Sigma Terms and Strangeness Contents of Baryon Octet in Modified Chiral Perturbation Theory

[1]J.Gasser,H.Leutwyler,and M.E.Sainio,Phys.Lett.B 253 (1991) 252. [2]John Ellis,Eur.Phys.J.A 24S2 (2005) 3,[arXive:hepph/0411369]. [3]T.Inoue,V.E.Lyubovitskij,Th.Gutsche,and Amand Faessler,Phys.Rev.C 69 (2004) 035207,[arXive:hepph/0311275]. [4]M.M.Pavan,I.I.Strakovsky,R.L.Workman,and R.A.Arndt,PiN Newslett.16 (2002) 110,[arXive:hepph/0111066]. [5]V.E.Lyubovitskij,Th.Gutsche,Amand Faessler,and E.G.Drukarev,Phys.Rev.D 63 (2001) 054026,[arXive:hep-ph/0009341]. [6]S.D.Bass,Phys.Lett.B 329 (1994) 358,[arXive:hepph/9404294]. [7]Marc Knecht,PiN Newslett.15 (1999) 108,[arXive:hepph/9912443]. [8]P.Schweitzer,Phys.Rev.D 69 (2004) 034003. [9]B.C.Lehnhart,J.Gegelia,and S.Scherer,J.Phys.G 31(2005) 89,[arXive:hep-ph/0412092]. [10]P.J.Ellis and K.Torikoshi,Phys.Rev.C 61 (1999)015205. [11]Gerald E.Hite,William B.Kaufmann,and Richard J.Jacob,Phys.Rev.C 71 (2005) 065201. [12]S.Weinberg,Physica A 96 (1979) 327. [13]J.Gasser and H.Leutwyler,Nucl.Phys.B 250 (1985)465. [14]J.Gasser,M.E.Sainio,and A.Svarc,Nucl.Phys.B 307(1988) 779. [15]P.Papazoglou,D.Zschiesche,S.Schramm,J.SchaffnerBielich,H.St(o)cker,and W.Greiner,Phys.Rev.C 59(1999) 411. [16]T.Fuchs and J.Gegelia,Phys.Rev.D 68 (2003) 056005.     

Effect of an electric field on the deformation of incompressible rubbers: Bifurcation phenomena

Well above their glass transition temperatures, polymers behave like rubber materials. In the rubbery state, the elastic modulus is low enough to allow large deformations. Rubbery materials also deform under the application of an electric field. Rubbers can be referred as electromechanically active elastomers (EMAE) or lightweight materials that convert electrical into mechanical energy and vice versa [H. Xu, Z.-Y. Cheng, D. Olson, T. Mai, Q.M. Zang, G. Kavarnos, Ferroelectric and electromechanical properties of poly(vinylidene-fluoride-trifluoroethylene-chlrotrifluoroethylene) terpolymer, Appl. Phys. Lett. 78 (2001) 2360–2362]. Possible applications include biomedical prostheses, actuators, energy harvesters and robots [R.E. Pelrine, R.D. Kornbluh, J.P. Joseph, Electrostriction of polymer dielectrics with compliant electrodes as a means of actuation, Sens. Actuators, A 64 (1998) 77–85; G. Kofod, W. Wirges, Energy minimization for self-organized structure formation and actuation, Appl. Phys. Lett., 90 (2007) 81916–81918; J.S. Plante, S. Dubowsky, Large-scale failure modes of dielectric elastomer actuators, Int. J. Solids Struct. 43 (2006) 7727–7751].However, although the engineering applications of EMAE are quite recent, the theoretical foundations of continua under simultaneous electrical and mechanical force fields date back the 1960s. In this paper we present the basis of the nonlinear electroelasticity according to the formulation by Dorfmann and Ogden [A. Dorfmann, R.W. Ogden, Nonlinear Electroelastic Deformations, J. Elasticity 82 (2006) 99–127; A. Dorfmann, R.W. Ogden, Nonlinear electroelasticity, Acta Mechanica 174 (2005) 167–183] and discuss the influence of an electrical field on the bifurcation phenomena appearing in some cases of electromechanical deformation in rubber materials.     

Diffusion processes in seeded and unseeded SBT thin films with varied stoichiometry

SrBi₂Ta₂O₉ (SBT) is a bismuth layered perovskite (BLP) with interesting ferroelectric properties for memories applications. The previous study on the synthesis of seeded and unseeded SBT thin films by the authors [G. González Aguilar, M.E.V. Costa, I.M. Miranda Salvado, J. Eur. Ceram. Soc. 25 (2005) 2331] has shown an increase of the crystallinity of the films and an improvement of the thin film ferroelectric properties when using SBT seeds. However, the detailed role of the seeds as an improver of the thin film properties has not been investigated so far. In the present work we study the role of the seeds, particularly with respect to the reactions between film and (bottom) underlying platinum electrode. The comparison of the results obtained by characterizing the seeded and unseeded thin films via Rutherford backscattering (RBS) and particle induced X-ray emission (PIXE) techniques reveals an effective modification of the substrate-thin film interface by the presence of the seeds. Moreover, the evaluation of the thin film ferroelectric properties by atomic force microscopy (AFM) shows an improvement of the local piezoelectric hysteresis loops by the seeds. These seeding effects as well as those observed in non-stoichiometric SBT thin films with different bismuth contents are used to discuss the barrier-like role of the SBT seeds against reactions between film and the platinum electrode and its contribution to the improvement of the thin film properties.     

Nanoscale oscillatory fracture propagation in metallic glasses

We describe the oscillatory crack propagation for small propagation velocities at the atomistic scale that was recently observed for brittle metallic glasses [G. Wang, Y.T. Wang, Y.H. Liu, M.X. Pan, D.Q. Zhao, W.H. Wang, Appl. Lett. 89 (2006) 121909; G. Wang, D.Q. Zhao, H.Y. Bai, M.X. Pan, A.L. Xia, B.S. Han, X.K. Xi, Y. Wu, W.H. Wang, Phys. Rev. Lett. 98 (2007) 235501]. Based on a simple model of crack propagation [Y. Braiman, T. Egami, Phys. Rev. E, 77 (2008) 065101(R)], we derived and analyzed expressions for the feature size, oscillation period, and maximum strain accumulated in the material.     

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p–n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃     

Quantum entanglement formation by repeated spin blockade measurements in a spin field-effect transistor structure embedded with quantum dots

We propose a method of operating a quantum state machine made of stacked quantum dots buried in adjacent to the channel of a spin field-effect transistor (FET) [S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665; K. Yoh, et al., Proceedings of the 23rd International Conference on Physics of Semiconductors (ICPS) 2004; H. Ohno, K. Yoh et al., Jpn. J. Appl. Phys. 42 (2003) L87; K. Yoh, J. Konda, S. Shiina, N. Nishiguchi, Jpn. J. Appl. Phys. 36 (1997) 4134]. In this method, a spin blockade measurement extracts the quantum state of a nearest quantum dot through Coulomb blockade [K. Yoh, J. Konda, S. Shiina, N. Nishiguchi, Jpn. J. Appl. Phys. 36 (1997) 4134; K. Yoh, H. Kazama, Physica E 7 (2000) 440] of the adjacent channel conductance. Repeated quantum Zeno-like (QZ) measurements [H. Nakazato, et al., Phys. Rev. Lett. 90 (2003) 060401] of the spin blockade is shown to purify the quantum dot states within several repetitions. The growth constraints of the stacked InAs quantum dots are shown to provide an exchange interaction energy in the range of 0.01–1 meV [S. Itoh, et al., Jpn. J. Appl. Phys. 38 (1999) L917; A. Tackeuchi, et al., Jpn. J. Appl. Phys. 42 (2003) 4278]. We have verified that one can reach the fidelity of 90% by repeating the measurement twice, and that of 99.9% by repeating only eleven QZ measurements. Entangled states with two and three vertically stacked dots are achieved with the sampling frequency of the order of 100 MHz.     

Electro-optical response due to mixed conduction electrodes, compared to ferroelectric ones, in asymmetric nematic liquid crystal cells

The usual liquid crystal cells show an electro-optical response symmetric to the applied voltage. On the contrary, when mixed conduction films such as tungsten trioxide or vanadium pentoxide are inserted on one side of the cell, the electro-optical response is asymmetric with respect to the applied voltage. Depending on the structural phase of the inserted film the electro-optical response is in phase (transmission ON during the anodic polarization on metal oxide electrode, transmission OFF during the cathodic one) or in opposition of phase (reverse combination). The first case has been explained by the formation of a double charge layer at the interface metal oxide–liquid crystal, because of migration of protons contained in the oxide films. The other case has been found after high-temperature treatments of metal oxides deposited on glass–ITO substrates, and it appears quite similar to the response collected by using films of ferroelectric materials such as lead zirconium titanate (PZT). This fact suggests a possible interpretation in terms of dielectric response, when the mixed conduction films undergo high-temperature treatments. A comparative study of films of WO₃, V₂O₅, and PZT is carried out in this work as a function of the annealing temperature. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Single-oscillator model and determination of optical constants of spray pyrolyzed amorphous SnO<Subscript>2</Subscript> thin films

It has recently been shown that growth of a multilayer structure with one or more delta-layers at high temperature leads to spreading and asymmetrization of the dopant distribution [see, for example, E.F.J. Schubert, Vac. Sci. Technol. A. 8, 2980 (1990), A.M. Nazmul, S. Sugahara, M. Tanaka, J. Crystal Growth 251, 303 (2003); R.C. Newman, M.J. Ashwin, M.R. Fahy, L. Hart, S.N. Holmes, C. Roberts, X. Zhang, Phys. Rev. B 54, 8769 (1996); E.F. Schubert, J.M. Kuo, R.F. Kopf, H.S. Luftman, L.C. Hopkins, N.J. Sauer, J. Appl. Phys. 67, 1969 (1990); P.M. Zagwijn, J.F. van der Veen, E. Vlieg, A.H. Reader, D.J. Gravesteijn, J. Appl. Phys. 78, 4933 (1995); W.S. Hobson, S.J. Pearton, E.F. Schubert, G. Cabaniss, Appl. Phys. Lett. 55, 1546 (1989); Delta Doping of Semiconductors, edited by E.F. Schubert (Cambridge University Press, Cambridge, 1996); Yu.N. Drozdov, N.B. Baidus', B.N. Zvonkov, M.N. Drozdov, O.I. Khrykin, V.I. Shashkin, Semiconductors 37, 194 (2003); E. Skuras, A.R. Long, B. Vogele, M.C. Holland, C.R. Stanley, E.A. Johnson, M. van der Burgt, H. Yaguchi, J. Singleton, Phys. Rev. B 59, 10712 (1999); G. Li, C. Jagadish, Solid-State Electronics 41, 1207 (1997)]. In this work analytical and numerical analysis of dopant dynamics in a delta-doped area of a multilayer structure has been accomplished using Fick's second law. Some reasons for asymmetrization of a delta-dopant distribution are illustrated. The spreading of a delta-layer has been estimated using example materials of a multilayer structure, a delta-layer and an overlayer.     

Top Quark Flavor Changing Decay t

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Classical oscillator with position-dependent mass in a complex domain

We study complexified Harmonic Oscillator with a position-dependent mass, termed as Complex Exotic Oscillator (CEO). The complexification induces a gauge invariance [A.V. Smilga, J. Phys. A 41 (2008) 244026, arXiv:0706.4064; A. Mostafazadeh, J. Math. Phys. 43 (2002) 205; A. Mostafazadeh, J. Math. Phys. 43 (2002) 2814; A. Mostafazadeh, J. Math. Phys. 43 (2002) 3944]. The role of PT-symmetry is discussed from the perspective of classical trajectories of CEO for real energy. Some trajectories of CEO are similar to those for the particle in a quartic potential in the complex domain [C.M. Bender, S. Boettcher, P.N. Meisinger, J. Math. Phys. 40 (1999) 2201; C.M. Bender, D.D. Holm, D. Hook, J. Phys. A 40 (2007) F793, arXiv:0705.3893].     

Field-induced vortices in weakly anisotropic ferroelectrics

In microscale and nanoscale ferroelectric samples, the formation and growth of domains are the usual stages of the polarization switching mechanism. By assuming weak polarization anisotropy and by solving the Ginzburg–Landau–Khalatnikov equation we have explored an alternative mechanism which consists in ferroelectric switching induced by vortex formation. We have studied the polarization dynamics inside a ferroelectric circular capacitor where switching leads to the formation of a metastable vortex state with a rotational motion of the polarization. Our results are consistent with recent first-principle simulations [I.I. Naumov, H.X. Fu, Phys. Rev. Lett. 98, 077603 (2007)] and with experiments on PbZr_0.2Ti_0.8O₃ [A. Gruverman, D. Wu, H.J. Fan, I. Vrejoiu, M. Alexe, R.J. Harrison, J.F. Scott, J. Phys. Condens. Matter 20 342201(2008)] and demonstrate that vortex-induced polarization switching can be an effective mechanism for circular nanocapacitors.     

基于六粒子纠缠态和Bell态测量的量子信息分离

通过介绍六粒子纠缠态的新应用研究,提出了一个二粒子任意态的信息分离方案.在这个方案中,发送者Alice、控制者Charlie和接受者Bob共享一个六粒子纠缠态,发送者先执行两次Bell基测量|然后控制者执行一次Bell基测量|最后接受者根据发送者和控制者的测量结果,对自己拥有的粒子做适当的幺正变换,从而能够重建要发送的二粒子任意态.这个信息分离方案是决定性的,即成功概率为100%.与使用相同的量子信道进行二粒子任意态的信息分离方案相比,本文提出的方案只需要进行Bell基测量而不需要执行多粒子的联合测量,从而使得这个方案更简单、更容易,并且在目前的实验室技术条件下是能够实现的.     

Total electron yield XANES of zinc-blende MnTe

The electronic structure and chemical bond of zinc-blende (zb) MnTe have been studied by using total-electron-yield (TEY) X-ray absorption near-edge structure (XANES) spectroscopy. Close resemblances of the shape of Mn K-edge XANES in zb-MnTe and in Zn_1−xMn_xTe [A. Titov, X. Biquard, D. Halley, S. Kuroda, E. Bellet-Amalric, H. Mariette, J. Cibert, A.E. Merad, G. Merad, M.B. Kanoun, E. Kulatov, Yu.A. Uspenskii, Phys. Rev. B 72 (2005) 115209] indicated predominant influence of the 1st coordination shell. In particular, identical single-peak pre-edge structure for both cases was mainly ascribed to the Mn 1s-3d/4p weakly allowed dipole transitions. The quantitative analysis of XANES in zb-MnTe concerned the observed chemical shift of Mn K-edge threshold energy and a magnitude of the relevant cation-anion charge transfer (or effective cation charge), q(Mn-Te) [calculated after M. Kitamura, H. Chen, J. Phys. Chem. Solids 52 (1991) 731]. It also provided a comparison with our earlier X-ray absorption studies of Zn_1−xMn_xB alloys (B = S, Se). The estimated charge transfer within the chemical bond of zb-MnTe enabled us to complete the q(Mn-B) versus chalcogen ligand (B = S, Se, Te) dependence and to interpret it in terms of p-d hybridization and a contribution of Mn 3d electrons to the overall charge transfer.     

Study of asymmetric charge writing on Pb(Zr,Ti)O3 thin films by Kelvin probe force microscopy

Polycrystalline Pb(Zr_0.55Ti_0.45)O₃ thin film was deposited on Pt/Ti/SiO₂/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon.     

Fatigue-free Pb(Zr0.52Ti0.48)O3 thin films on indium tin oxide coated substrates by a sol-gel process

Fatigue-free Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films were successfully prepared on indium tin oxide (ITO) coated glass substrates using the sol-gel method combined with a rapid thermal annealing process (RTA). The films post-annealed at a temperature of 700 °C for 2 min by RTA process formed (110)-oriented Pb(Zr_0.52Ti_0.48)O₃ thin films with pure perovskite structure, and had a good morphology as well. The good ferroelectricity of the prepared PZT films was confirmed by P–E hysteresis loop measurements. Fatigue characteristics showed stable behavior. Degradation in polarization was not found while the repeating cycles were up to 10¹¹, and a low leakage current density of 10⁻⁸ A/cm² was also obtained from the highly fatigue-resisted PZT thin films on ITO/glass substrates. Received: 19 October 1998 / Accepted: 29 March 1999 / Published online: 26 May 1999     

Multiferroic properties of nanocrystalline BaTiO3

Some of the Multiferroics [H. Schmid, Ferroelectrics 162 (1994) 317] form a rare class of materials that exhibit magneto–electric coupling arising from the coexistence of ferromagnetism and ferroelectricity, with potential for many technological applications [J.F. Scott, Nat. Mater. 6 (2007) 256; N.A. Spaldin, M. Fiebig, Science 309 (2005) 391]. Over the last decade, an active research on multiferroics has resulted in the identification of a few routes that lead to multiferroicity in bulk materials [C. Ederer, N.A. Spaldin, Nat. Mater. 3 (2004) 849; D.V. Efremov, J. van den Brink, D.I. Khomskii, Nat. Mater. 3 (2004) 853; N. Hur, S. Park, P.A. Sharma, J.S. Ahn, S. Guha, S.W. Cheong, Nature 429 (2004) 392]. While ferroelectricity in a classic ferroelectric such as BaTiO₃ is expected to diminish with the reducing particle size, [C.H. Ahn, K.M. Rabe, J.M. Triscone, Science 303 (2004) 488; J. Junquera, P. Ghosez, Nature 422 (2003) 506] ferromagnetism cannot occur in its bulk form [N.A. Hill, J. Phys. Chem. B 104 (2000) 6694]. Here, we use a combination of experiment and first-principles simulations to demonstrate that multiferroic nature emerges in intermediate size nanocrystalline BaTiO₃, ferromagnetism arising from the oxygen vacancies at the surface and ferroelectricity from the core. A strong coupling between a surface polar phonon and spin is shown to result in a magnetocapacitance effect observed at room temperature, which can open up possibilities of new electro–magneto-mechanical devices at the nano-scale.     

Adsorption of molecular gases on porous materials in the SAFT-VR approximation

A simple molecular thermodynamic approach is applied to the study of the adsorption of gases of chain molecules on solid surfaces. We use a model based on the Statistical Associating Fluid Theory for Variable Range (SAFT-VR) potentials [A. Gil-Villegas, A. Galindo, P.J. Whitehead, S.J. Mills, G. Jackson, A.N. Burgess, J. Chem. Phys. 106 (1997) 4168] that we extend by including quasi-two-dimensional approximation to describe the adsorption properties of these types of real gas [A. Martínez, M. Castro, C. McCabe, A. Gil-Villegas, J. Chem. Phys. 126 (2007) 074707]. The model is applied to ethane, ethylene, propane, and carbon dioxide adsorbed on activated carbon and silica gel, which are porous media of significant industrial interest. We show that the adsorption isotherms obtained by means of the present SAFT-VR modeling are in fair agreement with the experimental results provided in the literature.     

on submicron rings and their application for coherent nanoelectronic devices

Electron-phase modulation in magnetic and electric fields will be presented in In_0.75Ga_0.25As Aharonov–Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200 nm without carrier depletion. We shall present a fabrication scheme based on wet and dry etching that yielded excellent reproducibility, very high contrast of the oscillations and good electrical gating. The operation of these structures is compatible with closed-cycle refrigeration and suggests that this process can yield coherent electronic circuits that do not require cryogenic liquids. The InGaAs/AlInAs heterostructure was grown by MBE on a GaAs substrate [F. Capotondi, G. Biasiol, D. Ercolani, V. Grillo, E. Carlino, F. Romanato, L. Sorba, Thin Solid Films 484 (2005) 400], and in light of the large effective g-factor and the absence of the Schottky barrier is a material system of interest for the investigation of spin-related effects [W. Desrat, F. Giazotto, V. Pellegrini, F. Beltram, F. Capotondi, G. Biasiol, L. Sorba, D.K. Maude, Phys. Rev. B 69 (2004) 245324; W. Desrat, F. Giazotto, V. Pellegrini, M. Governale, F. Beltram, F. Capotondi, G. Biasiol, L. Sorba, Phys. Rev. B 71 (2005) 153314; J. Nitta, T. Akazaki, H. Takayanagi, T. Enoki, Phys. Rev. Lett. 78 (1997) 1335] and the realization of hybrid superconductor/semiconductor devices [Th. Schäpers, A. Kaluza, K. Neurohr, J. Malindretos, G. Crecelius, A. van der Hart, H. Hardtdegen, H. Lüth, Appl. Phys. Lett. 71 (1997) 3575].     

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

Molecular-Beam Epitaxy growth of multiple In_0.4Ga_0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In_0.4Ga_0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In_0.4Ga_0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.