N23-core losses and autoionization emissions of clean and oxygen exposed zirconium

The electron energy loss spectra associated with N₂₃-excitation and the low energy N₂₃VV Auger emission have been studied for both the clean and oxygen exposed zirconium. In the high energy side of the N₂₃VV Auger spectrum, autoionization emission of electrons of the valence band due to the decay of 4p electrons excited to states ≈9eV above the Fermi level has been identified. The excitation process can be also observed in the electron energy loss spectra. This is the first time that an autoionization feature is observed in a electron excited Auger spectrum of a 4d transition metal.     

Electron energy loss spectra and X-ray photoelectron spectra of Ca2V2O7

We have measured the electron energy loss spectra of Ca₂V₂O₇ in the reflexion mode, at incident energies between 200 and 2400 eV, and the X-ray photoelectron spectra excited by Al K α radiation. The abundant loss structures observed can be correlated with the possible interband transitions, collective oscillations, and excitation of O2s and V3p electrons within the V₂O₇^4- ion. The gap width and molecular orbital (MO) spread (or splitting) is about l eV larger in the V₂O₇^4- ion than in its component VO₄^3- ion. Excitation of O2s states, which may occur together with some MO over-gap transitions, displaces the collective oscillations about 7 eV towards lower energies. Deeper V3p electrons are excited with a maximum energy loss some 7 eV above their binding energy. Cross transitions from Ca3p levels into some empty states of the V₂O₇^4- ion, or direct transitions to available states of the Ca²⁺ ion could not be unambiguously identified. The energy dependence of the excitation cross section and of the electron penetration depth results in a significant variation of the relative intensity of various losses over the investigated energy range.     

Effect of surface excitations on the reflection electron energy loss spectrum in silicon

The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60–1000eV. Good agreement is obtained between the experimental values of the surface parameter P _S and theoretical calculations. The relative contribution of surface excitations is also determined by decomposing the integral reflection electron energy loss spectra into Gaussian curves.     

On knock-on electrons of cosmic-ray muons in condensed matter (at 12° N)

The dependence of knock-on electron probability on the momenta of muons producing the knock-on electrons in condensed matter has been investigated by using a counter controlled cloud chamber. A search has also been made on the nature of the energy spectrum of the knock-on electrons from muons in the momentum region (0.80±0.05) to (1.70±0.05) Bev/c. It appears from the results of the measurements that there is a very weak dependence of knock-on electron probability on the primary muon momentum in the investigated muon spectral region (i.e. (0.80±0.05) to (1.70±0.05) Bev/c). The angular distributions and hence the energy spectra of the emergent electrons are found to be independent of muon momentum.     

Electron spectroscopy of iron disilicide

We have reported on the results of a complex investigation of iron disilicide FeSi₂ using characteristic electron energy loss spectroscopy, inelastic electron scattering cross section spectroscopy, and X-ray photoelectron spectroscopy. It has been shown that the main peak in the spectra of inelastic electron scattering for FeSi₂ is a superposition of two unresolved peaks, viz., surface and bulk plasmons. An analysis of the fine structure of the spectra of inelastic electron scattering cross section by their decomposition into Lorentzlike Tougaard peaks has made it possible to quantitatively estimate the contributions of individual energy loss processes to the resulting spectrum and determine their origin and energy.     

Energy loss spectra,auger spectra and high energy electron diffraction of A-15 superconductors

We have measured the electron energy loss spectra of V₃Si, Nb₃Al, Nb₃Sn, Nb₃Ge (annealed) and Nb₃Ge (sputtered) from 3 to 70 eV. Numerous new structures were discovered in this study which could be related to interband transitions, plasma excitations, and core transitions. We have also measured the high energy electron diffraction patterns and Auger spectra which characterized the lattice structures and compositions of these surfaces.     

Long range enhancement of boron diffusivity by phosphorus diffusion

The effect of electron and ion beam irradiation on the Si_{L vv} Auger spectra of SiO₂, Si₃N₄ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of “free” silicon during irradiation. While in Si-oxynitride (O/N = 0.37) the beam effects were almost negligible, some damage was found in Si₃N₄, but SiO₂ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy (ELS) of ion bombarded SiO₂ and Si₃N₄ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.     

Anregung von Kristallgitterschwingungen durch Elektronenstrahlen

The interaction of electrons with lattice vibrations in thin films of LiF, NaF, MgO, and Al₂O₃ has been studied by means of high resolution electron energy spectroscopy. Just above the excitation energy of the transversal optical modes small bands in the energy loss spectrum are observed. According to the dielectric theory of an unbounded medium only longitudinal optical modes should be excited. The observed energy loss spectrum may be explained by the excitation of surface lattice vibrations. A theoretical energy loss spectrum of LiF has been computed taking into account the surface effects. It is in excellent agreement with the experimental spectrum. Apart from electrons with energy loss also electrons with energy gain were observed. The intensity distribution of the energy gain spectrum is equivalent to the energy loss spectrum. Energy loss and gain spectra of fast electrons by excitation of lattice vibration are corresponding to the Stokes- and Antistokes lines of spectroscopy of light optics.     

Variation of relative intensities between surface and bulk plasmon losses due to crystal orientations for aluminium in low energy electron reflection loss spectroscopy

The contrast change of secondary electron images due to the crystal orientations is observed by the ultra high vacuum scanning electron microscope (UHV-SEM) for crystal grains of clean surface of polycrystalline Al in the primary energy E_p of 200 eV to 5 keV. The low energy electron loss spectra are measured by the cylindrical mirror analyzer. The relative intensity ratio between surface and bulk plasmon loss spectra was dependent on the crystal orientations. The SEM images taken by the surface and bulk plasmon signals at E_p = 230 eV show the inverse contrast depending on the grains. The inversion of the relative intensities between the surface and bulk plasmon losses is explained qualitatively by taking into account of variation of the penetration depth of the incident beam caused by the electron channeling.     

Energy loss measurements and electronic properties of thianthren

Summary The dielectric and electronic properties of thianthren (C₆H₄(S)₂H₄C₆) are determined by means of optical reflectivity, absorption measurements and reflection electron energy loss spectroscopy. The experimental results are interpreted on the basis of a Complete Neglect of Differential Overlap (CNDO) calculation used in three different parametrization schemes. Emphasis is laid on the discussion of the problems which generally affect the analysis of electron energy loss spectra, and a procedure to obtain the complex dielectric function from electron energy loss measurements performed in the reflection mode is suggested. Work partially supported by the MURST through the GNSM.     

Damage behavior and atomic migration in MgAl2O4 under an 80 keV scanning focused probe in a STEM

With the dramatic improvement in the spatial resolution of scanning transmission electron microscopes over the past few decades, the tolerance of a specimen to the high-energy electron beam becomes the limiting factor for the quality of images and spectra obtained. Therefore, a deep understanding of the beam irradiation processes is crucial to extend the applications of electron microscopy. In this paper, we report the structural evolution of a selected oxide, MgAl₂O₄, under an 80 keV focused electron probe so that the beam irradiation process is not dominated by the knock-on mechanism. The formation of peroxyl bonds and the assisted atomic migration were studied using imaging and electron energy-loss spectroscopic techniques.     

Electron beam-induced structural transformations of MoO3 and MoO3?x crystalline nanostructures

Electron beam-induced damage and structural changes in MoO₃ and MoO_3−x single crystalline nanostructures were revealed by in situ transmission electron microscopy (TEM) examination (at 200 kV) after few minutes of concentrating the electron beam onto small areas (diameters between 25 and 200 nm) of the samples. The damage was evaluated recording TEM images, while the structural changes were revealed acquiring selected area electron diffraction patterns and high resolution transmission electron microscopy (HRTEM) images after different irradiation times. The as-received nanostructures of orthorhombic MoO₃ were transformed to a Magnéli’s phase of the oxide (γ-Mo₄O₁₁) after ~10 min of electron beam irradiation. The oxygen loss from the oxide promoted structural changes. HRTEM observations showed that, in the first stage of the reduction, oxygen vacancies generated by the electron beam are accommodated by forming crystallographic shear planes. At a later stage of the reduction process, a polycrystalline structure was developed with highly oxygen-deficient grains. The structural changes can be attributed to the local heating of the irradiated zone combined with radiolysis.     

Extended ELS fine structures above the M2,3 edges of Cu and Ni

Very detailed electron energy loss spectra of M_2,3 core levels of Cu and Ni in the reflection mode are presented. A careful analysis of the oscillations up to about 300 eV above the edges shows strict analogies to EXAFS and demonstrates that structural information can be obtained with this technique. A comparison with X-ray results above the Cu and Ni K-edges shows that very high accuracy in the radial distribution function can be obtained also with ELS spectra taken above shallow core levels.     

Characteristics electron energy loss studies of molecular halogens adsorbed on Fe(100)

The electron energy loss spectra for several molecular Br₂ monolayers adsorbed on a chemisorbed bromine overlayer on Fe(1 0 0) show a sharp loss at about 3.0 to 3.8 eV. For one or more molecular layers of I₂ adsorbed on a chemisorbed iodine overlayer on Fe (1 0 0), a sharp electron loss feature is observed at 4.4 ± 0.2 eV. It is suggested that the electron energy losses for condensed Br₂ at 3.0 eV and for condensed I₂ at 4.4 eV are a result of a 1π_g to 2σ_u electron excitation.     

Electron-induced KLL Auger electron spectroscopy of Fe,Cu and Ge

KLL Auger spectra excited by electrons with energies in the 30–35 keV range of Fe, Cu and Ge films were measured, using thin free-standing films. It was possible to obtain spectra with an energy resolution of about 1 eV. The observed spectra can not be described satisfactorily by just the multiplet splitting of the final state as calculated for an isolated atom. Additional features, due in part to intrinsic (shake satellites) and in part to extrinsic (energy loss of the escaping electron) processes formed a large fraction on the observed intensities. In particular a number of distinct satellite structures that are not predicted by the atomic Auger process are observed. For Fe and Cu the satellite peaks can be explained in terms of shake-up processes from the 3d_5/2–4d_5/2 states. Similar satellite structures observed in Ge are partly attributed to plasmon creation and partly to shake-up processes. It is demonstrated that both the thickness dependence of the observed intensity distributions and transmission electron energy loss measurements contain invaluable information for the interpretation of these spectra.     

The sub-bandgap energy loss satellites in the RIXS spectra of beryllium compounds

Resonant X-ray inelastic scattering spectra have been measured in BeO, phenakite (Be₂SiO₄) and chrysoberyl (BeAl₂O₄) with the excitation energy near the beryllium K edge.The RIXS spectra excited in the vicinity of the Be 1s core resonance show two principal features: the scattering on a valence excitation (which at higher excitation energies verges into the characteristic K_α emission), and a remarkably strong energy loss sideband to the elastic scattering peak. The energy loss shoulder appears to result from lattice relaxation in the absorption site. The comparison of the RIXS spectra of phenakite, chrysoberyl and BeO shows that the strength of the low energy sideband differs greatly; it is strongest in BeO and weakest in phenakite. The Si 2p RIXS spectra of phenakite also display a similar strong sub-bandgap energy loss tail.To gain further insight to this process, transitions in a system with a single vibrational mode have been modelled. The phonon relaxation has been simulated empirically by “smearing” the photoabsortion-populated vibrational levels with lower levels. This simple model is able to qualitatively explain this wide energy loss shoulder.     

Energieverlustmessungen mit 60 keV Elektronen an amorphem und polykristallinem Selen und Tellur und Bestimmung optischer Konstanten

The energy loss functions Im—(1/?) of amorphous and polycrystalline Selenium and Tellurium are determined from energy loss spectra of 60 keV electrons in the energy range up to 30 eV. The optical constants ?₁ and ?₂ are calculated from the energy loss function by Kramers Kronig analysis. The energy difference in the position of the volume plasma loss of amorphous and polycrystalline foils is compared with the calculated change in free electron plasma energy resulting from density change. Characteristic structure dependence of the optical constants are found to be similar for Selenium and Tellurium. They are discussed in terms of the results of band structure calculations.     

Evidence for a possible role of 3‐hydroxyanthranilic acid as an antioxidant

The reactions of 3‐hydroxyanthranilic acid (3‐OHAA) with N₃^?, NO₂^?, NO^?, CCl₃O₂^? , and OH^? radicals were examined using a pulse radiolysis technique mainly at pH 7. The bimolecular electron transfer from secondary one‐electron oxidants results in the formation of anilino radical (λ_max ? 380 nm). The rate constant for the reaction of N₃^? radical with 3‐OHAA at pH 7 was found to be 6.3 × 10⁹ dm³ mol^?1 s^?1. It was observed that the 3‐OHAA reacts with oxygen centered radicals. The repair rate constant for the electron transfer reaction from 3‐OHAA to guanosine radical and chlorpromazine cation radical was also examined using a pulse radiolysis technique. Kinetic studies indicate that 3‐OHAA may act as an antioxidant to repair free‐radical damage to above mentioned biologically important compounds. The rate constants of electron transfer from the 3‐OHAA to the guanosine and chlorpromazine radicals were determined. The one‐electron reduction potential for 3‐OHAA radical was found to be 0.53 ± 0.06 V versus NHE. Copyright © 2008 John Wiley & Sons, Ltd.     

1MeV Si+衬底加温注入Al0.3Ga0.7As/GaAs超晶格和GaAs的晶格损伤研究

用卢瑟福背散射／沟道技术研究了１ＭｅＶＳｉ⁺在衬底加温和室温下以不同剂量注入Ａｌ_0.3Ｇ_0.7Ａｓ／ＧａＡｓ超晶格和ＧａＡｓ后的晶格损伤。在衬底加温下，观察到Ａｌ_0.3Ｇａ_0.7Ａｓ／ＧａＡｓ超晶格和ＧａＡｓ都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围，以及两种速率失去平衡的临界剂量。超晶格比ＧａＡｓ更难以损伤，并且它的两种速率失去平衡的临界剂量也大于ＧａＡｓ中的相应临界剂量，用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。用ＣＮＤＯ／２量子化学方法计算了ＧａＡｓ和Ａｌ_xＧａ_1-xＡｓ中化学键的相对强度，并根据计算结果解释了注入过程中Ａｌ_0.3Ｇａ_0.7Ａｓ／ＧａＡｓ超晶格和ＧａＡｓ中晶格损伤程度的差别。 关键词：