Effect of ion velocity on SHI-induced mixing in Ti/Bi system

Energetic ion beams are proving to be versatile tools for modification and depth profiling of materials. The energy and ion species are the deciding factor in the ion-beam-induced materials modification. Among the various parameters such as electronic energy loss, fluence and heat of mixing, velocity of the ions used for irradiation plays an important role in mixing at the interface. The present study is carried out to find the effect of the velocity of swift heavy ions on interface mixing of a Ti/Bi bilayer system. Ti/Bi/C was deposited on Si substrate at room temperature by an electron gun in a high-vacuum deposition system. Carbon layer is deposited on top to avoid oxidation of the samples. Eighty mega electron volts Au ions and 100?MeV Ag ions with same value of S_e for Ti are used for the irradiation of samples at the fluences 1?×?10¹³–1?×?10¹⁴ ions/cm². Different techniques like Rutherford backscattering spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction were used to characterize the pristine and irradiated samples. The mixing effect is explained in the framework of the thermal spike model. It has been found that the mixing rate is higher for low-velocity Au ions in comparison to high-velocity Ag ions. The result could be explained as due to less energy deposition in thermal spike by high-velocity ions.     

Mixing of Au in Si induced by secondary and high-order recoil implantation

The mixing of Au in Si induced by secondary and high-order recoil implantation was investigated using 350 keV Ar⁺ and 350 keV Kr⁺ ions to fluences from 1?×?10¹⁶ to 3?×?10¹⁶ ions/cm² at room temperature. The thickness of the Au layer evaporated on Si substrate was ～2400 Å.The ranges of the Ar and Kr ions were chosen to be lower than the thickness of the Au layer in order to avoid the ballistic mixing produced by the primary knock-on atoms. Rutherford backscattering spectrometry (RBS) experiments were carried out to study the effects induced by Ar and Kr irradiation at the interface of Au–Si system. We observed that in the case of the irradiation with Ar⁺ ions, a broadening of the Au–Si interface occurred only at the fluence of 3?×?10¹⁶ Ar⁺/cm² and it is attributed to the surface roughening induced by ion bombardment. In contrast, the RBS analysis of a sample irradiated with 2?×?10¹⁶ Kr⁺/cm² clearly showed, in addition to the broadening effect, the formation of a mixed zone of Au and Si atoms at the interface. The mixing of Au in Si atoms can be explained by the secondary and high-order recoil implantation followed by subsequent collision cascades.     

Enhanced electrocatalytic oxidation of hydroxylamine on Pt/polypyrrole composite modified glassy carbon electrode

A sensitive hydroxylamine sensor is developed by electrodeposition of Pt nanoparticles on pre-synthesized polypyrrole nanoparticles modified glassy carbon electrode. The modified electrode presents distinctly electrocatalytic activity toward hydroxylamine oxidation. The kinetic parameters such as the overall numbers of electrons involved in hydroxylamine oxidation, the electron transfer coefficient, standard heterogeneous rate constant, and diffusion coefficient are evaluated. The current response increases linearly with increasing hydroxylamine concentrations and exhibits two wide linear ranges of 5.0?×?10^?7–1.1?×?10^?3 and 1.1?×?10^?3–18.8?×?10^?3 M with a detection limit of 0.08 μM (s/n?=?3). The proposed electrode presents excellent operational and storage ability for determining hydroxylamine. Moreover, the sensor shows good sensitivity, selectivity, and reproducibility properties.     

Low energy electron loss spectroscopic study of Pd-Si(111) system

Effect of Pd deposition on a clean Si(111) surface was studied by ELS and AES methods for submonolayer [1 ML = 7.8 × 10¹⁴atomscm^-2forSi(111)] to several tens of monolayers. ELS spectra showed that the electronic nature of Pd-Si bonding for ? 1 ML of Pd coverage is different from Pd₂Si formed for ? 3 ML. Namely, it was shown that some critical thickness for Pd on Si(111) exist for inducing interfacial intermixing reaction at room temperature.     

The intercalation/deintercalation kinetic studies on the structure-integrated cathode material 0.5Li2MnO3 0.5LiNi0.5Mn0.5O2

A cathode material, 0.5Li₂MnO₃ 0.5LiNi_0.5Mn_0.5O₂, was prepared by citric acid-assisted sol–gel method and its electrochemical performance was investigated. It delivered a charge capacity of 270 mAh g^?1 and a discharge capacity of 189 mAh g^?1 in the first cycle. With the increase of current density from 14 to 28 mA g^?1, the discharge capacity dropped severely to 130 mA g^?1. Obviously, the rate capability of the material was inferior to most of the oxide cathode materials. The diffusion coefficient of this material was calculated to be 6.04?×?10^?12 cm² s^?1 from the results of cyclic voltammetry measurements. Moreover, diffusion coefficients between 3.13?×?10^?12 and 1.22?×?10^?10 cm² s^?1 in the voltage range of 3.8–4.7 V were obtained by capacity intermittent titration technique. This, together with the localized Li₂MnO₃ domains in the crystal structure, may validate the poor rate capability.     

Investigation of energetic ion-induced mixing in Bi/Ge system

The present study is carried out for the investigation of energetic ion beam mixing in the Bi/Ge system, induced by electronic excitation. The system Ge/Bi/C was deposited on Si substrate at room temperature in the high vacuum deposition system and irradiated using Au ions of 120?MeV at the fluences 1?×?10¹³, 5?×?10¹³ and 1?×?10¹⁴?ions/cm². The top layer of carbon was deposited as the protecting layer to avoid oxidation. The swift heavy ions (SHI)-induced interface mixing was studied by Rutherford backscattering spectroscopy (RBS) for depth profiles and compositions, grazing incidence X-ray diffraction (GIXRD) for phase identification and atomic force microscopy (AFM) for surface roughness. We have calculated the mixing rate, mixing efficiency and inter-diffusion coefficient for the Bi/Ge system. We observed that the thickness of the mixed region increased with increasing fluence. In the GIXRD pattern, no new crystalline phase formation was observed after irradiation, the mixed region may be in an amorphous form. The mixing effect is explained in the framework of the thermal spike model.     

LEED study of the epitaxial growth of the thin film Au(111)/Ag(111) system

An analysis of LEED data from the Ag(111) surface at room temperature and 5° ? Θ ? 16°, φ = 12° has been carried out in order to test three different model potentials for the exchange and correlation part of the one-electron LEED potential. Clean Au(111) surfaces have been grown on Ag(111) at room temperature at a deposition rate of 0.15 Å s^?1. Similar method of calculation and potentials have been employed for the Au overlay er on Ag(111). After the deposition of ? 2.5 monolayers of Au/Ag(111) the growth of Au can proceed in two different ways. One of them matches satisfactorily with the theoretical calculation for the Au(111) overlayer on Ag(111) following the fcc sequence. The other seems to be concerned with the diffusion of Ag during the Au growth. Similar curves have been obtained during the diffusion of Ag through 350 Å of Au(111).     

Ramp compression of tantalum to 330 GPa

We report on the stress–density and rate-dependent response for Ta, ramp compressed to 330?GPa with strain rates up to 5?×?10⁸?s^?1. We employ temporally shaped laser drives to compress Ta stepped foils over several to tens of nanoseconds. Lagrangian wave-profile analysis reveals a stress–density relationship which falls below the Hugoniot, above the hydrostat, and is consistent with ramp-compression experiments at lower strain rates. We also report on the peak elastic stress prior to plastic deformation as a function of strain rate for laser-driven ramp and shock-compression data spanning the 1–50?×?10⁷?s^?1 strain-rate range. When combined with previously published lower strain data (10¹–10⁷?s^?1), we observe a change in rate dependence, suggesting a transition from thermally activated to defect-limited (phonon drag) dislocation motion occurring at a strain rate of about 10⁵?s^?1.     

A Study on the Permeability of the Triton X-100 Micelles by Fluorescence Decay Kinetics of Probe Molecules

Abstract

The third armonic (355 nm) of a pulsed Nd-YAG laser has been used to excite pyrene in micellar solutions of Triton X-100. Fluorescence quenching by nitromethane and triethylamine of the excited state of pyrene in Triton X-100 has been studied. Quenching rate constant values of 4.94 ± 0.13 × 10⁸M^?1s^?1 and 1.50 ± 0.04 × 10⁸M^?1s^?1 for deactivation by nitromethane and triethylamine, respectively, have been measured. The values obtained are discussed in terms of the interface permeability.     

Oxygen Diffusion into Multiwalled Carbon Nanotube Doped Polystrene Latex Films Using Fluorescence Technique

This study examines the oxygen diffusion into polystyrene (PS) latex/multiwalled carbon nanotube (MWNT) nanocomposite films (PS/MWNT) consisting of various amounts of MWNT via steady state fluorescence technique (SSF). PS/MWNT films were prepared from the mixture of MWNT and pyrene (P)-labeled PS latexes at various compositions at room temperature. These films were then annealed at 170 °C above glass transition (T_g) temperature of PS. Fluorescence quenching measurements were performed for each film separately to evaluate the effect of MWNT content on oxygen diffusion. The Stern-Volmer equation for fluorescence quenching is combined with Fick’s law for diffusion to derive the mathematical expressions. Diffusion coefficients (D) were produced and found to be increased from 1.1?×?10^?12 to 41?×?10^?12 cm²s^?1 with increasing MWNT content. This increase was explained via the existence of large amounts of pores in composite films which facilitate oxygen penetration into the structure.     

Superior tolerance of Ag/Ni multilayers against Kr ion irradiation: an in situ study

Monolithic Ag and Ni films and Ag/Ni multilayers with individual layer thickness of 5 and 50?nm were subjected to in situ Kr ion irradiation at room temperature to 1 displacement-per-atom (a fluence of 2?×?10¹⁴?ions/cm²). Monolithic Ag has high density of small loops (4?nm in diameter), whereas Ni has fewer but much greater loops (exceeding 20?nm). In comparison, dislocation loops, ～4?nm in diameter, were the major defects in the irradiated Ag/Ni 50?nm film, while the loops were barely observed in the Ag/Ni 5?nm film. At 0.2?dpa (0.4?×?10¹⁴?ions/cm), defect density in both monolithic Ag and Ni saturated at 1.6 and 0.2?×?10²³/m³, compared with 0.8?×?10²³/m³ in Ag/Ni 50?nm multilayer at a saturation fluence of ～1?dpa (2?×?10¹⁴?ions/cm²). Direct observations of frequent loop absorption by layer interfaces suggest that these interfaces are efficient defect sinks. Ag/Ni 5?nm multilayer showed a superior morphological stability against radiation compared to Ag/Ni 50?nm film.     

The influence of strain rate on the visibility of dislocations in transmission electron microscopy images of deformed Ti–6 wt% Al–4 wt% V and in Timet 550

Samples of Ti–6?wt%?Al–4?wt%?V and Timet 550 (Ti–4?wt%?Al–4?wt%?Mo–2?wt%?Sn–0.5?wt%?Si) have been subjected to strain rates between 10^?1 and 10³?s^?1and detailed examination of the dislocation structure in the α grains has been carried out using transmission electron microscopy (TEM). For samples deformed to a strain of 0.1 at 10^?1?s^?1, detailed analysis of the defects can be carried out using all diffracting vectors and the presence of (c +?a) dislocations and a dislocations thus confirmed. In contrast, for samples strained to the same strain of 0.1 but at 5?s^?1, it is not possible to obtain images of dislocations when using any diffracting vectors other than 0002. Thus the presence of dislocations which have a Burgers vector containing a c component can be confirmed in the samples strained at 5?s^?1 but the presence of a-component dislocations can only be inferred from TEM of these samples because of the difficulty of obtaining images with diffracting vectors other than 0002. Limited observations on samples strained at 10³?s^?1 show that similar difficulties are found in imaging dislocations as are found in samples deformed at 5?s^?1 but at this strain rate, the highest used, the difficulties are reduced since images can be obtained in some grains using diffracting vectors other than 0002. These results are discussed in terms of the nature of damage as a function of strain rate and the factors that influence contrast from dislocations in crystals.     

A study of the α ↔ γ transformation in pure iron: rate variations revealed by means of thermal analysis

The α???γ transformation in nominally high purity Fe is shown to occur with a stepped peak in differential thermal analysis on both heating and cooling at rates between 0.5?K?min^?1 and 10?K?min^?1. The composite peaks mark changes in the transformation rate. To endorse the findings, the instrumental output has been thoroughly analyzed providing evaluations of time lags, suggestions for calibration and for the use of the derivative of the peak. The change in rate occurred in all samples irrespective of their grain size (average values from 91?µm to 1100?µm). The rate of movement of the interface in the α???γ transformation is estimated between 4?×?10^?5?m?s^?1 and 3?×?10^?6?m?s^?1. The present results extend previous dilatometric work in which the rate variation was detected only for large grain size and low undercooling. Possible reasons for the variation in rate are outlined: local development of strain in the austenite due to lattice misfit with respect of the growing ferrite, formation of a ragged microstructure and pinning of the boundaries by impurity.     

Li+ transportation kinetics of FeF3 · 0.33H2O/C nanocomposite synthesized by one-step solid state method

A new cathode material for lithium ion battery FeF₃?·?0.33H₂O/C was synthesized successfully by a simple one-step chemico-mechanical method. It showed a noticeable initial discharge capacity of 233.9 mAh g^?1 and corresponding charge capacity of 186.4 mAh g^?1. A reversible capacity of ca.157.4 mAh g^?1 at 20 mA g^?1 can be obtained after 50 charge/discharge cycles. To elucidate the lithium ion transportation in the cathode material, the methods of electrochemical impedance spectroscopy (EIS) and galvanostatic intermittent titration technique (GITT) were applied to obtain the lithium diffusion coefficients of the material. Within the voltage level of 2.05–3.18 V, the method of EIS showed that \( {D}_{{\mathrm{Li}}^{+}} \) varied in the range of 1.2?×?10^?13?~?3.6?×?10^?14 cm² s^?1 with a maximum of 1.2?×?10^?13 cm² s^?1 at 2.5 V. The method of GITT gave a result of 8.1?×?10^?14?~?1.2?×?10^?15 cm² s^?1. The way and the range of the variation for lithium ion diffusion coefficients measured by the GITT method show close similarity with those obtained by the EIS method. Besides, they both reached their maximum at a voltage level of 2.5 V.     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts

We present the results of a surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts. Films 0.2–0.4 μm in thickness were synthesized in vacuum by means of thermal deposition of the parent substances at a pressure of 5 × 10^?4?1 × 10^?3 Pa and a deposition rate of 3 × 10^?3 μm s^?1 (for NaNd(FOD)₄ films, the deposition rate was 8 × 10^?2 μm s^?1). The microstructure of films depends on the deposition conditions. The films of [NaNd(PTFA)₄] and [NaNd(FOD)₄] complexes and Ln(PTFA)₃ · S₁ adducts have an amorphous structure. The [NaNd(PTFA)₄(Phen)] and Nd(PTFA)₃ · S₂ films are characterized by a more ordered polycrystalline structure with the grain size ranging from 0.2 to 1.5 μm.     

Diffusion of chromium and manganese in γ-TiAl

The γ-TiAl intermetallic compound with suitable alloying additions has shown considerable promise as a material for high-temperature applications. Diffusion studies in this alloy system are useful in assessment of their creep behaviour and structural stability in service conditions. Tracer diffusion coefficients of ⁵¹Cr and ⁵⁴Mn in a γ-TiAl intermetallic compound containing 54.1 at. % aluminium were determined in the temperature range from 1095 to 1470?K. The temperature dependence of both the diffusing species follows a linear Arrhenius behaviour and can be expressed as D _Cr?=?4.4?×?10^?3exp(?350?kJ?mol^?1/RT)?m^2?s^?1 and D _Mn?=?1.2?×?10^?3?×exp(?326?kJ?mol^?1/RT)?m^2?s^?1. The data are analysed on the basis of empirical correlations between the diffusion and melting parameters applicable for conventional mono-vacancy diffusion mechanism in metals. It is concluded that impurity diffusion in γ-TiAl occurs through the migration of thermal vacancies via nearest-neighbour or next-nearest neighbour jumps.     

The gas phase oxidation of HCOOH by Cl and NH2 radicals. Proton coupled electron transfer versus hydrogen atom transfer*

ABSTRACT

The reaction of formic acid (HCOOH) with chlorine atom and amidogen radical (NH₂) have been investigated using high level theoretical methods such BH&HLYP, MP2, QCISD, and CCSD(T) with the 6–311?+?G(2df,2p), aug-cc-pVTZ, aug-cc-pVQZ and extrapolation to CBS basis sets. The abstraction of the acidic and formyl hydrogen atoms of the acid by the two radicals has been considered, and the different reactions proceed either by a proton coupled electron transfer (pcet) and hydrogen atom transfer (hat) mechanisms. Our calculated rate constant at 298?K for the reaction with Cl is 1.14?×?10^?13?cm³?molecule^?1?s^?1 in good agreement with the experimental value 1.8?±?0.12/2.0?×?10^?13?cm³?molecule^?1?s^?1 and the reaction proceeds exclusively by abstraction of the formyl hydrogen atom, via hat mechanism, producing HOCO+ClH. The calculated rate constant, at 298?K, for the reaction with NH₂ is 1.71?×?10^?15?cm³?molecule^?1?s^?1, and the reaction goes through the abstraction of the acidic hydrogen atom, via a pcet mechanism, leading to the formation of HCOO+NH₃.     

Formation and magnetic properties of the silicon-cobalt interface

Formation of the Si/Co interface and its magnetic properties have been studied by high-resolution photoelectron spectroscopy with synchrotron radiation. The experiments have been performed in situ in superhigh vacuum (5 × 10^?10 Torr) with coating thicknesses up to 2 nm. It has been found that, in the initial stage of silicon deposition on the surface of polycrystalline cobalt maintained at room temperature, ultrathin layers of the Co₃Si, Co₂Si, CoSi, and CoSi₂ silicides are formed. The three last phases are nonmagnetic, and their formation gives rise to fast decay of magnetic linear dichroism in photoemission of Co 3p electrons. At deposition doses in excess of ～0.4 nm Si, a film of amorphous silicon grows on the sample surface. It has been established that the Si/Co interphase boundary is stable at temperatures up to ～250°C and that further heating of the sample brings about escape of amorphous silicon from the sample surface and initiates processes involving silicide formation.