1$ found in all previous works focusing on systems with this same type of crossover are not universal. Using scaling arguments, we show that the bulk porosity P$P$ of the deposits scales as P∼p^y−δ$P\sim p^{y-\delta }$ for small values of p$p$. This general scaling relation is confirmed by our numerical simulations and explains previous results present in literature.     

Surface alloying and anomalous diffusion of Bi on Cu(1 1 1)

We have used Low-Energy Electron Microscopy (LEEM) to study the formation and structure of the surface alloy of Bi on the Cu(1 1 1) surface. As a function of Bi coverage we find a progression from a dilute surface alloy to a structure, which coexists with a Bi overlayer when the Bi coverage exceeds 1/3 ML. At a temperature of 401 K, an unusual formation of alloy domains is observed. The origin of this effect is traced down to the mobility of Bi adatoms, which is found to strongly depend on the Bi coverage of the surface alloy on which they reside.     

Scanning tunneling microscopy and abinitio studies of precursor states of Ga-induced cluster on Si(0 0 1) surface

The growth processes and structures of Ga layers formed on a Si(0 0 1) surface have been studied by scanning tunneling microscopy (STM) and abinitio calculation. The precursor states of the Ga clusters that compose the Si(0 0 1) 8 × n-Ga (n = 4, 5, 6) structures are observed in addition to the 2 × 2- and 4 × 2-Ga structures at a Ga coverage of 0.55 ML at 300 °C. There are two types of precursor clusters whose protrusions are observed as different shapes in filled-state STM images. We compare the observed STM images with the simulated ones to identify the possible structural models. From the results, we determine the structure of each precursor cluster. On the basis of the results, the formation processes of the cluster are discussed.     

Dynamic and thermodynamic consequences of adsorbate lateral interactions in surface reaction kinetics

The effects of lateral interactions on the two-dimensional distribution of adspecies on solid surfaces and their consequences for reaction kinetics are demonstrated for the bimolecular reactive systemA+BAB. The discussion concentrates on systems where one reactant,A, is stationary while the other,B, is freely diffusing and instantaneously relaxing. A modified Bethe-Peierls-type lattice gas approximation is formulated in order to account for the rapidly-equilibrating distribution ofB atoms. The approximation takes into account all nearest and next nearest neighbor interactions between the adspecies and the nonuniformity of the lattice available toB implied by the presence of immobileA's on the surface. This model is combined with a Monte Carlo simulation of the reactive events in order to calculate reaction rates, e.g., in temperature-programmed processes. The rates are compared with full Monte Carlo simulations (for all kinetic processes), showing good agreement between the two schemes, except at very high coverages, where very long range correlations in the system which are ignored in the lattice gas approximation must be taken into account.This paper is dedicated to Howard Reiss in celebration of his 66th birthday.