Structural and magnetic properties of pulsed laser deposited SrRuO3/CoFe2O4/La2/3Sr1/3MnO3 magnetic oxide heterostructures on SrTiO3(001) and MgO(001)

We report on the growth of all-oxide SrRuO₃/CoFe₂O₄/La_2/3Sr_1/3MnO₃ and La_2/3Sr_1/3MnO₃/CoFe₂O₄/SrRuO₃ heterostuctures on SrTiO₃(001) and MgO(001) substrates by pulsed laser deposition. Structural analyses by X-ray diffraction and transmission electron microscopy clearly indicate the preservation of epitaxial relations when the La_2/3Sr_1/3MnO₃ layer is grown first, whereas trilayers with SrRuO₃ at the bottom are more disordered. Both the substrate material and the deposition sequence strongly influence the formation of various structural defects such as interfacial dislocations and sub-grain structures, and this is clearly reflected by a reduction of the saturation magnetization in the top electrode. When the substrate material and the deposition sequence are correctly chosen, however, the magnetic moments of the La_2/3Sr_1/3MnO₃ and SrRuO₃ layers reverse independently, and the La_2/3Sr_1/3MnO₃ layer retains bulk-like magnetic properties.     

Dynamic evanescent phonon coupling across the La(1-x)Sr(x)MnO3/SrTiO3 interface

The transport and magnetic properties of correlated La0.53Sr0.47MnO3 ultrathin films, grown epitaxially on SrTiO3, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and first principles theory we show that the cusp is a result of evanescent cross-interface coupling between the charge carriers in the film and a soft phonon mode in the SrTiO3, mediated through linked oxygen octahedral motions. The amplitude of the mode diverges at the transition temperature, and phonons are launched into the first few atomic layers of the film, affecting its electronic state.     

Nanoscale multiphase separation at La(2/3)Ca(1/3)MnO3/SrTiO3 interfaces

55Mn nuclear magnetic resonance experiments are reported on a series of fully strained epitaxial La(2/3)Ca(1/3)MnO3 thin films on SrTiO3. We have found evidence of multiple phase segregation into ferromagnetic metallic and nonmetallic regions as well as regions that are nonferromagnetic and insulating. These insulating regions are mainly located close to interfaces and may have a significant impact on the performance of spin-tunnel devices. As a result of phase segregation, the ferromagnetic coupling within the metallic regions is depressed. This accounts for the reduction of the Curie temperature and conductivity in nanometric thin films.     

Growth of SrTiO3 on Si(001) by hybrid molecular beam epitaxy

We report the heteroepitaxial growth of SrTiO₃ thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal‐organic precursor titanium tetraisopropoxide (TTIP) were co‐supplied in the absence of additional oxygen. The carbonization of pristine Si surfaces during native oxide removal was avoided by freshly evaporating Sr into the hMBE reactor prior to loading samples. Nucleation, growth and crystallization behavior as well a structural properties and film surfaces were characterized for a series of 46‐nm‐thick SrTiO₃ films grown with varying Sr to TTIP fluxes to study the effect of non‐stoichiometric growth conditions on film lattice parameter and surface morphology. High quality SrTiO₃ thin films with epitaxial relationship (001)SrTiO₃ || (001)Si and [110]SrTiO₃ || [100]Si were demonstrated with an amorphous layer of around 4 nm thickness formed at the SrTiO₃/Si interface. The successful growth of high quality SrTiO₃ thin films with atomically smooth surfaces using a thin film technique with scalable growth rates provides a promising route towards heterogeneous integration of functional oxides on Si. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Self-assembled antidots in La2/3Sr1/3MnO3 thin films

In this work, we report on the controlled fabrication of a self-assembled network of antidots in highly epitaxial La_2/3Sr_1/3MnO₃ thin films grown on top of SrTiO₃ (1 0 0) oriented substrates. To promote self-assembly process, it is fundamental to select a unique surface atomic termination of the STO substrates and the appropriate growth conditions. The evolution of the structural and magnetic properties as a function of deposition parameters is analyzed to clarify the growth mechanism leading to the formation of this self-assembled network of antidots. This morphology is of high interest envisaging a new route for the design and fabrication of oxide-based magnetoelectronic devices.     

Spin-wave dispersion in orbitally ordered La1/2Sr3/2MnO4

The magnon dispersion in the charge, orbital, and spin ordered phase in La1/2Sr3/2MnO4 has been studied by means of inelastic neutron scattering. We find excellent agreement with a magnetic interaction model based on the CE-type superstructure. The magnetic excitations are dominated by ferromagnetic exchange parameters revealing a nearly one-dimensional character at high energies. The strong ferromagnetic interaction in the charge or orbital ordered phase appears to be essential for the capability of manganites to switch between metallic and insulating phases.     

Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究

本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO₃薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi₂和 C54-TiSi₂.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO₃薄膜与Si衬底之间的相互作用. 关键词： 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) 3')" href="#">SrTiO₃ 2')" href="#">C54-TiSi₂     

制备压力对La2/3Sr1/3MnO3的磁电阻效应的影响

 研究了制备压力对纳米块状样品La_2/3Sr_1/3MnO₃的结构、磁学和电学性质的影响。结果表明：样品的晶粒尺寸随制备压力的增加而变小，且不同样品的磁电阻效应不同。低场磁电阻效应在整个实验温区都随制备压力的升高而变弱，这主要是由制备压力使样品晶粒界面连接更紧密所导致；T<200 K时，高场磁电阻效应随制备压力的升高而变强，T>200 K时，高场磁电阻效应随制备压力的升高反而变弱，这主要是由制备压力改变样品的晶粒尺寸所引起。     

Laser-induced voltage (LIV) enhancement of La2/3Sr1/3MnO3 films with Ag addition

La_2/3Sr_1/3MnO₃:Ag _x (LSMO:Ag _x , x=0, 0.04, 0.08, 0.10, 0.20, 0.30) films were grown on vicinal cut LaAlO₃ (LAO) substrates by pulsed laser deposition technique (PLD). It is found that laser-induced voltage (LIV) of LSMO:Ag _x films is improved and enhanced by Ag addition. With x increasing, figure of merit (F _m ) and anisotropic Seebeck coefficient (ΔS) of LSMO:Ag _x (x=0.08) films reach the maximum values of 28.25 mV/ns and 0.38 μV/K, respectively. The results suggest that the LIV enhancement of LSMO:Ag _x films is due to the anisotropy of the Seebeck tensor, which is produced by long range cooperative Jahn–Teller distortions with Ag addition.     

用激光分子束外延在玻璃衬底上生长La0.67Sr0.33MnO3薄膜

采用激光分子束外延技术,在玻璃衬底上制备了La0.67Sr0.33MnO3 (LSMO) 薄膜,X射线衍射测量结果表明在玻璃衬底上生长的LSMO薄膜沿c轴择优取向生长.在外磁场3 T和88, 220, 300 K条件下,LSMO薄膜的磁电阻变化率分别达到-37.8%, -26.8%和-6.07%.实验结果表明,在廉价的玻璃衬底上制备大面积和具有应用价值的锰氧化物薄膜是可行的.     

Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO3(001)

Exchange coupling across the interface between a ferromagnetic (FM) layer and an antiferromagnetic (AFM) or another FM layer may induce a unidirectional magnetic anisotropy and/or a uniaxial magnetic anisotropy, which has been extensively studied due to the important application in magnetic materials and devices. In this work, we observed a fourfold magnetic anisotropy in amorphous CoFeB layer when exchange coupling to an adjacent FeRh layer which is epitaxially grown on an SrTiO₃(001) substrate. As the temperature rises from 300 K to 400 K, FeRh film undergoes a phase transition from AFM to FM phase, the induced fourfold magnetic anisotropy in the CoFeB layer switches the orientation from the FeRh$\langle 110\rangle $ to FeRh$\langle 100\rangle $ directions and the strength is obviously reduced. In addition, the effective magnetic damping as well as the two-magnon scattering of the CoFeB/FeRh bilayer also remarkably increase with the occurrence of magnetic phase transition of FeRh. No exchange bias is observed in the bilayer even when FeRh is in the nominal AFM state, which is probably because the residual FM FeRh moments located at the interface can well separate the exchange coupling between the below pinned FeRh moments and the CoFeB moments.     

Photoluminescence probed minority processes in La2/3Sr1/3MnO3 thin films

La_2/3Sr_1/3MnO₃ thin films are studied with temperature variable photoluminescence (PL) spectroscopy. Two emission peaks are assigned to the minority carriers related transition processes. The temperature independent 2.526 eV peak is attributed to the charge transfer type inter-band transition, while the redshifted doublet peak around 1.686 eV to the spin flip process. Band structures are obtained within the density functional theory, which show the consistent band gaps with the PL data. The temperature dependence of the intensity of PL emission suggests that these minority carrier processes are relevant to polaron formation.     

Ag复合对La2/3(Ca0.45Sr0.55)1/3MnO3/xAg体系电输运和室温磁电阻效应影响

文中采用甘氨酸-硝酸盐法分别制备了La2/3(Ca0.45Sr0.55)1/3MnO3/xAg纳米复合材料(x=0;0.1;0.2;0.3).通过X射线衍射、扫描电子显微镜和磁电阻效应测试,对合成产物的结构及性能进行表征.结果表明,随Ag复合量增加,样品均为正交钙钛矿结构,低场室温磁电阻效应增强,电阻率减小.     

Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition

High quality La_2/3Ca_1/3MnO₄(LCMO) thin films have been deposited on silicon-on-insulator (SOI) substrates only buffered by yt tria-stabilized zirconia (YSZ) by using the pulsed laser deposition (PLD) technique. The results obtained from X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) and magnetization investigations indicate that the LCMO films are highly oriented both in-plane and out-of-plane. The Curie temperature T _c is close to 260 K and the insulator–metal (I–M) transition appears around 220 K. The conducting mechanism at low temperatures is dominated by the electron–magnon scattering. A tensile stress from the film–substrate lattice mismatch results in magnetic ‘easy axes’ in the film plane and the magnetic anisotropy energy increases with cooling. A maximum magnetoresistance (MR) is observed near 190 K, with the external magnetic field either parallel or vertical to the LCMO film plane. Moreover, the large intrinsic high-field magnetoresistance (HFMR) and the very small extrinsic low-field magnetoresistance (LFMR) again reveal that the LCMO films on SOI substrates are highly oriented thin films of good crystallinity.     

(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格间隔的La0.7Sr0.3MnO3三明治结构制备及表征

采用射频磁控溅射的方法在SrTiO3(001,基片上制备了(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格间隔的La0.7Sr0.3MnO3三明治结构.X射线衍射分析证明(La0.7Sr0.3MnO3)m(BiFeO3)n具有明显的超晶格结构.电流垂直于薄膜表面测得的电阻-温度关系表明.La0.7Sr0.3MnO3)m(BiFeO3)n超晶格薄膜在290 K有金属-绝缘体转变,略低于单层La0.7Sr0.3MnO3薄膜的转变温度.电流在0.01-10 mA范围内,观察到薄膜的峰值电阻随电流增大而减小,峰值变化率远大于单层La0.7Sr0.3MnO3薄膜,且随着超晶格周期厚度的增加而增大.低温下,电流-电压曲线表明其导电机制应主要为空间载子限制,且显示较大的电压偏置,表现出肖特基结的特性.     

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×10¹² cm⁻² and a Hall mobility of 1800 cm²/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance g_m of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).     

铁电层厚度对(BiCoO_3)_n/(La_(2/3)Sr_(1/3)MnO_3)_1超晶格磁电性质的影响

本文利用第一性原理,对由四方相BiCoO_3(BCO)和La_(2/3)Sr_(1/3)MnO_3(LSMO)所构造的超晶格的形成能、电子结构与磁电性质进行了系统研究.研究表明,超晶格中BCO层厚度变化可对超晶格的电子结构,及其极化位移与自旋极化率等磁电性质产生重要影响.特别的,在BiO/Mn_BO_2为界面构型的超晶格中,当BCO侧为一个单胞层时,超晶格表现出半金属性,可获得100%自旋极化率.上述研究结果对于新型自旋电子器件研究具有一定科学意义.     

Magneto-transport properties of La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3 tunnel junction

Hole-doped rare-earth manganite La_0.7Ca_0.3MnO₃ and the electron-doped manganite La_0.7Ce_0.3MnO₃ both show a metal-insulator transition around 250 K associated with a ferromagnetic transition and colossal magnetoresistance. In an earlier publication we have reported the rectifying characteristic of La_0.7Ca_0.3MnO₃/SrTiO₃/La_0.7Ce_0.3MnO₃ tunnel junction at room temperature, showing that it is possible to fabricate a diode out of the polaronic insulator regime of doped manganites. Here we report the magneto-transport properties of such a tunnel junction above and below the metal-insulator transition. We show, from the large positive magnetoresistance of the tunnel junction at low temperature, that La_0.7Ce_0.3MnO₃ could be a minority spin carrier ferromagnet. The implication of this observation is discussed.