Line emission from semiconductive CdS single crystals

When a pulse voltage of sufficient width is applied to a semiconductive CdS bar, a large increase in the electric current occurs with an intense light emission. The dominant part of this emission spectrum consists of Cd(I) atomic lines.     

Laser properties of praseodymium pentaphosphate single crystals

PrP₅O₁₄, Pr_xLa_1−xP₅O₁₄, and Pr_xY_1−xP₅O₁₄ (0≦x≦1) single crystals of laser quality were synthesized and their crystallographic and optical parameters measured. Laser emissions in the visible (λ=637.4 nm) with no mirrors in place (superradiance) and also in various optical resonators have been observed.     

Blue emission in Ti-sapphire laser crystals

The time resolved emission spectrum of the blue band of Ti:sapphire laser crystal has been investigated as a function of temperature (range 10–290 K) and UV (266 nm) laser excitation intensity. Two blue emission bands, centred at 420 nm and 460 nm, have been detected. The 420 nm band is attributed to Ti⁴⁺ centres whereas the 460 nm one is proposed to be due to Ti³⁺ ions. The evolution of the emission spectrum vs the UV excitation intensity has shown that the concentration of Ti⁴⁺ centres is increased under UV irradiation at the cost of the centres responsible for the 460 nm band.     

Field emission from a metal covered with a semiconducting layer: A model calculation

The electron field emission from a metal covered with a thin layer of a semiconductor with electron affinity and dielectric constant is considered. The model takes into account the metal-semiconductor (Schottky) barrier of height _b, the conduction current inside the semiconductor, and the band bending at the semiconductor-vacuum interface due to the external field penetration. For thick films under moderately high electric fields, the metal-semiconductor interface does not influence the emission behaviour whereas for thin films, the interface plays an important role, depending on the barrier heights. In particular, for /_b<^2/3 the I–V characteristics will, for strong fields, be dominated by the field emission process at the interface. In such cases important deviations from Fowler-Nordheim behaviour are found.     

Light emission from silicon nanocrystals: Probing a single quantum dot

Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a ∼6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a ∼60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.     

On the yellow-band emission in CdS films

CdS polycrystalline thin films were prepared by the chemical bath deposition (CBD) method on glass substrates. X-ray diffraction (XRD) studies show that the films grow in the cubic zinc-blende crystalline phase. Upon thermal annealing (TA) in Ar+S₂ flux at normal pressure in the temperature range 240–510 °C, the evolution of the transformation into the hexagonal wurtzite phase is observed. This hexagonal crystalline structure is the stable phase. From XRD diagrams the phase transition can be appreciated to occur upon TA at approximately 300 °C. Photoluminescence (PL) data prove that the green-emission band is present for well-defined phases – cubic or hexagonal ones. A second band located at 2.2 eV appears for samples near the transition region. This band at 2.2 eV, called the yellow band, has already been reported to be associated with interstitial Cd atoms. A model for this yellow-band-mechanism formation, arising during the phase transformation, has been proposed based on Frenkel-pair creation. Received: 27 June 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001     

Cathodic needle growth from Mo(CO)6 and Cr(CO)6 vapors at lower electric fields

A cathodic needle growth which is possibly associated with the temperature-field (T-F) electron emission is described. Experimental data disclosed that densely populated needle crystals exhibiting a dendritic configuration growth at the tip area of a pointed cathode when it is operated in an Mo(CO)₆ or Cr(CO)₆ atmosphere at a field strength just insufficient to draw field electrons. The needle growth occurs always at elevated temperatures of ∼600–∼700 K, indicating that it is triggered by T-F electrons emitted from the cathode tip. Needle crystals produced are not single crystals but composed of linearly packed micro-crystals, and those crystals obtainable from Mo(CO)₆ are a face-centered cubic phase of Mo₂C. Needles arising from Cr(CO)₆ have not been identified, but they are believed to be an unknown phase of chromium carbide.     

Optical spectroscopy of Cr3+ ions in LiF single crystals

This paper reports on the luminescence spectrum, its excitation-wavelength dependence and decaytime of Cr³⁺:LiF crystals. In contrast to Al₂O₃ and MgO, where the Cr³⁺ luminescence at low temperature is due to the R-line and its vibronic sideband, luminescence from Cr³⁺:LiF is assigned to the broad-band ⁴ T ₂⁴ A ₂ transition. A periodic structure in the vibronic sidebands of this transition occurs with energy separations of ca. 60 meV. The linear polarisation of the vibronic sidebands shows that their radiative transition takes place from the lowest excited level of the ⁴ T ₂ state, i.e. ⁴ B ₁, into the ⁴ A ₂ ground state of Cr³⁺ ions in orthorhombic symmetry sites. The crystal-field parameters calculated from the experimental data, and luminescence decay-time of the two polarized configurations of the ⁴ B ₁(⁴ T ₂)⁴ A ₂ transition are also reported.     

Strong blue excitonic emission from CdS nanocrystallites prepared by LB technique

CdS nanocrystallites formed in ordered fatty acid LB multilayers exhibited strong surface states emission ∼550 nm and weak excitonic emission ∼400 nm. Treatment with aqueous CdCl₂ resulted in the suppression of surface states emission and enhancement of the blue excitonic emission. Subsequent annealing in air at 200°C caused an order of magnitude enhancement of excitonic emission. The growth of nanocrystallites during annealing as seen from the red-shift of excitonic absorption and emission is suppressed by the CdCl₂ treatment. The hindered growth of nanocrystallites, the significant enhancement of excitonic emission from CdS, and the suppression of surface states emission are attributed to surface passivation of CdS nanocrystallites by surface oxide formation.     

Crystalline structure and optical spectroscopy of Er3+-doped KGd(WO4)2 single crystals

4 )₂ single crystals doped with Er³⁺ have been grown by the flux top-seeded-solution growth method. The crystallographic structure of the lattice has been refined, being the lattice constants a=10.652(4), b=10.374(6), c=7.582(2) Å, β=130.80(2)°. The refractive index dispersion of the host has been measured in the 350–1500 nm range. The optical absorption and photoluminescence properties of Er³⁺ have been characterised in the 5–300 K temperature range. At 5 K, the absorption and emission bands show the (2J+1)/2 multiplet splittings expected for the C₂ symmetry site of Er in the Gd site. The energy positions and halfwidths of the 72 sublevels observed have been tabulated as well as the cross sections of the different multiplets. Six emission band sets have been observed under excitation of the ⁴F_7/2 multiplet. The Judd–Ofelt (JO) parameters of Er³⁺ in KGW have been calculated: Ω₂=8.90×10^-20 cm², Ω₄=0.96×10^-20 cm², Ω₆=0.82×10^-20 cm². Lifetimes of the ⁴S_3/2, ⁴F_9/2, and ⁴I_11/2 multiplets have been measured in the 5–300 K range of temperature and compared with those calculated from the JO theory. A reduction of the ⁴S_3/2 and ⁴I_11/2 measured lifetimes with increasing erbium concentration has been observed, moreover the presence of multiphonon non-radiative processes is inferred from the temperature dependence of the lifetimes. Received: 15 December 1997/Revised version: 10 July 1998     

Optical study of anthracene molecules doped in fluorene single crystals

Properties of two luminescence centers, which are observed in anthracene-doped fluorene crystal as concentration increases, have been investigated to clarify their origin. Excitation spectra and concentration dependence of absorption spectra were measured and two types of luminescence are attributed to anthracene molecule pair centers with weak and strong interaction. Dipole-dipole interactions between two anthracence molecules of various configurations are estimated and possible configuration for two types of luminescence is proposed.     

Photoluminescence of the ZnSe single crystals doped by thermal diffusion of nitrogen

Photoluminescence (PL) spectra of ZnSe single crystals annealed in different ambients containing molecular nitrogen are investigated. The compensating activity of N impurity in n-ZnSe crystals is shown. It is caused by the formation of N_Se acceptor centers, having 101-108 meV activation energy. The intensity of amplification of both long-wave luminescence spectra bands and the edge luminescence spectra bands caused by the presence of nitrogen in annealing medium is investigated. The presented results allow one to assign the long-wave luminescence to deep acceptors caused by uncontrollable impurities, and the relevant bands of the edge luminescence spectra to the excitons bound with the same deep acceptors. The model explaining the transformations of the luminescent properties of ZnSe crystals by means of nitrogen impurity doping is proposed. The model considers the presence of donors having 75 meV activation energy, acceptors having 220-720 meV activation energy and centers having levels localized near the middle of the band gap.     

Luminescence from Ti2+ ions in LiF crystals

Luminescence of Ti²⁺: LiF crystals in the wavelength range 650–900 nm excited using laser radiation is reported. The values of 10Dq and the Racah B parameter obtained from the present results indicate that in LiF the ¹ E, ¹ T ₂, and ³ T ₂ energy levels are almost at the cross-over point in the Tanabe-Sugano diagram. In consequence photoluminescence from all three energy levels to the ground state is observed. At low temperature (T 14 K) the emission is mainly due to sharp emission lines with weak vibronic structure due to the ¹ E, ¹ T ₂³ T ₁ transitions of Ti²⁺ ions. The ³ T ₂³ T ₁ broad-band emission is weak at low temperature, becoming stronger at 300 K due to a phonon-assisted tunnelling process, similar to that observed in Cr³⁺: garnets [1]. The excitation spectrum of these lines is a broad peak at 590 nm due to absorption in the ³ T ₁³ T ₂ transition.     

Anomalous electron emission from lithium niobate and lithium tantalate single crystals

Anomalous electron emission from the surface of LiNbO₃ and LiTaO₃ single crystals excited by soft x radiation has been discovered and is investigated. The absence of anomalous emission from the face of these single crystals is established. The experimental results confirm the theoretical conclusions that the anomalous emission is caused by the presence of a maximum in the distribution of the potential in the near-surface layer. The dependence of the lifetime τ of the anomalous emission on the dielectric constant ɛ of the ferroelectric is calculated. Fiz. Tverd. Tela (St. Petersburg) 39, 679–682 (April 1997)     

An optical spectroscopy study of defects in lithium tantalate single crystals

The congruent, stoichiometric, and Mg doped stoichiometric LiTaO₃ single crystals have been successfully grown by the Czochralski technique. The evolution of defect structures caused by varying composition and post-growth processing has been evaluated from the optical absorption and photoluminescence measurements. Optical absorption studies showed that the UV absorption edge is very sensitive to the composition of LiTaO₃ crystals. Photoluminescence of various LiTaO₃ single crystals at room temperature was observed. The emission bands centered at 360, 430, and 530 nm were assigned to different defects, which can well show the defect information in LiTaO₃ crystals.     

Short-wavelength luminescence in Ho-doped KGd(WO4)2 crystals

Emissions from the high-lying excited states, energy transfer and upconversion processes are investigated in Ho³⁺-activated KGd(WO₄)₂ crystal. The spectral assignment based on time-resolved emission spectra allowed to identify various near ultra-violet (UV), blue and green emissions starting from the excited ³H₅, ⁵G₄, ⁵G₅, ⁵F₃ and ⁵S₂ levels. The temporal behavior of these transitions after pulsed excitation was analyzed as a function of temperature and holmium ions concentration. The shortening and nonexponentiality of the decays, observed with increasing activator concentrations, indicated cross-relaxation (CR) among the Ho³⁺ ions. Cross-relaxation rates were experimentally determined as a function of activator concentration and used to evaluate the values of the nearest-neighbor trapping rates X₀₁ and to model the decays. It was observed that KGW, despite higher than in YAG maximum phonon energy of about 900 cm⁻¹, is more efficient short-wavelength emitter than YAG. Examples of the excited-state absorption (ESA) and energy transfer (ET) mechanisms responsible for the upconverted, short-wavelength emissions were identified by analyzing fluorescence dynamics and possible energy resonances.     

Photoelectron emission from Mg(OH)2 single crystals in the valence band region

The x-ray stimulated photoelectron emission from a) the (10$\text{1}$0) and b) the (0001) surface of Mg(OH)₂ single crystals was studied. A marked anisotropy was observed in the valence band region. For a) three maxima were found at 4.6, 8.8 and 12.0 eV which can be assigned to the T_1u, E_g and A_1g states respectively, if regular O_h symmetry is assumed for the ligand field. For b) the A_1g band disappears which is attribu to the fact that in Mg(OH)₂ the octahedral symmetry is reduced to D_3d by the special orientation of the OH dipoles parallel to the c-axis.     

Localization of nonequilibrium current carriers close to Cr ions in ZnSe:Cr single crystals

The photoluminescence (PL) of Cr-doped ZnSe single crystals is investigated in a temperature interval from 83 up to 297 K and in a wavelengths region from 440 up to 2700 nm. The doping was carried out during a high-temperature annealing of ZnSe crystals in CrSe vapors and in chrome chlorides medium. It is revealed that the doping results in an appearance of both luminescence bands located at 0.54, 0.97, and 2.15 μm and edge luminescence bands located at 454, 457, and 460 nm at 83 K. It is shown that the PL bands located at 457 and 460 nm are caused by the radiative recombination with the participation of holes located on hydrogen-like orbits close to Cr⁺ centers, having a binding energy of 99 meV. The excitons bound with centers responsible for the radiation located at 0.54 μm and having a binding energy of 65-68 meV are considered. The energy of a lattice relaxation at recharge of centers responsible for green radiation is estimated and equals 40-170 meV.     

Temperature-dependent photoluminescence from bicrystalline ZnS (core/shell) nanocables

The experimental study of the temperature-dependent photoluminescence properties of bicrystalline ZnS core/shell nanocables under 10 K to 300 K was reported. The results show that there are two distinct peaks situated at the UV (about 372.6 nm) and green (about 500 nm) regions, respectively, and one blue-shoulder band (about 465 nm) superimposed between them for all spectra. The UV peak shows an obvious redshift with increasing temperature. The analyses of Gaussian-fitted the blue-shoulder band and the green bands from 10 K to 300 K reveal that all spectra can be well fitted by three Gaussian peaks: blue peak (B, about 2.67 eV), two green peaks (G1, about 2.47 eV and G2, about 2.42 eV). With increasing temperature, the blue band shows blueshift. The green bands show anomalous transition: green band G1 shows blueshift-redshift transition and green band G2 shows redshift-blueshift. The origins of these bands and their temperature-dependent shifts are explained based on defect levels and strong carrier localization effect at the defect levels in addition to band-gap shrinkage.