Investigation of V-shaped extended defects in a 4H–SiC epitaxial film

Abstract

We investigated two types of V-shaped extended defects on the basal plane in epitaxial 4H-SiC by synchrotron X-ray topography, photoluminescence imaging/spectroscopy and transmission electron microscopy (TEM). One is the (2, 5) stacking fault (in Zhdanov notation) bounded by two partial dislocations with the Burgers vector b ± 1/4[0?0?0?1]; the other is the (2, 3, 3, 5) stacking fault bounded by partial dislocations with b = ±1/4[0?0?0?1]. The core of the partial dislocations associated with the (2, 3, 3, 5) fault has an out-of-plane component (Frank component) and three in-plane components (Shockley components); the three Shockley components are cancelled out in total. The electronic structures of the (2, 5) and (2, 3, 3, 5) stacking faults were further examined by photoluminescence spectroscopy and first-principles calculations. It is suggested that the (2, 5) and (2, 3, 3, 5) stacking faults both have an interband state at a similar energy level, although they differ structurally.     

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett topography. The contrast of partial dislocations at the edges of Shockley-type stacking faults is discussed in terms of whether they have C- or Si-core edge components, or screw components. The dissociated state of basal-plane dislocation is discussed on a basis of the stacking sequence for basal-planes in the 4H-SiC crystal structure. It is expected that the results obtained in this study will be useful for characterizing Shockley-type stacking faults in Berg–Barrett topography.     

High-resolution identification of ½⟨110⟩ stacking faults in epitaxial Ba0.3Sr0.7TiO3 thin films

The near-interface region of an epitaxial Ba_0.3Sr_0.7TiO₃ thin film grown on LaAlO₃ (001) was found to consist of a high density of ½?110? stacking faults bounded by partial dislocations. The stacking faults can extend over large distances (greater than 50 nm). Various possible atomic configurations of the faults were considered. The atomic structures of the faults were identified using high-resolution electron microscopy and simulation as well as energy-filtered imaging. The ½[101] and faults (where [001] is normal to the film plane) were found to lie predominately on the {100} and {110} planes. The ½lsqb;101] faults on (010), (110) or (1&1tilde;0) have never been observed before in perovskites. The stacking faults on [100] have a structure consisting of a double layer of edge-sharing TiO₆ octahedra. The excess of Ti was detected by energy-filtered imaging. The formation of the extended stacking faults is probably related to a small amount of excess Ti during the film deposition, which may originate from the non-stoichiometry of the ceramic targets BaTiO₃ and SrTiO₃. It is also enhanced by the misfit-induced compressive strain in the early stages of the film growth.     

硅蹼中位错和层错的X射线貌相研究

利用X射线投影貌相术观察和分析了硅蹼中的位错和层错。在生长态硅蹼中,除观察到柏氏矢量为1/2<110>的刃型、螺型与60°全位错以及柏氏矢量为1/6<112>的Shockley刃型半位错外,还观察到平行于硅蹼表面的大面积层错和蹼中的60°,30°Shockley半位错。位错在热处理过程中运动并发生位错反应形成近六角形的位错网络。热处理改变生长态硅蹼中层错的组态和衬度,并由于杂质聚集破坏了Shockley半位错的消象法则。还观察到层错象中的位错。对所观察的结果都分别作了分析和简要的讨论。 关键词：     

Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC

Morphology of single Shockley-type stacking faults (SFs) generated by recombination enhanced dislocation glide (REDG) in 4H–SiC are discussed and analysed. A complete set of the 12 different dissociated states of basal-plane dislocation loops is obtained using the crystallographic space group operations. From this set, six different double rhombic-shaped SFs are derived. These tables indicate the rules that connect shapes of SFs with the locations of partial dislocations having different core structures, the positions of slip planes in a unit cell, and the Burgers vectors of partial dislocations. We applied these tables for the analysis of SFs generated by the REDG effect reported in the past articles. Shapes, growing process of SFs and perfect dislocations for origins of SFs were well analysed systematically.     

SiC晶体缺陷的阴极荧光无损表征研究

由于在研究SiC晶体缺陷对器件性能的影响的过程中,表征材料缺陷的常用的方法是破坏性的,因此寻找一种无损的测试方法对缺陷进行有效的表征显得尤为重要。基于阴极荧光(CL)的工作原理对4H-SiC同质外延材料的晶体缺陷进行了无损测试研究。结果发现利用阴极荧光可以观测到晶体内部的堆垛层错、刃位错和螺位错以及基面位错,其阴极荧光图中的形貌分别为直角三角形、点状和短棒状。因此该方法成为SiC晶体缺陷的无损表征时的一种有效的测试方法。如果利用该方法对材料的衬底和外延层缺陷分别进行观测就能建立起衬底和外延层缺陷之间的某种联系,另外对器件工作前后的缺陷进行表征,建立器件工作前后缺陷之间的联系,就可以进一步地研究材料缺陷对器件性能影响的问题。     

Interaction of twin boundaries with stacking faults in 2H martensite: A high-resolution electron microscopy study

Twinned 2H martensite is observed in copper-based shape memory alloys together with basal and non-basal plane stacking faults. Knowledge of the twin-boundary structure and its interaction with the faults is important to understand the deformation mechanism by twin coalescence. High-resolution electron microscopy coupled with image simulations have been used for these studies. The interface of the type I twinning in 2H martensite shows an atomic configuration with mirror antisymmetry. An atomic plane is shared by the twinned variants in such a way that the distance between the planes, parallel to the interface, is unchanged at the boundary and the mean atomic volume is conserved. The interaction of the boundary with a basal plane fault generates a shift in the interface. A mirror antisymmetrical boundary is maintained by introducing an imperfect interface dislocation.     

Ti,N共掺杂4H-SiC复合增强缓冲层生长及其对PiN二极管正向性能稳定性的改善

"双极型退化"现象严重阻碍了4H-SiC双极型器件如PiN二极管等的产品化,其微观机理是电子-空穴复合条件下层错由基面位错处的扩展.为遏制"双极型退化"现象,不仅要消除漂移层中的基面位错,还需要通过生长复合增强缓冲层的方法阻止少子空穴到达含高密度基面位错片段的外延层/衬底界面.本文采用钛、氮共掺杂的方式进行缓冲层的生长...     

A systematic investigation of stacking faults in magnesium via first-principles calculation

The stacking faults of crystal magnesium have been studied systematically by means of first-principles calculation within the generalized gradient approximation (GGA). The generalized stacking fault (GSF) energy surfaces for four kinds of basal stacking faults as well as other non-basal stacking faults in the prismatic and pyramidal planes have been gained using a supercell approach with the supercell tilling technique. The most likely slip directions for the formation of these stacking faults in the corresponding slip plane were determined, and the generalized stacking fault energy curves along the most likely slip directions were derived, then the stable and unstable stacking energies were obtained and discussed. The present results are helpful for further investigation of dislocations and the correlative mechanical properties.     

TEM study on relationship between stacking faults and non-basal dislocations in Mg

Recent interest in the study of stacking faults and non-basal slip in Mg alloys is partly based on the argument that these phenomena positively influence mechanical behaviour. Inspection of the published literature, however, reveals that there is a lack of fundamental information on the mechanisms that govern the formation of stacking faults, especially I1-type stacking faults (I1 faults). Moreover, controversial and sometimes contradictory mechanisms have been proposed concerning the interactions between stacking faults and dislocations. Therefore, we describe a fundamental transmission electron microscope investigation on Mg 2.5 at. % Y (Mg–2.5Y) processed via hot isostatic pressing (HIP) and extrusion at 623 K. In the as-HIPed Mg–2.5Y, many 〈c〉 and 〈a〉 dislocations, together with some 〈c + a〉 dislocations were documented, but no stacking faults were observed. In contrast, in the as-extruded Mg–2.5Y, a relatively high density of stacking faults and some non-basal dislocations were documented. Specifically, there were three different cases for the configurations of observed stacking faults. Case (I): pure I2 faults; Case (II): mixture of I1 faults and non-basal dislocations having 〈c〉 component, together with basal 〈a〉 dislocations; Case (III): mixture of predominant I2 faults and rare I1 faults, together with jog-like dislocation configuration. By comparing the differences in extended defect configurations, we propose three distinct stacking fault formation mechanisms for each case in the context of slip activity and point defect generation during extrusion. Furthermore, we discuss the role of stacking faults on deformation mechanisms in the context of dynamic interactions between stacking faults and non-basal slip.     

Equilibrium configurations of partial misfit dislocations in thin-film heterosystems

The energy characteristics of orthogonal rows of partial misfit dislocations with V-shaped stacking faults in thin-film heteroepitaxial systems are analyzed theoretically. It is shown that they should appear only in very thin epitaxial films of nanoscopic thickness and for high values of the mismatch exceeding a definite value. Under these conditions partial misfit dislocations associated with V-shaped stacking faults are typical elements of the defect structure of nanolayer heterosystems. For smaller mismatches and larger films thicknesses total misfit dislocations should form. Fiz. Tverd. Tela (St. Petersburg) 40, 2059–2064 (November 1998)     

Study of the wurtzite zinc-blende mixed-structured GaAs nanocrystals grown on Si (111) substrates

The structure and growth mechanism of GaAs nanocrystals grown on Si (111) substrates by using the molecular beam epitaxy method have been studied using transmission electron microscopy. The isolated nanocrystals had hexangular shapes, with aspect ratio ～1 and high symmetry. The crystal structure of the GaAs nanocrystals contains a mixture of a stable state of zinc-blende and a metastable state of wurtzite. A number of thin wurtzite layers parallel to the Si (111) plane are introduced into the zinc-blende GaAs nanocrystals as stacking faults. Formation of partial dislocations near the GaAs/Si interface and the small difference in the Gibbs free energy between the zinc-blende and wurtzite structures could cause formation of wurtzite as stacking faults in the zinc-blende structure     

New type of excitonic radiation in the solid solutions CdS1−x Sex

Manifestations of bulk crystalline regions with stacking faults are detected in the reflection and photoluminescence spectra of CdS_1-x Sex crystals with a variety of compositions. The magnitude of the crystal-field anisotropy and the spin-orbit splitting in these crystals are estimated. It is shown that reabsorption affects the form of the photoluminescence in crystals with stacking faults. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 3, 221–225 (10 August 1999)     

Revisiting the defect structure of MAX phases: the case of Ti4AlN3

Microstructural study of as-grown Ti₄AlN₃ MAX phase has been performed by transmission electron microscopy. Dislocation walls, dislocation nucleation sites and stacking faults are described. In particular, diffraction contrast analysis combined with high-resolution images give a new insight into the nature of the stacking faults: contrarily to what is usually postulated, it is shown that the stacking faults possess a shear component in the basal plane. The stacking faults are created by the insertion of MX layers in the lattice via diffusion mechanisms. Their possible role on the deformation mechanism of MAX phases is discussed.     

Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals

The transformation of the low-temperature emission spectrum of cadmium selenide crystals during plastic deformation by a point load and by uniaxial compression is investigated. A one-to-one correspondence is established between the occurrence of photoluminescence bands in the vicinity of 1.765 eV and the motion of dislocations in the prismatic slip system, on the one hand, and the emergence of a 1.792-eV band as a result of dislocation slip in the basal plane, on the other. Fiz. Tverd. Tela (St. Petersburg) 40, 1845–1848 (October 1998)     

Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon （CZ-Si） by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature （RT）, the 1107cm^-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm^-1, 1096cm^-1, and 1182cm^-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.     

β—SiC外延层中晶体缺陷的观察

用腐蚀法研究了β-SiC外延层中的晶体缺陷。腐蚀剂为熔融氢氧化钾。三角形尖底蚀坑对应于位错。在β-SiC中的全位错为立方晶系的73°位错和60°位错。不同堆垛方式的β-siC生长层相遇时将形成{111}交界层错,其腐蚀图象为平行于<110>方向的直线。60°位错可分解为两个1/6<112>SchockLey不全位错,并夹着一片{111}层错构成扩展位错。三个1/6<110>压杆位错与三片{111}层错可构成层错锥体。正、反堆垛的β-SiC可形成尖晶石律双晶,双晶面为(111)。腐蚀法和X射线劳厄法证实了这种双晶的存在。 关键词：     

Changes in the fine structure of grain boundaries, induced by the absorption of helium, and helium embrittlement

The changes in the structure of grain boundaries in tungsten due to the absorption of helium atoms are investigated experimentally and theoretically. Intergranular dilatation localized in a plane layer of subatomic thickness is observed. It is established that dilatation is accompanied by splitting of the cores of grain-boundary dislocations and a decrease in the grain-boundary stacking fault energy. The relationship of intergranular damage to the changes induced in the parameters of grain-boundary dislocations by the absorption of helium is discussed. Zh. Tekh. Fiz. 68, 64–69 (July 1998)     

Dislocation formation and twinning from the crack tip in Ni3Al: molecular dynamics simulations

The mechanism of low-temperature deformation in a fracture process of L12 Ni3Al is studied by molecular dynamic simulations.Owing to the unstable stacking energy,the [01ˉ1] superdislocation is dissociated into partial dislocations separated by a stacking fault.The simulation results show that when the crack speed is larger than a critical speed,the Shockley partial dislocations will break forth from both the crack tip and the vicinity of the crack tip;subsequently the super intrinsic stacking faults are formed in adjacent {111} planes,meanwhile the super extrinsic stacking faults and twinning also occur.Our simulation results suggest that at low temperatures the ductile fracture in L12 Ni3Al is accompanied by twinning,which is produced by super-intrinsic stacking faults formed in adjacent {111} planes.     

Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures

We employ near‐bandgap terahertz emission spectroscopy to study lateral heterostructures resulting from basal plane stacking faults in m ‐plane GaN. The predominant stacking faults have I₁ character and behave as an array of spontaneously forming layers comprised of a single cubic stacking sequence within the wurtzite matrix that terminate the spontaneous polarization along the in‐plane c‐axis, leading to strong lateral electric fields. Spectral tuning of femtosecond excitation pulses enables observation of the transition from carrier transport in the continuum to formation of instantaneous dipoles and nonlinear susceptibility associated with both the quantum‐well‐like regions of the cubic layers and polarization‐induced triangular‐like potentials. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)