共查询到18条相似文献,搜索用时 149 毫秒
1.
采用密度泛函理论与周期性平板模型相结合的方法,对HCOOH在Pd(111)表面top, fcc, hcp, bridge 四个吸附位和Pd-Fe(111)表面Pd-top, Fe-top, PdPd-bridge, PdFe-bridge, FeFe-bridge, Pd2Fe-hcp, PdFe2-hcp, Pd2Fe –fcc, PdFe2-fcc等9个吸附位的13种吸附模型进行了能量计算、构型优化,得到了HCOOH较有利的吸附位;并对清洁表面进行能带分析。结果表明:掺杂Fe后,Pd催化剂对HCOOH催化活性增强;HCOOH在Pd(111)表面的最稳定吸附位fcc的吸附能是-41.8kJ•mol-1,在Pd-Fe(111)表面的最稳定吸附位Pd2Fe-hcp的吸附能是-126.5 kJ•mol-1,而且HCOOH在金属表面属于化学吸附。 相似文献
2.
C_2H_x(x=4~6)在Ni(111)表面吸附的DFT研究 总被引:1,自引:1,他引:0
张福兰 《原子与分子物理学报》2010,27(6):1175-1182
采用密度泛函理论与周期平板模型相结合的方法,对物种C_2H_x(x=4~6)在Ni(111)表面的top,fcc,hcp和bridge位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析.结果表明:C_2H_6和C_2H_4在Ni(111)表面的最稳定吸附位都是top位,吸附能分别是-36.41和-48.62 kJ·mol~(-1),物种与金属表面吸附较弱;而C_2H_5在Ni(111)表面的最稳定吸附位hcp的吸附能是-100.21 kJ·mol~(-1),物种与金属表面较强;三物种与金属表面之间都有电荷转移,属于化学吸附. 相似文献
3.
采用密度泛函理论与周期性平板模型相结合的方法,对CO在Rh(111)表面top、fcc、hcp、bridge四个吸附位和Rh-Pd(111)表面Rh-top、Pd-top、Rh Rh-bridge、Rh Pd-bridge、Pd Pd-bridge、Rh2Pdhcp、Rh Pd2-hcp、Rh2Pd-fcc、Rh Pd2-fcc九个吸附位的13种吸附模型进行了构型优化、能量计算,得到了CO较有利的吸附位;并对最佳吸附位进行总态密度分析.结果表明:CO在Rh(111)和Rh-Pd(111)表面的最稳定吸附位分别为Rh-hcp和Rh-top位,其吸附能的大小顺序为Ph(111)Rh-Pt(111);CO与金属表面成键,属于化学吸附. 相似文献
4.
N_2在Co掺杂Ru(001)表面吸附的DFT研究 总被引:3,自引:3,他引:0
张福兰 《原子与分子物理学报》2010,27(4):769-774
采用密度泛函理论与周期性平板模型相结合的方法,对N_2在Ru(001)表面top、fcc、hcp、bridge四个吸附位和Ru-Co(001)表面Ru-top、Co-top、Ru(Ru)Ru-bridge、Co(Co)Co-bridge、Ru(Co)Co-bridge、Ru(Ru)Co-bridge、Ru_2Co-hcp、RuCo_2-hcp、Ru_2Co-fcc、RuCo_2-fcc十个吸附位的14种吸附模型进行了构型优化、能量计算,得到了N_2较有利的吸附位;并对清洁表面进行能带分析,对最佳吸附位进行总态密度分析.结果表明:掺杂Co后,Ru催化剂的能带变宽,催化活性增强;N_2在Ru(001)表面的最稳定吸附位top的吸附能是-88.94 kJ·mol~(-1),在Ru-Co(001)表面的最稳定吸附位Ru-top的吸附能是-95.71 kJ·mol~(-1),而且N_2与金属表面成键,属于化学吸附. 相似文献
5.
本文采用第一性原理和周期平板模型相结合的方法,对甲氧基在Ir(111)表面top,bridge,fcc和hcp位的吸附模型进行了构型优化、能量计算、Mulliken电荷布居分析以及差分电荷密度计算.结果表明,甲氧基通过氧原子与金属表面相互作用时,垂直吸附在fcc位是最有利的吸附构型,吸附能为2.26eV,此时电子从金属表面向甲氧基转移.吸附过程中C-O键振动频率发生红移,表明在该表面C-O键容易被活化.结合差分电荷密度分析表明,吸附时CH3O中氧的2p原子轨道和铱的dz2原子轨道相互作用形成σ键. 相似文献
6.
张福兰 《原子与分子物理学报》2011,28(1)
采用密度泛函理论与周期平板模型相结合的方法,对物种CHx(x=2~4)在Fe(110)表面的top,hcp,SB和LB位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析。结果表明:CH4在Fe(110)表面的最稳定吸附位都是SB位,吸附能别是-38.14 kJ•mol-1,CH3在Fe(110)表面的最稳定吸附位都是top位,吸附能别是-171.78 kJ•mol-1,而CH2在Fe(110)表面的最稳定吸附位hcp的吸附能是-342.43 kJ•mol-1;CH3 和CH2两物种与金属表面成键,属于化学吸附。 相似文献
7.
张福兰 《原子与分子物理学报》2010,27(5):986-992
采用密度泛函理论与周期平板模型相结合的方法,对物种CHx(x=2~4)在Fe(110)表面的top,hcp,SB和LB位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析。结果表明:CH4在Fe(110)表面的最稳定吸附位都是SB位,吸附能别是-38.14 kJ•mol-1,CH3在Fe(110)表面的最稳定吸附位都是top位,吸附能别是-171.78 kJ•mol-1,而CH2在Fe(110)表面的最稳定吸附位hcp的吸附能是-342.43 kJ•mol-1;CH3 和CH2两物种与金属表面成键,属于化学吸附。 相似文献
8.
应用密度泛函理论,本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度,给出了覆盖度从0.11ML到1.0ML的范围内,O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位,O在fcc洞位的吸附能对覆盖度比较敏感,其值随着覆盖度的增加而减小;O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系,原因是Au表面电子向O偏移,形成表面偶极子;O—Au的相互作用形成成键态和反键态,且反键态都被占据,造成O—Au键很弱,O吸附能较小.
关键词:
表面吸附
Au(111)表面
密度泛函理论
电子特性 相似文献
9.
在密度泛函理论耦合超软贋势第一性原理的平台上,研究了甲烷在Si(111)表面的物理吸附特性.通过建立硅晶胞的不同吸附位置(top、bridge、fcc)模型,对比分析了甲烷在相应位置吸附界面变化的键结构、吸附能和态密度,获得了相应吸附点的吸附特征.对比分析的结果表明,甲烷只有在fcc位置物理吸附状态较为理想.分析态密度、键长及键角等数据揭示fcc位甲烷吸附对体系硅晶胞有很大的影响,其体系的键能最低,即此时体系结构最稳定.本文所得研究成果可用于Si表面对甲烷气体的敏感性分析及气体传感器领域. 相似文献
10.
应用密度泛函理论,系统研究了Al原子在Pt(111),Ir(111)和Au(111)表面的桥位、顶位、三重面心立方(fcc)洞位和六角密排(hcp)洞位这四个典型位置的吸附情况. 主要计算了三吸附体系的几何结构、平均结合能和差分电荷密度,并系统讨论了相关原子的密立根电荷布居数和投影态密度.研究发现,对于Pt(111)和Ir(111)表面,Al原子在hcp洞位最稳定,但是对于Au(111)表面,Al原子在fcc洞位最稳定.
关键词:
吸附
密度泛函理论
结合能
电子结构 相似文献
11.
FOURIER ANALYSIS OF TEMPORAL AND SPATIAL OSCILLATIONS OF TUNNELING CURRENT IN SCANNING TUNNELING MICROSCOPY
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Partially oxidized Si(111) surfaces and surfaces of highly oriented pyrolytic graphite (HOPG) were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) systems and by an STM system working under ambient conditions, respectively. The STM current images of partially oxidized Si(111) surfaces and HOPG surfaces were analyzed by one/two-dimensional fast Fourier transformation (1D-FFT/2D-FFT). The phenomenon of temporal oscillations of tunneling current on the partially oxidized Si(111) surfaces was detected with both UHV-STM systems. Temporal as well as spatial oscillations of tunneling current appeared in highly resolved STM current images of the Si(111) surfaces simultaneously, but both kinds of oscillations could be discriminated according to their different influence on the 2D-FFT spectra of the current images, while varying the scanning range and rate. On clean HOPG surfaces only spatial oscillations of tunneling current induced by the surface structure were observed. 相似文献
12.
Shuji Hasegawa Yasuyoshi Nagai Toshio Oonishi Nobuhiko Kobayashi Takashi Miyake Shuuichi Murakami 《Phase Transitions》2013,86(2-4):87-114
Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7 1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au) 1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au 1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7 1×1 and 5×2-Au 1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity. 相似文献
13.
利用LP-MOCVD在Si(111)衬底上,以高温AIN为缓冲层,分别用低温GaN(LT-GaN)和偏离化学计量比富Ga高温GaN(HT-GaN)为过渡层外延生长六方相GaN薄膜。采用高分辨率双晶X射线衍射(DCXRD),扫描电子显微镜(SEM),原子力显微镜(AFM)和室温光致荧光光谱(RT-PL)进行分析。结果表明,有偏离化学计量比富Ga HT-GaN为过渡层生长的GaN薄膜质量和光致荧光特性均明显优于以LT-GaN为过渡层生长的GaN薄膜,得到GaN(0002)和(1012)的DCXRD峰,其半峰全宽(FWHM)分别为698s和842s,室温下的光致荧光光谱在361nm处有一个很强的发光峰,其半峰全宽为44.3meV。 相似文献
14.
利用Brenner(#2)半经验多体相互作用势和分子动力学模拟方法研究荷能的C2在金刚石(111)表面的化学吸附过程.模拟300 K时,初始入射动能分别为1,20,30 eV的C2团簇从6个不同位置轰击金刚石(111)表面,观察到C2团簇在金刚石(111)表面形成的吸附结构,表面C原子键的打开以及C2团簇与表面C原子成键等物理过程,并讨论不同入射位置和入射能量对沉积团簇的结构特性的影响.结果表明,对于表面不同的局部构型,C2团簇发生不同的碰撞过程,C2团簇入射能量的提高有利于成键过程的发生,从原子尺度模拟沉积机制. 相似文献
15.
为什么水在金属表面的吸附构型是倾斜的——水在铜、铝表面吸附的量子化学计算 总被引:1,自引:0,他引:1
用量子化学从头算方法,分别以原子簇Cu5、Al4、Al10模拟Cu(100)和Al(111)表面,在不同基组水平上,计算了水在两种金属表面上倾斜吸附的热能面,结果表明:当计算基组中不含氧原子的d轨道时,得到水分子在金属垂直吸附的构型,这与实验结果不符;当水中氧原子加极化函数时,水分子倾斜吸附时能量较低,得到与实验相符的吸附构型。这说明水中氧原子d轨道在计算中起着关键作用,在成键过程中有着重要影响。 相似文献
16.
A density-functional theory investigation on disorption of O2 on Sn(111) and its comparison with initial oxidation on the X(111) (X=Si,Ge, Sn,Pb) surfaces
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The first-principles calculations are performed to investigate the adsorption of O2 molecules on an Sn(111) 2×2 surface. The chemisorbed adsorption precursor states for O2 are identified to be along the parallel and vertical channels, and the surface reconstructions of Sn(111) induced by oxygen adsorption are studied. Based on this, the adsorption behaviours of O2 on X(111) (X=Si, Ge, Sn, Pb) surfaces are analysed, and the most stable adsorption channels of O2 on X(111) (X=Si, Ge, Sn, Pb) are identified. The surface reconstructions and electron distributions along the most stable adsorption channels are discussed and compared. The results show that the O2 adsorption ability declines gradually and the amount of charge transferred decreases with the enhancement of metallicity. 相似文献
17.